JP6485383B2 - 化合物半導体装置およびその製造方法 - Google Patents

化合物半導体装置およびその製造方法 Download PDF

Info

Publication number
JP6485383B2
JP6485383B2 JP2016032293A JP2016032293A JP6485383B2 JP 6485383 B2 JP6485383 B2 JP 6485383B2 JP 2016032293 A JP2016032293 A JP 2016032293A JP 2016032293 A JP2016032293 A JP 2016032293A JP 6485383 B2 JP6485383 B2 JP 6485383B2
Authority
JP
Japan
Prior art keywords
layer
deep
trench
compound semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2016032293A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017152490A (ja
JP2017152490A5 (enExample
Inventor
竹内　有一
有一 竹内
敦也 秋葉
敦也 秋葉
鈴木　克己
克己 鈴木
侑佑 山下
侑佑 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Original Assignee
Denso Corp
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp, Toyota Motor Corp filed Critical Denso Corp
Priority to JP2016032293A priority Critical patent/JP6485383B2/ja
Priority to PCT/JP2017/001773 priority patent/WO2017145595A1/ja
Priority to US16/069,914 priority patent/US10593750B2/en
Publication of JP2017152490A publication Critical patent/JP2017152490A/ja
Publication of JP2017152490A5 publication Critical patent/JP2017152490A5/ja
Application granted granted Critical
Publication of JP6485383B2 publication Critical patent/JP6485383B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2016032293A 2016-02-23 2016-02-23 化合物半導体装置およびその製造方法 Expired - Fee Related JP6485383B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016032293A JP6485383B2 (ja) 2016-02-23 2016-02-23 化合物半導体装置およびその製造方法
PCT/JP2017/001773 WO2017145595A1 (ja) 2016-02-23 2017-01-19 化合物半導体装置およびその製造方法
US16/069,914 US10593750B2 (en) 2016-02-23 2017-01-19 Compound semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016032293A JP6485383B2 (ja) 2016-02-23 2016-02-23 化合物半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2017152490A JP2017152490A (ja) 2017-08-31
JP2017152490A5 JP2017152490A5 (enExample) 2018-06-07
JP6485383B2 true JP6485383B2 (ja) 2019-03-20

Family

ID=59685286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016032293A Expired - Fee Related JP6485383B2 (ja) 2016-02-23 2016-02-23 化合物半導体装置およびその製造方法

Country Status (3)

Country Link
US (1) US10593750B2 (enExample)
JP (1) JP6485383B2 (enExample)
WO (1) WO2017145595A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6673232B2 (ja) * 2017-01-17 2020-03-25 株式会社デンソー 炭化珪素半導体装置
JP6870547B2 (ja) * 2017-09-18 2021-05-12 株式会社デンソー 半導体装置およびその製造方法
JP7144651B2 (ja) * 2019-02-22 2022-09-30 豊田合成株式会社 半導体装置
JP6773198B1 (ja) 2019-11-06 2020-10-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7327283B2 (ja) 2020-05-29 2023-08-16 豊田合成株式会社 半導体装置
JP7347335B2 (ja) * 2020-05-29 2023-09-20 豊田合成株式会社 半導体装置
JP7331783B2 (ja) * 2020-05-29 2023-08-23 豊田合成株式会社 半導体装置の製造方法
TW202220206A (zh) * 2020-10-12 2022-05-16 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
TW202221924A (zh) * 2020-10-12 2022-06-01 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置
JP7807629B2 (ja) * 2022-03-25 2026-01-28 株式会社Flosfia 半導体装置
CN115148826B (zh) * 2022-09-06 2023-01-06 深圳平创半导体有限公司 一种深沟槽碳化硅jfet结构的制作方法
JP2024156495A (ja) * 2023-04-24 2024-11-06 株式会社デンソー 半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4683075B2 (ja) * 2008-06-10 2011-05-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5991809B2 (ja) * 2011-12-07 2016-09-14 ユニ・チャーム株式会社 使い捨て着用物品
JP5884617B2 (ja) * 2012-04-19 2016-03-15 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
JP6485299B2 (ja) * 2015-06-05 2019-03-20 豊田合成株式会社 半導体装置およびその製造方法ならびに電力変換装置

Also Published As

Publication number Publication date
WO2017145595A1 (ja) 2017-08-31
US20190035882A1 (en) 2019-01-31
JP2017152490A (ja) 2017-08-31
US10593750B2 (en) 2020-03-17

Similar Documents

Publication Publication Date Title
US9608104B2 (en) Silicon carbide semiconductor device and method for manufacturing same
JP6485382B2 (ja) 化合物半導体装置の製造方法および化合物半導体装置
JP2017152490A (ja) 化合物半導体装置およびその製造方法
JP6651894B2 (ja) 化合物半導体装置およびその製造方法
JP5671779B2 (ja) エピタキシャルウエハの製造方法および半導体装置の製造方法
JP4683075B2 (ja) 炭化珪素半導体装置およびその製造方法
US9099342B2 (en) Transistor and method for manufacturing same
US11227945B2 (en) Transistor having at least one transistor cell with a field electrode
JP2009200300A (ja) 半導体装置およびその製造方法
US20060199312A1 (en) Method of manufacturing a vertical junction field effect transistor having an epitaxial gate
JP2019004010A (ja) 半導体装置およびその製造方法
US9825125B2 (en) Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
CN112531017B (zh) SiC MOSFET功率器件
JP2010103260A (ja) 電力制御用半導体装置の製造方法
JP6662092B2 (ja) 化合物半導体装置の製造方法
JP2008294109A (ja) 半導体装置及び半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180420

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180420

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190122

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190204

R150 Certificate of patent or registration of utility model

Ref document number: 6485383

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees