JP6634275B2 - 成膜システム - Google Patents
成膜システム Download PDFInfo
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- JP6634275B2 JP6634275B2 JP2015237518A JP2015237518A JP6634275B2 JP 6634275 B2 JP6634275 B2 JP 6634275B2 JP 2015237518 A JP2015237518 A JP 2015237518A JP 2015237518 A JP2015237518 A JP 2015237518A JP 6634275 B2 JP6634275 B2 JP 6634275B2
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- 230000008021 deposition Effects 0.000 title description 4
- 238000012546 transfer Methods 0.000 claims description 188
- 230000032258 transport Effects 0.000 claims description 100
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- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 description 120
- 230000008569 process Effects 0.000 description 119
- 238000012545 processing Methods 0.000 description 34
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- 239000012636 effector Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 101000642536 Apis mellifera Venom serine protease 34 Proteins 0.000 description 4
- 101100333868 Homo sapiens EVA1A gene Proteins 0.000 description 4
- 102100031798 Protein eva-1 homolog A Human genes 0.000 description 4
- 101100438139 Vulpes vulpes CABYR gene Proteins 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 101000848201 Bos taurus Fibronectin type 3 and ankyrin repeat domains protein 1 Proteins 0.000 description 3
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- 102100022907 Acrosin-binding protein Human genes 0.000 description 2
- 101000756551 Homo sapiens Acrosin-binding protein Proteins 0.000 description 2
- 101100310674 Tenebrio molitor SP23 gene Proteins 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
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- 230000006837 decompression Effects 0.000 description 1
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- 230000006870 function Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (1)
- 被加工物の円形のエッジよりも内側の領域上に円形の開口を提供するマスクを配置し、該領域上に膜を形成することにより成膜済被加工物を生成するように構成された一以上の成膜装置と、
前記一以上の成膜装置に被加工物を搬送するための一以上の搬送モジュールと、
前記一以上の成膜装置の外側に設けられた画像取得機構であり、
円形物体をその中心周りに回転可能に支持する回転ステージ、及び、
前記回転ステージによって回転される前記成膜済被加工物のエッジ及び該成膜済被加工物の前記膜のエッジが通過する領域に視野を有するカメラ、
を含む該画像取得機構と、
前記成膜済被加工物の前記回転ステージによる回転中に前記カメラによって取得された三以上の複数の画像から、周方向の異なる複数の箇所それぞれにおける該成膜済被加工物のエッジと該成膜済被加工物の前記膜のエッジとの間の複数の幅を求める第1手段と、
前記成膜済被加工物に対して前記第1手段によって求められた前記複数の幅から、該成膜済被加工物の中心の位置に対する該成膜済被加工物の前記膜の中心の位置のずれ量である第1の位置ずれ量を求める第2手段と、
前記一以上の成膜装置の各々によって生成された前記成膜済被加工物の前記第1の位置ずれ量を用いて、該一以上の成膜装置のうち該成膜済被加工物の生成に用いられた成膜装置に被加工物を搬送する前記一以上の搬送モジュールのうちの搬送モジュールの搬送位置を補正する第3手段と、
を備え、
前記第1手段は、前記複数の画像の各々に含まれる画素列であり前記成膜済被加工物の中心側から放射方向に沿って延びる線に対応する該画素列から、ピーク値である輝度値の微分値を有する二つの画素を特定し、該二つの画素の間の幅を求めることにより、前記複数の幅を求め、
前記一以上の成膜装置として複数の成膜装置を備え、
前記一以上の搬送モジュールとして複数の搬送モジュールを備え、
前記複数の成膜装置は、前記複数の搬送モジュールのうち二つの搬送モジュールのそれぞれから被加工物が搬送される一つの成膜装置を含み、
前記一つの成膜装置によって生成される前記成膜済被加工物から前記第1の位置ずれ量を求めるために、前記二つの搬送モジュールのうち一方の搬送モジュールのみが被加工物を該一つの成膜装置に搬送し、
