JP6741564B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP6741564B2 JP6741564B2 JP2016236797A JP2016236797A JP6741564B2 JP 6741564 B2 JP6741564 B2 JP 6741564B2 JP 2016236797 A JP2016236797 A JP 2016236797A JP 2016236797 A JP2016236797 A JP 2016236797A JP 6741564 B2 JP6741564 B2 JP 6741564B2
- Authority
- JP
- Japan
- Prior art keywords
- slit
- area
- stage
- space
- moving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (4)
- 基板に対する成膜を行うための成膜装置であって、
チャンバを提供するチャンバ本体と、
前記チャンバを第1空間と該第1空間の下方の第2空間に区画するように設けられたスリット板であり、該スリット板を貫通するスリットが形成された、該スリット板と、
前記第1空間内においてターゲットを保持するように設けられたホルダと、
基板を支持し、且つ、前記スリットの直下のエリアを含む移動エリアにおいて前記スリットの長手方向に直交する移動方向に移動可能なステージと、
前記移動方向に沿って前記ステージを移動させる移動機構と、
を備え、
前記ステージは、
前記ターゲットからの粒子が前記スリットを介して前記移動エリア以外の前記第2空間内の他のエリアに飛散することを抑制するために、前記スリットと前記他のエリアとの間の該ステージの周囲の経路に上方及び/又は下方に折れ曲がった部分を与える一以上の凸部と、
その上に基板が搭載される搭載領域を含む搭載部と、
該搭載部を支持する支持部であり、前記搭載部の下方において延在し、且つ、前記移動機構に結合された、該支持部と、
を有し、
前記一以上の凸部は、前記支持部に形成された凸部を含み、
該成膜装置は、前記スリット板に結合されており、且つ、前記移動エリアを画成し、該移動エリアと前記第2空間の前記他のエリアとの間に介在する壁部材を更に備え、
前記壁部材は、前記支持部に形成された前記凸部がその中に挿入される凹部を提供する部分を含む、
成膜装置。 - 前記スリットと平行に延在するよう前記移動エリア内に設けられた遮蔽部材を更に備え、
前記支持部は、前記移動エリアでの前記ステージの移動時に、その内側の空間に前記遮蔽部材が位置する中空部を含む、
請求項1に記載の成膜装置。 - 前記壁部材は、前記移動方向における一端に、前記ステージを前記移動エリアに進入させ、且つ、該ステージを該移動エリアから退避させるための開口を提供しており、
前記開口を開閉するための蓋部を更に備える、
請求項1又は2に記載の成膜装置。 - 基板に対する成膜を行うための成膜装置であって、
チャンバを提供するチャンバ本体と、
前記チャンバを第1空間と該第1空間の下方の第2空間に区画するように設けられたスリット板であり、該スリット板を貫通するスリットが形成された、該スリット板と、
前記第1空間内においてターゲットを保持するように設けられたホルダと、
基板を支持し、且つ、前記スリットの直下のエリアを含む移動エリアにおいて前記スリットの長手方向に直交する移動方向に移動可能なステージと、
前記移動方向に沿って前記ステージを移動させる移動機構と、
を備え、
前記ステージは、
前記ターゲットからの粒子が前記スリットを介して前記移動エリア以外の前記第2空間内の他のエリアに飛散することを抑制するために、前記スリットと前記他のエリアとの間の該ステージの周囲の経路に上方及び/又は下方に折れ曲がった部分を与える一以上の凸部と、
その上に基板が搭載される搭載領域を含む搭載部と、
該搭載部を支持する支持部であり、前記搭載部の下方において延在し、且つ、前記移動機構に結合された、該支持部と、
を有し、
前記一以上の凸部は、前記搭載部内の前記搭載領域とは異なる領域に形成された凸部を含み、
前記搭載領域とは異なる前記領域に形成された前記凸部は、その内側に凹部を画成するように延在しており、
前記搭載領域とは異なる前記領域に形成された前記凸部の頂面は、前記凹部が前記スリットに対面するように前記ステージが配置されているときに、前記スリットの周囲の前記スリット板の面に対面し、
前記スリット板は、前記スリットの周囲に沿って延在し、且つ、下方に突出する別の凸部を含み、
前記移動機構は、前記凹部が前記スリットに対面するように前記ステージが配置されているときに、前記凹部に前記別の凸部を挿入するために前記ステージを上方に移動させるよう構成されている、
成膜装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016236797A JP6741564B2 (ja) | 2016-12-06 | 2016-12-06 | 成膜装置 |
KR1020170165933A KR102107282B1 (ko) | 2016-12-06 | 2017-12-05 | 성막 장치 |
US15/832,591 US10392688B2 (en) | 2016-12-06 | 2017-12-05 | Film forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016236797A JP6741564B2 (ja) | 2016-12-06 | 2016-12-06 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018090876A JP2018090876A (ja) | 2018-06-14 |
JP6741564B2 true JP6741564B2 (ja) | 2020-08-19 |
Family
ID=62240434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016236797A Active JP6741564B2 (ja) | 2016-12-06 | 2016-12-06 | 成膜装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10392688B2 (ja) |
JP (1) | JP6741564B2 (ja) |
KR (1) | KR102107282B1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6832130B2 (ja) * | 2016-11-04 | 2021-02-24 | 東京エレクトロン株式会社 | 成膜装置 |
JP7246148B2 (ja) * | 2018-06-26 | 2023-03-27 | 東京エレクトロン株式会社 | スパッタ装置 |
US11414747B2 (en) | 2018-06-26 | 2022-08-16 | Tokyo Electron Limited | Sputtering device |
