JPS6415363A - Thin film forming device - Google Patents

Thin film forming device

Info

Publication number
JPS6415363A
JPS6415363A JP17047787A JP17047787A JPS6415363A JP S6415363 A JPS6415363 A JP S6415363A JP 17047787 A JP17047787 A JP 17047787A JP 17047787 A JP17047787 A JP 17047787A JP S6415363 A JPS6415363 A JP S6415363A
Authority
JP
Japan
Prior art keywords
org
substrate
aluminum
gaseous
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17047787A
Other languages
Japanese (ja)
Inventor
Hiroshi Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP17047787A priority Critical patent/JPS6415363A/en
Publication of JPS6415363A publication Critical patent/JPS6415363A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To easily form many kinds of thin org. metallic films by adopting the constitution by which the thin org. metallic films can be formed by making common use of a CVD method and sputtering method. CONSTITUTION:The inside of a vacuum vessel 10 is evacuated and a reactive gas consisting of a gaseous org. monomer (e.g.; gaseous ethylene) and sputtering gas (e.g.; gaseous argon) is injected from an introducing mechanism 2 into the spacing between a par of electrodes 30 and 30 to which prescribed electric power is impressed. Glow discharge is generated near a substrate 40 and a polymerized film of the org. monomer is formed on the substrate 40. The argon atoms in the reactive gas are simultaneously converted to positive ions by the glow discharge and the ions are bombarded against a target metallic member 31 made of aluminum, etc., constituting a cathode to drive out the aluminum toms constituting the target member 31 so that the aluminum atoms collide against the substrate 40. The thin org. metallic film mixed with the ethylene polymer and the aluminum is thereby formed on the substrate 40.
JP17047787A 1987-07-08 1987-07-08 Thin film forming device Pending JPS6415363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17047787A JPS6415363A (en) 1987-07-08 1987-07-08 Thin film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17047787A JPS6415363A (en) 1987-07-08 1987-07-08 Thin film forming device

Publications (1)

Publication Number Publication Date
JPS6415363A true JPS6415363A (en) 1989-01-19

Family

ID=15905675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17047787A Pending JPS6415363A (en) 1987-07-08 1987-07-08 Thin film forming device

Country Status (1)

Country Link
JP (1) JPS6415363A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016211051A (en) * 2015-05-12 2016-12-15 株式会社島津製作所 Film deposition apparatus, plasma processing apparatus and film deposition method
US9876078B2 (en) 2013-03-29 2018-01-23 Sumco Techxiv Corporation Method for slicing semiconductor single crystal ingot

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9876078B2 (en) 2013-03-29 2018-01-23 Sumco Techxiv Corporation Method for slicing semiconductor single crystal ingot
JP2016211051A (en) * 2015-05-12 2016-12-15 株式会社島津製作所 Film deposition apparatus, plasma processing apparatus and film deposition method

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