KR102447697B1 - 마이크로 led 장치 - Google Patents
마이크로 led 장치 Download PDFInfo
- Publication number
- KR102447697B1 KR102447697B1 KR1020177016829A KR20177016829A KR102447697B1 KR 102447697 B1 KR102447697 B1 KR 102447697B1 KR 1020177016829 A KR1020177016829 A KR 1020177016829A KR 20177016829 A KR20177016829 A KR 20177016829A KR 102447697 B1 KR102447697 B1 KR 102447697B1
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- South Korea
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- μled
- light
- light emitting
- mesa structure
- mesa
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H01L33/22—
-
- H01L33/10—
-
- H01L33/46—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1420860.7A GB201420860D0 (en) | 2014-11-24 | 2014-11-24 | Micro-LED device |
| GB1420860.7 | 2014-11-24 | ||
| PCT/EP2015/077332 WO2016083289A1 (en) | 2014-11-24 | 2015-11-23 | Micro-led device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170089888A KR20170089888A (ko) | 2017-08-04 |
| KR102447697B1 true KR102447697B1 (ko) | 2022-09-29 |
Family
ID=52292442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177016829A Active KR102447697B1 (ko) | 2014-11-24 | 2015-11-23 | 마이크로 led 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10074774B2 (enExample) |
| EP (1) | EP3224873B1 (enExample) |
| JP (1) | JP6612869B2 (enExample) |
| KR (1) | KR102447697B1 (enExample) |
| CN (1) | CN107112388B (enExample) |
| GB (1) | GB201420860D0 (enExample) |
| WO (1) | WO2016083289A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201420860D0 (en) | 2014-11-24 | 2015-01-07 | Infiniled Ltd | Micro-LED device |
| WO2018107150A1 (en) | 2016-12-09 | 2018-06-14 | Applied Materials, Inc. | Collimated led light field display |
| US10490599B2 (en) * | 2017-07-13 | 2019-11-26 | Applied Materials, Inc. | Collimated, directional micro-LED light field display |
| US10712579B1 (en) * | 2017-09-20 | 2020-07-14 | Facebook Technologies, Llc | Vortex linearization of micro-LED polarization |
| WO2019074513A1 (en) | 2017-10-13 | 2019-04-18 | Hewlett-Packard Development Company, L.P. | MOBILE PRIVACY GRID DISPLAY DEVICES |
| US10720098B2 (en) * | 2017-11-15 | 2020-07-21 | Facebook Technologies, Llc | Pulse-width-modulation control of micro LED |
| US10622519B2 (en) | 2018-03-30 | 2020-04-14 | Facebook Technologies, Llc | Reduction of surface recombination losses in micro-LEDs |
| US10468552B2 (en) | 2018-03-30 | 2019-11-05 | Facebook Technologies, Llc | High-efficiency micro-LEDs |
| JP7206628B2 (ja) * | 2018-04-27 | 2023-01-18 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
| US10652963B2 (en) | 2018-05-24 | 2020-05-12 | Lumiode, Inc. | LED display structures and fabrication of same |
| US11145786B2 (en) | 2018-09-11 | 2021-10-12 | Facebook Technologies, Llc | Methods for wafer-to-wafer bonding |
| US11056611B2 (en) | 2018-09-11 | 2021-07-06 | Facebook Technologies, Llc | Mesa formation for wafer-to-wafer bonding |
| US11342479B2 (en) | 2018-09-11 | 2022-05-24 | Facebook Technologies, Llc | Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing |
| US11257982B1 (en) * | 2018-10-18 | 2022-02-22 | Facebook Technologies, Llc | Semiconductor display device |
| US11227970B1 (en) | 2018-10-18 | 2022-01-18 | Facebook Technologies, Llc | Light emitting diodes manufacture and assembly |
| US11164905B2 (en) | 2018-10-18 | 2021-11-02 | Facebook Technologies, Llc | Manufacture of semiconductor display device |
| EP3899920A4 (en) | 2018-12-21 | 2022-09-28 | Lumiode, Inc. | ADDRESSING FOR EMISSIVE INDICATORS |
