Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
  • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
  • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
  • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/822—Materials of the light-emitting regions
  • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
  • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
  • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/855—Optical field-shaping means, e.g. lenses
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
  • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
  • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
  • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Definitions

• the invention relates to micro-LED ( ⁇ -ED) devices. More specifically, the invention relates to, but is not limited to, ⁇ -EDs having improved collimation of light output.
• ⁇ -EDs may provide advantages of increased extraction efficiency (EE) and a "quasi-collimated" light output, that is, a light output that is at least partially directional. These advantages may be achieved by the introduction of a parabolic mesa structure to the ⁇ -ED, in which an active layer or light emitting layer sits. Light that is emitted from the light emitting layer is reflected from the internal surface of the mesa and out of the LED from an emission surface opposed to the mesa. Such a ⁇ is shown in US7518149.
• a micro-LED, ⁇ -ED comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H2*H2)/Ac, of less than 0.5, and the ⁇ -ED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.
• Reflective surface as used herein encompasses a surface of a ⁇ -ED to air, but more broadly, may also encompass an interface between two mediums.
• a reflective surface may be a surface of a ⁇ -ED between an emitting medium and another medium.
• the light may be partially or fully reflected depending on its incidence angle.
• the primary emission surface is the surface of the ⁇ -ED from which the majority of light is emitted.
• the primary emission surface may be a surface of an epilayer.
• the primary emission surface may be polished to achieve the desired surface roughness.
• the epilayer abuts a substrate of a different material
• one or both of the primary emission surface and a surface of the substrate may have a surface roughness, Ra, less than 500 nm. Further, one or both of the primary emission surface and a surface of the substrate may be polished to achieve the desired surface roughness.
• the low aspect ratio is counterintuitive to the disclosure of the art, as is the low roughness of the reflective surface.
• the combination of these features allows parasitic rays emitted from the emission source to be internally reflected, thereby reducing the half angle (and increasing the collimation) of the ⁇ -ED.
• Previous ⁇ -EDs select a high aspect ratio and/or a rough or shaped reflective and/or emission surface to enhance the extraction efficiency.
• a low roughness reflective surface and a low aspect ratio near-parabolic mesa are combined. These two parameters taken separately decrease the extraction efficiency, but it is demonstrated herein that, when combined, they provide a surprising effect of the enhancement of the light collimation.
• the reflective surface is the primary emission surface.
• the reflective surface has a roughness, Ra, of less than 300 nm.
• the reflective surface is an interface between a first material having a first refractive index and a second material having a second refractive index.
• the first material comprises an epilayer and the second material comprises a substrate upon which the ⁇ -ED is fabricated.
• the ⁇ -ED is formed from GaN on a sapphire substrate, and wherein the interface between two materials is the interface between the GaN and the sapphire substrate.
• the reflective surface has a roughness, Ra, less than 500 nm (and, in exemplary apparatus, less than 300 nm) in a region greater than or equal to a cross sectional area of a base of the mesa, and aligned with a central axis of the mesa.
• the region may be in a range from substantially equal to the cross sectional area of the base of the mesa to 1 .5 times the cross sectional area of the base of the mesa.
• the aspect ratio of the mesa structure is less than 0.3.
• the mesa structure comprises a truncated top.
• the light emitting source is offset from a central axis of the mesa structure.
• the light emitting source is offset by a distance on one or both of perpendicular axes lying in a plane parallel to the primary emission surface.
• the offset distance in each of the perpendicular axes is in a range from 1 ⁇ to 5 ⁇ .
• the offset distance in each of the perpendicular axes is in a range from 10% to 50% of the total distance from the central axis to an edge of the mesa in each of the perpendicular axes.
• the light emitting source is configured to emit light anisotropically, such that the light is emitted from the light emitting source substantially in a direction perpendicular to the direction of emission of light from the ⁇ -ED.
• the emission of light from the light emitting source is controlled using index guiding and/or dipole anisotropy.
• the ⁇ -ED further comprises an additive layer applied to the primary emission surface, wherein the additive layer attenuates light incident thereon at a given angle and/or at above a given wavelength.
• the additive layer is a multi-level dielectric filter.
• the source occupancy of the light emitting source within a light emitting layer of the mesa structure is in a range from 20% to 50%.
• a micro-LED, ⁇ -ED comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio defined by (H2 * H2)/Ac less than 0.3.
• a micro-LED, ⁇ -ED comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the light emitting source is offset from a central axis of the mesa structure.
• a micro-LED, ⁇ comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the light emitting source is configured to emit light anisotropically, such that light is emitted from the light emitting source substantially in a direction perpendicular to the direction of emission of light from the ⁇ .
• a micro-LED, ⁇ , cluster comprising a plurality of ⁇ according to any described above and formed on a common substrate.
• a display device comprising a plurality of ⁇ -EDs according to any described above.
• a micro-LED, ⁇ comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein light emitted from the light emitting source is anisotropic.
• the anisotropic nature of the light emitted from the light emitting source may be in a direction substantially parallel to the primary emission surface, substantially perpendicular to a primary direction of emission of the ⁇ -ED or substantially in a plane of the light emitting source.
• the light emitted by the light emitting source may be guided and/or encouraged within the mesa structure in a direction substantially parallel to the primary emission surface, substantially perpendicular to a primary direction of emission of the ⁇ -ED or substantially in a plane of the light emitting source.
• the light emitting source may be substantially planar.
• the primary direction of emission of the ⁇ -ED may be taken as a direction from a centre of the light emitting source and normal to the primary emission surface.
• the light emitting source may be configured to emit light weighted towards a direction substantially parallel to the primary emission surface, substantially perpendicular to a primary direction of emission of the ⁇ -ED or substantially in a plane of the light emitting source.
• the weighting may result in at least 50% of the emitted light being emitted in a range from 30 degrees, 25 degrees, 20 degrees, 15 degrees or 10 degrees either side of a direction substantially parallel to the primary emission surface, substantially perpendicular to a primary direction of emission of the ⁇ -ED or substantially in a plane of the light emitting source.
• the weighting may result in at least 40%, 50%, 60% or 70% of the emitted light being directly incident on an internal sidewall of the mesa structure.
• the anisotropic light emitting source may form part of the guiding or may aid the guiding. That is, the guiding may be provided, at least in part, by the anisotropic emission of light from the light emitting source, or the guiding may be provided by configuration of a material within the mesa and aided by the anisotropic emission of light from the light emitting source.
• Figures 2a and 2b are sections through ⁇ -EDs with mesa structures having different aspect ratios
• Figures 3a and 3b present the impact of aspect ratio variation over the half-angle and the extraction efficiency
• Figures 4a and 4b are sections through ⁇ -EDs with an unpolished (rough) primary emission surface and a polished (relatively less rough) primary emission surface;
• Figure 5 shows the decrease in half angle of light emitted by a ⁇ -ED due to reduction in roughness of a reflective surface of the ⁇ -ED
• Figures 6a and 6b are sections through ⁇ -EDs with a centrally aligned emission source and an offset emission source;
• Figures 7a and 7b are plan views of ⁇ -EDs with a centrally aligned emission source and an offset emission source;
• Figure 8 shows the effect of P contact misalignment on EE in a ⁇ -ED
• Figure 9 shows a polar plot of a modelled ⁇ -ED with a light emitting source offset from the central axis of the mesa structure by 30%, 30%;
• Figures 10a and 10b show ⁇ -EDs having isotropic and anisotropic light emitting sources
• Figure 1 1 shows a plot of transmission through a multi-layer dielectric filter applied as an additive layer to a ⁇ -ED with an emission half-angle of 20° and a typical planar LED with a lambertian profile;
• Figure 12 presents the power against current characteristics for processed ⁇ -EDs
• Figure 13 shows the EE of ⁇ -EDs with various source occupancies
• Figure 14 shows the influence of mesa aspect ratio and source occupancy on emission half angle.
• Exemplary ⁇ -EDs disclosed herein describe features for improving the collimation of the light generated by a ⁇ -ED and extracted from the device to a surrounding medium. This may be done by allowing the reflection of the parasitic light rays back inside the substrate by using a low aspect ratio mesa combined with a reflective surface in a region from the mesa structure to the primary emission surface of the ⁇ -ED.
• the reflective surface may be a polished primary emission surface or a reflective surface at a boundary between materials in the region from the mesa structure to the primary emission surface.
• the term "light” will be used in the sense that it is used in optical systems to mean not just visible light, but also electromagnetic radiation having a wavelength outside that of the visible range.
• the term “parasitic light rays” may refer to light rays emitted from a light emitting source at a point away from a focal point of a mesa structure within the ⁇ -ED. Such parasitic light rays may be reflected from an internal surface of the mesa in a way that deflects them from the collimated output that is expected if light is emitted from the focal point.
• the term “low aspect ratio” encompasses mesa aspect ratios less than 0.5 and, in specific exemplary ⁇ -EDs, less than 0.3. This is explained in greater detail below.
• a ⁇ -ED may also be operated as a photodiode. Any reference to a ⁇ -ED made herein therefore also encompasses photodiodes.
• ⁇ -EDs should have a high aspect ratio mesa structure and a rough or shaped surface through which the light passes or is extracted to the surrounding medium. This is dominated by the view that a high EE is the most desirable feature of a ⁇ -ED.
• ⁇ -EDs with a low aspect ratio mesa structure and a relatively higher reflectivity (e.g. polished) emission surface have improved collimation whilst maintaining a satisfactory EE.
• Improved collimation can be the most desirable feature of a ⁇ -ED for multiple applications, including but not limited to electro-optical systems requiring stray light and light path management or a display, as detailed below.
• Figure 1 shows a ⁇ -ED 100 having a parabolic mesa structure in which the light emitting layer sits.
• Figure 1 defines the parameters of the mesa structure in order to aid description of the ⁇ -EDs disclosed herein.
• a ⁇ -ED 100 comprises, on a substrate 101 and a semiconductor layer 102, a mesa 103, a light emitting layer 104, and an electrical contact 106.
• an emission surface 108 of the ⁇ -ED 100 is shown between the substrate 101 and the semiconductor 102.
• the emission surface 108 may alternatively be defined as between the ⁇ -ED 100 and the surrounding medium 1 10, depending on the nature of the light emitting layer and the substrate.
• the ⁇ -ED 100 comprises the following features and attributes:
• H1 Height of paraboloid focal plane above the base of the mesa
• H2 Height of light emitting layer above the base of the mesa
• H3 Height of truncated top above the base of the mesa
• H4 Height of paraboloid top above the base of the mesa
• D5 diameter of the focal plane of a paraboloid (the focal plane being the horizontal plane that intersects the focal point);
• D6 base of the semiconductor mesa diameter.
• the mesa structure may or may not have a truncated top.
• H3 is equal to H4.
• D3 is equal to zero.
• H1 can be less than, equal to or greater than H2, which respectively defines the cases when the focal point is above, in or below the LEL.
• D1 can be less than, equal to or greater than D2 depending on current spreading or current confinement in the material.
• An aspect ratio of a near parabolic mesa may be defined as (H2 * H2)/Ac.
• the aspect ratio may also be defined as (H3 * H3)/Ac in cases where the top of the mesa structure is truncated.
• the difference between an aspect ratio determined by (H2 * H2)/Ac and one determined by (H3 * H3)/Ac is negligible in many cases and (H3 * H3)/Ac may be used as a proxy for the more accurate (H2 * H2)/Ac.
• the determination of the aspect ratio does not require a mesa structure having a circular cross-section.
• the aspect ratio may also be determined for irregular mesa structures, e.g. mesa structures that are slightly deformed or elongated.
• Ac is determined by TT * (D4/2) * (D4/2).
• Figures 2a and 2b show ⁇ -EDs having near parabolic mesa structures with different aspect ratios.
• Figure 2a shows a ⁇ -ED 300 having a mesa structure with a relatively high aspect ratio
• Figure 2b shows a ⁇ -ED 302 having a mesa structure with a relatively low aspect ratio.
• ⁇ -ED 300 may have an aspect ratio of greater than or equal to 0.5
• ⁇ -ED 302 may have an aspect ratio of less than 0.5 and, in particular exemplary case, the aspect ratio may be less than or equal to 0.3.
• ⁇ -EDs 300, 302 have near-parabolic mesa structures 304a, 304b encapsulating light emitting sources 306a, 306b.
• the parabolic mesa structure may or may not have a truncated top that is the top of the parabola is flattened above the level of the light emitting source.
• the light emitted from the light emitting sources of the ⁇ -ED devices 300, 302 is considered to originate from a point source. However, the inventors have appreciated that this is not a true reflection of the way light is emitted from the light emitting sources 306a, 306b.
• the extracted beam emitted from the device 302 is more collimated when the near parabolic mesa structure aspect ratio is decreased.
• the inventors have appreciated this counter-intuitive behaviour that is due to the fact that the source cannot be considered as a single point source and this allows improvement of the light collimation output by combining a low aspect ratio mesa structure and a reflective (low roughness) surface.
• the ⁇ -ED 300 of Figure 2a has a near parabolic mesa structure with a high aspect ratio relative to the ⁇ -ED 302.
• the aspect ratio of the ⁇ -ED 300 may be 0.5 or greater.
• the aspect ratio may be less than 0.5. In other exemplary ⁇ -EDs 302, the aspect ratio may be less than 0.3. In other exemplary ⁇ -EDs 302, the aspect ratio may be less than 0.2. In other exemplary ⁇ -EDs 302, the aspect ratio may be less than 0.1 .
• the aspect ratio may be in a range from 0.1 to 0.25 or in a range from 0.01 to 0.25.
• the beam collimation of ⁇ -EDs may be increased by designing and processing the mesa structure to have an aspect ratio less than 0.5 and/or polishing the primary emission surface such that the surface roughness is reduced and the reflection properties are increased.
• the light emitting layer is encapsulated in a near-parabolic mesa structure.
• the light emitting layer may not be the same as the light emitting source.
• the light emitting layer defines the layer within the mesa structure in which the light emitting source sits.
• the light emitting layer may cover an area the same as the area of a cross section through the mesa structure at that level.
• the light emitting source may be the area of the light emitting layer that actually emits light.
• the light emitting source may be smaller than the light emitting layer.
• the mesa structure may have a low aspect ratio (typically HxH/Ac ⁇ 0.5), where H is the height of the mesa and Ac the light emitting layer area.
• the primary emission surface may be fully or partially polished or may be treated to allow internal reflection of angled rays.
• the combination of polished surface and low mesa aspect ratio allows the internal reflection of some unwanted parasitic rays, which have a large angle from the perpendicular of the primary emission surface and/or of the light emitting layer. If the primary emission surface is shaped (e.g., as a lens or other structure) the perpendicular to the primary emission surface cannot be so easily defined. In those cases the perpendicular may be defined as a perpendicular to the light emitting layer, or the axis of symmetry of the extracted beam. This allows enhancement of the emitted beam collimation.
• the light emitting source area is modelled as multiple sources or an extended source, near or in the plane of the mesa focal point. This plane may coincide with the light emitting layer. Rays emitted in any direction near the focal point of the mesa structure, but not at the exact focal point, may not be reflected in the parallel beam and increase the half-angle of the extracted beam (parasitic rays). The same may apply to light emitted from the light emitting source toward the top surface of the mesa structure (truncated top). When considering the light emitting source as a multiple or extended source, parasitic light is emitted and decreases the light collimation of the ⁇ -ED.
• a percentage of parasitic rays are not reflected by the mesa structure, and thus propagated through the ⁇ -ED directly to the primary emission surface, from which they are internally reflected.
• These parasitic rays can also be reflected by at an interface inside the material, for example at the interface GaN/Sapphire in case of a multi-material substrate or by a reflective coating layer between the substrate and the surrounding medium, or by any other reflective structures.
• Figures 3a and 3b present the impact of the HxH/Ac (aspect ratio) variation over the half-angle, which allows quantifying the collimation, (Figure 3a) and the extraction efficiency (Figure 3b) for a specific near parabolic mesa structure and source area.
• Figure 3a shows that aspect ratios below 0.5 show an unexpected decrease in half angle of the emitted beam, so an improvement of the light collimation. For different mesa structures and/or light emitting source areas, these results may change slightly.
• ⁇ -EDs relate to enhancement of the EE by increasing the aspect ratio of the mesa structure beyond 0.5.
• the extraction efficiency requires enhancement, but also the light collimation.
• EE can be sacrificed to some degree in favour of better collimation.
• Improvements in collimation of the light generated by a ⁇ -ED and extracted from the device to the surrounding medium may be obtained by polishing the primary emission surface.
• a rough or a shaped emission surface is conventionally used in the LED industry in order to maximize the extraction efficiency, at the expense of collimation.
• a rough primary emission surface reduces internal reflection of light.
• polishing the primary emission surface allows an internal reflection of the parasitic light, which leads to an improved collimation.
• the roughness of the primary emission surface defined by Ra may be 500 nm or less, 150 nm or less, 100 nm or less or 50 nm or less.
• Figures 4a and 4b show ⁇ -EDs 500, 502 with an unpolished (rough) primary emission surface 510a and a polished (relatively less rough) primary emission surface 510b.
• the primary emission surface 510a when the primary emission surface 510a is unpolished, light rays 508a that have not been reflected off an internal surface of the mesa structure 504a interact with the primary emission surface 510a and, due to the roughness, the angle at which the light rays 508a are incident on the primary emission surface 510a may be such that the light is emitted from the device 500. This may increase EE, but it also increases the half-angle of the output light and so decreases collimation.
• the primary emission surface 510b of the ⁇ -ED 502 of Figure 4b has a polished primary emission surface 510b, which is less rough than the primary emission surface 510a. Therefore, the same light rays 508b that were emitted by the device 500 are internally reflected. This may reduce the EE of the device but reduces the half-angle of the light output and so improves collimation.
• the interface at the surface determines the critical angle at which light is internally reflected.
• the reflective surface may be the primary emission surface, but in other exemplary ⁇ -EDs the reflective surface may be an interface surface between two materials.
• the interface may be provided by a single material that has a varying refractive index. In such ⁇ -EDs the refractive index of the material may continuously vary over an interface region.
• the wavelength of the emitted light may also affect the critical angle. A number of critical angles are given below for the respective materials and wavelengths.
• Exemplary ⁇ -EDs may improve the collimation of the light generated by a micro-LED device and extracted from the device to the surrounding medium, by optimizing the position of the light emitting source in the mesa and taking advantage of the parasitic rays reflected back into the substrate (not extracted to the surrounding medium). That is, exemplary ⁇ -EDs may have a light emitting source that is offset from a central axis of the near parabolic mesa structure The misalignment of the light emitting source leads to more internal reflection of the parasitic light emitted by one side of the mesa. This may result in an asymmetric profile of the emitted beam from the ⁇ -ED.
• Figures 6a and 6b show the principal.
• Figure 6a shows ⁇ -EDs 700, 702 with differently positioned light emitting sources 706a, 706b.
