JP6592911B2 - 感光性エレメント - Google Patents
感光性エレメント Download PDFInfo
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- JP6592911B2 JP6592911B2 JP2015025406A JP2015025406A JP6592911B2 JP 6592911 B2 JP6592911 B2 JP 6592911B2 JP 2015025406 A JP2015025406 A JP 2015025406A JP 2015025406 A JP2015025406 A JP 2015025406A JP 6592911 B2 JP6592911 B2 JP 6592911B2
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- Prior art keywords
- support film
- photosensitive layer
- photosensitive
- meth
- layer
- Prior art date
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- 239000012965 benzophenone Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000004181 carboxyalkyl group Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000000332 coumarinyl group Chemical class O1C(=O)C(=CC2=CC=CC=C12)* 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 150000004292 cyclic ethers Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- XLYMOEINVGRTEX-UHFFFAOYSA-N fumaric acid monoethyl ester Natural products CCOC(=O)C=CC(O)=O XLYMOEINVGRTEX-UHFFFAOYSA-N 0.000 description 1
- NKHAVTQWNUWKEO-UHFFFAOYSA-N fumaric acid monomethyl ester Natural products COC(=O)C=CC(O)=O NKHAVTQWNUWKEO-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 239000012216 imaging agent Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- FDZZZRQASAIRJF-UHFFFAOYSA-M malachite green Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](C)C)C=C1 FDZZZRQASAIRJF-UHFFFAOYSA-M 0.000 description 1
- 229940107698 malachite green Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- NKHAVTQWNUWKEO-IHWYPQMZSA-N methyl hydrogen fumarate Chemical compound COC(=O)\C=C/C(O)=O NKHAVTQWNUWKEO-IHWYPQMZSA-N 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 239000002667 nucleating agent Substances 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- UORVCLMRJXCDCP-UHFFFAOYSA-N propynoic acid Chemical compound OC(=O)C#C UORVCLMRJXCDCP-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 150000007934 α,β-unsaturated carboxylic acids Chemical class 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials For Photolithography (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Polymerisation Methods In General (AREA)
- Graft Or Block Polymers (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