| US11302248B2 (en) | 2019-01-29 | 2022-04-12 | Osram Opto Semiconductors Gmbh | U-led, u-led device, display and method for the same |
| US12183261B2 (en) | 2019-01-29 | 2024-12-31 | Osram Opto Semiconductors Gmbh | Video wall, driver circuits, controls and method thereof |
| US11271143B2 (en) | 2019-01-29 | 2022-03-08 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| DE112020000762A5 (de) | 2019-02-11 | 2021-10-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement, optoelektronische anordnung und verfahren |
| DE112020002077A5 (de) | 2019-04-23 | 2022-01-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Led modul, led displaymodul und verfahren zu dessen herstellung |
| US11538852B2 (en) | 2019-04-23 | 2022-12-27 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| KR20220007686A (ko) | 2019-05-13 | 2022-01-18 | 오스람 옵토 세미컨덕터스 게엠베하 | 다중 칩 캐리어 구조체 |
| CN114144727A (zh) | 2019-05-23 | 2022-03-04 | 奥斯兰姆奥普托半导体股份有限两合公司 | 照明装置、导光装置和方法 |
| US10840418B1 (en) * | 2019-05-28 | 2020-11-17 | Facebook Technologies, Llc | Fabricating parabolic-shaped LEDs |
| JP7594578B2 (ja) | 2019-09-20 | 2024-12-04 | エイエムエス-オスラム インターナショナル ゲーエムベーハー | 光電子構造素子、半導体構造およびそれらに関する方法 |
| US11309464B2 (en) | 2019-10-14 | 2022-04-19 | Facebook Technologies, Llc | Micro-LED design for chief ray walk-off compensation |
| GB2593181B (en) | 2020-03-17 | 2023-11-15 | Plessey Semiconductors Ltd | Micro-LED device |
| GB2593910B (en) | 2020-04-08 | 2022-09-28 | Plessey Semiconductors Ltd | Micro-lightguide for micro-LED |
| US11619781B2 (en) * | 2020-05-18 | 2023-04-04 | Avicenatech Corp. | Embedding LEDs with waveguides |
| GB2590744B (en) * | 2020-06-03 | 2022-02-02 | Plessey Semiconductors Ltd | Spacer micro-LED architecture for microdisplay applications |
| GB2595685B (en) * | 2020-06-03 | 2024-08-07 | Plessey Semiconductors Ltd | Spacer LED architecture for high efficiency micro LED displays |
| GB2595715B (en) | 2020-06-04 | 2022-08-17 | Plessey Semiconductors Ltd | Enhanced colour conversion and collimation of micro-LED devices |
| TWI779672B (zh) * | 2021-06-17 | 2022-10-01 | 錼創顯示科技股份有限公司 | 微型發光元件 |
| KR102854252B1 (ko) * | 2022-12-16 | 2025-09-04 | (재)한국나노기술원 | 고출력 발광소자의 제조방법 및 그에 의해 제조된 고출력 발광소자 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013121051A1 (en) * | 2012-02-16 | 2013-08-22 | University College Cork, National University Of Ireland, Cork | Micro -led array with filters |
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| IE20040308A1 (en) * | 2003-05-02 | 2004-11-17 | Univ College Cork Nat Univ Ie | Light emitting diodes and the manufacture thereof |
| JP2005252086A (ja) * | 2004-03-05 | 2005-09-15 | Sony Corp | 半導体発光素子の製造方法、半導体発光素子、集積型半導体発光装置の製造方法、集積型半導体発光装置、画像表示装置の製造方法、画像表示装置、照明装置の製造方法および照明装置 |
| US6908219B1 (en) * | 2004-03-29 | 2005-06-21 | Valeo Sylvania Llc | Optical element for a high mounted stop lamp with an LED light source |
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| US7750425B2 (en) * | 2005-12-16 | 2010-07-06 | The Trustees Of Princeton University | Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier |
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| JP4866108B2 (ja) * | 2006-03-08 | 2012-02-01 | 富士通株式会社 | 単一光子発生デバイス、単一光子検出デバイス及び光量子ゲート |
| GB2456756A (en) * | 2008-01-16 | 2009-07-29 | Sharp Kk | AlInGaN Light-Emitting devices |
| KR20100122485A (ko) * | 2008-02-08 | 2010-11-22 | 일루미텍스, 인크. | 발광체층 쉐이핑을 위한 시스템 및 방법 |
| US20110012147A1 (en) * | 2009-07-15 | 2011-01-20 | Koninklijke Philips Electronics N.V. | Wavelength-converted semiconductor light emitting device including a filter and a scattering structure |
