CN114556724B - 光半导体装置 - Google Patents

光半导体装置 Download PDF

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Publication number
CN114556724B
CN114556724B CN201980101311.8A CN201980101311A CN114556724B CN 114556724 B CN114556724 B CN 114556724B CN 201980101311 A CN201980101311 A CN 201980101311A CN 114556724 B CN114556724 B CN 114556724B
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conductive pattern
capacitor
semiconductor device
optical semiconductor
submount
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CN114556724A (zh
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板本裕光
松末明洋
品田卓郎
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10015—Non-printed capacitor
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10022—Non-printed resistor

Abstract

第1导电图案(13)设置于次基台(7)的上表面。GND图案(9)设置于次基台(7)的下表面侧。电容器(3)的下表面电极(21)与第1导电图案(13)通过焊料(22)接合。电容器(3)的上表面电极(23)与发光元件(2)连接。终端电阻(4)与第1导电图案(13)连接。第1导电图案(13)具有在俯视观察时从电容器(3)伸出的伸出部(25)。伸出部(25)的横向宽度比电容器(3)的横向宽度窄。

Description

光半导体装置
技术领域
本发明涉及光半导体装置。
背景技术
光半导体装置具有发光元件、电容器以及终端电阻(例如，参照专利文献1)。电容器的下表面电极经由焊料与设置于次基台的上表面的导电图案连接。以往，使导电图案比电容器大。由此，能够从上方观察从电容器伸出的焊料，而进行焊料的润湿性的外观检查。
专利文献1：日本特开2016-180779号公报
但是，通过增大导电图案，从而次基台的下表面侧的GND图案与上表面侧的导电图案之间的寄生电容增大。因此，存在光半导体装置的使用频率下的振幅响应减少，噪声增加，信号的灵敏度降低的问题。
发明内容
本发明是为了解决上述课题而做出的，其目在于得到一种能够进行焊料的外观检查，并且能够提高信号的灵敏度的光半导体装置。
本发明所涉及的光半导体装置的特征在于，具备：次基台；第1导电图案，设置于上述次基台的上表面；GND图案，设置于上述次基台的下表面侧；发光元件；电容器，具有与上述第1导电图案通过焊料接合的下表面电极、和与上述发光元件连接的上表面电极；以及终端电阻，与上述第1导电图案连接，上述第1导电图案具有在俯视观察时从上述电容器伸出的伸出部，上述伸出部的横向宽度比上述电容器的横向宽度窄。
在本发明中，导电图案具有在俯视观察时从电容器伸出的伸出部。由此，能够从上方观察伸出部上的焊料，而进行焊料的外观检查。另外，导电图案的伸出部的横向宽度比电容器的横向宽度窄。由此，由于次基台的下表面侧的GND图案与上表面侧的导电图案之间的寄生电容减少，所以能够提高高频性能。
附图说明
图1是实施方式1所涉及的光半导体装置的电路图。
图2是表示实施方式1所涉及的光半导体装置的立体图。
图3是表示实施方式1所涉及的光半导体装置的俯视图。
图4是表示实施方式1所涉及的光半导体装置的侧视图。
图5是表示比较例所涉及的光半导体装置的俯视图。
图6是表示信号的衰减量与频率的关系的模拟结果。
图7是表示实施方式2所涉及的光半导体装置的俯视图。
图8是表示实施方式3所涉及的光半导体装置的俯视图。
图9是表示实施方式4所涉及的光半导体装置的侧视图。
图10是表示实施方式4所涉及的光半导体装置的设置于载体基板与次基台之间的导电图案的俯视图。
具体实施方式
参照附图对实施方式所涉及的光半导体装置进行说明。对相同或对应的构成要素标注相同的附图标记，有时省略重复说明。
实施方式1
图1是实施方式1所涉及的光半导体装置的电路图。光半导体装置1是TOSA(Transmitter Optical Sub-Assembly：光发射次模块)，具有发光元件2、电容器3以及终端电阻4。发光元件2的阳极与驱动电路5连接，阴极与GND连接。电容器3以及终端电阻4与发光元件2并联连接。发光元件2例如为EML-LD(Electro-absorption Modulator Laser Diode：电吸收调制器激光二极管)。发光元件2根据从驱动电路5供给的高频的调制电信号而发光。此外，在图1中，电容器3和终端电阻4从驱动电路5朝向GND依次连接，但并不局限于此，也可以从驱动电路5侧按照终端电阻4、电容器3的顺序连接。
图2是表示实施方式1所涉及的光半导体装置的立体图。图3是表示实施方式1所涉及的光半导体装置的俯视图。图4是表示实施方式1所涉及的光半导体装置的侧视图。
在载体基板6之上设置有次基台7。载体基板6和次基台7例如由AlN构成。在载体基板6的下表面设置有导电图案8。在载体基板6的上表面设置有作为GND图案的导电图案9。在本实施方式中载体基板6的上下表面的导电图案8、9通过通孔等而相互导通。在次基台7的下表面设置有导电图案10。载体基板6的导电图案9与次基台7的导电图案10通过焊料等而接合。在次基台7的上表面设置有相互分离的导电图案11～13。此外，导电图案9～13的表面被实施镀金。
