JP6612869B2 - マイクロledデバイス - Google Patents

マイクロledデバイス Download PDF

Info

Publication number
JP6612869B2
JP6612869B2 JP2017527777A JP2017527777A JP6612869B2 JP 6612869 B2 JP6612869 B2 JP 6612869B2 JP 2017527777 A JP2017527777 A JP 2017527777A JP 2017527777 A JP2017527777 A JP 2017527777A JP 6612869 B2 JP6612869 B2 JP 6612869B2
Authority
JP
Japan
Prior art keywords
μled
light
mesa structure
light source
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2017527777A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017535966A (ja
JP2017535966A5 (enExample
Inventor
ブレナン、ビンセント
パーシバル、クリストファー
ヒューズ、パドレイグ
プルシェ、アラン
オワイエ、セリーヌ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meta Platforms Technologies LLC
Original Assignee
Facebook Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Facebook Technologies LLC filed Critical Facebook Technologies LLC
Publication of JP2017535966A publication Critical patent/JP2017535966A/ja
Publication of JP2017535966A5 publication Critical patent/JP2017535966A5/ja
Application granted granted Critical
Publication of JP6612869B2 publication Critical patent/JP6612869B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2017527777A 2014-11-24 2015-11-23 マイクロledデバイス Expired - Fee Related JP6612869B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1420860.7 2014-11-24
GBGB1420860.7A GB201420860D0 (en) 2014-11-24 2014-11-24 Micro-LED device
PCT/EP2015/077332 WO2016083289A1 (en) 2014-11-24 2015-11-23 Micro-led device

Publications (3)

Publication Number Publication Date
JP2017535966A JP2017535966A (ja) 2017-11-30
JP2017535966A5 JP2017535966A5 (enExample) 2018-12-27
JP6612869B2 true JP6612869B2 (ja) 2019-11-27

Family

ID=52292442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017527777A Expired - Fee Related JP6612869B2 (ja) 2014-11-24 2015-11-23 マイクロledデバイス

Country Status (7)

Country Link
US (3) US10074774B2 (enExample)
EP (1) EP3224873B1 (enExample)
JP (1) JP6612869B2 (enExample)
KR (1) KR102447697B1 (enExample)
CN (1) CN107112388B (enExample)
GB (1) GB201420860D0 (enExample)
WO (1) WO2016083289A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201420860D0 (en) * 2014-11-24 2015-01-07 Infiniled Ltd Micro-LED device
CN109983392B (zh) 2016-12-09 2021-02-23 应用材料公司 准直led光场显示器
US10490599B2 (en) * 2017-07-13 2019-11-26 Applied Materials, Inc. Collimated, directional micro-LED light field display
US10712579B1 (en) * 2017-09-20 2020-07-14 Facebook Technologies, Llc Vortex linearization of micro-LED polarization
US11238780B2 (en) 2017-10-13 2022-02-01 Hewlett-Packard Development Company, L.P. Displays with movable privacy gates
US10720098B2 (en) * 2017-11-15 2020-07-21 Facebook Technologies, Llc Pulse-width-modulation control of micro LED
US10622519B2 (en) 2018-03-30 2020-04-14 Facebook Technologies, Llc Reduction of surface recombination losses in micro-LEDs
US10468552B2 (en) * 2018-03-30 2019-11-05 Facebook Technologies, Llc High-efficiency micro-LEDs
JP7206628B2 (ja) * 2018-04-27 2023-01-18 セイコーエプソン株式会社 発光装置およびプロジェクター
WO2019226788A1 (en) 2018-05-24 2019-11-28 Lumiode, Inc. Led display structures and fabrication of same
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11056611B2 (en) 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing
US11227970B1 (en) 2018-10-18 2022-01-18 Facebook Technologies, Llc Light emitting diodes manufacture and assembly
US11164905B2 (en) 2018-10-18 2021-11-02 Facebook Technologies, Llc Manufacture of semiconductor display device
US11257982B1 (en) * 2018-10-18 2022-02-22 Facebook Technologies, Llc Semiconductor display device
EP3899920A4 (en) 2018-12-21 2022-09-28 Lumiode, Inc. ADDRESSING FOR EMISSIVE INDICATORS
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
CN121583214A (zh) 2019-01-29 2026-02-27 奥斯兰姆奥普托半导体股份有限两合公司 视频墙、驱动器电路、控制系统及其方法
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
DE112020000762A5 (de) 2019-02-11 2021-10-28 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement, optoelektronische anordnung und verfahren
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
KR102914276B1 (ko) 2019-04-23 2026-01-16 에이엠에스-오스람 인터내셔널 게엠베하 Led 모듈, led 디스플레이 모듈 및 그 제조 방법
CN114303236A (zh) 2019-05-13 2022-04-08 奥斯兰姆奥普托半导体股份有限两合公司 多芯片承载结构
CN114127966A (zh) 2019-05-14 2022-03-01 奥斯兰姆奥普托半导体股份有限两合公司 照明单元、制造照明单元的方法、用于光电组件的转换元件、具有发光二极管和转换元件的辐射源、耦合输出结构和光电设备
DE112020002482A5 (de) 2019-05-23 2022-02-17 Osram Opto Semiconductors Gmbh Beleuchtungsanordnung, lichtführungsanordnung und verfahren
US10840418B1 (en) * 2019-05-28 2020-11-17 Facebook Technologies, Llc Fabricating parabolic-shaped LEDs
US12294039B2 (en) 2019-09-20 2025-05-06 Osram Opto Semiconductors Gmbh Optoelectronic component, semiconductor structure and method
US11309464B2 (en) 2019-10-14 2022-04-19 Facebook Technologies, Llc Micro-LED design for chief ray walk-off compensation
GB2593181B (en) 2020-03-17 2023-11-15 Plessey Semiconductors Ltd Micro-LED device
GB2593910B (en) 2020-04-08 2022-09-28 Plessey Semiconductors Ltd Micro-lightguide for micro-LED
CN115917387B (zh) * 2020-05-18 2026-01-02 艾维森纳科技有限公司 将led与波导嵌入在一起
GB2590744B (en) * 2020-06-03 2022-02-02 Plessey Semiconductors Ltd Spacer micro-LED architecture for microdisplay applications
GB2595685B (en) * 2020-06-03 2024-08-07 Plessey Semiconductors Ltd Spacer LED architecture for high efficiency micro LED displays
GB2595715B (en) 2020-06-04 2022-08-17 Plessey Semiconductors Ltd Enhanced colour conversion and collimation of micro-LED devices
TWI779672B (zh) * 2021-06-17 2022-10-01 錼創顯示科技股份有限公司 微型發光元件
KR102854252B1 (ko) * 2022-12-16 2025-09-04 (재)한국나노기술원 고출력 발광소자의 제조방법 및 그에 의해 제조된 고출력 발광소자

