JP6487928B2 - ポリシリコンの形成方法 - Google Patents
ポリシリコンの形成方法 Download PDFInfo
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- JP6487928B2 JP6487928B2 JP2016544424A JP2016544424A JP6487928B2 JP 6487928 B2 JP6487928 B2 JP 6487928B2 JP 2016544424 A JP2016544424 A JP 2016544424A JP 2016544424 A JP2016544424 A JP 2016544424A JP 6487928 B2 JP6487928 B2 JP 6487928B2
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- 238000000034 method Methods 0.000 title claims description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 44
- 229920005591 polysilicon Polymers 0.000 title claims description 44
- 239000000758 substrate Substances 0.000 claims description 23
- 230000008018 melting Effects 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000005224 laser annealing Methods 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 4
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 claims description 3
- 230000015271 coagulation Effects 0.000 claims 1
- 238000005345 coagulation Methods 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 239000011856 silicon-based particle Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- HGCGQDMQKGRJNO-UHFFFAOYSA-N xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Silicon Compounds (AREA)
Description
−半導体基板上にアモルファスシリコンを提供するステップと、
−アモルファスシリコンの少なくともある領域を第1レーザビームおよび第2レーザビームに曝すステップとを含み、
前記領域を前記第2レーザビームに曝す間に、前記領域に対するレーザビームの相対的な変位が生じないことを特徴とする方法を対象としている。
−半導体基板上にアモルファスシリコンを提供するステップと、
−アモルファスシリコンの少なくともある領域を第1レーザビームおよび第2レーザビームに曝すステップとを含み、
前記領域を前記第2レーザビームに曝す間に、前記領域に対してレーザビームを相対的に変位させないことを特徴としている。
Claims (9)
- 絶縁体または半導体基板上にポリシリコンを形成する方法であって、
−アモルファスシリコンと前記絶縁体または半導体基板との間の界面を規定するアモルファスシリコン層を前記絶縁体または半導体基板上に提供するステップと、
−前記アモルファスシリコン層の少なくともある領域を第1レーザビームに曝す第1ステップ、及び前記領域を第2レーザビームに曝す第2ステップとを含み、
前記領域を前記第2レーザビームに曝す間に、前記領域に対してレーザビームを相対的に変位させず、
前記第1ステップの間に、前記第1レーザビームによって生成されたエネルギー密度及び/又はパルス持続時間は、前記界面まで前記アモルファスシリコン層を完全に溶融し、比較的小さいポリシリコングレインを有するポリシリコン層を再結晶化させるように選択され、
前記第2ステップの間に、前記第2レーザビームによって生成されるエネルギー密度および/またはパルス持続時間は、前記第1レーザビームによって生成されるエネルギー密度および/またはパルス持続時間よりもそれぞれ小さく、前記第2レーザビームによって生成される前記エネルギー密度および/またはパルス持続時間は、前記第1レーザビームによって形成されたポリシリコングレインを部分的に溶融するように選択され、
前記第2レーザビームにより生じる溶融深度が、前記第1レーザビームにより生じる溶融深度よりも小さく、前記基板の表面領域に垂直な方向に1マイクロメートルよりも大きい粒径を有する比較的大きな粒子ポリシリコンの成長及び凝固を促進することを特徴とする方法。 - 請求項1に記載の方法において、
前記第2レーザビームにより生じるエネルギー密度が、前記第1レーザビームにより生じるエネルギー密度よりも小さいことを特徴とする方法。 - 請求項1又は2に記載の方法において、
前記アモルファスシリコンが、絶縁層の上に提供されて、それにより界面を規定し、前記第1レーザビームにより生じるエネルギー密度が、前記アモルファスシリコンと絶縁層の界面に至るまで前記アモルファスシリコンを溶融するのに十分であることを特徴とする方法。 - 請求項1乃至3の何れか一項に記載の方法において、
前記第1および第2レーザビームが、同じレーザ光源によって生成されることを特徴とする方法。 - 請求項1乃至4の何れか一項に記載の方法において、
レーザアニーリングの間、前記半導体基板が室温に保たれることを特徴とする方法。 - 請求項1乃至5の何れか一項に記載の方法において、
前記基板の複数の領域が、先ず、前記第1レーザビームに曝され、前記複数の領域の各々が、その後、前記第2レーザビームに曝されることを特徴とする方法。 - 前記基板の表面領域に垂直な方向に少なくとも1マイクロメートルの粒径を有する大粒径ポリシリコンを製造するための大粒径ポリシリコンを製造するための請求項1乃至6の何れか一項に記載の方法の使用。
- 前記基板の表面領域に垂直な方向に延在する縦方向粒子ポリシリコンを製造するための請求項1乃至6の何れか一項に記載の方法の使用。
- センサ、MEMS、NEMS、不揮発性メモリ、揮発性メモリ、NANDフラッシュ、DRAM、ポリシリコン接点および配線を製造するための請求項1乃至6の何れか一項に記載の方法の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14290007.5 | 2014-01-24 | ||
EP14290007.5A EP2899749A1 (en) | 2014-01-24 | 2014-01-24 | Method for forming polycrystalline silicon by laser irradiation |
PCT/EP2015/051280 WO2015110548A1 (en) | 2014-01-24 | 2015-01-22 | Method for forming polysilicon |
Publications (2)
Publication Number | Publication Date |
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JP2017508276A JP2017508276A (ja) | 2017-03-23 |
JP6487928B2 true JP6487928B2 (ja) | 2019-03-20 |
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JP2016544424A Active JP6487928B2 (ja) | 2014-01-24 | 2015-01-22 | ポリシリコンの形成方法 |
Country Status (8)
Country | Link |
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US (1) | US10020192B2 (ja) |
EP (2) | EP2899749A1 (ja) |
JP (1) | JP6487928B2 (ja) |
KR (1) | KR102201923B1 (ja) |
CN (1) | CN106030759B (ja) |
SG (1) | SG11201605112TA (ja) |
TW (1) | TWI650801B (ja) |
WO (1) | WO2015110548A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3252800A1 (en) * | 2016-05-31 | 2017-12-06 | Laser Systems & Solutions of Europe | Deep junction electronic device and process for manufacturing thereof |
KR102497781B1 (ko) * | 2017-09-29 | 2023-02-08 | 삼성디스플레이 주식회사 | 폴리실리콘층의 제조 방법 및 박막 트랜지스터 |
CN114784148B (zh) * | 2022-06-15 | 2022-09-23 | 浙江晶科能源有限公司 | 太阳能电池的制备方法及太阳能电池、光伏组件 |
Family Cites Families (17)
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JPH11102863A (ja) * | 1997-09-25 | 1999-04-13 | Toshiba Corp | 多結晶半導体膜の製造方法 |
JP2001326190A (ja) * | 2000-05-17 | 2001-11-22 | Nec Corp | 薄膜処理方法及び薄膜処理装置 |
US6451631B1 (en) * | 2000-08-10 | 2002-09-17 | Hitachi America, Ltd. | Thin film crystal growth by laser annealing |
US6746942B2 (en) * | 2000-09-05 | 2004-06-08 | Sony Corporation | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
CN1354495A (zh) * | 2000-09-05 | 2002-06-19 | 索尼株式会社 | 半导体薄膜及其生产方法和设备、及生产单晶薄膜的方法 |
JP2002083768A (ja) * | 2000-09-05 | 2002-03-22 | Sony Corp | 単結晶薄膜の製造方法、単結晶薄膜基板及び半導体装置 |
TW589667B (en) * | 2001-09-25 | 2004-06-01 | Sharp Kk | Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof |
JP2004087535A (ja) * | 2002-08-22 | 2004-03-18 | Sony Corp | 結晶質半導体材料の製造方法および半導体装置の製造方法 |
US7470602B2 (en) * | 2002-10-29 | 2008-12-30 | Sumitomo Heavy Industries, Ltd. | Crystalline film and its manufacture method using laser |
JP4481040B2 (ja) * | 2003-03-07 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2005129769A (ja) * | 2003-10-24 | 2005-05-19 | Hitachi Ltd | 半導体薄膜の改質方法、改質した半導体薄膜とその評価方法、およびこの半導体薄膜で形成した薄膜トランジスタ、並びにこの薄膜トランジスタを用いて構成した回路を有する画像表示装置 |
KR100707026B1 (ko) * | 2003-11-26 | 2007-04-11 | 비오이 하이디스 테크놀로지 주식회사 | 비정질실리콘막의 결정화 방법 |
JP2006093212A (ja) * | 2004-09-21 | 2006-04-06 | Sumitomo Heavy Ind Ltd | 多結晶層の形成方法、半導体装置の製造方法、及び半導体装置 |
US7605019B2 (en) * | 2006-07-07 | 2009-10-20 | Qimonda Ag | Semiconductor device with stacked chips and method for manufacturing thereof |
US20080070423A1 (en) * | 2006-09-15 | 2008-03-20 | Crowder Mark A | Buried seed one-shot interlevel crystallization |
DE102008045533B4 (de) * | 2008-09-03 | 2016-03-03 | Innovavent Gmbh | Verfahren und Vorrichtung zum Ändern der Struktur einer Halbleiterschicht |
JP2011216665A (ja) * | 2010-03-31 | 2011-10-27 | Sharp Corp | 結晶性半導体膜の形成方法、および、半導体デバイスの製造方法 |
-
2014
- 2014-01-24 EP EP14290007.5A patent/EP2899749A1/en not_active Withdrawn
-
2015
- 2015-01-22 US US15/113,972 patent/US10020192B2/en active Active
- 2015-01-22 EP EP15702681.6A patent/EP3097578B1/en active Active
- 2015-01-22 JP JP2016544424A patent/JP6487928B2/ja active Active
- 2015-01-22 CN CN201580005519.1A patent/CN106030759B/zh active Active
- 2015-01-22 KR KR1020167020471A patent/KR102201923B1/ko active IP Right Grant
- 2015-01-22 TW TW104102091A patent/TWI650801B/zh active
- 2015-01-22 WO PCT/EP2015/051280 patent/WO2015110548A1/en active Application Filing
- 2015-01-22 SG SG11201605112TA patent/SG11201605112TA/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP3097578A1 (en) | 2016-11-30 |
TWI650801B (zh) | 2019-02-11 |
KR20160110404A (ko) | 2016-09-21 |
CN106030759B (zh) | 2018-09-14 |
US20160343569A1 (en) | 2016-11-24 |
TW201539545A (zh) | 2015-10-16 |
WO2015110548A1 (en) | 2015-07-30 |
CN106030759A (zh) | 2016-10-12 |
SG11201605112TA (en) | 2016-07-28 |
EP3097578B1 (en) | 2021-06-02 |
EP2899749A1 (en) | 2015-07-29 |
US10020192B2 (en) | 2018-07-10 |
JP2017508276A (ja) | 2017-03-23 |
KR102201923B1 (ko) | 2021-01-12 |
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