CN111621369A - 高端集成电路板用中性环保水基清洗剂及其制备方法 - Google Patents
高端集成电路板用中性环保水基清洗剂及其制备方法 Download PDFInfo
- Publication number
- CN111621369A CN111621369A CN202010528857.6A CN202010528857A CN111621369A CN 111621369 A CN111621369 A CN 111621369A CN 202010528857 A CN202010528857 A CN 202010528857A CN 111621369 A CN111621369 A CN 111621369A
- Authority
- CN
- China
- Prior art keywords
- cleaning agent
- integrated circuit
- circuit board
- end integrated
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 96
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 230000007935 neutral effect Effects 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims description 9
- 239000004094 surface-active agent Substances 0.000 claims abstract description 70
- 239000000203 mixture Substances 0.000 claims abstract description 35
- 238000005260 corrosion Methods 0.000 claims abstract description 24
- 230000007797 corrosion Effects 0.000 claims abstract description 24
- 239000003112 inhibitor Substances 0.000 claims abstract description 21
- 239000002738 chelating agent Substances 0.000 claims abstract description 19
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims abstract description 12
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 claims abstract description 9
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 claims abstract description 8
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims abstract description 8
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims abstract description 8
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims abstract description 8
- 239000000176 sodium gluconate Substances 0.000 claims abstract description 8
- 235000012207 sodium gluconate Nutrition 0.000 claims abstract description 8
- 229940005574 sodium gluconate Drugs 0.000 claims abstract description 8
- ODTWZWKAOGPVOT-UHFFFAOYSA-N 4-dodecanoyl-1-(2-hydroxyethyl)-4,5-dihydroimidazole-2-sulfonic acid Chemical compound C(CCCCCCCCCCC)(=O)C1N=C(N(C1)CCO)S(=O)(=O)O ODTWZWKAOGPVOT-UHFFFAOYSA-N 0.000 claims abstract description 7
- BEGBSFPALGFMJI-UHFFFAOYSA-N ethene;sodium Chemical group [Na].C=C BEGBSFPALGFMJI-UHFFFAOYSA-N 0.000 claims abstract description 7
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical group CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims abstract description 7
- 239000001509 sodium citrate Substances 0.000 claims abstract description 7
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims abstract description 7
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims abstract description 6
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims abstract description 6
