JP6589807B2 - シリコンウェーハの研磨方法、シリコンウェーハの製造方法およびシリコンウェーハ - Google Patents

シリコンウェーハの研磨方法、シリコンウェーハの製造方法およびシリコンウェーハ Download PDF

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Publication number
JP6589807B2
JP6589807B2 JP2016202039A JP2016202039A JP6589807B2 JP 6589807 B2 JP6589807 B2 JP 6589807B2 JP 2016202039 A JP2016202039 A JP 2016202039A JP 2016202039 A JP2016202039 A JP 2016202039A JP 6589807 B2 JP6589807 B2 JP 6589807B2
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Japan
Prior art keywords
silicon wafer
notch
polishing
chamfering
wafer
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JP2016202039A
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English (en)
Japanese (ja)
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JP2018064046A (ja
Inventor
雅史 西村
雅史 西村
宏知 田中
宏知 田中
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Sumco Corp
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Sumco Corp
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Publication date
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Priority to JP2016202039A priority Critical patent/JP6589807B2/ja
Priority to TW106128075A priority patent/TWI680512B/zh
Priority to KR1020197008751A priority patent/KR102165589B1/ko
Priority to PCT/JP2017/030148 priority patent/WO2018070108A1/ja
Priority to DE112017005226.2T priority patent/DE112017005226T5/de
Priority to CN201780062687.3A priority patent/CN110140195B/zh
Publication of JP2018064046A publication Critical patent/JP2018064046A/ja
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Publication of JP6589807B2 publication Critical patent/JP6589807B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016202039A 2016-10-13 2016-10-13 シリコンウェーハの研磨方法、シリコンウェーハの製造方法およびシリコンウェーハ Active JP6589807B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2016202039A JP6589807B2 (ja) 2016-10-13 2016-10-13 シリコンウェーハの研磨方法、シリコンウェーハの製造方法およびシリコンウェーハ
TW106128075A TWI680512B (zh) 2016-10-13 2017-08-18 矽晶圓之研磨方法、矽晶圓之製造方法及矽晶圓
KR1020197008751A KR102165589B1 (ko) 2016-10-13 2017-08-23 실리콘 웨이퍼 연마 방법, 실리콘 웨이퍼 제조 방법 및 실리콘 웨이퍼
PCT/JP2017/030148 WO2018070108A1 (ja) 2016-10-13 2017-08-23 シリコンウェーハの研磨方法、シリコンウェーハの製造方法およびシリコンウェーハ
DE112017005226.2T DE112017005226T5 (de) 2016-10-13 2017-08-23 Verfahren zum Polieren eines Siliciumwafers, Verfahren zur Herstellung eines Siliciumwafers, sowie Siliciumwafer
CN201780062687.3A CN110140195B (zh) 2016-10-13 2017-08-23 硅晶圆的研磨方法、硅晶圆的制造方法和硅晶圆

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016202039A JP6589807B2 (ja) 2016-10-13 2016-10-13 シリコンウェーハの研磨方法、シリコンウェーハの製造方法およびシリコンウェーハ

Publications (2)

Publication Number Publication Date
JP2018064046A JP2018064046A (ja) 2018-04-19
JP6589807B2 true JP6589807B2 (ja) 2019-10-16

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JP2016202039A Active JP6589807B2 (ja) 2016-10-13 2016-10-13 シリコンウェーハの研磨方法、シリコンウェーハの製造方法およびシリコンウェーハ

Country Status (6)

Country Link
JP (1) JP6589807B2 (zh)
KR (1) KR102165589B1 (zh)
CN (1) CN110140195B (zh)
DE (1) DE112017005226T5 (zh)
TW (1) TWI680512B (zh)
WO (1) WO2018070108A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6717353B2 (ja) * 2018-10-22 2020-07-01 株式会社Sumco レーザマーク付きシリコンウェーハの製造方法
JP6939752B2 (ja) * 2018-11-19 2021-09-22 株式会社Sumco シリコンウェーハのヘリカル面取り加工方法
CN114267589A (zh) * 2021-12-27 2022-04-01 西安奕斯伟材料科技有限公司 一种晶圆表面损伤深度测量方法及系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001176824A (ja) * 1999-12-17 2001-06-29 Mitsubishi Materials Silicon Corp 半導体ウェーハ、その面取り面の加工方法およびその装置
JP4144834B2 (ja) * 2000-07-12 2008-09-03 株式会社日平トヤマ 半導体ウェーハのノッチ研削装置
JP2002346772A (ja) * 2001-05-21 2002-12-04 Sumitomo Mitsubishi Silicon Corp レーザマーキングウェーハ
JP2003077872A (ja) * 2001-09-06 2003-03-14 Speedfam Co Ltd 半導体ウェハ研磨装置及び研磨方法
JP2003177100A (ja) * 2001-12-12 2003-06-27 Sumitomo Mitsubishi Silicon Corp 鏡面面取りウェーハの品質評価方法
JP2004281550A (ja) * 2003-03-13 2004-10-07 Dowa Mining Co Ltd 半導体ウエハおよびその面取り加工方法
JP4253643B2 (ja) 2005-03-22 2009-04-15 株式会社リガク 単結晶インゴットの位置決め用治具
JP2009016602A (ja) * 2007-07-05 2009-01-22 Denso Corp 炭化珪素半導体装置の製造方法
JP2009259959A (ja) * 2008-04-15 2009-11-05 Sumco Corp 薄厚シリコンウェーハおよびその製造方法
JP5504667B2 (ja) 2009-03-25 2014-05-28 株式会社Ｓｕｍｃｏ シリコンウェーハおよびその製造方法
JP5979081B2 (ja) * 2013-05-28 2016-08-24 信越半導体株式会社 単結晶ウェーハの製造方法
JP6176855B2 (ja) 2014-05-29 2017-08-09 京セラドキュメントソリューションズ株式会社 画像形成装置

Also Published As

Publication number Publication date
KR102165589B1 (ko) 2020-10-14
WO2018070108A1 (ja) 2018-04-19
DE112017005226T5 (de) 2019-07-18
JP2018064046A (ja) 2018-04-19
CN110140195B (zh) 2022-11-08
TW201820474A (zh) 2018-06-01
TWI680512B (zh) 2019-12-21
KR20190040328A (ko) 2019-04-17
CN110140195A (zh) 2019-08-16

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