前記第3手段は、前記一方の搬送モジュールによって搬送された被加工物を用いて前記一つの成膜装置において生成された前記成膜済被加工物から求められた前記第1の位置ずれ量を用いて、前記一つの成膜装置への前記一方の搬送モジュールによる被加工物の搬送位置を補正し、
前記二つの搬送モジュールのうち他方の搬送モジュールによる前記一つの成膜装置への搬送途中の被加工物の中心が位置すべき基準位置に対する実際の該搬送途中の被加工物の中心の位置のずれ量である第2の位置ずれ量を求める第4手段を更に備え、
前記第3手段は、前記一方の搬送モジュールによって搬送された被加工物を用いて前記一つの成膜装置によって生成された前記成膜済被加工物から求められた前記第1の位置ずれ量と前記第4手段によって求められた前記第2の位置ずれ量を用いて、前記一つの成膜装置への前記他方の搬送モジュールによる被加工物の搬送位置を補正する、
成膜システム。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015237518A JP6634275B2 (ja) | 2015-12-04 | 2015-12-04 | 成膜システム |
US15/367,813 US10273571B2 (en) | 2015-12-04 | 2016-12-02 | Film forming system |
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JP2015237518A JP6634275B2 (ja) | 2015-12-04 | 2015-12-04 | 成膜システム |
Publications (2)
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JP2017103415A JP2017103415A (ja) | 2017-06-08 |
JP6634275B2 true JP6634275B2 (ja) | 2020-01-22 |
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JP2015237518A Active JP6634275B2 (ja) | 2015-12-04 | 2015-12-04 | 成膜システム |
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JP (1) | JP6634275B2 (ja) |
Families Citing this family (7)
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JP6832130B2 (ja) | 2016-11-04 | 2021-02-24 | 東京エレクトロン株式会社 | 成膜装置 |
JP6741564B2 (ja) * | 2016-12-06 | 2020-08-19 | 東京エレクトロン株式会社 | 成膜装置 |
JP7240980B2 (ja) * | 2019-07-29 | 2023-03-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板搬送方法 |
JP7257914B2 (ja) | 2019-08-08 | 2023-04-14 | 東京エレクトロン株式会社 | 基板処理システムおよび基板処理方法 |
JP7522579B2 (ja) | 2020-04-30 | 2024-07-25 | ニデックインスツルメンツ株式会社 | 搬送システム |
KR20220056600A (ko) * | 2020-10-28 | 2022-05-06 | 삼성전자주식회사 | 반도체 소자의 제조 장치 |
JP7534048B2 (ja) * | 2021-01-20 | 2024-08-14 | 東京エレクトロン株式会社 | プラズマ処理システム及びプラズマ処理方法 |
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JP3366497B2 (ja) * | 1995-07-12 | 2003-01-14 | 松下電器産業株式会社 | 部品検出方法 |
JP4449293B2 (ja) * | 2001-12-19 | 2010-04-14 | 株式会社ニコン | 成膜装置、及び光学部材の製造方法 |
JP4878202B2 (ja) * | 2006-04-26 | 2012-02-15 | 東京エレクトロン株式会社 | 膜位置調整方法、記憶媒体及び基板処理システム |
JP5058836B2 (ja) | 2007-05-08 | 2012-10-24 | 東京エレクトロン株式会社 | 処理装置、処理方法、被処理体の認識方法および記憶媒体 |
US7993461B2 (en) * | 2007-05-30 | 2011-08-09 | Intermolecular, Inc. | Method and system for mask handling in high productivity chamber |
US8602706B2 (en) * | 2009-08-17 | 2013-12-10 | Brooks Automation, Inc. | Substrate processing apparatus |
JP5715011B2 (ja) * | 2011-09-06 | 2015-05-07 | 株式会社大日本科研 | 直線検出方法および基板の位置決め方法 |
JP2013251416A (ja) * | 2012-05-31 | 2013-12-12 | Tokyo Electron Ltd | 積層膜の製造方法及び真空処理装置 |
JP2014239093A (ja) * | 2013-06-06 | 2014-12-18 | 信越半導体株式会社 | 枚葉式気相成長装置用サセプタ、枚葉式気相成長装置及びそれを用いた枚葉式気相成長方法 |
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2015
- 2015-12-04 JP JP2015237518A patent/JP6634275B2/ja active Active
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2016
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JP2017103415A (ja) | 2017-06-08 |
US10273571B2 (en) | 2019-04-30 |
US20170159170A1 (en) | 2017-06-08 |
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