支持フィルム10は、ヘーズが0.01〜1.0%であり、且つ、全光線透過率が90%以上である。
感光層20は、感光性樹脂組成物から形成された層である。感光層20を構成する感光性樹脂組成物は、(A)バインダーポリマー、(B)エチレン性不飽和結合を有する光重合性化合物及び(C)光重合開始剤を含有する。以下、上記各成分について詳細に説明する。
式(III)中、R3及びR4はそれぞれ独立に水素原子又は炭素数1〜3のアルキル基を示し、EOはオキシエチレン単位を示し、POはオキシプロピレン単位を示し、m1、m2及びn1はm1+m2+n1=4〜40となるように選ばれる1〜30の整数を示す。
式(IV)中、R3及びR4はそれぞれ独立に水素原子又は炭素数1〜3のアルキル基を示し、EOはオキシエチレン単位を示し、POはオキシプロピレン単位を示し、m3、n2及びn3はm3+n2+n3=4〜40となるように選ばれる1〜30の整数を示す。
式(V)中、R3及びR4はそれぞれ独立に水素原子又は炭素数1〜3のアルキル基を示し、EOはオキシエチレン単位を示し、POはオキシプロピレン単位を示し、m4及びn4はm4+n4=4〜40となるように選ばれる1〜30の整数を示す。
本実施形態のレジストパターンの形成方法は、上記感光性エレメント1を用いて、回路形成用基板上に感光層20を形成する感光層形成工程と、感光層20の所定部分に活性光線を照射して、感光層20に光硬化部を形成させる露光工程と、上記光硬化部以外の感光層20の部分を除去する現像工程と、を含む方法である。感光層形成工程において、回路形成用基板上に、感光層20、支持フィルム10の順に積層することによって、感光層を形成してもよい。すなわち、本実施形態のレジストパターンの形成方法は、感光性エレメント1を、感光層20、支持フィルム10の順に回路形成用基板上に積層する積層工程と、支持フィルム10を通して感光層20の所定部分に活性光線を照射して、感光層20に光硬化部を形成させる露光工程と、上記光硬化部以外の感光層20の部分を除去する現像工程と、を含む方法であってもよい。
本実施形態のプリント配線板の製造方法は、上記レジストパターンの形成方法によりレジストパターンの形成された回路形成用基板を、エッチング又はめっきすることによって行われる。ここで、回路形成用基板のエッチング又はめっきは、現像されたレジストパターンをマスクとして、回路形成用基板の表面を公知の方法によりエッチング又はめっきすることによって行われる。
本実施形態の感光性エレメント1は、リジット基板と、そのリジット基板上に形成された絶縁膜とを備えるパッケージ基板に用いることもできる。この場合、感光層の光硬化部を絶縁膜として用いればよい。感光層の光硬化部を、例えば半導体パッケージ用のソルダーレジストとして用いる場合は、上述のレジストパターンの形成方法における現像終了後、はんだ耐熱性、耐薬品性等を向上させる目的で、高圧水銀灯による紫外線照射又は加熱を行うことが好ましい。紫外線を照射させる場合は必要に応じてその照射量を調整することができ、例えば0.2〜10J/cm2程度の照射量で照射を行うこともできる。また、レジストパターンを加熱する場合は、100〜170℃程度の範囲で15〜90分程行われることが好ましい。さらに紫外線照射と加熱とを同時に行うこともでき、いずれか一方を実施した後、他方を実施することもできる。紫外線の照射と加熱とを同時に行う場合、はんだ耐熱性、耐薬品性等を効果的に付与する観点から、60〜150℃に加熱することがより好ましい。
まず、下記表1に示す組成のバインダーポリマーを合成例にしたがって合成した。
撹拌機、還流冷却器、温度計、滴下ロート及び窒素ガス導入管を備えたフラスコに、質量比6:4であるトルエン及びメチルセロソルブの混合液420gを加え、窒素ガスを吹き込みながら撹拌して、80℃まで加熱した。
(GPC条件)
ポンプ:日立 L−6000型(株式会社日立製作所製)
カラム:Gelpack GL−R420 + Gelpack GL−R430 + Gelpack GL−R440(計3本)(以上、日立化成株式会社製、製品名)
溶離液:テトラヒドロフラン
測定温度:40℃
流量:2.05mL/分
検出器:日立 L−3300型RI(株式会社日立製作所製、製品名)
三角フラスコに合成したバインダーポリマーを秤量し、混合溶剤(質量比:トルエン/メタノール=70/30)を加え溶解後、指示薬としてフェノールフタレイン溶液を添加し、0.1N水酸化カリウムアルコール溶液(f=1.00)で滴定し、酸価を測定した。
(感光性エレメントの作製)
感光性エレメントの支持フィルムとして、下記表3に示すPETフィルムを用意した。各PETフィルムのヘーズ及び全光線透過率を測定した結果を表3に示す。なお、ヘーズ及び全光線透過率はヘーズメーターNDH5000(日本電色工業株式会社製)を用いて測定した。また、ヘーズはJIS K 7136(2000)で規定される方法に準拠して測定し、全光線透過率はJIS K 7361−1(1997)で規定される方法に準拠して測定した。