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006525669A (ja) * 2003-05-02 2006-11-09 ユニバーシティ・カレッジ・コークーナショナル・ユニバーシティ・オブ・アイルランド,コーク 発光ダイオード及びその製造方法
JP2005252086A (ja) * 2004-03-05 2005-09-15 Sony Corp 半導体発光素子の製造方法、半導体発光素子、集積型半導体発光装置の製造方法、集積型半導体発光装置、画像表示装置の製造方法、画像表示装置、照明装置の製造方法および照明装置
US6908219B1 (en) * 2004-03-29 2005-06-21 Valeo Sylvania Llc Optical element for a high mounted stop lamp with an LED light source
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
US8434912B2 (en) * 2006-02-27 2013-05-07 Illumination Management Solutions, Inc. LED device for wide beam generation
JP4866108B2 (ja) * 2006-03-08 2012-02-01 富士通株式会社 単一光子発生デバイス、単一光子検出デバイス及び光量子ゲート
GB2456756A (en) * 2008-01-16 2009-07-29 Sharp Kk AlInGaN Light-Emitting devices
JP2011512037A (ja) * 2008-02-08 2011-04-14 イルミテックス, インコーポレイテッド エミッタ層成形のためのシステムおよび方法
US20110012147A1 (en) * 2009-07-15 2011-01-20 Koninklijke Philips Electronics N.V. Wavelength-converted semiconductor light emitting device including a filter and a scattering structure
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101783955B1 (ko) * 2011-02-10 2017-10-11 삼성디스플레이 주식회사 발광 다이오드 패키지 및 이를 구비한 백라이트 유닛
JP5958916B2 (ja) * 2011-05-02 2016-08-02 パナソニックIpマネジメント株式会社 スーパールミネッセントダイオード
US20130175557A1 (en) * 2011-09-02 2013-07-11 The Procter & Gamble Company Light emitting apparatus
EP2815436B1 (en) * 2012-02-16 2017-12-20 Oculus VR, LLC Micro-led array with filters
GB201215632D0 (en) * 2012-09-03 2012-10-17 Infiniled Ltd Optical device
DE102014009677A1 (de) * 2014-02-19 2015-08-20 Pierre-Alain Cotte Anzeigevorrichtung mit verbessertem Kontrast
GB2526078A (en) * 2014-05-07 2015-11-18 Infiniled Ltd Methods and apparatus for improving micro-LED devices
CN106463591A (zh) * 2014-06-02 2017-02-22 3M创新有限公司 带有远程荧光粉和外壳反射器的led
GB201420860D0 (en) * 2014-11-24 2015-01-07 Infiniled Ltd Micro-LED device
WO2016122725A1 (en) * 2015-01-30 2016-08-04 Technologies Llc Sxaymiq Micro-light emitting diode with metal side mirror
TWI610459B (zh) * 2015-05-13 2018-01-01 友達光電股份有限公司 微型發光二極體裝置與其製造方法
US11437775B2 (en) * 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. Integrated light source using a laser diode
KR20170043727A (ko) * 2015-10-13 2017-04-24 삼성디스플레이 주식회사 표시 장치
GB2544335A (en) * 2015-11-13 2017-05-17 Oculus Vr Llc A method and apparatus for use in the manufacture of a display element
CN109983392B (zh) * 2016-12-09 2021-02-23 应用材料公司 准直led光场显示器
JP6910226B2 (ja) * 2017-07-07 2021-07-28 Hoya株式会社 光照射装置
US10490599B2 (en) * 2017-07-13 2019-11-26 Applied Materials, Inc. Collimated, directional micro-LED light field display
US10020422B1 (en) * 2017-09-29 2018-07-10 Oculus Vr, Llc Mesa shaped micro light emitting diode with bottom N-contact
US10720098B2 (en) * 2017-11-15 2020-07-21 Facebook Technologies, Llc Pulse-width-modulation control of micro LED
US10325791B1 (en) * 2017-12-13 2019-06-18 Facebook Technologies, Llc Formation of elastomeric layer on selective regions of light emitting device
US10326052B1 (en) * 2018-02-12 2019-06-18 Facebook Technologies, Llc Light emitting diode with field enhanced contact
WO2019226788A1 (en) * 2018-05-24 2019-11-28 Lumiode, Inc. Led display structures and fabrication of same

Also Published As

Publication number Publication date
WO2016083289A1 (en) 2016-06-02
CN107112388B (zh) 2020-02-14
CN107112388A (zh) 2017-08-29
KR102447697B1 (ko) 2022-09-29
US20190013438A1 (en) 2019-01-10
US10074774B2 (en) 2018-09-11
US10490699B2 (en) 2019-11-26
JP2017535966A (ja) 2017-11-30
EP3224873B1 (en) 2020-04-22
EP3224873A1 (en) 2017-10-04
KR20170089888A (ko) 2017-08-04
US20200044114A1 (en) 2020-02-06
GB201420860D0 (en) 2015-01-07
US10854782B2 (en) 2020-12-01
US20170271557A1 (en) 2017-09-21

Similar Documents

Publication Publication Date Title
KR102447697B1 (ko) 마이크로 led 장치
US10381513B2 (en) Enhanced light extraction
JP7041259B2 (ja) Ledからの発光をコリメートするためのナノ構造化されたメタマテリアルおよびメタサーフェス
US10074786B2 (en) LED with scattering features in substrate
US20160365383A1 (en) Optical device
KR20090064474A (ko) Led 시스템 및 방법
KR20100122485A (ko) 발광체층 쉐이핑을 위한 시스템 및 방법
CN115699342A (zh) 光学器件以及制造光学器件的方法
JP2019096660A (ja) 半導体発光素子および電子機器
Sun et al. Shape designing for light extraction enhancement bulk-GaN light-emitting diodes
KR20220153076A (ko) 마이크로 led 장치
US20130126924A1 (en) Light-emitting diode element, method for manufacturing light guide structure thereof and equipment for forming the same
KR20110059616A (ko) 광추출이 향상된 인버터 led구조
CN103050589A (zh) 包含夹在两个半导体层之间的发光层的发光元件
Zhu et al. Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission
US10698158B1 (en) Optical waveguides in micro-LED devices
US20150325747A1 (en) Semiconductor light emitting element
CN108233178A (zh) 半导体激光装置
CN112578487A (zh) 光源的扩散结构
KR20230019439A (ko) 광학 장치의 형성 방법 및 광학 장치
US11275202B1 (en) GRIN lens structure in micro-LED devices
US10347870B2 (en) Light-emitting device including concavo-convex boundary pattern
US9130134B2 (en) Semiconductor light emitting device and method for manufacturing same
KR101630371B1 (ko) 반도체 발광소자

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20180709

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20180709

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181112

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181112

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20181112

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20190111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190122

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190422

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20190520

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190717

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20191001

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191031

R150 Certificate of patent or registration of utility model

Ref document number: 6612869

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees