CN106460197B - 多层膜用蚀刻液和蚀刻浓缩液及蚀刻方法 - Google Patents

多层膜用蚀刻液和蚀刻浓缩液及蚀刻方法 Download PDF

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Publication number
CN106460197B
CN106460197B CN201680001594.5A CN201680001594A CN106460197B CN 106460197 B CN106460197 B CN 106460197B CN 201680001594 A CN201680001594 A CN 201680001594A CN 106460197 B CN106460197 B CN 106460197B
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acid
etching solution
etching
hydrogen peroxide
mass
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CN106460197A (zh
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着能真
鬼头佑典
渊上真郎
渊上真一郎
小佐野善秀
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
CN201680001594.5A 2015-03-20 2016-03-15 多层膜用蚀刻液和蚀刻浓缩液及蚀刻方法 Active CN106460197B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-058223 2015-03-20
JP2015058223A JP6516214B2 (ja) 2015-03-20 2015-03-20 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
PCT/JP2016/001462 WO2016152091A1 (ja) 2015-03-20 2016-03-15 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

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CN106460197A CN106460197A (zh) 2017-02-22
CN106460197B true CN106460197B (zh) 2019-02-22

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JP (1) JP6516214B2 (enExample)
CN (1) CN106460197B (enExample)
TW (1) TWI678413B (enExample)
WO (1) WO2016152091A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6516214B2 (ja) * 2015-03-20 2019-05-22 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
CN108930037B (zh) * 2017-05-22 2021-02-26 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
CN107151795A (zh) * 2017-06-02 2017-09-12 苏州晶瑞化学股份有限公司 一种铜钼合金膜用蚀刻液
JP6822985B2 (ja) 2018-01-05 2021-01-27 フタバ産業株式会社 消音装置
JP7595273B2 (ja) * 2020-09-24 2024-12-06 パナソニックＩｐマネジメント株式会社 エッチング液
KR20230075433A (ko) 2020-09-29 2023-05-31 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체기판 세정용 조성물 및 세정방법
KR20240021147A (ko) * 2021-02-24 2024-02-16 아이엠이씨 브이제트더블유 몰리브덴을 에칭하는 방법
CN114014771B (zh) * 2021-06-30 2023-12-12 安徽华恒生物科技股份有限公司 一种超高纯度的氨基酸及其制备方法和其应用
CN114318340B (zh) * 2021-12-22 2023-09-29 惠州达诚微电子材料有限公司 一种蚀刻液组合物及其制备方法
WO2024038697A1 (ja) * 2022-08-19 2024-02-22 株式会社Adeka 組成物、エッチング方法、及び積層体の製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1510169A (zh) * 2002-12-12 2004-07-07 Lg.菲利浦Lcd株式会社 用于多层铜和钼的蚀刻溶液及使用该蚀刻溶液的蚀刻方法
CN102762770A (zh) * 2010-02-15 2012-10-31 三菱瓦斯化学株式会社 包含铜层及钼层的多层薄膜用蚀刻液
CN103060810A (zh) * 2011-10-24 2013-04-24 关东化学株式会社 含有铜层和/或铜合金层的金属膜用蚀刻液组合物及使用该蚀刻液组合物的蚀刻方法
CN103717787A (zh) * 2011-07-26 2014-04-09 三菱瓦斯化学株式会社 铜/钼系多层薄膜用蚀刻液
CN104498951A (zh) * 2014-12-11 2015-04-08 深圳新宙邦科技股份有限公司 一种双氧水系铜钼合金膜用蚀刻液
CN104513981A (zh) * 2013-10-02 2015-04-15 易安爱富科技有限公司 铜及钼含有膜的蚀刻液组合物
CN104513983A (zh) * 2013-10-07 2015-04-15 易安爱富科技有限公司 铜及钼含有膜的蚀刻液组合物
CN105765107A (zh) * 2013-11-25 2016-07-13 松下知识产权经营株式会社 多层膜用蚀刻液和蚀刻浓缩液及蚀刻方法
JP2016176126A (ja) * 2015-03-20 2016-10-06 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286933A (en) * 1976-01-14 1977-07-20 Tokai Electro Chemical Co Method of treating surface of copper and copper alloy

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1510169A (zh) * 2002-12-12 2004-07-07 Lg.菲利浦Lcd株式会社 用于多层铜和钼的蚀刻溶液及使用该蚀刻溶液的蚀刻方法
CN102762770A (zh) * 2010-02-15 2012-10-31 三菱瓦斯化学株式会社 包含铜层及钼层的多层薄膜用蚀刻液
CN103717787A (zh) * 2011-07-26 2014-04-09 三菱瓦斯化学株式会社 铜/钼系多层薄膜用蚀刻液
CN103060810A (zh) * 2011-10-24 2013-04-24 关东化学株式会社 含有铜层和/或铜合金层的金属膜用蚀刻液组合物及使用该蚀刻液组合物的蚀刻方法
CN104513981A (zh) * 2013-10-02 2015-04-15 易安爱富科技有限公司 铜及钼含有膜的蚀刻液组合物
CN104513983A (zh) * 2013-10-07 2015-04-15 易安爱富科技有限公司 铜及钼含有膜的蚀刻液组合物
CN105765107A (zh) * 2013-11-25 2016-07-13 松下知识产权经营株式会社 多层膜用蚀刻液和蚀刻浓缩液及蚀刻方法
CN104498951A (zh) * 2014-12-11 2015-04-08 深圳新宙邦科技股份有限公司 一种双氧水系铜钼合金膜用蚀刻液
JP2016176126A (ja) * 2015-03-20 2016-10-06 パナソニックＩｐマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法

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Publication number Publication date
WO2016152091A1 (ja) 2016-09-29
TWI678413B (zh) 2019-12-01
JP2016176126A (ja) 2016-10-06
TW201710470A (zh) 2017-03-16
JP6516214B2 (ja) 2019-05-22
CN106460197A (zh) 2017-02-22

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