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000005642 Oleic acid Substances 0.000 claims abstract description 6
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000012964 benzotriazole Substances 0.000 claims abstract description 6
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010452 phosphate Substances 0.000 claims abstract description 6
- 235000013905 glycine and its sodium salt Nutrition 0.000 claims abstract description 3
- 239000004247 glycine and its sodium salt Substances 0.000 claims abstract description 3
- 229940029258 sodium glycinate Drugs 0.000 claims abstract description 3
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 36
- 230000003381 solubilizing effect Effects 0.000 claims description 29
- 229910052711 selenium Inorganic materials 0.000 claims description 25
- 239000011669 selenium Substances 0.000 claims description 25
- 239000011573 trace mineral Substances 0.000 claims description 24
- 235000013619 trace mineral Nutrition 0.000 claims description 24
- -1 dodecyl benzyl betaine Chemical compound 0.000 claims description 22
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 claims description 20
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 229960003237 betaine Drugs 0.000 claims description 20
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 16
- 229910000058 selane Inorganic materials 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 9
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 8
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 8
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 8
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 8
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 8
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 8
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 7
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 7
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 7
- DVEKCXOJTLDBFE-UHFFFAOYSA-N n-dodecyl-n,n-dimethylglycinate Chemical compound CCCCCCCCCCCC[N+](C)(C)CC([O-])=O DVEKCXOJTLDBFE-UHFFFAOYSA-N 0.000 claims description 7
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- 150000001408 amides Chemical class 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 claims description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 125000003172 aldehyde group Chemical group 0.000 claims description 2
- 230000001804 emulsifying effect Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 description 24
- 239000000126 substance Substances 0.000 description 15