JP7097777B2 (ja) | 2018-08-10 | 2022-07-08 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
US11664207B2 (en) | 2018-08-10 | 2023-05-30 | Tokyo Electron Limited | Film-forming apparatus, film-forming system, and film-forming method |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9206500B2 (en) * | 2003-08-11 | 2015-12-08 | Boris Druz | Method and apparatus for surface processing of a substrate using an energetic particle beam |
US7918940B2 (en) * | 2005-02-07 | 2011-04-05 | Semes Co., Ltd. | Apparatus for processing substrate |
US8460519B2 (en) * | 2005-10-28 | 2013-06-11 | Applied Materials Inc. | Protective offset sputtering |
JP5882934B2 (ja) * | 2012-05-09 | 2016-03-09 | シーゲイト テクノロジー エルエルシー | スパッタリング装置 |
JP5998654B2 (ja) | 2012-05-31 | 2016-09-28 | 東京エレクトロン株式会社 | 真空処理装置、真空処理方法及び記憶媒体 |
JP2014116059A (ja) * | 2012-11-16 | 2014-06-26 | Iza Corp | トンネルバリア層又はゲート絶縁膜の製造方法及びトンネルバリア層又はゲート絶縁膜の製造装置 |
KR101953432B1 (ko) * | 2012-12-26 | 2019-02-28 | 캐논 아네르바 가부시키가이샤 | 기판 처리 장치 |
JP2015067856A (ja) | 2013-09-27 | 2015-04-13 | シーゲイト テクノロジー エルエルシー | マグネトロンスパッタ装置 |
JP6634275B2 (ja) * | 2015-12-04 | 2020-01-22 | 東京エレクトロン株式会社 | 成膜システム |
-
2016
- 2016-12-06 JP JP2016236797A patent/JP6741564B2/ja active Active
-
2017
- 2017-12-05 US US15/832,591 patent/US10392688B2/en active Active
- 2017-12-05 KR KR1020170165933A patent/KR102107282B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2018090876A (ja) | 2018-06-14 |
KR20180064995A (ko) | 2018-06-15 |
US10392688B2 (en) | 2019-08-27 |
KR102107282B1 (ko) | 2020-05-06 |
US20180155817A1 (en) | 2018-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6741564B2 (ja) | 成膜装置 | |
US8986495B2 (en) | Plasma processing apparatus | |
JP4961948B2 (ja) | プラズマ処理装置及びプラズマ処理方法並びに記憶媒体 | |
US20150364347A1 (en) | Direct lift process apparatus | |
US8852386B2 (en) | Plasma processing apparatus | |
TW202025201A (zh) | 一種電容耦合電漿蝕刻設備 | |
KR102287784B1 (ko) | 성막 장치 및 성막 방법 | |
JP5736686B2 (ja) | ロードポート | |
US6695948B2 (en) | Plasma processing apparatus | |
JP6032649B2 (ja) | プラズマ処理装置 | |
WO2020004104A1 (ja) | スパッタ装置 | |
KR101892958B1 (ko) | 플라즈마 처리 장치 | |
JP7257807B2 (ja) | スパッタ装置 | |
KR102281719B1 (ko) | 적재대 기구, 처리 장치 및 적재대 기구의 동작 방법 | |
WO2021182125A1 (ja) | 成膜装置 | |
JP2013030660A (ja) | ロードポート装置及び当該装置に用いられるクランプ装置 | |
US11410837B2 (en) | Film-forming device | |
JP7246148B2 (ja) | スパッタ装置 | |
JP2015009169A (ja) | プラズマ処理装置、および、プラズマ処理方法 | |
US10254693B2 (en) | Fixing unit of plate-shaped member, PVD processing apparatus and fixing method of plate-shaped member | |
JP2007194257A (ja) | プラズマ処理装置 | |
JP2003133386A (ja) | 基板搬入出装置 | |
JP2022023640A (ja) | スパッタリング処理を行う装置及び方法 | |
JPS6323653B2 (ja) | ||
JPH09287081A (ja) | エッチング装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190705 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200312 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200414 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200522 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200630 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200727 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6741564 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |