JP6773198B1 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 214
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 212
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 210
- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000001257 hydrogen Substances 0.000 claims abstract description 57
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 57
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 55
- 238000010438 heat treatment Methods 0.000 claims abstract description 55
- 238000005530 etching Methods 0.000 claims abstract description 53
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 45
- 239000001301 oxygen Substances 0.000 claims abstract description 45
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 36
- 239000012298 atmosphere Substances 0.000 claims abstract description 28
- 239000010408 film Substances 0.000 claims description 154
- 239000000758 substrate Substances 0.000 claims description 76
- 238000000151 deposition Methods 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 21
- 238000011282 treatment Methods 0.000 claims description 21
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000005121 nitriding Methods 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 19
- 238000010586 diagram Methods 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 47
- 229910004298 SiO 2 Inorganic materials 0.000 description 35
- 230000008569 process Effects 0.000 description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 25
- 229910052799 carbon Inorganic materials 0.000 description 25
- 238000009792 diffusion process Methods 0.000 description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
実施の形態1にかかる炭化珪素半導体装置の構造について説明する。図1は、実施の形態1にかかる炭化珪素半導体装置の構造を示す断面図である。図1には、活性領域の断面構造を示し、エッジ終端領域を図示省略する(図3〜8においても同様)。図1に示す実施の形態1にかかる炭化珪素半導体装置10は、活性領域において、炭化珪素(SiC)を半導体材料として用いた半導体基板(半導体チップ)30のおもて面側にトレンチゲート構造を備えた縦型MOSFETである。活性領域は、MOSFETがオン状態のときに電流が流れる領域であり、MOSFETの複数の単位セル(素子の構成単位)が配置される。
次に、実施の形態2にかかる炭化珪素半導体装置の製造方法について説明する。図9は、実施の形態2にかかる炭化珪素半導体装置の製造方法の概要を示すフローチャートである。図9には、MOSゲートの形成工程のみを示す。実施の形態2にかかる炭化珪素半導体装置の構造は、実施の形態1にかかる炭化珪素半導体装置10(図1参照)の構造と同じである。
次に、実施の形態3にかかる炭化珪素半導体装置の製造方法について説明する。図10は、実施の形態3にかかる炭化珪素半導体装置の製造方法の概要を示すフローチャートである。図10には、MOSゲートの形成工程のみを示す。実施の形態3にかかる炭化珪素半導体装置の構造は、実施の形態1にかかる炭化珪素半導体装置10(図1参照)の構造と同じである。
次に、実施の形態4にかかる炭化珪素半導体装置の製造方法について説明する。図11は、実施の形態4にかかる炭化珪素半導体装置の製造方法の概要を示すフローチャートである。図11には、MOSゲートの形成工程のみを示す。実施の形態4にかかる炭化珪素半導体装置の構造は、実施の形態1にかかる炭化珪素半導体装置10(図1参照)の構造と同じである。
次に、界面区間14aの幅w1について検証した。図12は、実施例のSiO2/SiC界面のチャネル部分の観察結果を模式的に示す説明図である。図13,14は、それぞれ従来例1,2のSiO2/SiC界面のチャネル部分の観察結果を模式的に示す説明図である。図15は、実施例のチャネル付近の元素検出比を示す特性図である。図16,17は、それぞれ従来例1,2のチャネル付近の元素検出比を示す特性図である。
次に、界面区間14aの酸素量および窒素量について検証した。図18は、実験例の界面区間の酸素量および窒素量を示す図表である。上述した実施の形態1にかかる炭化珪素半導体装置の製造方法(図2参照)にしたがってステップS1〜S7(トレンチエッチングからゲート絶縁膜7形成までの処理)を順に行って作製した試料を複数用意した。これらの試料にそれぞれ異なる条件でPDA(ステップS8の処理)を行った結果(PDAを行わない試料の結果も含む)を図18に示す。
2 n-型ドリフト領域
3 p型ベース領域
3a チャネル
4 n+型ソース領域
5 p++型コンタクト領域
6 トレンチ
7 ゲート絶縁膜
8 ゲート電極
9 層間絶縁膜
10 炭化珪素半導体装置
11 オーミック電極
12 ソース電極
13 ドレイン電極
14 SiO2/SiC界面
14a 界面区間
21,22,22a,22b p+型領域
23 n型電流拡散領域
23a,23b n型領域
30 半導体基板
31 n+型出発基板
32 n-型エピタキシャル層
32a n-型エピタキシャル層の厚さを増した部分
33 p型エピタキシャル層
41 炭素濃度プロファイルの炭素濃度の減り始め
42 酸素濃度プロファイルの酸素濃度の増え終わり
X SiO2/SiC界面と直交する方向(半導体基板のおもて面に平行な第1方向)
Y 半導体基板のおもて面に平行でかつ第1方向と直交する第2方向
Z 深さ方向
w1 界面区間の幅
Claims (11)
- 炭化珪素からなる半導体基板と、
前記半導体基板の内部に設けられた第1導電型の第1半導体領域と、
前記半導体基板の第1主面と前記第1半導体領域との間に設けられた第2導電型の第2半導体領域と、
前記半導体基板の第1主面と前記第2半導体領域との間に設けられた第1導電型の第3半導体領域と、
前記第3半導体領域および前記第2半導体領域を貫通して前記第1半導体領域に達するトレンチと、
前記トレンチの内壁に沿って設けられたゲート絶縁膜と、
前記トレンチの内部において前記ゲート絶縁膜の上に設けられたゲート電極と、
前記第3半導体領域および前記第2半導体領域に電気的に接続された第1電極と、
前記半導体基板の第2主面に設けられた第2電極と、
を備え、
前記ゲート絶縁膜と前記第2半導体領域との界面の酸素濃度が変化している界面区間の酸素量は1.3×10 15 /cm 2 以上1.6×1015/cm2以下であり、
前記界面区間の窒素量は5.0×1014/cm2よりも大きいことを特徴とする炭化珪素半導体装置。 - 前記界面区間の幅は1.6nm以下であることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 炭化珪素からなる第1導電型の出発基板の上に、前記出発基板よりも不純物濃度の低い第1導電型の第1半導体領域となる第1導電型炭化珪素層を形成する第1工程と、
前記第1導電型炭化珪素層の上に、第2導電型の第2半導体領域となる第2導電型炭化珪素層を形成する第2工程と、
前記第2導電型炭化珪素層の表面領域に、第1導電型の第3半導体領域を選択的に形成する第3工程と、
前記第3半導体領域および前記第2半導体領域を貫通して前記第1半導体領域に達するトレンチを形成する第4工程と、
前記トレンチの内壁をエッチングして平坦化し、結晶構造の整った炭化珪素表面を露出させる第5工程と、
前記トレンチの平坦化された内壁に沿って、シリコンを含む薄膜を形成する第6工程と、
前記トレンチの内壁に沿って前記薄膜の上に、ゲート絶縁膜となる酸化膜を堆積する第7工程と、
一酸化窒素および窒素を含む雰囲気で堆積後熱処理を行い、前記ゲート絶縁膜と前記トレンチの内壁の炭化珪素部との界面特性を改善する第8工程と、
前記トレンチの内部において前記ゲート絶縁膜の上にゲート電極を形成する第9工程と、
を含み、
前記ゲート絶縁膜と前記第2半導体領域との界面の酸素濃度が変化している界面区間の酸素量を1.6×1015/cm2以下にし、
前記薄膜として窒化シリコン膜を堆積するか、または所定のタイミングで前記薄膜を窒化シリコン膜にして、前記界面区間の窒素量を5.0×1014/cm2よりも大きくし、
前記第4工程の後、前記第5工程の前に、1500℃以上の温度の水素雰囲気での第1熱処理により前記トレンチのコーナー部を丸める第10工程をさらに含み、
前記第5工程では、1500℃未満の温度の水素雰囲気での第2熱処理によって前記トレンチの内壁をエッチングして平坦化することを特徴とする炭化珪素半導体装置の製造方法。 - 前記第10工程、前記第5工程および前記第6工程は、同一の第1熱処理炉を用いて連続して行うことを特徴とする請求項3に記載の炭化珪素半導体装置の製造方法。
- 前記第6工程では、前記第2熱処理の降温時に、窒素を含むガスを導入して前記トレンチの内壁の炭化珪素表面を窒化することで、前記薄膜として窒化シリコン膜を形成することを特徴とする請求項3または4に記載の炭化珪素半導体装置の製造方法。
- 前記第6工程では、前記第7工程で用いる第2熱処理炉に原料ガスとしてシランガスおよび窒素ガスを導入し、前記薄膜として窒化シリコン膜を堆積することを特徴とする請求項3または4に記載の炭化珪素半導体装置の製造方法。
- 前記第6工程では、前記第7工程で用いる第2熱処理炉に原料ガスとしてシランガスを導入し、前記薄膜としてシリコン膜を堆積し、
前記第8工程では、前記堆積後熱処理により前記薄膜を窒化して窒化シリコン膜にすることを特徴とする請求項3または4に記載の炭化珪素半導体装置の製造方法。 - 前記第5工程では、前記界面区間の幅を1.6nm以下にすることを特徴とする請求項3〜7のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 前記第8工程では、前記堆積後熱処理の温度を1100℃以上1300℃以下とすることを特徴とする請求項3〜8のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 前記第8工程では、前記堆積後熱処理の処理時間を10分間以上30分間以下とすることを特徴とする請求項3〜9のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 炭化珪素からなる第1導電型の出発基板の上に、前記出発基板よりも不純物濃度の低い第1導電型の第1半導体領域となる第1導電型炭化珪素層を形成する第1工程と、
前記第1導電型炭化珪素層の上に、第2導電型の第2半導体領域となる第2導電型炭化珪素層を形成する第2工程と、
前記第2導電型炭化珪素層の表面領域に、第1導電型の第3半導体領域を選択的に形成する第3工程と、
前記第3半導体領域および前記第2半導体領域を貫通して前記第1半導体領域に達するトレンチを形成する第4工程と、
前記トレンチの内壁をエッチングして平坦化し、結晶構造の整った炭化珪素表面を露出させる第5工程と、
前記トレンチの平坦化された内壁に沿って、シリコンを含む薄膜を形成する第6工程と、
前記トレンチの内壁に沿って前記薄膜の上に、ゲート絶縁膜となる酸化膜を堆積する第7工程と、
一酸化窒素および窒素を含む雰囲気で堆積後熱処理を行い、前記ゲート絶縁膜と前記トレンチの内壁の炭化珪素部との界面特性を改善する第8工程と、
前記トレンチの内部において前記ゲート絶縁膜の上にゲート電極を形成する第9工程と、
を含み、
前記第8工程では、前記堆積後熱処理の温度を1100℃以上1300℃以下とし、前記堆積後熱処理の処理時間を10分間以上30分間以下とし、
前記第4工程の後、前記第5工程の前に、1500℃以上の温度の水素雰囲気での第1熱処理により前記トレンチのコーナー部を丸める第10工程をさらに含み、
前記第5工程では、1500℃未満の温度の水素雰囲気での第2熱処理によって前記トレンチの内壁をエッチングして平坦化することを特徴とする炭化珪素半導体装置の製造方法。
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