- 239000000047 product Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 229910001385 heavy metal Inorganic materials 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 238000004377 microelectronic Methods 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 239000003002 pH adjusting agent Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000003709 fluoroalkyl group Chemical group 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011538 cleaning material Substances 0.000 description 3
- 238000004945 emulsification Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- 125000006539 C12 alkyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- KHJWSKNOMFJTDN-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KHJWSKNOMFJTDN-UHFFFAOYSA-N 0.000 description 1
- UXYAJXBVMZFRMS-UHFFFAOYSA-N 2-hydroxy-1,3,2$l^{5}-dioxaphosphepane 2-oxide Chemical compound OP1(=O)OCCCCO1 UXYAJXBVMZFRMS-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006065 biodegradation reaction Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000008233 hard water Substances 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/88—Ampholytes; Electroneutral compounds
- C11D1/94—Mixtures with anionic, cationic or non-ionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0047—Other compounding ingredients characterised by their effect pH regulated compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/10—Carbonates ; Bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/12—Water-insoluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/12—Water-insoluble compounds
- C11D3/124—Silicon containing, e.g. silica, silex, quartz or glass beads
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/364—Organic compounds containing phosphorus containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/004—Surface-active compounds containing F
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/52—Carboxylic amides, alkylolamides or imides or their condensation products with alkylene oxides
- C11D1/526—Carboxylic amides (R1-CO-NR2R3), where R1, R2 or R3 are polyalkoxylated
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/88—Ampholytes; Electroneutral compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/88—Ampholytes; Electroneutral compounds
- C11D1/90—Betaines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明公开了高端集成电路板用中性环保水基清洗剂，按质量份数计，包括以下组分：
Description
【技术领域】
本发明涉及高端集成电路板清洗技术领域，具体涉及一种高端集成电路板用中性环保水基清洗剂及其制备方法。
【背景技术】
随着人命生活水平的提高，人们对于电子工业产品的需求不断增大。同时，对于电子工业产品各方面的要求也越来越高。在微电子集成电路板制造领域的清洗应用过程中，安全和环保是至关重要的课题，如果集成电路板失效将直接带来人们的生命和财产安全，这无疑对微电子集成线路板清洗的可靠性提出更高要求。
