JP6591347B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6591347B2
JP6591347B2 JP2016112050A JP2016112050A JP6591347B2 JP 6591347 B2 JP6591347 B2 JP 6591347B2 JP 2016112050 A JP2016112050 A JP 2016112050A JP 2016112050 A JP2016112050 A JP 2016112050A JP 6591347 B2 JP6591347 B2 JP 6591347B2
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region
insulating film
etching
semiconductor
layer
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JP2016112050A
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Japanese (ja)
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JP2017220494A (ja
JP2017220494A5 (enExample
Inventor
秀樹 槇山
秀樹 槇山
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2016112050A priority Critical patent/JP6591347B2/ja
Priority to CN201710356005.1A priority patent/CN107464784B/zh
Priority to US15/603,564 priority patent/US9960183B2/en
Publication of JP2017220494A publication Critical patent/JP2017220494A/ja
Priority to US15/942,754 priority patent/US10297613B2/en
Publication of JP2017220494A5 publication Critical patent/JP2017220494A5/ja
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Publication of JP6591347B2 publication Critical patent/JP6591347B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2016112050A 2016-06-03 2016-06-03 半導体装置の製造方法 Active JP6591347B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016112050A JP6591347B2 (ja) 2016-06-03 2016-06-03 半導体装置の製造方法
CN201710356005.1A CN107464784B (zh) 2016-06-03 2017-05-19 半导体器件的制造方法
US15/603,564 US9960183B2 (en) 2016-06-03 2017-05-24 Method of manufacturing semiconductor device
US15/942,754 US10297613B2 (en) 2016-06-03 2018-04-02 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016112050A JP6591347B2 (ja) 2016-06-03 2016-06-03 半導体装置の製造方法

Publications (3)

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JP2017220494A JP2017220494A (ja) 2017-12-14
JP2017220494A5 JP2017220494A5 (enExample) 2018-12-27
JP6591347B2 true JP6591347B2 (ja) 2019-10-16

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JP2016112050A Active JP6591347B2 (ja) 2016-06-03 2016-06-03 半導体装置の製造方法

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US (2) US9960183B2 (enExample)
JP (1) JP6591347B2 (enExample)
CN (1) CN107464784B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6591347B2 (ja) * 2016-06-03 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2018164140A1 (ja) 2017-03-07 2018-09-13 Ａｇｃ株式会社 撥水撥油性物品、その製造方法及び撥水撥油剤組成物
JP6867283B2 (ja) * 2017-12-28 2021-04-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN112151672B (zh) * 2019-06-28 2023-07-25 北京时代全芯存储技术股份有限公司 积层体的制造方法
CN110416162A (zh) * 2019-08-29 2019-11-05 上海华力集成电路制造有限公司 Fd-soi的工艺方法
US11348944B2 (en) * 2020-04-17 2022-05-31 Taiwan Semiconductor Manufacturing Company Limited Semiconductor wafer with devices having different top layer thicknesses
US11398403B2 (en) * 2020-05-28 2022-07-26 Taiwan Semiconductor Manufacturing Company Limited Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same
US12020980B2 (en) * 2021-07-07 2024-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and forming method thereof
CN115346912B (zh) * 2022-10-19 2023-01-03 广州粤芯半导体技术有限公司 浅沟槽隔离结构的制备方法

Family Cites Families (22)

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US6060748A (en) * 1996-12-26 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device using a silicon-on-insulator substrate
JP2002009144A (ja) 2000-06-23 2002-01-11 Nec Corp 半導体装置の製造方法
JP2004363121A (ja) 2003-05-30 2004-12-24 Seiko Epson Corp 半導体装置の製造方法
US7091106B2 (en) 2004-03-04 2006-08-15 Advanced Micro Devices, Inc. Method of reducing STI divot formation during semiconductor device fabrication
US7002214B1 (en) * 2004-07-30 2006-02-21 International Business Machines Corporation Ultra-thin body super-steep retrograde well (SSRW) FET devices
JP2006222329A (ja) 2005-02-14 2006-08-24 Elpida Memory Inc 半導体装置
DE102005030585B4 (de) * 2005-06-30 2011-07-28 Globalfoundries Inc. Halbleiterbauelement mit einem vertikalen Entkopplungskondensator und Verfahren zu seiner Herstellung
JP2007123688A (ja) * 2005-10-31 2007-05-17 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP5222520B2 (ja) * 2007-10-11 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102007052097B4 (de) * 2007-10-31 2010-10-28 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines SOI-Bauelements mit einer Substratdiode
US7893502B2 (en) * 2009-05-14 2011-02-22 International Business Machines Corporation Threshold voltage improvement employing fluorine implantation and adjustment oxide layer
JP5578001B2 (ja) * 2010-09-30 2014-08-27 富士通セミコンダクター株式会社 半導体装置の製造方法
US8227311B2 (en) * 2010-10-07 2012-07-24 International Business Machines Corporation Method of forming enhanced capacitance trench capacitor
JP5837387B2 (ja) * 2011-10-11 2015-12-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置および半導体集積回路装置の製造方法
JP2014204041A (ja) * 2013-04-08 2014-10-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2014229634A (ja) * 2013-05-17 2014-12-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP6178118B2 (ja) * 2013-05-31 2017-08-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6076887B2 (ja) * 2013-11-29 2017-02-08 株式会社東芝 半導体装置の製造方法
JP6275559B2 (ja) * 2014-06-13 2018-02-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6355460B2 (ja) * 2014-07-08 2018-07-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2016102737A (ja) * 2014-11-28 2016-06-02 セイコーエプソン株式会社 電子デバイス、物理量センサー、圧力センサー、振動子、高度計、電子機器および移動体
JP6591347B2 (ja) * 2016-06-03 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US20180226431A1 (en) 2018-08-09
US9960183B2 (en) 2018-05-01
JP2017220494A (ja) 2017-12-14
CN107464784B (zh) 2022-12-06
CN107464784A (zh) 2017-12-12
US10297613B2 (en) 2019-05-21
US20170352687A1 (en) 2017-12-07

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