JP6542514B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
JP6542514B2
JP6542514B2 JP2014162643A JP2014162643A JP6542514B2 JP 6542514 B2 JP6542514 B2 JP 6542514B2 JP 2014162643 A JP2014162643 A JP 2014162643A JP 2014162643 A JP2014162643 A JP 2014162643A JP 6542514 B2 JP6542514 B2 JP 6542514B2
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Japan
Prior art keywords
semiconductor laser
chip
region
metallization
capacitor
Prior art date
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Application number
JP2014162643A
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English (en)
Japanese (ja)
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JP2016039304A (ja
JP2016039304A5 (enExample
Inventor
良喜 岡
良喜 岡
敬司 中澤
敬司 中澤
充宜 宮田
充宜 宮田
浩充 河村
浩充 河村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2014162643A priority Critical patent/JP6542514B2/ja
Priority to PCT/JP2015/003966 priority patent/WO2016021203A1/en
Priority to CN201580001570.5A priority patent/CN105518950B/zh
Publication of JP2016039304A publication Critical patent/JP2016039304A/ja
Publication of JP2016039304A5 publication Critical patent/JP2016039304A5/ja
Application granted granted Critical
Publication of JP6542514B2 publication Critical patent/JP6542514B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2014162643A 2014-08-08 2014-08-08 半導体レーザ装置 Active JP6542514B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014162643A JP6542514B2 (ja) 2014-08-08 2014-08-08 半導体レーザ装置
PCT/JP2015/003966 WO2016021203A1 (en) 2014-08-08 2015-08-06 Laser assembly and method to assemble laser assembly
CN201580001570.5A CN105518950B (zh) 2014-08-08 2015-08-06 激光组件和组装激光组件的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014162643A JP6542514B2 (ja) 2014-08-08 2014-08-08 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2016039304A JP2016039304A (ja) 2016-03-22
JP2016039304A5 JP2016039304A5 (enExample) 2017-07-27
JP6542514B2 true JP6542514B2 (ja) 2019-07-10

Family

ID=55263494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014162643A Active JP6542514B2 (ja) 2014-08-08 2014-08-08 半導体レーザ装置

Country Status (3)

Country Link
JP (1) JP6542514B2 (enExample)
CN (1) CN105518950B (enExample)
WO (1) WO2016021203A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6794140B2 (ja) * 2016-05-23 2020-12-02 オプト エレクトロニクス ソリューションズ 光送信機及びこれを含む光モジュール
DE102017108050B4 (de) 2017-04-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstrahlungsquelle
JP7097169B2 (ja) * 2017-10-27 2022-07-07 古河電気工業株式会社 光素子モジュール及び光素子モジュールの評価方法
JP2019087656A (ja) * 2017-11-08 2019-06-06 三菱電機株式会社 光モジュールおよびその製造方法
US11811191B2 (en) * 2019-08-22 2023-11-07 Sumitomo Electric Device Innovations, Inc. Optical semiconductor device and carrier
CN114556724B (zh) * 2019-10-25 2024-04-02 三菱电机株式会社 光半导体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4547063B2 (ja) * 2000-02-24 2010-09-22 シチズン電子株式会社 レーザダイオード用マウント構造及びその実装方法
JP3889933B2 (ja) * 2001-03-02 2007-03-07 シャープ株式会社 半導体発光装置
JP4349552B2 (ja) * 2001-12-26 2009-10-21 株式会社Ｋｅｌｋ ペルチェ素子熱電変換モジュール、ペルチェ素子熱電変換モジュールの製造方法および光通信モジュール
JP2005203553A (ja) * 2004-01-15 2005-07-28 Matsushita Electric Ind Co Ltd 光送受信モジュールおよび光送受信装置
US7317742B2 (en) * 2004-02-19 2008-01-08 Sumitomo Electric Industries, Ltd. Optical sub-assembly having a thermo-electric cooler and an optical transceiver using the optical sub-assembly
JP4772560B2 (ja) * 2006-03-31 2011-09-14 住友電工デバイス・イノベーション株式会社 光半導体装置、およびその制御方法
JP4994173B2 (ja) * 2007-09-27 2012-08-08 京セラ株式会社 電子部品
JP2012119637A (ja) * 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
US8821042B2 (en) * 2011-07-04 2014-09-02 Sumitomo Electic Industries, Ltd. Optical module with lens assembly directly mounted on carrier by soldering and laser diode indirectly mounted on carrier through sub-mount
JP2013074187A (ja) * 2011-09-28 2013-04-22 Oki Electric Ind Co Ltd モード同期半導体レーザ装置及びモード同期半導体レーザ装置の制御方法

Also Published As

Publication number Publication date
JP2016039304A (ja) 2016-03-22
CN105518950B (zh) 2018-12-07
CN105518950A (zh) 2016-04-20
WO2016021203A1 (en) 2016-02-11

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