TWI678413B - 多層膜用蝕刻液與蝕刻濃縮液及蝕刻方法 - Google Patents
多層膜用蝕刻液與蝕刻濃縮液及蝕刻方法 Download PDFInfo
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- TWI678413B TWI678413B TW105108414A TW105108414A TWI678413B TW I678413 B TWI678413 B TW I678413B TW 105108414 A TW105108414 A TW 105108414A TW 105108414 A TW105108414 A TW 105108414A TW I678413 B TWI678413 B TW I678413B
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- etching
- etching solution
- acid
- hydrogen peroxide
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- C—CHEMISTRY; METALLURGY
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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| CN108930037B (zh) * | 2017-05-22 | 2021-02-26 | 东友精细化工有限公司 | 金属膜蚀刻液组合物及利用其的导电图案形成方法 |
| CN107151795A (zh) * | 2017-06-02 | 2017-09-12 | 苏州晶瑞化学股份有限公司 | 一种铜钼合金膜用蚀刻液 |
| JP6822985B2 (ja) | 2018-01-05 | 2021-01-27 | フタバ産業株式会社 | 消音装置 |
| JP7595273B2 (ja) * | 2020-09-24 | 2024-12-06 | パナソニックＩｐマネジメント株式会社 | エッチング液 |
| KR20230075433A (ko) | 2020-09-29 | 2023-05-31 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 반도체기판 세정용 조성물 및 세정방법 |
| KR20240021147A (ko) * | 2021-02-24 | 2024-02-16 | 아이엠이씨 브이제트더블유 | 몰리브덴을 에칭하는 방법 |
| CN114014771B (zh) * | 2021-06-30 | 2023-12-12 | 安徽华恒生物科技股份有限公司 | 一种超高纯度的氨基酸及其制备方法和其应用 |
| CN114318340B (zh) * | 2021-12-22 | 2023-09-29 | 惠州达诚微电子材料有限公司 | 一种蚀刻液组合物及其制备方法 |
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| CN102762770A (zh) * | 2010-02-15 | 2012-10-31 | 三菱瓦斯化学株式会社 | 包含铜层及钼层的多层薄膜用蚀刻液 |
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| JPS5286933A (en) * | 1976-01-14 | 1977-07-20 | Tokai Electro Chemical Co | Method of treating surface of copper and copper alloy |
| KR100505328B1 (ko) * | 2002-12-12 | 2005-07-29 | 엘지.필립스 엘시디 주식회사 | 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법 |
| US9365770B2 (en) * | 2011-07-26 | 2016-06-14 | Mitsubishi Gas Chemical Company, Inc. | Etching solution for copper/molybdenum-based multilayer thin film |
| JP2013091820A (ja) * | 2011-10-24 | 2013-05-16 | Kanto Chem Co Inc | 銅層および／または銅合金層を含む金属膜用エッチング液組成物およびそれを用いたエッチング方法 |
| KR101517013B1 (ko) * | 2013-10-02 | 2015-05-04 | 주식회사 이엔에프테크놀로지 | 구리 및 몰리브덴 함유 막의 식각액 조성물 |
| KR20150043569A (ko) * | 2013-10-07 | 2015-04-23 | 주식회사 이엔에프테크놀로지 | 구리 및 몰리브덴 함유 막의 식각액 조성물 |
| JP6128404B2 (ja) * | 2013-11-25 | 2017-05-17 | パナソニックＩｐマネジメント株式会社 | 多層膜用エッチング液とエッチング濃縮液およびエッチング方法 |
| CN104498951B (zh) * | 2014-12-11 | 2017-05-17 | 深圳新宙邦科技股份有限公司 | 一种双氧水系铜钼合金膜用蚀刻液 |
| JP6516214B2 (ja) * | 2015-03-20 | 2019-05-22 | パナソニックＩｐマネジメント株式会社 | 多層膜用エッチング液とエッチング濃縮液およびエッチング方法 |
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2015
- 2015-03-20 JP JP2015058223A patent/JP6516214B2/ja active Active
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2016
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- 2016-03-15 WO PCT/JP2016/001462 patent/WO2016152091A1/ja not_active Ceased
- 2016-03-18 TW TW105108414A patent/TWI678413B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102762770A (zh) * | 2010-02-15 | 2012-10-31 | 三菱瓦斯化学株式会社 | 包含铜层及钼层的多层薄膜用蚀刻液 |
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| Publication number | Publication date |
|---|---|
| WO2016152091A1 (ja) | 2016-09-29 |
| JP2016176126A (ja) | 2016-10-06 |
| TW201710470A (zh) | 2017-03-16 |
| JP6516214B2 (ja) | 2019-05-22 |
| CN106460197B (zh) | 2019-02-22 |
| CN106460197A (zh) | 2017-02-22 |
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