当前，微电子集成线路板的清洗材料已经形成无卤、环保、功能化的多个发展方向，在清洗产品的性价比上向质量可靠、成本低廉的方向发展。这种发展的趋势对电子清洗材料产品的质量和制造技术水平的要求将更为严格和苛刻。环保水基清洗剂作为近年发展起来的电子清洗材料，普通的环保水基清洗剂与国外的产品相比并不逊色，但在更精细化的产品及高端微电子集成电路板清洗用环保水基清洗剂等高端应用领域，与国外产品相比仍有相当的差距，存在碱性清洗剂队名赶材料腐蚀、清洗后助焊剂残留物去除不彻底、清洗剂回收利用难、清洗剂使用寿命短、产品应用窗口窄等问题。
因此，有必要研发一种清洗剂使用寿命较长、产品应用窗口较宽的高端集成电路板用中性环保水基清洗剂。
【发明内容】
本发明提供一种高端集成电路板用中性环保水基清洗剂，解决现有的清洗剂存在的使用寿命短、产品应用窗口窄的问题。
为解决上述问题，本发明提供技术方案如下：高端集成电路板用中性环保水基清洗剂，按质量份数计，包括以下组分：
所述螯合剂为乙二胺四乙酸二钠、乙二胺四乙酸四钠、乙二胺四甲叉磷酸钠、柠檬酸钠、葡萄糖酸钠中的一种或几种的混合物；
所述缓蚀剂为苯骈三氮唑、甲基苯并三氮唑、巯基苯并噻唑、月桂酰基-磺酸基-N-羟乙基咪唑啉、十六烷胺、十八烷基-N-磺酸基-N-羟乙基咪唑啉、油酸基-N-磺酸基-N-羟乙基咪唑啉、N-烷基甘氨酸钠中至少两种的混合物；
所述表面活性剂包括助溶型表面活性剂，所述助溶型表面活性剂的一端为亲油基团，所述助溶型表面活性剂的另一端为亲水基团。
所述亲油基团包括烃基或烷氧基，所述亲水基包括羟基、醛基、氨基、羧基中的一种或几种，通过有目的的引入羟基、烷氧基等活性基团，使清洗剂对高端集成电路板基材的亲水性和活性都得到提高，以实现高效的清洗。
所述助溶型表面活性剂是包括十二烷基甜菜碱、十二烷基苄基甜菜碱、а-十四烷基三甲基甜菜碱、C12～C14羟乙基磺酸甜菜碱、2-烷基-N-羧甲基-N’-羟乙基咪唑啉、2-烷基-N-羧甲基-N-羟乙基咪唑啉、十二烷基四乙氧基聚氧乙烯醚、十二碳醇、辛基酚、聚氧乙烯酰胺、磺酸盐型碳氟表面活性剂等至少三种的混合物，所述2-烷基-N-羧甲基-N’-羟乙基咪唑啉和所述2-烷基-N-羧甲基-N-羟乙基咪唑啉中的烷基为C12～C16烷基。所述2-烷基-N-羧甲基-N’-羟乙基咪唑啉、2-烷基-N-羧甲基-N-羟乙基咪唑啉为咪唑啉型表面活性剂，具有极好的生物降解性能，能迅速完全的降解，无公害产生，环保安全。所述二烷基甜菜碱、十二烷基苄基甜菜碱、а-十四烷基三甲基甜菜碱、C12～C14羟乙基磺酸甜菜碱为甜菜碱型表面活性剂，具有较好的耐硬水性和耐高浓度电解质性，可以吸附在带有正电荷或负电荷的物质表面上，而不产生憎水薄层，具有良好的润湿性和发泡性，因而能够润湿高端集成电路板基材的表面，对助焊剂焊接后的残留物进行很好的润湿，进而通过其他表面活性剂的乳化、发泡性将基材上残留的有机物或者金属离子除去。并通过上述各种表面活性剂的协同增效作用，增强清洗剂对于高端集成电路板表面或缝隙间的杂质的清洗能力。
作为本申请的优选方案，所述助溶型表面活性剂包括十二烷基甜菜碱、2-烷基-N-羧甲基-N’-羟乙基咪唑啉、2-烷基-N-羧甲基-N-羟乙基咪唑啉、十二烷基四乙氧基聚氧乙烯醚、磺酸盐型碳氟表面活性剂的混合物。
所述PH调节剂是包括碳酸钠、碳酸氢钠、一乙醇胺、二乙醇胺中的一种或几种的混合物，PH调节剂用于调节清洗剂的PH为中性即PH＝6～8，PH调节级的量在此并不做限定，当清洗剂的PH调节至中性即可。另外，碳酸氢钠不仅用于调节清洗剂的PH值，还具有缓冲清洗剂的PH之变化的作用，防止高端集成电路板在制程中可能携带的酸性或碱性物质造成清洗剂PH变化较大的作用。
所述高端集成电路板用中性环保水基清洗剂还包括0.1-0.8份的微量元素，通过微量元素的添加，提高清洗剂的清洗性能和稳定性。
所述微量元素包括硅、硒、碳中的一种或几种，所述微量元素硒以硒化氢和/或硒单质的形式存在，所述碳以活性炭的形式存在，具体的，通过硅、碳的吸附性吸附高端集成电路板上的有机物来达到清洗的目的，另硅和碳在中性的清洗剂中不会发生反应，能够保持清洗剂的稳定。通过硒元素与高端集成电路板上的金属反应或者形成沉淀物以除去氧化的金属或者重金属离子，达到清洗金属表面的油污或者氧化物的目的。
本发明还提供一种上述的高端集成电路板用中性环保水基清洗剂的制备方法，包括以下步骤：
S1、按比例向反应釜中加入所述去离子水，在室温下(20～35℃)下边搅拌边依次加入所述表面活性剂、所述螯合剂、所述缓蚀剂，以及和/或所述微量元素，真空乳化并真空搅拌20～45分钟至所述组分均匀混合，形成混合液；
S2、向完成所述步骤S1的混合液中边搅拌边加入所述PH调节剂以调节所述混合液的PH至中性，即制得高端集成电路板用中性环保水基清洗剂，所述PH的范围为6.0～8.0。
所述步骤S1中的转速为150～280转/分钟。
所述步骤S2的搅拌速度为60～180转/分钟。
与现有技术相比，本发明具有以下优点：
1、本发明的高端集成电路板用中性环保水基清洗剂，通过助溶型表面活性剂的亲水性基团和亲油性(憎水)基团来改善清洗剂的亲水、亲油性，使清洗剂对于高端集成电路板基材的亲水性和活性都得到很好的提高，能够更好地与高端集成电路板表面或缝隙间的焊接残留物接触，进而润湿、乳化残留物并使其脱离高端电子电路板的表面或缝隙进入清洗剂中，增强了清洗剂的清洗能力，提高清洗剂的使用寿命；通过缓蚀剂在敏感金属材料的表面形成阻碍腐蚀性物质与敏感金属接触的缓蚀剂分子层，保护敏感性金属不被腐蚀或者有效地降低、减缓腐蚀速率；通过螯合剂除去高端集成电路板表面残留的重金属离子；解决了现有的清洗剂使用寿命短、清洗后助焊剂残留物去除不彻底的问题；
2、本发明的高端集成电路板用中性环保水基清洗剂，通过包括多种类型的具有协同增效作用的助溶型表面活性剂，来清洗各种高端集成电路板上的焊接残留物，使得清洗剂能够适应于多种高端集成电路板，解决现有的清洗剂存在的应用窗口较窄的问题；
3、本发明的高端集成电路板用中性环保水基清洗剂，通过微量元素的添加，使得清洗剂能够通过硅和碳(碳以活性炭的形式存在)来吸附高端集成电路板上的有机物，另外硅和碳的性质稳定，不会与清洗剂中的其他物质发生反应；通过硒与高端集成电路板上的金属进行化合反应除去残留的金属，通过硒化氢除去溶解于清洗剂中的重金属离子，硒化氢与重金属离子沉淀微微里的硒化物；这样就提高清洗剂的清洗能力的同时还可以保持清洗剂的稳定性。
