GB201420860D0 - Micro-LED device - Google Patents

Micro-LED device

Info

Publication number
GB201420860D0
GB201420860D0 GBGB1420860.7A GB201420860A GB201420860D0 GB 201420860 D0 GB201420860 D0 GB 201420860D0 GB 201420860 A GB201420860 A GB 201420860A GB 201420860 D0 GB201420860 D0 GB 201420860D0
Authority
GB
United Kingdom
Prior art keywords
micro
led device
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1420860.7A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infiniled Ltd
Original Assignee
Infiniled Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infiniled Ltd filed Critical Infiniled Ltd
Priority to GBGB1420860.7A priority Critical patent/GB201420860D0/en
Publication of GB201420860D0 publication Critical patent/GB201420860D0/en
Priority to KR1020177016829A priority patent/KR102447697B1/ko
Priority to PCT/EP2015/077332 priority patent/WO2016083289A1/en
Priority to US15/528,730 priority patent/US10074774B2/en
Priority to CN201580073398.4A priority patent/CN107112388B/zh
Priority to EP15816093.7A priority patent/EP3224873B1/en
Priority to JP2017527777A priority patent/JP6612869B2/ja
Priority to US16/103,853 priority patent/US10490699B2/en
Priority to US16/588,737 priority patent/US10854782B2/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/811Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/814Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
GBGB1420860.7A 2014-11-24 2014-11-24 Micro-LED device Ceased GB201420860D0 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GBGB1420860.7A GB201420860D0 (en) 2014-11-24 2014-11-24 Micro-LED device
KR1020177016829A KR102447697B1 (ko) 2014-11-24 2015-11-23 마이크로 led 장치
PCT/EP2015/077332 WO2016083289A1 (en) 2014-11-24 2015-11-23 Micro-led device
US15/528,730 US10074774B2 (en) 2014-11-24 2015-11-23 Micro-LED device
CN201580073398.4A CN107112388B (zh) 2014-11-24 2015-11-23 微型led装置
EP15816093.7A EP3224873B1 (en) 2014-11-24 2015-11-23 Micro-led device
JP2017527777A JP6612869B2 (ja) 2014-11-24 2015-11-23 マイクロledデバイス
US16/103,853 US10490699B2 (en) 2014-11-24 2018-08-14 Micro-LED device
US16/588,737 US10854782B2 (en) 2014-11-24 2019-09-30 Micro-LED device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1420860.7A GB201420860D0 (en) 2014-11-24 2014-11-24 Micro-LED device

Publications (1)

Publication Number Publication Date
GB201420860D0 true GB201420860D0 (en) 2015-01-07

Family

ID=52292442

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1420860.7A Ceased GB201420860D0 (en) 2014-11-24 2014-11-24 Micro-LED device

Country Status (7)

Country Link
US (3) US10074774B2 (enExample)
EP (1) EP3224873B1 (enExample)
JP (1) JP6612869B2 (enExample)
KR (1) KR102447697B1 (enExample)
CN (1) CN107112388B (enExample)
GB (1) GB201420860D0 (enExample)
WO (1) WO2016083289A1 (enExample)

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US10720098B2 (en) * 2017-11-15 2020-07-21 Facebook Technologies, Llc Pulse-width-modulation control of micro LED
US10622519B2 (en) 2018-03-30 2020-04-14 Facebook Technologies, Llc Reduction of surface recombination losses in micro-LEDs
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WO2019226788A1 (en) 2018-05-24 2019-11-28 Lumiode, Inc. Led display structures and fabrication of same
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11056611B2 (en) 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing
US11257982B1 (en) * 2018-10-18 2022-02-22 Facebook Technologies, Llc Semiconductor display device
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US11164905B2 (en) 2018-10-18 2021-11-02 Facebook Technologies, Llc Manufacture of semiconductor display device
US11380252B2 (en) 2018-12-21 2022-07-05 Lumiode, Inc. Addressing for emissive displays
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
DE112020000561A5 (de) 2019-01-29 2021-12-02 Osram Opto Semiconductors Gmbh Videowand, treiberschaltung, ansteuerungen und verfahren derselben
WO2020165185A1 (de) 2019-02-11 2020-08-20 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement, optoelektronische anordnung und verfahren
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US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
JP7608368B2 (ja) 2019-05-13 2025-01-06 エイエムエス-オスラム インターナショナル ゲーエムベーハー マルチチップ用キャリア構造体
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US10840418B1 (en) * 2019-05-28 2020-11-17 Facebook Technologies, Llc Fabricating parabolic-shaped LEDs
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GB2593181B (en) 2020-03-17 2023-11-15 Plessey Semiconductors Ltd Micro-LED device
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GB2590744B (en) * 2020-06-03 2022-02-02 Plessey Semiconductors Ltd Spacer micro-LED architecture for microdisplay applications
GB2595685B (en) * 2020-06-03 2024-08-07 Plessey Semiconductors Ltd Spacer LED architecture for high efficiency micro LED displays
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Cited By (4)

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Publication number Priority date Publication date Assignee Title
US20170271557A1 (en) * 2014-11-24 2017-09-21 Oculus Vr, Llc Micro-LED Device
US10074774B2 (en) * 2014-11-24 2018-09-11 Oculus Vr, Llc Micro-LED device
US10490699B2 (en) 2014-11-24 2019-11-26 Facebook Technologies, Llc Micro-LED device
US10854782B2 (en) 2014-11-24 2020-12-01 Facebook Technologies, Llc Micro-LED device

Also Published As

Publication number Publication date
JP6612869B2 (ja) 2019-11-27
US10854782B2 (en) 2020-12-01
US10074774B2 (en) 2018-09-11
KR20170089888A (ko) 2017-08-04
EP3224873B1 (en) 2020-04-22
WO2016083289A1 (en) 2016-06-02
CN107112388B (zh) 2020-02-14
KR102447697B1 (ko) 2022-09-29
US20190013438A1 (en) 2019-01-10
US10490699B2 (en) 2019-11-26
US20170271557A1 (en) 2017-09-21
EP3224873A1 (en) 2017-10-04
JP2017535966A (ja) 2017-11-30
CN107112388A (zh) 2017-08-29
US20200044114A1 (en) 2020-02-06

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