• the light emitting source 706a is centralised with respect to a central axis running vertically through the mesa structure 704a.
• the light emitting source 706a may be circular.
• the light emitting source 706a may be asymmetrical.
• the light source might be a ring around the centre with no emission at the centre (no emission at the focal plane).
• Light generated at the light emitting source 706a is reflected off the internal walls of the mesa structure 704a and emitted from the device 700 through the primary emission surface 710a. It can be seen that light rays, such as 708a, generated at the periphery of the light emitting source 706a and/or contacting the lower edge of the mesa structure 704a are emitted from the device 700 and provide the limit of the half-angle of the beam. In contrast, referring to Figure 6b, the light emitting source 706b of the device 702 is offset from the central axis of the mesa structure 704b.
• Figures 7a and 7b show plan views of the ⁇ -EDs 700, 702.
• the misalignment of the light emitting source 706b is shown in Figure 7b.
• Figure 7a shows the light emitting source 706a, which is aligned with the central axis of the mesa structure 704a.
• Exemplary x offsets may be in the range from 1 to 5 ⁇ or in a range from 0% to (D4- D2)/D4% of the radius of the light emitting layer.
• Exemplary y offsets may be in the range from 1 to 5 ⁇ or in a range from 0% to (D4-D2)/D4% of the radius of the light emitting layer. Any combination of x and y offsets within those ranges is also possible.
• the x and y offsets may be in a range from 10% to 50% of the radius of the light emitting layer
• FIG. 9 shows a polar plot of a modelled ⁇ -ED with a light emitting source offset from the central axis of the mesa structure by 30%, 30%.
• the collimation of light emitted from a ⁇ -ED may also be improved by having an anisotropic light emitting source. That is, a light emitting source that emits light in only selected directions.
• An anisotropic source can enhance the collimation and extraction efficiency of a ⁇ -ED by generating primarily those beam paths that are incident upon the near paraboloid mesa structure surface.
• source emission may be guided or encouraged perpendicular or primarily perpendicular to the device emission direction, that is, within the plane of the active layer of the ⁇ -ED.
• the source emission may be guided substantially parallel to the primary emission surface of the ⁇ -ED.
• a source emission perpendicular or substantially perpendicular to the device emission direction coupled with a ⁇ -ED mesa structure allows enhancing the extracted beam collimation and the extraction efficiency. If the source is isotropic then only a small proportion of the radiated light will be immediately incident upon the mesa internal reflective surface.
• Figures 10a and 10b show ⁇ -EDs 1 100, 1 102, which have isotropic and anisotropic light emitting sources respectively.
• Figure 10a shows light emitted from the light emitting source 1 106a in all directions. Of the eight exemplary light rays emitted from the light emitting source 1 106a, only light rays 8 and 4 are immediately incident upon the mesa structure internal reflective surface. The remaining light rays mostly contribute to internal scattering and loss, reducing the extraction efficiency, or exit the surface without being guided by the mesa, broadening the collimated emitted beam.
• the light rays other than 8 and 4 are typically reflected from the planar top surface of the mesa 1 104a (light rays 1 and 3), not reflected by the mesa but propagated into the substrate (light rays 5 and 7) or coincidentally contribute to (but broaden) the collimated beam either directly (light ray 6) or after planar reflection (light ray 2).
• ⁇ -EDs more than 50% of the light emitted from the light emitting source is substantially perpendicular to the direction of emission, which may be defined by a normal to the light emitting layer. In other exemplary ⁇ -EDs, more than 80% of the light emitted from the light emitting source is substantially perpendicular to the direction of emission. In other exemplary ⁇ -EDs, more than 90% of the light emitted from the light emitting source is substantially perpendicular to the direction of emission.
• the proportion of the light rays that contribute to internal scattering may increase as the aspect ratio of the mesa structure is reduced and may negatively impact on the extraction efficiency of the ⁇ -ED 1 100. Therefore to enhance extraction efficiency it is advantageous to eliminate parasitic light rays 1 , 3, 5 and 7 by source anisotropy.
