JP6598740B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6598740B2
JP6598740B2 JP2016140001A JP2016140001A JP6598740B2 JP 6598740 B2 JP6598740 B2 JP 6598740B2 JP 2016140001 A JP2016140001 A JP 2016140001A JP 2016140001 A JP2016140001 A JP 2016140001A JP 6598740 B2 JP6598740 B2 JP 6598740B2
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JP
Japan
Prior art keywords
case
electrode
heat
insulating substrate
semiconductor device
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Active
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JP2016140001A
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English (en)
Japanese (ja)
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JP2018011005A (ja
JP2018011005A5 (enExample
Inventor
康雄 小西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2016140001A priority Critical patent/JP6598740B2/ja
Priority to US15/456,755 priority patent/US10121719B2/en
Priority to DE102017211606.4A priority patent/DE102017211606A1/de
Priority to CN201710575698.3A priority patent/CN107622987B/zh
Publication of JP2018011005A publication Critical patent/JP2018011005A/ja
Publication of JP2018011005A5 publication Critical patent/JP2018011005A5/ja
Application granted granted Critical
Publication of JP6598740B2 publication Critical patent/JP6598740B2/ja
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    • H10W40/22—
    • H10W40/255—
    • H10W72/00—
    • H10W72/50—
    • H10W76/15—
    • H10W72/07554—
    • H10W72/547—
    • H10W90/754—
    • H10W90/755—

Landscapes

  • Engineering & Computer Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Wire Bonding (AREA)
JP2016140001A 2016-07-15 2016-07-15 半導体装置 Active JP6598740B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016140001A JP6598740B2 (ja) 2016-07-15 2016-07-15 半導体装置
US15/456,755 US10121719B2 (en) 2016-07-15 2017-03-13 Semiconductor device
DE102017211606.4A DE102017211606A1 (de) 2016-07-15 2017-07-07 Halbleitervorrichtung
CN201710575698.3A CN107622987B (zh) 2016-07-15 2017-07-14 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016140001A JP6598740B2 (ja) 2016-07-15 2016-07-15 半導体装置

Publications (3)

Publication Number Publication Date
JP2018011005A JP2018011005A (ja) 2018-01-18
JP2018011005A5 JP2018011005A5 (enExample) 2018-12-20
JP6598740B2 true JP6598740B2 (ja) 2019-10-30

Family

ID=60783084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016140001A Active JP6598740B2 (ja) 2016-07-15 2016-07-15 半導体装置

Country Status (4)

Country Link
US (1) US10121719B2 (enExample)
JP (1) JP6598740B2 (enExample)
CN (1) CN107622987B (enExample)
DE (1) DE102017211606A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7183551B2 (ja) * 2018-03-15 2022-12-06 富士電機株式会社 半導体装置
DE102019135271A1 (de) * 2019-12-19 2021-06-24 Seg Automotive Germany Gmbh Leistungsmodul, Stromrichter und Kraftfahrzeugkomponente
DE102022133512A1 (de) * 2022-12-15 2024-06-20 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Gehäuse, einer leistungselektronischen Baugruppe und mit einem Formkörper
JP7520273B1 (ja) * 2023-01-11 2024-07-22 三菱電機株式会社 パワーモジュール

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2816239B2 (ja) * 1990-06-15 1998-10-27 株式会社日立製作所 樹脂封止型半導体装置
JP2000113428A (ja) * 1998-10-08 2000-04-21 Tdk Corp 薄膜デバイス、薄膜磁気ヘッドおよび磁気抵抗効果素子並びにそれらの製造方法
JP2002246515A (ja) * 2001-02-20 2002-08-30 Mitsubishi Electric Corp 半導体装置
JP4007143B2 (ja) * 2002-10-09 2007-11-14 日産自動車株式会社 電子部品、電子部品の製造方法及び製造装置
JP5182274B2 (ja) 2009-11-17 2013-04-17 三菱電機株式会社 パワー半導体装置
US8477492B2 (en) * 2010-08-19 2013-07-02 Apple Inc. Formed PCB
JP2014187346A (ja) * 2013-02-22 2014-10-02 Tokyo Electron Ltd 焼結銀被覆膜の作製方法及び焼成装置及び半導体装置
JP6301602B2 (ja) * 2013-07-22 2018-03-28 ローム株式会社 パワーモジュールおよびその製造方法
JP6057926B2 (ja) * 2014-01-09 2017-01-11 三菱電機株式会社 半導体装置
DE102014114808B4 (de) * 2014-10-13 2018-03-08 Infineon Technologies Ag Elektronikmodul und Verfahren zur Herstellung eines Elektronikmoduls

Also Published As

Publication number Publication date
CN107622987A (zh) 2018-01-23
US10121719B2 (en) 2018-11-06
CN107622987B (zh) 2020-04-21
US20180019181A1 (en) 2018-01-18
JP2018011005A (ja) 2018-01-18
DE102017211606A1 (de) 2018-01-18

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