| US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| KR101783955B1 (ko) * | 2011-02-10 | 2017-10-11 | 삼성디스플레이 주식회사 | 발광 다이오드 패키지 및 이를 구비한 백라이트 유닛 |
| CN103503174A (zh) * | 2011-05-02 | 2014-01-08 | 松下电器产业株式会社 | 超辐射发光二极管 |
| US20130175557A1 (en) * | 2011-09-02 | 2013-07-11 | The Procter & Gamble Company | Light emitting apparatus |
| GB201215632D0 (en) * | 2012-09-03 | 2012-10-17 | Infiniled Ltd | Optical device |
| DE102014009677A1 (de) * | 2014-02-19 | 2015-08-20 | Pierre-Alain Cotte | Anzeigevorrichtung mit verbessertem Kontrast |
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| WO2016122725A1 (en) * | 2015-01-30 | 2016-08-04 | Technologies Llc Sxaymiq | Micro-light emitting diode with metal side mirror |
| TWI610459B (zh) * | 2015-05-13 | 2018-01-01 | 友達光電股份有限公司 | 微型發光二極體裝置與其製造方法 |
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| KR20170043727A (ko) * | 2015-10-13 | 2017-04-24 | 삼성디스플레이 주식회사 | 표시 장치 |
| GB2544335A (en) * | 2015-11-13 | 2017-05-17 | Oculus Vr Llc | A method and apparatus for use in the manufacture of a display element |
| WO2018107150A1 (en) * | 2016-12-09 | 2018-06-14 | Applied Materials, Inc. | Collimated led light field display |
| JP6910226B2 (ja) * | 2017-07-07 | 2021-07-28 | Hoya株式会社 | 光照射装置 |
| US10490599B2 (en) * | 2017-07-13 | 2019-11-26 | Applied Materials, Inc. | Collimated, directional micro-LED light field display |
| US10020422B1 (en) * | 2017-09-29 | 2018-07-10 | Oculus Vr, Llc | Mesa shaped micro light emitting diode with bottom N-contact |
| US10720098B2 (en) * | 2017-11-15 | 2020-07-21 | Facebook Technologies, Llc | Pulse-width-modulation control of micro LED |
| US10325791B1 (en) * | 2017-12-13 | 2019-06-18 | Facebook Technologies, Llc | Formation of elastomeric layer on selective regions of light emitting device |
| US10326052B1 (en) * | 2018-02-12 | 2019-06-18 | Facebook Technologies, Llc | Light emitting diode with field enhanced contact |
| US10652963B2 (en) * | 2018-05-24 | 2020-05-12 | Lumiode, Inc. | LED display structures and fabrication of same |
-
2014
- 2014-11-24 GB GBGB1420860.7A patent/GB201420860D0/en not_active Ceased
-
2015
- 2015-11-23 KR KR1020177016829A patent/KR102447697B1/ko active Active
- 2015-11-23 US US15/528,730 patent/US10074774B2/en active Active
- 2015-11-23 EP EP15816093.7A patent/EP3224873B1/en active Active
- 2015-11-23 JP JP2017527777A patent/JP6612869B2/ja not_active Expired - Fee Related
- 2015-11-23 CN CN201580073398.4A patent/CN107112388B/zh not_active Expired - Fee Related
- 2015-11-23 WO PCT/EP2015/077332 patent/WO2016083289A1/en not_active Ceased
-
2018
- 2018-08-14 US US16/103,853 patent/US10490699B2/en active Active
-
2019
- 2019-09-30 US US16/588,737 patent/US10854782B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013121051A1 (en) * | 2012-02-16 | 2013-08-22 | University College Cork, National University Of Ireland, Cork | Micro -led array with filters |
Also Published As
| Publication number | Publication date |
|---|---|
| US10074774B2 (en) | 2018-09-11 |
| CN107112388A (zh) | 2017-08-29 |
| EP3224873A1 (en) | 2017-10-04 |
| JP2017535966A (ja) | 2017-11-30 |
| JP6612869B2 (ja) | 2019-11-27 |
| US20190013438A1 (en) | 2019-01-10 |
| US20200044114A1 (en) | 2020-02-06 |
| US20170271557A1 (en) | 2017-09-21 |
| CN107112388B (zh) | 2020-02-14 |
| WO2016083289A1 (en) | 2016-06-02 |
| EP3224873B1 (en) | 2020-04-22 |
| GB201420860D0 (en) | 2015-01-07 |
| US10490699B2 (en) | 2019-11-26 |
| US10854782B2 (en) | 2020-12-01 |
| KR20170089888A (ko) | 2017-08-04 |
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