銅箔(厚さ:35μm)を両面に積層したガラスエポキシ材である銅張積層板(日立化成株式会社製、製品名「MLC−E−679」)の銅表面を、メックエッチボンド CZ−8100(メック社製)を用い表面粗化を行い、酸洗、水洗後、空気流で乾燥した。得られた銅張積層板を80℃に加温し、保護フィルムを剥離しながら、感光層が銅表面に接するように感光性エレメントをラミネートした。こうして、銅張積層板、感光層、支持フィルムの順に積層された積層体を得た。ラミネートは、120℃のヒートロールを用いて、0.4MPaの圧着圧力、1.5m/分のロール速度で行なった。これらの積層体は、以下に示す試験における試験片として用いた。
上記積層体を、125mm×200mm角にカットして、最短時間測定用試験片とした。最短時間測定用試験片からPETフィルムを剥離した後、30℃の1質量%炭酸ナトリウム水溶液を用いて、露光していない感光層を0.15MPaの圧力でスプレー現像し、1mm以上の未露光部が除去されたことを目視で確認できる最短の時間を、最短現像時間とした。測定結果を表3に示す。
試験片の支持フィルム上に、ネガとして41段ステップタブレット(日立化成株式会社製)を有するフォトツールを載置し、高圧水銀灯を有する投影式露光機(ウシオ電機株式会社製、製品名「UX−2240SM−XJ01」)を用いて、現像後のレジスト硬化段数が11段になる所定の照射エネルギー量となるように感光層を露光した。なお、フォトツール及び支持フィルムを介して露光した。使用した投影式露光機は、レンズの解像度として5μmを保証された装置である。
密着性を評価するため、41段ステップタブレット(日立化成株式会社製)を有するフォトツールと、密着性評価用ネガとしてライン幅/スペース幅(以下、「L/S」と示す)がx/3x(x=2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20)(単位:μm)の配線パターンを有するガラスクロムタイプのフォトツールと、高圧水銀灯を有する投影式露光機(ウシオ電機株式会社製、製品名「UX−2240SM−XJ01」)とを用いて、41段ステップタブレットの現像後の残存ステップ段数が11段となる照射エネルギー量で露光した。次に、支持フィルムを剥離し、30℃の1質量%炭酸ナトリウム水溶液を最短現像時間の2倍の時間でスプレー現像し、未露光部分を除去した。現像処理後、スペース部分(未露光部分)がきれいに除去され、かつライン部分(露光部分)がうねり、欠け、剥がれ等の不良を生じることなく形成されたレジストパターンのうち、最も小さいライン幅の値を密着性評価の指標とした。この数値が小さいほど密着性が良好であることを意味する。結果を表3に示す。なお、得られたレジストパターンは、顕微鏡を用いて、倍率1000倍で拡大して観察することで不良の有無を確認した。
図2は、現像後にピンホールが発生したレジスト表面の走査型顕微鏡写真である。上記密着性及び解像度測定試験で評価した基板を用い、感光層の露光部(「レジストライン」ともいう)の表面を走査型電子顕微鏡SU−1500(株式会社日立製作所製)を用い、倍率500倍及び試料台の傾き60度の時の観察視野を1視野(図2に示す写真を1視野とする)とし、図2に示すような直径2μm以上のピンホールの個数を測定した。ピンホール発生性は、以下の基準で評価した。観察は、無作為の10視野で行い、次いで平均値を算出し評価を行った。結果を表3に示す。
A:ピンホールが0.1個未満
B:ピンホールが0.1個以上1.0個未満
C:ピンホールが1.0個以上10個未満
D:ピンホールが10個以上
U32:粒子を含有する樹脂層を表裏に有する3層構造の二軸配向PETフィルム、東レ株式会社製
U48:粒子を含有する樹脂層を表裏に有する3層構造の二軸配向PETフィルム、東レ株式会社製
FB40:粒子を含有する樹脂層を表裏に有する3層構造の二軸配向PETフィルム、東レ株式会社製
QS48:粒子を含有する樹脂層を表裏に有する3層構造の二軸配向PETフィルム、東レ株式会社製
A1517:粒子を含有する樹脂層を一方の面に有する2層構造の二軸配向PETフィルム、東洋紡株式会社製
A4100:粒子を含有する樹脂層を一方の面に有する2層構造の二軸配向PETフィルム、東洋紡株式会社製
U40:粒子を含有する樹脂層を表裏に有する3層構造の二軸配向PETフィルム、東レ株式会社製
G2H:粒子を含有する単層構造の二軸配向PETフィルム、帝人デュポンフィルム株式会社製
Claims (3)
- 支持フィルムと、該支持フィルム上に形成された感光層とを備える感光性エレメントを、前記感光層、前記支持フィルムの順に回路形成用基板上に積層する積層工程と、
前記支持フィルムを通して前記感光層の所定部分に投影式露光機を用いて活性光線を照射して、光硬化部を形成させる露光工程と、
前記光硬化部以外の未露光部を除去する現像工程と、を含み、
前記支持フィルムのヘーズが0.01〜1.0%であり、且つ、前記支持フィルムの全光線透過率が90%以上であり、
前記感光層が、バインダーポリマー、エチレン性不飽和結合を有する光重合性化合物及び光重合開始剤を含有する、レジストパターンの形成方法。 - 前記投影式露光機の開口数が0.1未満である、請求項1に記載のレジストパターンの形成方法。
- 請求項1又は2に記載のレジストパターンの形成方法によりレジストパターンの形成された回路形成用基板を、エッチング又はめっきする工程を含む、プリント配線板の製造方法。
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