JP6501493B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6501493B2
JP6501493B2 JP2014225390A JP2014225390A JP6501493B2 JP 6501493 B2 JP6501493 B2 JP 6501493B2 JP 2014225390 A JP2014225390 A JP 2014225390A JP 2014225390 A JP2014225390 A JP 2014225390A JP 6501493 B2 JP6501493 B2 JP 6501493B2
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Japan
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processing space
gas
processing
injection hole
side wall
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Japanese (ja)
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JP2016091821A (ja
JP2016091821A5 (enExample
Inventor
吉川　潤
潤 吉川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2014225390A priority Critical patent/JP6501493B2/ja
Priority to KR1020150154429A priority patent/KR102426265B1/ko
Priority to US14/931,919 priority patent/US10566174B2/en
Publication of JP2016091821A publication Critical patent/JP2016091821A/ja
Publication of JP2016091821A5 publication Critical patent/JP2016091821A5/ja
Application granted granted Critical
Publication of JP6501493B2 publication Critical patent/JP6501493B2/ja
Priority to US16/752,153 priority patent/US11456157B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2014225390A 2014-11-05 2014-11-05 プラズマ処理装置 Active JP6501493B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014225390A JP6501493B2 (ja) 2014-11-05 2014-11-05 プラズマ処理装置
KR1020150154429A KR102426265B1 (ko) 2014-11-05 2015-11-04 플라즈마 처리 장치
US14/931,919 US10566174B2 (en) 2014-11-05 2015-11-04 Plasma processing apparatus
US16/752,153 US11456157B2 (en) 2014-11-05 2020-01-24 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014225390A JP6501493B2 (ja) 2014-11-05 2014-11-05 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2016091821A JP2016091821A (ja) 2016-05-23
JP2016091821A5 JP2016091821A5 (enExample) 2017-12-07
JP6501493B2 true JP6501493B2 (ja) 2019-04-17

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ID=55853449

Family Applications (1)

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JP2014225390A Active JP6501493B2 (ja) 2014-11-05 2014-11-05 プラズマ処理装置

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US (2) US10566174B2 (enExample)
JP (1) JP6501493B2 (enExample)
KR (1) KR102426265B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6850636B2 (ja) * 2017-03-03 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置
US11508556B2 (en) 2017-05-16 2022-11-22 Tokyo Electron Limited Plasma processing apparatus
JP7058485B2 (ja) * 2017-05-16 2022-04-22 東京エレクトロン株式会社 プラズマ処理装置
CN107731649B (zh) * 2017-10-23 2018-06-08 北京大学 一种多功能半导体掺杂的装置
JP2021064508A (ja) * 2019-10-11 2021-04-22 東京エレクトロン株式会社 プラズマ処理装置
US20260011900A1 (en) * 2024-07-06 2026-01-08 Applied Materials, Inc. Wideband tem to tm01 mode converter for microwave plasma systems

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118557A (en) 1977-03-22 1978-10-17 Fujimoto Seiyaku Kk Production of garlic extract having ascorbic acid staibilizing property
US4854263B1 (en) * 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5824605A (en) * 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
JP3155199B2 (ja) * 1996-04-12 2001-04-09 東京エレクトロン株式会社 プラズマ処理装置
US7196283B2 (en) * 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
JP3828539B2 (ja) * 2001-06-20 2006-10-04 忠弘 大見 マイクロ波プラズマ処理装置、プラズマ処理方法及びマイクロ波放射部材
JP3969081B2 (ja) * 2001-12-14 2007-08-29 東京エレクトロン株式会社 プラズマ処理装置
JP4062928B2 (ja) * 2002-02-06 2008-03-19 東京エレクトロン株式会社 プラズマ処理装置
KR101153161B1 (ko) * 2005-04-01 2012-06-18 주성엔지니어링(주) 가스분사장치 및 이를 포함하는 액정표시소자의 제조장치
US20080254220A1 (en) * 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
JP5121698B2 (ja) * 2006-03-06 2013-01-16 東京エレクトロン株式会社 プラズマ処理装置
JP4418027B2 (ja) * 2007-03-28 2010-02-17 キヤノンアネルバ株式会社 真空処理装置
JP5058727B2 (ja) * 2007-09-06 2012-10-24 東京エレクトロン株式会社 天板構造及びこれを用いたプラズマ処理装置
JP4590597B2 (ja) * 2008-03-12 2010-12-01 国立大学法人東北大学 シャワープレートの製造方法
JP2010074065A (ja) * 2008-09-22 2010-04-02 Canon Anelva Corp 酸化膜除去のための基板洗浄処理方法
JP5357486B2 (ja) * 2008-09-30 2013-12-04 東京エレクトロン株式会社 プラズマ処理装置
JP2010118549A (ja) 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JPWO2010073578A1 (ja) * 2008-12-24 2012-06-07 芝浦メカトロニクス株式会社 プラズマ発生装置及びプラズマ処理装置
JP2010212277A (ja) * 2009-03-06 2010-09-24 Sharp Corp 成膜装置
WO2011021607A1 (ja) * 2009-08-21 2011-02-24 東京エレクトロン株式会社 プラズマ処理装置および基板処理方法
JP5457109B2 (ja) * 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
KR101612741B1 (ko) * 2010-03-08 2016-04-18 주성엔지니어링(주) 가스분배수단 및 이를 포함한 기판처리장치
JP5835985B2 (ja) * 2010-09-16 2015-12-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20120180954A1 (en) * 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP5955062B2 (ja) * 2011-04-25 2016-07-20 東京エレクトロン株式会社 プラズマ処理装置
JP2014082354A (ja) * 2012-10-17 2014-05-08 Hitachi High-Technologies Corp プラズマ処理装置
KR20160002543A (ko) * 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치

Also Published As

Publication number Publication date
KR102426265B1 (ko) 2022-07-29
JP2016091821A (ja) 2016-05-23
US20160126066A1 (en) 2016-05-05
US11456157B2 (en) 2022-09-27
US10566174B2 (en) 2020-02-18
US20200161090A1 (en) 2020-05-21
KR20160053816A (ko) 2016-05-13

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