本发明的高端集成电路板用中性环保水基清洗剂的制备方法，通过真空乳化、真空搅拌等创新手段制备出的高端集成电路板用中性环保水基清洗剂，满足电子信息产品等微电子高端集成电路板清洗领域用的高精密度和高可靠性的清洗需求。
【具体实施方式】
下面将结合本发明的实施例，对本发明的技术方案进行清楚、完整的描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明的保护范围。
实施例1：本实施例提供一种高端集成电路板用中性环保水基清洗剂，按质量份数计，包括以下组分：
6份表面活性剂，所述表面活性剂包括助溶型表面活性剂，所述助溶型表面活性剂的一端为亲油基团，所述助溶型表面活性剂的另一端为亲水基团，在本实施例中亲油基团为烷基、聚氧乙烯基、氟代烷基，所述亲水基团为羧基、磺酸基、羟基。所述助溶型表面活性剂是包括2份十二烷基甜菜碱、1份2-烷基-N-羧甲基-N’-羟乙基咪唑啉、1份十二碳醇、1份聚氧乙烯酰胺、1份磺酸盐型碳氟表面活性剂的混合物，所述2-烷基-N-羧甲基-N’-羟乙基咪唑啉中的烷基为C12烷基。
1份螯合剂，所述螯合剂为0.25份乙二胺四乙酸二钠、0.25份乙二胺四乙酸四钠、0.25份柠檬酸钠、0.25份葡萄糖酸钠中的混合物。0.3份缓蚀剂，所述缓蚀剂为0.1份苯骈三氮唑、0.1份月桂酰基-磺酸基-N-羟乙基咪唑啉、0.1份N-烷基甘氨酸钠的混合物。适量PH调节剂，所述PH调节剂是包括0.1份碳酸钠、0.2份碳酸氢钠、0.1份一乙醇胺的混合物。75份去离子水。
实施例2：本实施例提供一种高端集成电路板用中性环保水基清洗剂，按质量份数计，包括以下组分：
7份表面活性剂，所述表面活性剂包括助溶型表面活性剂，所述助溶型表面活性剂的一端为亲油基团，所述助溶型表面活性剂的另一端为亲水基团。在本实施例中，所述亲油基团包括烷基、烷氧基、氟代烷基，所述亲水基包括羟基、磺酸基、醚基、羧基中。所述助溶型表面活性剂包括3份十二烷基甜菜碱、1份2-烷基-N-羧甲基-N’-羟乙基咪唑啉、1份2-烷基-N-羧甲基-N-羟乙基咪唑啉、1份十二烷基四乙氧基聚氧乙烯醚、1份磺酸盐型碳氟表面活性剂的混合物，所述2-烷基-N-羧甲基-N’-羟乙基咪唑啉和所述2-烷基-N-羧甲基-N-羟乙基咪唑啉中的烷基为C12烷基。
2份螯合剂，所述螯合剂为0.5份乙二胺四乙酸二钠、0.5份乙二胺四乙酸四钠、0.25份乙二胺四甲叉磷酸钠、0.5份柠檬酸钠、0.25份葡萄糖酸钠的混合物。0.5份缓蚀剂，所述缓蚀剂为0.1份甲基苯并三氮唑、0.1份巯基苯并噻唑、0.1份十六烷胺、0.1份十八烷基-N-磺酸基-N-羟乙基咪唑啉、0.1份油酸基-N-磺酸基-N-羟乙基咪唑啉的混合物。适量PH调节剂，所述PH调节剂是包括0.2份碳酸钠、0.33份碳酸氢钠、0.2份二乙醇胺的混合物。0.2份微量元素，所述微量元素包括0.15份硅和0.05份硒，所述微量元素硒在本实施例中以硒化氢的形式存在。78份去离子水。
实施例3：本实施例提供一种高端集成电路板用中性环保水基清洗剂，按质量份数计，包括以下组分：
8份表面活性剂，所述表面活性剂包括助溶型表面活性剂，所述助溶型表面活性剂的一端为亲油基团，所述助溶型表面活性剂的另一端为亲水基团。在本实施例中，所述亲油基团包括烷基、烷氧基、聚氧乙烯基，所述亲水基包括羟基、醛基、醚基、氨基、羧基。所述助溶型表面活性剂是包括2份十二烷基苄基甜菜碱、1份а-十四烷基三甲基甜菜碱、1份C12～C14羟乙基磺酸甜菜碱、1份2-烷基-N-羧甲基-N-羟乙基咪唑啉、1份十二烷基四乙氧基聚氧乙烯醚、1份辛基酚、1份聚氧乙烯酰胺的混合物，所述2-烷基-N-羧甲基-N-羟乙基咪唑啉中的烷基为C13烷基。
4份螯合剂，所述螯合剂为1份乙二胺四乙酸二钠、1.5份乙二胺四乙酸四钠、0.5份乙二胺四甲叉磷酸钠、1份葡萄糖酸钠的混合物。0.9份缓蚀剂，所述缓蚀剂为0.2份甲基苯并三氮唑、0.2份巯基苯并噻唑、0.1份月桂酰基-磺酸基-N-羟乙基咪唑啉、0.1份十六烷胺、0.1份十八烷基-N-磺酸基-N-羟乙基咪唑啉、0.2份N-烷基甘氨酸钠的混合物。适量PH调节剂，所述PH调节剂是包括0.2份碳酸钠、0.2份碳酸氢钠、0.1份一乙醇胺、0.2份二乙醇胺中的混合物。0.3份微量元素，所述微量元素包括0.1份硅、0.1份硒、0.1份碳，所述微量元素硒以硒化氢和硒单质的形式存在，硒化氢和硒单质的质量比为1:1，所述碳以活性炭的形式存在。85份去离子水。
实施例4：本实施例提供一种高端集成电路板用中性环保水基清洗剂，按质量份数计，包括以下组分：
9份表面活性剂，所述表面活性剂包括助溶型表面活性剂，所述助溶型表面活性剂的一端为亲油基团，另一端为亲水基团，在本实施例中，所述亲油基团为烷基，所述亲水基包括酚羟基、醚基、羧基。所述助溶型表面活性剂是包括1份十二烷基苄基甜菜碱、2份а-十四烷基三甲基甜菜碱、2份C12～C14羟乙基磺酸甜菜碱、2份十二烷基四乙氧基聚氧乙烯醚、2份辛基酚的混合物。
5份螯合剂，所述螯合剂为2份乙二胺四乙酸四钠、1份乙二胺四甲叉磷酸钠、2份葡萄糖酸钠的混合物。1.2份缓蚀剂，所述缓蚀剂为0.2份苯骈三氮唑、0.3份月桂酰基-磺酸基-N-羟乙基咪唑啉、0.2份十六烷胺、0.2份油酸基-N-磺酸基-N-羟乙基咪唑啉、0.3份N-烷基甘氨酸钠的混合物。适量PH调节剂，所述PH调节剂是包括0.3份碳酸钠、0.2份碳酸氢钠、0.2份一乙醇胺、0.1份二乙醇胺中的混合物。0.5份微量元素，所述微量元素包括0.2份硅、0.15份硒、0.15份碳，所述微量元素硒以硒化氢和硒单质的形式存在，所述硒化氢和所述硒单质的质量比为2:1，所述碳以活性炭的形式存在。93份去离子水。
实施例5：本实施例提供一种高端集成电路板用中性环保水基清洗剂，按质量份数计，包括以下组分：
10份表面活性，所述表面活性剂包括助溶型表面活性剂，所述助溶型表面活性剂的一端为亲油基团，另一端为亲水基团。在本实施例中，所述亲油基团包括烷基、聚氧乙烯基、氟代烷基，所述亲水基包括羟基、醚基、氨基、羧基。所述助溶型表面活性剂是包括1份十二烷基甜菜碱、1份C12～C14羟乙基磺酸甜菜碱、2份2-烷基-N-羧甲基-N’-羟乙基咪唑啉、2份十二碳醇、2份聚氧乙烯酰胺、2份磺酸盐型碳氟表面活性剂的混合物，所述2-烷基-N-羧甲基-N’-羟乙基咪唑啉中的烷基为C16烷基。
6份螯合剂，所述螯合剂为3份乙二胺四乙酸二钠、1份乙二胺四乙酸四钠、0.5份乙二胺四甲叉磷酸钠、1.5份柠檬酸钠的混合物。1.5份缓蚀剂，所述缓蚀剂为0.3份苯骈三氮唑、0.3份巯基苯并噻唑、0.5份十六烷胺、0.3份十八烷基-N-磺酸基-N-羟乙基咪唑啉、0.3份油酸基-N-磺酸基-N-羟乙基咪唑啉的混合物。适量PH调节剂，所述PH调节剂是包括0.2份碳酸钠、0.4份碳酸氢钠、0.2份一乙醇胺、0.1份二乙醇胺的混合物。0.6份的微量元素，所述微量元素包括0.1份硅、0.2份硒、0.3份碳，所述微量元素硒以硒化氢和/或硒单质的形式存在，所述硒化氢和所述硒单质的质量比为1:1，所述碳以活性炭的形式存在。105份去离子水。
实施例6：本实施例提供一种高端集成电路板用中性环保水基清洗剂，按质量份数计，包括以下组分：
11份表面活性剂，所述表面活性剂包括助溶型表面活性剂，所述助溶型表面活性剂的一端为亲油基团，另一端为亲水基团。在本实施例中，所述亲油基团包括烷基、氟代烷基，所述亲水基包括羟基、醚基、磺酸基、羧基。所述助溶型表面活性剂是包括3份十二烷基苄基甜菜碱、1份а-十四烷基三甲基甜菜碱、2份2-烷基-N-羧甲基-N-羟乙基咪唑啉、1份十二烷基四乙氧基聚氧乙烯醚、1份辛基酚、3份磺酸盐型碳氟表面活性剂的混合物，所述2-烷基-N-羧甲基-N-羟乙基咪唑啉中的烷基为C15烷基。
7份螯合剂，所述螯合剂为2份乙二胺四乙酸二钠、1份乙二胺四乙酸四钠、2份乙二胺四甲叉磷酸钠、1.5份柠檬酸钠、0.5份葡萄糖酸钠的混合物。1.6份缓蚀剂，所述缓蚀剂为0.3份甲基苯并三氮唑、0.4份月桂酰基-磺酸基-N-羟乙基咪唑啉、0.1份十六烷胺、0.2份十八烷基-N-磺酸基-N-羟乙基咪唑啉、0.2份油酸基-N-磺酸基-N-羟乙基咪唑啉、0.4份N-烷基甘氨酸钠的混合物。PH调节剂，所述PH调节剂是包括0.3份碳酸钠、0.43份碳酸氢钠、0.3份一乙醇胺、0.2份二乙醇胺的混合物。0.8份的微量元素，所述微量元素包括0.2份硅、0.4份硒、0.2份碳，所述微量元素硒以硒化氢和/或硒单质的形式存在，所述硒化氢与所述硒单质的质量比为3:1，所述碳以活性炭的形式存在。116份去离子水。
将上述实施例1-6的高端集成电路板用中性环保水基清洗剂的组分汇总到表1中。
表1：实施例1-6高端集成电路板用中性环保水基清洗剂的组分配比表
表1中的数据均为质量份数，根据表1的组分配比，按照本发明的高端集成电路板用中性环保水基清洗剂的制备方法制备出实施例1-6的高端集成电路板用中性环保水基清洗剂，并检测本发明各实施例和对比例1-4的清洗剂对不同工艺生产的完成电子元器件焊接步骤的高端集成电路板的清洗性能。本申请选取中国发明专利一种用于印刷线路板的环保水基清洗剂(专利公告号为：CN105695126B)的实施例3和实施例4作为对比例1和对比例2，选取中国发明专利绿色环保中性水剂清洗剂及制备方法和应用(专利公告号为：CN10533147B)的实施例3和实施例4作为对比例3和对比例4。清洗性能包括离子污染度测试(按照IPC-TM-6502.36标准测试)、助焊剂有机物残留检测(用显微镜或自动光学检测机观察集成电路板表面是否有助焊剂有机物残留)。并将测试结果如实记录于表2中。
表2：实施例1-6的高端集成电路板用中性环保水基清洗剂和对比例1-4的清洗剂对不同线路板的清洗性能表
由表2可以看出本申请的实施例1-6的高端集成电路板用中性环保水基清洗剂对各种高端集成电路板的清洗效果均显著优于对比例的清洗剂，离子污染度测试的结果基本在3～11μgNaCl/cm3之间，低于国家标准规定的允许值(≦20μgNaCl/cm3)，能够有效地清洗不同工艺生产的高端集成电路板，拓宽了本发明的高端集成电路板用中性环保水基清洗剂的应用窗口。而且对于相同件数的高端集成电路板，清洗剂的使用寿命提高一到两倍，如附表2所示，本发明实施例1-6单位体积相同浓度的高端集成电路板用中性环保水基清洗剂的水溶液，能够清洗的高端集成电路板数量相比其他清洗剂的清洗的高端集成电路板的数量明显增多，有效地解决了现有的清洗剂存在的使用寿命短、产品应用窗口窄的问题。
本发明的高端集成电路板用中性环保水基清洗剂，通过助溶型表面活性剂的亲水性基团和憎水基团来改善清洗剂的亲水性，使清洗剂对于高端集成电路板的亲水性和活性都得到很好的提高，能够更好地与高端集成电路板表面或缝隙间的焊接残留物接触，进而润湿、乳化残留物并使其脱离高端电子电路板的表面或缝隙进入清洗剂中，增强了清洗剂的清洗能力，提高清洗剂的使用寿命；通过缓蚀剂在敏感金属材料的表面形成阻碍腐蚀性物质与敏感金属接触的缓蚀剂分子层，保护敏感性金属不被腐蚀或者有效地降低、减缓腐蚀速率；通过螯合剂除去高端集成电路板表面残留的重金属离子；解决了现有的清洗剂使用寿命短、清洗后助焊剂残留物去除不彻底的问题；通过包括多种类型的助溶型表面活性剂来清洗各种高端集成电路板上的焊接残留物，使得清洗剂能够适应于多种高端集成电路板，解决现有的清洗剂存在的应用窗口较窄的问题；通过微量元素的添加，使得清洗剂能够通过硅和碳(碳以活性炭的形式存在)来吸附高端集成电路板上的有机物，另外硅和碳的性质稳定，不会与清洗剂中的其他物质发生反应；通过硒与高端集成电路板上的金属进行化合反应除去残留的金属，通过硒化氢除去溶解于清洗剂中的重金属离子，硒化氢与重金属离子沉淀微微里的硒化物；这样就提高清洗剂的清洗能力的同时还可以保持清洗剂的稳定性。
本发明的高端集成电路板用中性环保水基清洗剂的制备方法，通过真空乳化、真空搅拌等创新手段制备出的高端集成电路板用中性环保水基清洗剂，满足电子信息产品等微电子高端集成电路板清洗领域用的高精密度和高可靠性的清洗需求。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (10)
1.高端集成电路板用中性环保水基清洗剂，其特征在于，按质量份数计，包括以下组分：
所述螯合剂为乙二胺四乙酸二钠、乙二胺四乙酸四钠、乙二胺四甲叉磷酸钠、柠檬酸钠、葡萄糖酸钠中的一种或几种的混合物；