• the anisotropic light emitting source 1 106b shown in Figure 10b emits predominantly in the plane of the quantum wells of the light emitting source 1 106b. A greater proportion of the generated light is incident upon the inner reflective surface of the mesa structure 1 104b and a smaller proportion of generated light contributes to internal scattering and loss of the ⁇ -ED.
• An anisotropic source may be created in several ways, not limited to the examples given below:
• Index guiding an epitaxial structure is modulated with the quantum wells of the light emitting source 1 106b embedded in low refractive index material and higher refractive indices in outer cladding regions. This has the effect of guiding (bending) generated light back into the plane of the quantum wells.
• the quantum well emission may be isotropic but the index guiding of the cladding guides the light emitted from the light emitting source 1 106b to be away from loss paths, e.g. perpendicular to the direction of emission of the ⁇ -ED 1 102.
• Dipole Anisotropy some semiconductor materials exhibit a spatial separation of electron and hole states, such that a dipole effect is apparent in certain planes.
• GaN has polar, semi-polar and non-polar planes. This spatial separation impacts the probability of recombination in certain polarisations which is linked to the direction of propagation. This can lead to enhanced photon emission in certain planes and suppressed photon emission in others, with the photons then exhibiting associated polarisation effects. This effect may be used to encourage light to be emitted from the light emitting source in a direction perpendicular to the direction of emission of the ⁇ -ED 1 102.
• Exemplary ⁇ -EDs utilise refractive index guiding or crystal anisotropy effects to encourage propagation of light in the plane of the quantum wells.
• the anisotropic emission of light from the light emitting source may increase the extraction efficiency and/or the collimation of the light emitted from the ⁇ -ED without the need to have a reflective region or low roughness surface in a range from the light emitting source to the primary emission surface.
• Collimation of the light generated by a ⁇ -ED and extracted from the ⁇ -EDs to the surrounding medium may also be reduced by the application of additive layers on the primary emission surface.
• Additive layers applied to the primary emission surface may exhibit an angular dependence, that is, they may attenuate, reflect or propagate light incident on them based on the angle of incidence of the light. When applied to a ⁇ -ED this effect may improve collimation by, for example, attenuating light incident on the additive layer at higher angles with respect to a normal to the primary emission surface.
• the transmission of the applied layer may be enhanced by application to a collimated source that matches the known angular dependence.
• Treatment of ⁇ -EDs on the primary emission surface may include the addition of layers with several alternative functions included but not limited to wavelength bandpass, high-pass, low-pass, reflecting or antireflecting filters.
• Such additive layers are known to have an angle of incidence (AOI) dependency that typically manifests as a loss mechanism when a filter is applied to a non-collimated device acting as a broad emission-angle source.
• AOI angle of incidence
• the primary function of these filters is not to affect a beam profile
• the AOI dependency means that as a secondary effect they can have beam shaping properties that enhance the functionality of the ⁇ -ED by improving collimation, suppressing scattered light and reducing cross-talk in arrays of devices.
• the performance of these layers may be enhanced relative to non-collimated sources, as the associated loss of power at higher angles is greatly reduced when applied to a ⁇ -ED.
• Figure 1 1 shows a plot of transmission through a band pass filter applied as an additive layer to a ⁇ -ED with an emission half-angle of 20° and a typical planar LED with a lambertian profile.
• the band pass filter heavily attenuates light incident on it at angles above 30°.
• the plot also shows the ratio of the ⁇ -ED transmission and the planar LED transmission through the filter. It can be seen that at small angles of incidence the ⁇ -ED delivers up to four times more power, and over the whole hemisphere the ⁇ -ED delivers twice as much power as a planar device.
• the transmission loss through the filter is less for a ⁇ -ED than when using a planar LED, as the application of a filter to a micro-LED yields a more efficient system.
