JP6632833B2 - ウエハ状物品を処理するための方法及び装置 - Google Patents

ウエハ状物品を処理するための方法及び装置 Download PDF

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JP6632833B2
JP6632833B2 JP2015161917A JP2015161917A JP6632833B2 JP 6632833 B2 JP6632833 B2 JP 6632833B2 JP 2015161917 A JP2015161917 A JP 2015161917A JP 2015161917 A JP2015161917 A JP 2015161917A JP 6632833 B2 JP6632833 B2 JP 6632833B2
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Prior art keywords
wafer
article
heater
rotary chuck
process chamber
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Japanese (ja)
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JP2016046531A (ja
JP2016046531A5 (enExample
Inventor
レイナー・オブヴェルガー
アンドレアス・グライスナー
トーマス・ヴィーンズベルガー
フランツ・クムニク
アレッサンドロ・バルダロ
クリスチャン・トーマス・フィッシャー
ム・フン・チョウ
ラファル・リザルド・ディレヴィック
ネイサン・ラブドブスキー
アイバン・エル.・ベリー
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Lam Research AG
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Lam Research AG
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Priority to JP2019223491A priority Critical patent/JP6890172B2/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0422Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0448Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Weting (AREA)
JP2015161917A 2014-08-26 2015-08-19 ウエハ状物品を処理するための方法及び装置 Active JP6632833B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019223491A JP6890172B2 (ja) 2014-08-26 2019-12-11 ウエハ状物品を処理するための方法及び装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/469,363 US10490426B2 (en) 2014-08-26 2014-08-26 Method and apparatus for processing wafer-shaped articles
US14/469,363 2014-08-26

Related Child Applications (1)

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JP2019223491A Division JP6890172B2 (ja) 2014-08-26 2019-12-11 ウエハ状物品を処理するための方法及び装置

Publications (3)

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JP2016046531A JP2016046531A (ja) 2016-04-04
JP2016046531A5 JP2016046531A5 (enExample) 2018-11-08
JP6632833B2 true JP6632833B2 (ja) 2020-01-22

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JP2015161917A Active JP6632833B2 (ja) 2014-08-26 2015-08-19 ウエハ状物品を処理するための方法及び装置
JP2019223491A Active JP6890172B2 (ja) 2014-08-26 2019-12-11 ウエハ状物品を処理するための方法及び装置

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Country Status (5)

Country Link
US (2) US10490426B2 (enExample)
JP (2) JP6632833B2 (enExample)
KR (1) KR102221266B1 (enExample)
CN (1) CN105390416B (enExample)
TW (1) TWI675419B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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US11195730B2 (en) 2014-08-26 2021-12-07 Lam Research Ag Method and apparatus for processing wafer-shaped articles

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US20180040502A1 (en) * 2016-08-05 2018-02-08 Lam Research Ag Apparatus for processing wafer-shaped articles
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US11195730B2 (en) 2014-08-26 2021-12-07 Lam Research Ag Method and apparatus for processing wafer-shaped articles

Also Published As

Publication number Publication date
JP2016046531A (ja) 2016-04-04
TW201620039A (zh) 2016-06-01
US20160064242A1 (en) 2016-03-03
JP2020065062A (ja) 2020-04-23
KR20160024759A (ko) 2016-03-07
US11195730B2 (en) 2021-12-07
TWI675419B (zh) 2019-10-21
CN105390416B (zh) 2018-10-02
JP6890172B2 (ja) 2021-06-18
CN105390416A (zh) 2016-03-09
KR102221266B1 (ko) 2021-03-02
US10490426B2 (en) 2019-11-26
US20200090956A1 (en) 2020-03-19

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