导电图案11通过线材14与调制电信号用布线15连接。导电图案12通过线材16与GND布线17连接。此外，GND布线17设置于调制电信号用布线15的两侧，导电图案12配置于导电图案11的两侧，而分别构成共面波导。调制电信号用布线15以及导电图案11传递来自驱动电路5的调制电信号。
发光元件2设置于导电图案12之上。发光元件2的下表面电极18与导电图案12通过焊料等而接合。发光元件2的上表面电极19与导电图案11通过线材20连接。
电容器3设置于导电图案13之上。电容器3的下表面电极21通过焊料22接合到导电图案13。电容器3的上表面电极23通过线材24与发光元件2的上表面电极19连接。此外，下表面电极21设置于电容器3的电介质的整个下表面，上表面电极23设置于整个上表面。
终端电阻4设置于次基台7的上表面，并连接在导电图案12与导电图案13之间。为了取得阻抗匹配，终端电阻4的电阻值被设定为50Ω。但是，也可以将终端电阻4的电阻值设定为50Ω以外的值。此外，线材14、16、20、24例如为金线材，但也可以为带状金线等。
导电图案13的俯视形状为长方形，电容器3的俯视形状为四边形。导电图案13的长边为550μm，比电容器3的边长。因此，导电图案13具有在从相对于次基台7的上表面垂直的方向观察的俯视观察时从电容器3的下方区域向外侧伸出的伸出部25。由此，通过从上方观察从电容器3溢出到伸出部25之上的焊料22，能够进行焊料22的外观检查。
另一方面，导电图案13的短边为290μm，比电容器3的边短。因此，在伸出部25与电容器3的边界，导电图案13的伸出部25的横向宽度比电容器3的横向宽度窄。
接着，将本实施方式的效果通过与比较例比较来进行说明。图5是表示比较例所涉及的光半导体装置的俯视图。在比较例中，导电图案13的短边为430μm，导电图案13比电容器3的宽度大。因此，导电图案13从电容器3的外周的四个边全部伸出。因此，能够进行焊料22的外观检查。但是，在比较例中，由于导电图案13大，所以次基台7的下表面侧的GND图案亦即导电图案9与上表面侧的导电图案13之间的寄生电容大。
另一方面，在本实施方式中，导电图案13的伸出部25的横向宽度比电容器3的横向宽度窄。由此，导电图案9与导电图案13之间的寄生电容减少。因此，光半导体装置的使用频率下的振幅响应扩大。因此，噪声减少而使信号的灵敏度变好，所以能够提高高频性能。
图6是表示信号的衰减量与频率的关系的模拟结果。在模拟中，将终端电阻4的电阻值设定为50Ω，将电容器3的电容设定为10nF。横轴表示输入到光半导体装置的信号的频率。纵轴表示在光半导体装置传递信号时衰减的量。例如，若纵轴的值为－3dB，则信号的强度成为一半。在比较例中，在光半导体装置的使用频率亦即10～20GHz附近存在滚降(roll-off)。另一方面，在本实施方式中，确认了即使在10～20GHz附近，衰减量也接近0dB，高频性能高。
另外，导电图案13的俯视形状为长方形，导电图案13的伸出部25从电容器3的对置的2个边伸出。这样，伸出部25优选为从电容器3的外周的2处以上伸出。由此，由于能够在2处以上的位置进行焊料22的外观检查，所以检查的可靠性高。
另外，在包含次基台7、导电图案13、发光元件2、电容器3以及终端电阻4的组存在多个的情况下，要求装置进一步的小型化。与此相对，在本实施方式中，导电图案13为长方形，伸出部25不从电容器3的与导电图案13的短边方向正交的边伸出。因此，能够在导电图案13的短边方向上减小各组的次基台7的宽度。因此，通过在导电图案13的短边方向上横向排列配置多组，能够使装置小型化。
实施方式2
图7是表示实施方式2所涉及的光半导体装置的俯视图。导电图案13的俯视形状为L字形，导电图案13的伸出部25从电容器3的邻接的2个边伸出。与实施方式1相同，在伸出部25与电容器3的边界，导电图案13的伸出部25的横向宽度比电容器3的横向宽度窄。由此，导电图案9与导电图案13之间的寄生电容减少，因此能够提高高频性能。
另外，由于伸出部25从电容器3的外周的2处伸出，所以能够在2处进行焊料22的外观检查。另外，通过将导电图案13设为L字形，能缩短次基台7的在图中的上下方向的长度。因此，能增加次基台7的共振频率，提高高频特性。其他结构以及效果与实施方式1相同。
实施方式3
图8是表示实施方式3所涉及的光半导体装置的俯视图。导电图案13的伸出部25为梳齿状。由此，伸出部25的面积变小，GND图案8与导电图案13之间的寄生电容减少，因此能够提高高频性能。但是，为了进行焊料22的外观检查，需要将各梳齿的横向宽度设为100μm以上。其他结构以及效果与实施方式1相同。
实施方式4
图9是表示实施方式4所涉及的光半导体装置的侧视图。图10是表示实施方式4所涉及的光半导体装置的设置于载体基板与次基台之间的导电图案的俯视图。在该俯视图中，省略次基台7以及其上的结构。
设置于载体基板6与次基台7之间的导电图案9、10，虽然存在于发光元件2的下方，但在电容器3的下方不存在。由于在发光元件2的下方，导电图案9、10相互接合，因此能够将在发光元件2产生的热向载体基板6侧散热。
在实施方式1中由于在电容器3的下方存在GND图案亦即导电图案9、10，因此存在导电图案13与导电图案9、10之间的寄生电容。与此相对，在本实施方式中，由于在电容器3的下方不存在导电图案9、10，因此能够加宽导电图案间隔，能够减少寄生电容。因此，与实施方式1相比，能够提高高频性能。其他结构以及效果与实施方式1相同。
附图标记说明
1...光半导体装置；2...发光元件；3...电容器；4...终端电阻；6...载体基板；7...次基台；8...导电图案(GND图案)；9...导电图案(GND图案、第2导电图案)；10...导电图案(第3导电图案)；13...导电图案(第1导电图案)；22...焊料；21...下表面电极；23...上表面电极；25...伸出部。