所述缓蚀剂为苯骈三氮唑、甲基苯并三氮唑、巯基苯并噻唑、月桂酰基-磺酸基-N-羟乙基咪唑啉、十六烷胺、十八烷基-N-磺酸基-N-羟乙基咪唑啉、油酸基-N-磺酸基-N-羟乙基咪唑啉、N-烷基甘氨酸钠中至少两种的混合物；
所述表面活性剂包括助溶型表面活性剂，所述助溶型表面活性剂的一端为亲油基团，所述助溶型表面活性剂的另一端为亲水基团。
2.根据权利要求1所述的高端集成电路板用中性环保水基清洗剂，其特征在于：所述亲油基团包括烃基或烷氧基，所述亲水基包括羟基、醛基、氨基、羧基中的一种或几种。
3.根据权利要求2所述的高端集成电路板用中性环保水基清洗剂，其特征在于：所述助溶型表面活性剂是包括十二烷基甜菜碱、十二烷基苄基甜菜碱、а-十四烷基三甲基甜菜碱、C12～C14羟乙基磺酸甜菜碱、2-烷基-N-羧甲基-N’-羟乙基咪唑啉、2-烷基-N-羧甲基-N-羟乙基咪唑啉、十二烷基四乙氧基聚氧乙烯醚、十二碳醇、辛基酚、聚氧乙烯酰胺、磺酸盐型碳氟表面活性剂等至少三种的混合物，所述2-烷基-N-羧甲基-N’-羟乙基咪唑啉和所述2-烷基-N-羧甲基-N-羟乙基咪唑啉中的烷基为C12～C16烷基。
4.根据权利要求1所述的高端集成电路板用中性环保水基清洗剂，其特征在于：所述助溶型表面活性剂包括十二烷基甜菜碱、2-烷基-N-羧甲基-N’-羟乙基咪唑啉、2-烷基-N-羧甲基-N-羟乙基咪唑啉、十二烷基四乙氧基聚氧乙烯醚、磺酸盐型碳氟表面活性剂的混合物。
5.根据权利要求1所述的高端集成电路板用中性环保水基清洗剂，其特征在于：所述PH调节剂是包括碳酸钠、碳酸氢钠、一乙醇胺、二乙醇胺中的一种或几种的混合物。
6.根据权利要求1所述的高端集成电路板用中性环保水基清洗剂，其特征在于：还包括0.1-0.8份的微量元素。
7.根据权利要求6所述的高端集成电路板用中性环保水基清洗剂，其特征在于：所述微量元素包括硅、硒、碳中的一种或几种，所述微量元素硒以硒化氢和/或硒单质的形式存在，所述碳以活性炭的形式存在。
8.一种如权利要求1-7任一项所述高端集成电路板用中性环保水基清洗剂的制备方法，其特征在于，包括以下步骤：
S1、按比例向反应釜中加入所述去离子水，在室温下(20～35℃)下边搅拌边依次加入所述表面活性剂、所述螯合剂、所述缓蚀剂，以及和/或所述微量元素，真空乳化并真空搅拌20～45分钟至所述组分均匀混合，形成混合液；
S2、向完成所述步骤S1的混合液中边搅拌边加入所述PH调节剂以调节所述混合液的PH至中性，即制得高端集成电路板用中性环保水基清洗剂，所述PH的范围为6.0～8.0。
9.根据权利要求8所述的高端集成电路板用中性环保水基清洗剂的制备方法，其特征在于：所述步骤S1中的转速为150～280转/分钟。
10.根据权利要求8所述的高端集成电路板用中性环保水基清洗剂的制备方法，其特征在于：所述步骤S2的搅拌速度为60～180转/分钟。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010528857.6A CN111621369A (zh) | 2020-06-11 | 2020-06-11 | 高端集成电路板用中性环保水基清洗剂及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010528857.6A CN111621369A (zh) | 2020-06-11 | 2020-06-11 | 高端集成电路板用中性环保水基清洗剂及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111621369A true CN111621369A (zh) | 2020-09-04 |
Family
ID=72257348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010528857.6A Pending CN111621369A (zh) | 2020-06-11 | 2020-06-11 | 高端集成电路板用中性环保水基清洗剂及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111621369A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113201409A (zh) * | 2021-05-08 | 2021-08-03 | 苏州凯瑞纳米科技有限公司 | 马达pcb板助焊剂的清洗组合物、制备、使用方法及其应用 |
| CN115216779A (zh) * | 2022-07-06 | 2022-10-21 | 陕西斯瑞新材料股份有限公司 | 一种无氧铜TU1或CuCr2杯状触头材料的表面处理方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103240034A (zh) * | 2013-04-28 | 2013-08-14 | 东华大学 | 磺酸盐型及磺酸内盐型氟碳表面活性剂及其制备和应用 |
| CN103525585A (zh) * | 2013-10-30 | 2014-01-22 | 合肥市华美光电科技有限公司 | 一种缓蚀电路板清洗剂及其制备方法 |
| CN104371838A (zh) * | 2014-10-29 | 2015-02-25 | 国家电网公司 | 一种清洗电路板的清洗剂及其制备方法 |
| EP3243213A1 (en) * | 2015-01-05 | 2017-11-15 | Entegris, Inc. | Post chemical mechanical polishing formulations and method of use |
| CN109929692A (zh) * | 2019-03-20 | 2019-06-25 | 中山翰荣新材料有限公司 | 一种中性低粘度水基环保清洗剂及其制备与使用方法 |
-
2020
- 2020-06-11 CN CN202010528857.6A patent/CN111621369A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103240034A (zh) * | 2013-04-28 | 2013-08-14 | 东华大学 | 磺酸盐型及磺酸内盐型氟碳表面活性剂及其制备和应用 |
| CN103525585A (zh) * | 2013-10-30 | 2014-01-22 | 合肥市华美光电科技有限公司 | 一种缓蚀电路板清洗剂及其制备方法 |
| CN104371838A (zh) * | 2014-10-29 | 2015-02-25 | 国家电网公司 | 一种清洗电路板的清洗剂及其制备方法 |
| EP3243213A1 (en) * | 2015-01-05 | 2017-11-15 | Entegris, Inc. | Post chemical mechanical polishing formulations and method of use |
| CN109929692A (zh) * | 2019-03-20 | 2019-06-25 | 中山翰荣新材料有限公司 | 一种中性低粘度水基环保清洗剂及其制备与使用方法 |
Non-Patent Citations (2)
| Title |
|---|
| 朱月海等: "《工业给水处理》", 30 September 2016, 同济大学出版社 * |
| 黄玉媛等: "《精细化工配方研究与产品配制技术 下》", 30 June 2003, 广东科技出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113201409A (zh) * | 2021-05-08 | 2021-08-03 | 苏州凯瑞纳米科技有限公司 | 马达pcb板助焊剂的清洗组合物、制备、使用方法及其应用 |
| CN115216779A (zh) * | 2022-07-06 | 2022-10-21 | 陕西斯瑞新材料股份有限公司 | 一种无氧铜TU1或CuCr2杯状触头材料的表面处理方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1205655C (zh) | 后化学－机械平面化(cmp)清洗组合物 | |
| EP1360712B9 (en) | Post chemical-mechanical planarization (cmp) cleaning composition | |
| JP2547394B2 (ja) | 二酸化ケイ素エッチング液およびその製法 | |
| EP1342777B1 (en) | Substrate cleaning liquid media and cleaning method | |
| US20050020463A1 (en) | Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same | |
| US6194366B1 (en) | Post chemical-mechanical planarization (CMP) cleaning composition | |
| CN106833993A (zh) | 一种水基清洗剂及其制备方法 | |
| CN111621369A (zh) | 高端集成电路板用中性环保水基清洗剂及其制备方法 | |
| EP2812422B1 (en) | A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and a sugar alcohol | |
| KR20080025697A (ko) | 구리를 부동태화하는 ｃｍｐ후 세정 조성물 및 이용 방법 | |
| JP2005142559A (ja) | 集積回路素子の洗浄液及びその洗浄液を用いた洗浄方法 | |
| CN1439701A (zh) | 半导体基板洗净液组合物 | |
| TW200949016A (en) | Etching solution, etching pre-treating solution and etching process for copper or copper alloy | |
| CN111020610A (zh) | 一种用于Cu互连CMP后腐蚀抑制剂的清洗液及配制方法 | |
| DE69838116T2 (de) | Verfahren zur Behandlung einer Substratoberfläche und Behandlungsmittel hierfür | |
| CN112143574A (zh) | 一种用于ic铜制程cmp后的清洗液及其制备方法 | |
| US5803956A (en) | Surface treating composition for micro processing | |
| DE602004009584T2 (de) | Halbleiterreinigungslösung | |
| EP2334774B1 (en) | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition | |
| CN109439463A (zh) | 水基清洗剂及其制备方法和应用 | |
| CN1127121C (zh) | 用于半导体器件或液晶器件生产过程的清洁剂 | |
| JPH0583520B2 (zh) | ||
| WO2013118042A1 (en) | A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and comprising no significant amounts of specific nitrogen-containing compounds | |
| CN113774393B (zh) | 一种fpc不锈钢补强板清洗剂及其制备方法 | |
| CN117305841B (zh) | 用于印制线路板的闪蚀药水及其闪蚀方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200904 |