• a multi-level dielectric filter may be used.
• the filter may have a pass band of 10 nm to 30 nm (in a particular example, 20nm) and a nominal transmission wavelength anywhere in the visible region from 400 to 700nm.
• Other proprietary filters can be applied from deep UV, through optical wavelengths to infrared wavelength, with low-pass band-pass or high-pass properties that all display an angular dependence resulting in an improvement of LED collimation.
• Light at angles of >10° from a normal to the light emitting layer experience attenuation effects and the majority of emission above 30° is not transmitted.
• More general types of additive layers are formed from multiple layers of dielectric film, each layer typically of the order ⁇ /4 thickness.
• Exemplary ⁇ disclosed herein may have improved wall-plug efficiency by designing the light emitting source area regarding the polished primary emission surface reflection properties.
• the light emitting source defined by its area, i.e. S area , is encapsulated in a near-parabolic mesa structure which may have a truncated top.
• the active layer also called the light emitting layer LEL, is defined by its area LEL area .
• the source occupancy is defined by the source area over the light emitting layer area: Sarea LEL are a.
• the mesa may have a low aspect ratio (H2xH2/Ac ⁇ 0.5.
• the primary emission surface may be polished (or treated to allow internal reflection of angled rays).
• the wall plug efficiency is optimized while enlarging the source area
• ⁇ -EDs show that it is possible to optimize the wall plug efficiency of a ⁇ -ED by enlarging the source occupancy.
• Figure 12 presents the power vs current characteristics for processed ⁇ -EDs (GaN with NiAu contact).
• ⁇ -ED for an input power of 0.5mW: 90 ⁇ can be injected for a source occupancy of 10%; and 98 ⁇ can be injected for a source occupancy of 30%.
• the extraction efficiency may vary between the two designs due to the loss of collimation for a large source.
• the extraction efficiency varies from: 48,2% for a source occupancy of 10% to 45.9% for a source occupancy of 30%.
• Figure 13 shows the extraction efficiency (EE) of ⁇ -EDs with various source occupancies for a specific mesa design. Other designs (mesa aspect ratio, geometrical coefficients,...) might bring slightly different results.
• a low aspect ratio mesa structure e.g. below 0.5
• a polished surface with low roughness for reflecting parasitic rays allows an improvement of the half angle of emitted light when compared to a high aspect ratio mesa structures. Enlarging the source occupancy increases the half-angle. So, for the same collimation requirement, a low aspect ratio mesa with an enlarged source occupancy can be used as shown in Figure 14.
• the mesa structure can be designed with a high aspect ratio (e.g., greater than 0.5) and a small source occupancy (e.g., 10% or less), or a low aspect ratio (e.g., less than 0.5) and a large source occupancy (e.g., greater than 50%).
• a high aspect ratio e.g., greater than 0.5
• a small source occupancy e.g., 10% or less
• a low aspect ratio e.g., less than 0.5
• a large source occupancy e.g., greater than 50%.
• Enlarged source occupancies up to 100% can be utilised in real ⁇ -ED applications and achieve acceptable levels of collimation when combined with low aspect ratio mesa structures.
• a high aspect ratio design with large source occupancy could result in unacceptable collimation. This allows trade-off of collimation with factors of forward voltage, manufacturability etc.
• Exemplary ⁇ -EDs disclosed herein provide advantages for stray light and light path management for electro-optical systems. Exemplary ⁇ -EDs simplify an optical system and packaging by removing bulk optics. In addition, exemplary ⁇ -EDs may remove background noise, reduce power requirement and/or reduce cross-talk between elements.
• exemplary ⁇ -EDs may: optimize the light coupling to the light-guide backplane; decrease the external losses; and/or enable different power savings backlighting architectures. Any of the features mentioned above may be applied to ⁇ -EDs either alone or in any combination thereof. In addition, the skilled person will be able to envisage other embodiments of the invention in accordance with the accompanying claims.

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