Claims (6)

1.一种光半导体装置，其特征在于，
所述光半导体装置具备：
次基台；
第1导电图案，设置于所述次基台的上表面；
GND图案，设置于所述次基台的下表面侧；
发光元件；
电容器，具有与所述第1导电图案通过焊料接合的下表面电极、和与所述发光元件连接的上表面电极；以及
终端电阻，与所述第1导电图案连接，
所述第1导电图案具有在俯视观察时从所述电容器伸出的伸出部，
所述伸出部的横向宽度比所述电容器的横向宽度窄，
所述伸出部从所述电容器的外周的2处以上的位置伸出，
所述下表面电极设置于所述电容器的电介质的整个下表面。
2.根据权利要求1所述的光半导体装置，其特征在于，
所述第1导电图案的俯视形状为长方形，
所述电容器的俯视形状为四边形，
所述第1导电图案的长边比所述电容器的边长，
所述第1导电图案的短边比所述电容器的边短，
所述伸出部从所述电容器的对置的2个边伸出。
3.根据权利要求2所述的光半导体装置，其特征在于，
存在多个包含所述次基台、所述第1导电图案、所述发光元件、所述电容器以及所述终端电阻的组，所述多个组在所述第1导电图案的所述短边的方向上横向排列配置。
4.根据权利要求1所述的光半导体装置，其特征在于，
所述第1导电图案的俯视形状为L字形，
所述电容器的俯视形状为四边形，
所述伸出部从所述电容器的邻接的2个边伸出。
5.根据权利要求1所述的光半导体装置，其特征在于，
所述伸出部为梳齿状。
6.一种光半导体装置，其特征在于，
所述光半导体装置具备：
次基台；
第1导电图案，设置于所述次基台的上表面；
GND图案，设置于所述次基台的下表面侧；
发光元件；
电容器，具有与所述第1导电图案通过焊料接合的下表面电极、和与所述发光元件连接的上表面电极；
终端电阻，与所述第1导电图案连接；
载体基板；
第2导电图案，设置于所述载体基板的上表面；以及
第3导电图案，设置于所述次基台的下表面，
所述第1导电图案具有在俯视观察时从所述电容器伸出的伸出部，
所述伸出部的横向宽度比所述电容器的横向宽度窄，
所述伸出部从所述电容器的外周的2处以上的位置伸出，
所述次基台设置于所述载体基板之上，
所述GND图案设置于所述载体基板的下表面，
所述第2导电图案与所述第3导电图案相互接合，且存在于所述发光元件的下方，但不存在于所述电容器的下方。
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CN101071808A (zh) * 2006-04-19 2007-11-14 日本光进株式会社 半导体元件安装基板和光发送模块
JP2011238858A (ja) * 2010-05-12 2011-11-24 Sumitomo Electric Ind Ltd 光半導体装置
CN107430293A (zh) * 2015-03-23 2017-12-01 日本电信电话株式会社 高频传输线路以及光电路
WO2018229978A1 (ja) * 2017-06-16 2018-12-20 三菱電機株式会社 プリント配線板
JP2019102827A (ja) * 2017-11-28 2019-06-24 京セラ株式会社 伝送回路、配線基板および高周波装置

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