JP6632833B2 - ウエハ状物品を処理するための方法及び装置 - Google Patents
ウエハ状物品を処理するための方法及び装置 Download PDFInfo
- Publication number
- JP6632833B2 JP6632833B2 JP2015161917A JP2015161917A JP6632833B2 JP 6632833 B2 JP6632833 B2 JP 6632833B2 JP 2015161917 A JP2015161917 A JP 2015161917A JP 2015161917 A JP2015161917 A JP 2015161917A JP 6632833 B2 JP6632833 B2 JP 6632833B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- article
- heater
- rotary chuck
- process chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 131
- 238000012545 processing Methods 0.000 title claims description 18
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 28
- 230000005855 radiation Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 82
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 23
- 239000000758 substrate Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000012530 fluid Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 229920001774 Perfluoroether Polymers 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019223491A JP6890172B2 (ja) | 2014-08-26 | 2019-12-11 | ウエハ状物品を処理するための方法及び装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/469,363 | 2014-08-26 | ||
| US14/469,363 US10490426B2 (en) | 2014-08-26 | 2014-08-26 | Method and apparatus for processing wafer-shaped articles |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019223491A Division JP6890172B2 (ja) | 2014-08-26 | 2019-12-11 | ウエハ状物品を処理するための方法及び装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016046531A JP2016046531A (ja) | 2016-04-04 |
| JP2016046531A5 JP2016046531A5 (enExample) | 2018-11-08 |
| JP6632833B2 true JP6632833B2 (ja) | 2020-01-22 |
Family
ID=55403322
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015161917A Active JP6632833B2 (ja) | 2014-08-26 | 2015-08-19 | ウエハ状物品を処理するための方法及び装置 |
| JP2019223491A Active JP6890172B2 (ja) | 2014-08-26 | 2019-12-11 | ウエハ状物品を処理するための方法及び装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019223491A Active JP6890172B2 (ja) | 2014-08-26 | 2019-12-11 | ウエハ状物品を処理するための方法及び装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10490426B2 (enExample) |
| JP (2) | JP6632833B2 (enExample) |
| KR (1) | KR102221266B1 (enExample) |
| CN (1) | CN105390416B (enExample) |
| TW (1) | TWI675419B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11195730B2 (en) | 2014-08-26 | 2021-12-07 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9748120B2 (en) | 2013-07-01 | 2017-08-29 | Lam Research Ag | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
| US9657397B2 (en) * | 2013-12-31 | 2017-05-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| US9597701B2 (en) * | 2013-12-31 | 2017-03-21 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| US20180040502A1 (en) * | 2016-08-05 | 2018-02-08 | Lam Research Ag | Apparatus for processing wafer-shaped articles |
| KR102518220B1 (ko) * | 2016-11-09 | 2023-04-04 | 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. | 공정 챔버에서 마이크로전자 기판을 처리하기 위한 자기적으로 부상되고 회전되는 척 |
| US11056358B2 (en) * | 2017-11-14 | 2021-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer cleaning apparatus and method |
| KR102099433B1 (ko) * | 2018-08-29 | 2020-04-10 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
| GB201900912D0 (en) * | 2019-01-23 | 2019-03-13 | Lam Res Ag | Apparatus for processing a wafer, and method of controlling such an apparatus |
| DE212021000253U1 (de) | 2020-08-10 | 2022-08-31 | Jiangxi Yibo E-Tech Co., Ltd. | Entwicklungskartusche, Trommelkartusche und Bilderzeugungsvorrichtung |
| US11454901B2 (en) | 2020-08-10 | 2022-09-27 | Jiangxi Yibo E-Tech Co. Ltd. | Developing cartridge |
| KR102624576B1 (ko) * | 2020-11-23 | 2024-01-16 | 세메스 주식회사 | 기판 처리 장치 |
| JP7230077B2 (ja) * | 2021-02-12 | 2023-02-28 | ウシオ電機株式会社 | 温度測定方法、光加熱方法及び光加熱装置 |
| JP7625458B2 (ja) * | 2021-03-22 | 2025-02-03 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
| JP7569752B2 (ja) * | 2021-06-07 | 2024-10-18 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| CN115896744B (zh) * | 2021-08-17 | 2025-02-21 | 北京北方华创微电子装备有限公司 | 半导体工艺设备 |
| KR102705519B1 (ko) * | 2022-02-21 | 2024-09-11 | (주)디바이스이엔지 | 기판 식각 처리장치 |
| JP2023169533A (ja) * | 2022-05-17 | 2023-11-30 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6314434A (ja) | 1986-07-04 | 1988-01-21 | Dainippon Screen Mfg Co Ltd | 基板表面処理方法および装置 |
| AT389959B (de) | 1987-11-09 | 1990-02-26 | Sez Semiconduct Equip Zubehoer | Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben |
| JP2628070B2 (ja) | 1988-06-21 | 1997-07-09 | 東京エレクトロン株式会社 | アッシング装置 |
| JP3152430B2 (ja) | 1990-10-09 | 2001-04-03 | クロリンエンジニアズ株式会社 | 有機物被膜の除去方法 |
| JPH05166718A (ja) | 1991-12-17 | 1993-07-02 | Hitachi Ltd | 半導体製造方法 |
| JPH05326483A (ja) | 1992-05-15 | 1993-12-10 | Sony Corp | ウエハ処理装置およびウエハ一貫処理装置 |
| DE59407361D1 (de) | 1993-02-08 | 1999-01-14 | Sez Semiconduct Equip Zubehoer | Träger für scheibenförmige Gegenstände |
| US6093252A (en) | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
| US5667622A (en) | 1995-08-25 | 1997-09-16 | Siemens Aktiengesellschaft | In-situ wafer temperature control apparatus for single wafer tools |
| US5818137A (en) | 1995-10-26 | 1998-10-06 | Satcon Technology, Inc. | Integrated magnetic levitation and rotation system |
| CN1220193A (zh) | 1997-12-19 | 1999-06-23 | 南亚科技股份有限公司 | 无水印产生的方法及其装置 |
| US6485531B1 (en) | 1998-09-15 | 2002-11-26 | Levitronix Llc | Process chamber |
| JP3869566B2 (ja) | 1998-11-13 | 2007-01-17 | 三菱電機株式会社 | フォトレジスト膜除去方法および装置 |
| TW459165B (en) | 1999-10-22 | 2001-10-11 | Mosel Vitelic Inc | Method for the rework of photoresist |
| US6536454B2 (en) | 2000-07-07 | 2003-03-25 | Sez Ag | Device for treating a disc-shaped object |
| TW589676B (en) | 2002-01-22 | 2004-06-01 | Toho Kasei Co Ltd | Substrate drying method and apparatus |
| JP3684356B2 (ja) | 2002-03-05 | 2005-08-17 | 株式会社カイジョー | 洗浄物の乾燥装置及び乾燥方法 |
| CN1296974C (zh) | 2002-03-18 | 2007-01-24 | 住友精密工业株式会社 | 臭氧处理方法及臭氧处理装置 |
| US6818864B2 (en) | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
| US7051743B2 (en) * | 2002-10-29 | 2006-05-30 | Yong Bae Kim | Apparatus and method for cleaning surfaces of semiconductor wafers using ozone |
| US7022193B2 (en) * | 2002-10-29 | 2006-04-04 | In Kwon Jeong | Apparatus and method for treating surfaces of semiconductor wafers using ozone |
| JP4460334B2 (ja) | 2004-03-12 | 2010-05-12 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| CN1841669A (zh) | 2005-03-29 | 2006-10-04 | 弘塑科技股份有限公司 | 晶片干燥方法 |
| JP4940635B2 (ja) * | 2005-11-14 | 2012-05-30 | 東京エレクトロン株式会社 | 加熱装置、熱処理装置及び記憶媒体 |
| JP4680044B2 (ja) | 2005-11-24 | 2011-05-11 | 東京エレクトロン株式会社 | 液処理方法、液処理装置、制御プログラム、およびコンピュータ読取可能な記憶媒体 |
| JP2007173432A (ja) | 2005-12-21 | 2007-07-05 | Seiko Epson Corp | 半導体基板処理装置及び半導体装置の製造方法 |
| KR101273604B1 (ko) | 2006-02-28 | 2013-06-11 | 램 리서치 아게 | 디스크형 물품의 액체 처리 장치 및 방법 |
| JP4937278B2 (ja) | 2006-03-08 | 2012-05-23 | ラム・リサーチ・アクチエンゲゼルシヤフト | 板状物品の流体処理用装置 |
| US20070227556A1 (en) | 2006-04-04 | 2007-10-04 | Bergman Eric J | Methods for removing photoresist |
| JP5106800B2 (ja) | 2006-06-26 | 2012-12-26 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
| CN100501921C (zh) | 2006-06-27 | 2009-06-17 | 大日本网目版制造株式会社 | 基板处理方法以及基板处理装置 |
| US7378618B1 (en) | 2006-12-14 | 2008-05-27 | Applied Materials, Inc. | Rapid conductive cooling using a secondary process plane |
| TWI490930B (zh) | 2007-05-23 | 2015-07-01 | Semes Co Ltd | 乾燥基板的裝置及方法 |
| JP5188216B2 (ja) | 2007-07-30 | 2013-04-24 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| JP2009099925A (ja) * | 2007-09-27 | 2009-05-07 | Tokyo Electron Ltd | アニール装置 |
| EP2166564B1 (en) | 2008-09-19 | 2017-04-12 | Imec | Method for removing a hardened photoresist from a semiconductor substrate |
| US8404499B2 (en) | 2009-04-20 | 2013-03-26 | Applied Materials, Inc. | LED substrate processing |
| KR20120034948A (ko) | 2010-10-04 | 2012-04-13 | 삼성전자주식회사 | 기판 건조 장치 및 이를 이용한 기판 건조 방법 |
| JP5304771B2 (ja) | 2010-11-30 | 2013-10-02 | 東京エレクトロン株式会社 | 現像装置、現像方法及び記憶媒体 |
| JP5254308B2 (ja) | 2010-12-27 | 2013-08-07 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及びその液処理方法を実行させるためのプログラムを記録した記録媒体 |
| JP5642575B2 (ja) * | 2011-01-25 | 2014-12-17 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
| US9355883B2 (en) * | 2011-09-09 | 2016-05-31 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
| US8734662B2 (en) | 2011-12-06 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Techniques providing photoresist removal |
| KR101308352B1 (ko) | 2011-12-16 | 2013-09-17 | 주식회사 엘지실트론 | 매엽식 웨이퍼 에칭장치 |
| US9548223B2 (en) * | 2011-12-23 | 2017-01-17 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| JP5889691B2 (ja) | 2012-03-28 | 2016-03-22 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
| JP6061378B2 (ja) | 2012-11-05 | 2017-01-18 | 株式会社Screenホールディングス | 基板処理装置 |
| JP6131162B2 (ja) * | 2012-11-08 | 2017-05-17 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| US20140270731A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Thermal management apparatus for solid state light source arrays |
| WO2015038309A1 (en) * | 2013-09-16 | 2015-03-19 | Applied Materials, Inc. | Method of forming strain-relaxed buffer layers |
| US10490426B2 (en) | 2014-08-26 | 2019-11-26 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
-
2014
- 2014-08-26 US US14/469,363 patent/US10490426B2/en active Active
-
2015
- 2015-08-11 KR KR1020150113445A patent/KR102221266B1/ko active Active
- 2015-08-19 JP JP2015161917A patent/JP6632833B2/ja active Active
- 2015-08-25 TW TW104127601A patent/TWI675419B/zh active
- 2015-08-26 CN CN201510530658.8A patent/CN105390416B/zh not_active Expired - Fee Related
-
2019
- 2019-11-22 US US16/692,948 patent/US11195730B2/en active Active
- 2019-12-11 JP JP2019223491A patent/JP6890172B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11195730B2 (en) | 2014-08-26 | 2021-12-07 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
Also Published As
| Publication number | Publication date |
|---|---|
| US10490426B2 (en) | 2019-11-26 |
| CN105390416A (zh) | 2016-03-09 |
| KR20160024759A (ko) | 2016-03-07 |
| KR102221266B1 (ko) | 2021-03-02 |
| JP2020065062A (ja) | 2020-04-23 |
| TW201620039A (zh) | 2016-06-01 |
| JP2016046531A (ja) | 2016-04-04 |
| US20200090956A1 (en) | 2020-03-19 |
| US11195730B2 (en) | 2021-12-07 |
| US20160064242A1 (en) | 2016-03-03 |
| JP6890172B2 (ja) | 2021-06-18 |
| CN105390416B (zh) | 2018-10-02 |
| TWI675419B (zh) | 2019-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6632833B2 (ja) | ウエハ状物品を処理するための方法及び装置 | |
| US10573542B2 (en) | Heater cleaning method | |
| KR101783079B1 (ko) | 액처리 장치 및 액처리 방법 | |
| TWI490968B (zh) | 基板處理裝置及基板處理方法 | |
| KR101694568B1 (ko) | 액처리 장치 및 액처리 방법 | |
| KR101506383B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
| JP5606992B2 (ja) | 液処理装置および液処理方法 | |
| US9548223B2 (en) | Apparatus for treating surfaces of wafer-shaped articles | |
| US20140060573A1 (en) | Substrate treatment method and substrate treatment apparatus | |
| JP6285125B2 (ja) | ウエハ状物品の液体処理のための方法及び装置 | |
| JP6008384B2 (ja) | 基板処理装置 | |
| JP5855721B2 (ja) | 液処理装置および液処理方法 | |
| JP5964372B2 (ja) | 液処理装置および液処理方法 | |
| JP5999625B2 (ja) | 基板処理方法 | |
| JP7530929B2 (ja) | 基板処理装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180809 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180926 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190612 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190625 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190924 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191112 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191211 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6632833 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |