JP6477221B2 - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP6477221B2 JP6477221B2 JP2015097268A JP2015097268A JP6477221B2 JP 6477221 B2 JP6477221 B2 JP 6477221B2 JP 2015097268 A JP2015097268 A JP 2015097268A JP 2015097268 A JP2015097268 A JP 2015097268A JP 6477221 B2 JP6477221 B2 JP 6477221B2
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- JP
- Japan
- Prior art keywords
- film forming
- film
- electrode
- workpiece
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000151 deposition Methods 0.000 title description 4
- 239000010408 film Substances 0.000 claims description 135
- 238000004544 sputter deposition Methods 0.000 claims description 47
- 239000010409 thin film Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 23
- 229920005989 resin Polymers 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 10
- 230000005284 excitation Effects 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 5
- 239000008280 blood Substances 0.000 claims description 2
- 210000004369 blood Anatomy 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 46
- 239000000113 methacrylic resin Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 19
- 239000013077 target material Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- 239000002210 silicon-based material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000002131 composite material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Landscapes
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
11 本体
12 開閉部
13 ワーク載置部
16 接地部
17 接地部
18 接地部
19 接地部
21 電極部
22 ターゲット材料
23 スパッタ電極
24 CVD電極
25 CVD電極
26 CVD電極
27 CVD電極
31 開閉弁
32 流量調整弁
33 不活性ガスの供給部
34 開閉弁
35 流量調整弁
36 Si系材料の供給部
37 ターボ分子ポンプ
38 補助ポンプ
39 開閉弁
41 直流電源
45 高周波電源
48 開閉弁
49 開閉弁
51 シャッター
70 制御部
71 搬送機構駆動部
72 開閉弁駆動部
73 開閉部駆動部
74 電極駆動部
100 化合物層
101 混在領域
102 Alの薄膜
103 保護膜
W ワーク
Claims (2)
- 樹脂製のワークに対して金属薄膜を成膜する成膜方法であって、
前記ワークを対向電極により支持された状態でチャンバー内に配置するワーク搬入工程と、
前記チャンバー内にSi含有ガスおよび放電用ガスを供給するガス供給工程と、
励起電極を、前記チャンバー内において、前記対向電極の両側、または、前記対向電極を囲むように配置した状態において、当該励起電極に対して高周波電圧を印加することにより、Siの存在下でプラズマ処理を実行し、前記ワークの表面にSi、O、Cを含む化合物層を形成するプラズマ処理工程と、
ターゲット金属材料を備えたスパッタ電極を前記チャンバー内に配置した状態において、当該スパッタ電極に直流電圧を印加してスパッタリング成膜を実行し、前記ターゲット金属材料とSi、O、Cとが混在する混在領域上に前記ターゲット金属材料の薄膜を形成するスパッタリング成膜工程と、
を備えたことを特徴とする成膜方法。 - 請求項1に記載の成膜方法において、
前記スパッタリング成膜工程の後に、
前記チャンバー内に原料ガスを供給する原料ガス供給工程と、
前記励起電極に対して高周波電圧を印加することにより原料ガスを含む膜を成膜する成膜工程と、
を含む成膜方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015097268A JP6477221B2 (ja) | 2015-05-12 | 2015-05-12 | 成膜方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015097268A JP6477221B2 (ja) | 2015-05-12 | 2015-05-12 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016211051A JP2016211051A (ja) | 2016-12-15 |
JP6477221B2 true JP6477221B2 (ja) | 2019-03-06 |
Family
ID=57549398
Family Applications (1)
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JP2015097268A Expired - Fee Related JP6477221B2 (ja) | 2015-05-12 | 2015-05-12 | 成膜方法 |
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JP (1) | JP6477221B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018193581A (ja) * | 2017-05-16 | 2018-12-06 | 株式会社島津製作所 | 成膜方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6415363A (en) * | 1987-07-08 | 1989-01-19 | Shimadzu Corp | Thin film forming device |
JP3216055B2 (ja) * | 1992-11-25 | 2001-10-09 | スタンレー電気株式会社 | Cvd法によるリフレクターの表面処理方法 |
JPH08209352A (ja) * | 1995-02-06 | 1996-08-13 | Hitachi Ltd | プラズマ処理装置および方法 |
US6376064B1 (en) * | 1999-12-13 | 2002-04-23 | General Electric Company | Layered article with improved microcrack resistance and method of making |
JP2004299372A (ja) * | 2003-03-31 | 2004-10-28 | Toyo Riko Kk | 真空成膜方法及び表面被覆されたプラスチック製品 |
JP4429748B2 (ja) * | 2004-01-27 | 2010-03-10 | 新明和工業株式会社 | サークルライン型真空成膜装置 |
US20110117289A1 (en) * | 2007-12-28 | 2011-05-19 | Ulvac, Inc. | Deposition Apparatus and Deposition Method |
JP5235104B2 (ja) * | 2008-06-20 | 2013-07-10 | 株式会社アルバック | 成膜方法 |
JP5529459B2 (ja) * | 2008-08-06 | 2014-06-25 | 憲一 ▲高▼木 | コーティング方法 |
JP2014070268A (ja) * | 2012-10-02 | 2014-04-21 | Seiko Epson Corp | プラズマ処理装置、吐出装置のノズル板および吐出装置 |
WO2015037315A1 (ja) * | 2013-09-10 | 2015-03-19 | 株式会社島津製作所 | 成膜装置および成膜方法 |
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- 2015-05-12 JP JP2015097268A patent/JP6477221B2/ja not_active Expired - Fee Related
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