JP6621874B2 - 独立駆動式フィルム分離機構 - Google Patents
独立駆動式フィルム分離機構 Download PDFInfo
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- JP6621874B2 JP6621874B2 JP2018124711A JP2018124711A JP6621874B2 JP 6621874 B2 JP6621874 B2 JP 6621874B2 JP 2018124711 A JP2018124711 A JP 2018124711A JP 2018124711 A JP2018124711 A JP 2018124711A JP 6621874 B2 JP6621874 B2 JP 6621874B2
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- 230000007246 mechanism Effects 0.000 title claims description 74
- 238000000926 separation method Methods 0.000 title claims description 54
- 235000012431 wafers Nutrition 0.000 claims description 38
- 230000000712 assembly Effects 0.000 claims description 16
- 238000000429 assembly Methods 0.000 claims description 16
- 238000001179 sorption measurement Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1126—Using direct fluid current against work during delaminating
- Y10T156/1132—Using vacuum directly against work during delaminating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
- Y10T156/1944—Vacuum delaminating means [e.g., vacuum chamber, etc.]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Sheets, Magazines, And Separation Thereof (AREA)
Description
本発明は、複数のフィルムを同時に分離できると共に、それぞれのフィルムの分離を独立して駆動できる、独立駆動式フィルム分離機構を提供することにより、従来のフィルム分離装置が大生産能力と独立駆動を両立できないという技術的問題を解決することを目的とする。
上記技術的課題を解決するために、本発明は、取り付けプラットフォームを含み、前記取り付けプラットフォームの片側には、それぞれウェハの底面を吸着する複数の第1の吸着アセンブリが設けられ、各前記第1の吸着アセンブリは1つの前記ウェハに対応し、前記取り付けプラットフォームには、それぞれ前記ウェハの上面に位置するフィルムを吸着する複数の第2の吸着アセンブリが設けられ、前記第1の吸着アセンブリと第2の吸着アセンブリは一対一に対応して、吸着方向が逆であり、各前記第2の吸着アセンブリはいずれも1つの駆動機構に接続されて、前記駆動機構の駆動で上下に移動でき、各前記駆動機構は独立して設けられて、いずれも前記取り付けプラットフォームに設けられる独立駆動式フィルム分離機構を提供する。
さらに、各前記第1の吸着アセンブリは、少なくとも2つの真空チャックを含み、隣接した2つの前記真空チャックが間隔を隔てて設けられ、かつそれぞれマニピュレータにより取り付けプラットフォームの同じ側に設けられる。好ましくは、前記マニピュレータは真空フォークである。
第1について、前記駆動機構は、接続ロッド、軸受、第1の回転軸、第2の回転軸付きのモータを含み、前記軸受が前記取り付けプラットフォームに設けられ、前記第1の回転軸が前記軸受を通過して前記軸受の内輪に固定的に接続され、前記接続ロッドの一端は前記第2の吸着アセンブリに接続され、他端は前記第1の回転軸の外周に固定的に嵌着され、前記第1の回転軸に第1の歯車が嵌着され、前記第2の回転軸に前記第1の歯車に噛み合わされる第2の歯車が嵌着される。
さらに、前記第1の回転軸は、前記接続ロッドに垂直である。
本発明の上記技術手段は以下のような有益な効果を有する。
Claims (10)
- 取り付けプラットフォームを含み、前記取り付けプラットフォームの片側には、それぞれウェハの底面を吸着する複数の第1の吸着アセンブリが設けられ、各前記第1の吸着アセンブリは1つの前記ウェハに対応し、前記取り付けプラットフォームには、それぞれ前記ウェハの上面に位置するフィルムを吸着する複数の第2の吸着アセンブリが設けられ、前記第1の吸着アセンブリと第2の吸着アセンブリは一対一に対応して、吸着方向が逆であり、各前記第2の吸着アセンブリはいずれも1つの駆動機構に接続されて、前記駆動機構の駆動で上下に移動でき、複数の前記駆動機構からなり、各前記駆動機構は独立して設けられて、いずれも前記取り付けプラットフォームに設けられることを特徴とする、独立駆動式フィルム分離機構。
- 各前記第1の吸着アセンブリは、いずれも同一平面に位置することを特徴とする、請求項1に記載の独立駆動式フィルム分離機構。
- 各前記第1の吸着アセンブリは、少なくとも2つの真空チャックを含み、隣接した2つの前記真空チャックが間隔を隔てて設けられ、かつそれぞれマニピュレータにより取り付けプラットフォームの同じ側に設けられることを特徴とする、請求項2に記載の独立駆動式フィルム分離機構。
- 前記マニピュレータの上面は、前記第1の吸着アセンブリを取り付けるために用いられ、前記マニピュレータの端部は、前記取り付けプラットフォームに接続されることを特徴とする、請求項3に記載の独立駆動式フィルム分離機構。
- 前記駆動機構は、接続ロッド、軸受、第1の回転軸、第2の回転軸付きのモータを含み、前記軸受が前記取り付けプラットフォームに設けられ、前記第1の回転軸が前記軸受を通過し前記軸受の内輪に固定的に接続され、前記接続ロッドの一端は前記第2の吸着アセンブリに接続され、他端は前記第1の回転軸の外周に固定的に嵌着され、前記第1の回転軸に第1の歯車が嵌着され、前記第2の回転軸に前記第1の歯車に噛み合わされる第2の歯車が嵌着されることを特徴とする、請求項1〜4のいずれか一項に記載の独立駆動式フィルム分離機構。
- 各前記第1の回転軸は、いずれも同軸であることを特徴とする、請求項5に記載の独立駆動式フィルム分離機構。
- 前記第1の回転軸は、前記接続ロッドに垂直であることを特徴とする、請求項5に記載の独立駆動式フィルム分離機構。
- 各前記第2の吸着アセンブリは、いずれも接続ロッドにより前記駆動機構に接続され、前記接続ロッドの一端は、前記第2の吸着アセンブリに接続され、他端は、前記駆動機構の回転軸の外周に固定的に嵌着され、かつ前記接続ロッドは、前記駆動機構の駆動で前記回転軸を中心に回転することを特徴とする、請求項1〜4のいずれか一項に記載の独立駆動式フィルム分離機構。
- 前記第1の吸着アセンブリと第2の吸着アセンブリは、いずれも真空チャックであり、前記真空チャックには、ホースを介して真空発生器が接続されることを特徴とする、請求項1に記載の独立駆動式フィルム分離機構。
- さらに、スライドレールを含み、前記取り付けプラットフォームは、前記スライドレールにスライド可能に設けられることを特徴とする、請求項1に記載の独立駆動式フィルム分離機構。
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CN201711228899.2 | 2017-11-29 | ||
CN201711228899.2A CN107946407A (zh) | 2017-11-29 | 2017-11-29 | 一种新型独立驱动的薄膜分离机构 |
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JP6621874B2 true JP6621874B2 (ja) | 2019-12-18 |
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US (1) | US10529888B2 (ja) |
EP (1) | EP3493246A1 (ja) |
JP (1) | JP6621874B2 (ja) |
KR (1) | KR20190063363A (ja) |
CN (1) | CN107946407A (ja) |
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WO2017062423A1 (en) * | 2015-10-07 | 2017-04-13 | Corning Incorporated | Method of laser preparation of a coated substrate to be laser cut |
CN107946407A (zh) * | 2017-11-29 | 2018-04-20 | 北京创昱科技有限公司 | 一种新型独立驱动的薄膜分离机构 |
CN108155270B (zh) * | 2017-12-13 | 2019-09-20 | 北京创昱科技有限公司 | 一种薄膜与晶片的分离装置和分离方法 |
CN109087973A (zh) * | 2018-09-27 | 2018-12-25 | 深圳市宝德自动化精密设备有限公司 | 发电薄膜分离装置 |
CN112310240A (zh) * | 2019-07-31 | 2021-02-02 | 东泰高科装备科技有限公司 | 分离装置 |
JP7149238B2 (ja) * | 2019-08-09 | 2022-10-06 | Towa株式会社 | 樹脂成形装置及び樹脂成形品の製造方法 |
CN114368618A (zh) * | 2020-10-15 | 2022-04-19 | 博众精工科技股份有限公司 | 一种翻转取料机构 |
CN117735202B (zh) * | 2023-12-28 | 2024-06-07 | 珠海科创储能科技有限公司 | 撕取设备以及撕取方法 |
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KR20190063363A (ko) | 2019-06-07 |
US10529888B2 (en) | 2020-01-07 |
WO2019105021A1 (zh) | 2019-06-06 |
CN107946407A (zh) | 2018-04-20 |
US20190165203A1 (en) | 2019-05-30 |
EP3493246A1 (en) | 2019-06-05 |
JP2019102788A (ja) | 2019-06-24 |
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