JP6516214B2 - 多層膜用エッチング液とエッチング濃縮液およびエッチング方法 - Google Patents

多層膜用エッチング液とエッチング濃縮液およびエッチング方法 Download PDF

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Publication number
JP6516214B2
JP6516214B2 JP2015058223A JP2015058223A JP6516214B2 JP 6516214 B2 JP6516214 B2 JP 6516214B2 JP 2015058223 A JP2015058223 A JP 2015058223A JP 2015058223 A JP2015058223 A JP 2015058223A JP 6516214 B2 JP6516214 B2 JP 6516214B2
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Japan
Prior art keywords
etching
etching solution
acid
hydrogen peroxide
mass
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JP2015058223A
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English (en)
Japanese (ja)
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JP2016176126A5 (enExample
JP2016176126A (ja
Inventor
真 着能
真 着能
佑典 鬼頭
佑典 鬼頭
真一郎 淵上
真一郎 淵上
善秀 小佐野
善秀 小佐野
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Priority to JP2015058223A priority Critical patent/JP6516214B2/ja
Priority to CN201680001594.5A priority patent/CN106460197B/zh
Priority to PCT/JP2016/001462 priority patent/WO2016152091A1/ja
Priority to TW105108414A priority patent/TWI678413B/zh
Publication of JP2016176126A publication Critical patent/JP2016176126A/ja
Publication of JP2016176126A5 publication Critical patent/JP2016176126A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP2015058223A 2015-03-20 2015-03-20 多層膜用エッチング液とエッチング濃縮液およびエッチング方法 Active JP6516214B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015058223A JP6516214B2 (ja) 2015-03-20 2015-03-20 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
CN201680001594.5A CN106460197B (zh) 2015-03-20 2016-03-15 多层膜用蚀刻液和蚀刻浓缩液及蚀刻方法
PCT/JP2016/001462 WO2016152091A1 (ja) 2015-03-20 2016-03-15 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
TW105108414A TWI678413B (zh) 2015-03-20 2016-03-18 多層膜用蝕刻液與蝕刻濃縮液及蝕刻方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015058223A JP6516214B2 (ja) 2015-03-20 2015-03-20 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

Publications (3)

Publication Number Publication Date
JP2016176126A JP2016176126A (ja) 2016-10-06
JP2016176126A5 JP2016176126A5 (enExample) 2018-04-12
JP6516214B2 true JP6516214B2 (ja) 2019-05-22

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JP2015058223A Active JP6516214B2 (ja) 2015-03-20 2015-03-20 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

Country Status (4)

Country Link
JP (1) JP6516214B2 (enExample)
CN (1) CN106460197B (enExample)
TW (1) TWI678413B (enExample)
WO (1) WO2016152091A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022052909A (ja) * 2020-09-24 2022-04-05 パナソニックＩｐマネジメント株式会社 エッチング液

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* Cited by examiner, † Cited by third party
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JP6516214B2 (ja) * 2015-03-20 2019-05-22 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
CN108930037B (zh) * 2017-05-22 2021-02-26 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
CN107151795A (zh) * 2017-06-02 2017-09-12 苏州晶瑞化学股份有限公司 一种铜钼合金膜用蚀刻液
JP6822985B2 (ja) 2018-01-05 2021-01-27 フタバ産業株式会社 消音装置
KR20230075433A (ko) 2020-09-29 2023-05-31 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체기판 세정용 조성물 및 세정방법
KR20240021147A (ko) * 2021-02-24 2024-02-16 아이엠이씨 브이제트더블유 몰리브덴을 에칭하는 방법
CN114014771B (zh) * 2021-06-30 2023-12-12 安徽华恒生物科技股份有限公司 一种超高纯度的氨基酸及其制备方法和其应用
CN114318340B (zh) * 2021-12-22 2023-09-29 惠州达诚微电子材料有限公司 一种蚀刻液组合物及其制备方法
WO2024038697A1 (ja) * 2022-08-19 2024-02-22 株式会社Adeka 組成物、エッチング方法、及び積層体の製造方法

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JPS5286933A (en) * 1976-01-14 1977-07-20 Tokai Electro Chemical Co Method of treating surface of copper and copper alloy
KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
US20120319033A1 (en) * 2010-02-15 2012-12-20 Mitsubishi Gas Chemical Company, Inc. Etching solution for multilayer thin film having copper layer and molybdenum layer contained therein
US9365770B2 (en) * 2011-07-26 2016-06-14 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper/molybdenum-based multilayer thin film
JP2013091820A (ja) * 2011-10-24 2013-05-16 Kanto Chem Co Inc 銅層および／または銅合金層を含む金属膜用エッチング液組成物およびそれを用いたエッチング方法
KR101517013B1 (ko) * 2013-10-02 2015-05-04 주식회사 이엔에프테크놀로지 구리 및 몰리브덴 함유 막의 식각액 조성물
KR20150043569A (ko) * 2013-10-07 2015-04-23 주식회사 이엔에프테크놀로지 구리 및 몰리브덴 함유 막의 식각액 조성물
JP6128404B2 (ja) * 2013-11-25 2017-05-17 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
CN104498951B (zh) * 2014-12-11 2017-05-17 深圳新宙邦科技股份有限公司 一种双氧水系铜钼合金膜用蚀刻液
JP6516214B2 (ja) * 2015-03-20 2019-05-22 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022052909A (ja) * 2020-09-24 2022-04-05 パナソニックＩｐマネジメント株式会社 エッチング液
JP7595273B2 (ja) 2020-09-24 2024-12-06 パナソニックＩｐマネジメント株式会社 エッチング液

Also Published As

Publication number Publication date
WO2016152091A1 (ja) 2016-09-29
TWI678413B (zh) 2019-12-01
JP2016176126A (ja) 2016-10-06
TW201710470A (zh) 2017-03-16
CN106460197B (zh) 2019-02-22
CN106460197A (zh) 2017-02-22

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