JPS6415363A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPS6415363A JPS6415363A JP17047787A JP17047787A JPS6415363A JP S6415363 A JPS6415363 A JP S6415363A JP 17047787 A JP17047787 A JP 17047787A JP 17047787 A JP17047787 A JP 17047787A JP S6415363 A JPS6415363 A JP S6415363A
- Authority
- JP
- Japan
- Prior art keywords
- org
- substrate
- aluminum
- gaseous
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To easily form many kinds of thin org. metallic films by adopting the constitution by which the thin org. metallic films can be formed by making common use of a CVD method and sputtering method. CONSTITUTION:The inside of a vacuum vessel 10 is evacuated and a reactive gas consisting of a gaseous org. monomer (e.g.; gaseous ethylene) and sputtering gas (e.g.; gaseous argon) is injected from an introducing mechanism 2 into the spacing between a par of electrodes 30 and 30 to which prescribed electric power is impressed. Glow discharge is generated near a substrate 40 and a polymerized film of the org. monomer is formed on the substrate 40. The argon atoms in the reactive gas are simultaneously converted to positive ions by the glow discharge and the ions are bombarded against a target metallic member 31 made of aluminum, etc., constituting a cathode to drive out the aluminum toms constituting the target member 31 so that the aluminum atoms collide against the substrate 40. The thin org. metallic film mixed with the ethylene polymer and the aluminum is thereby formed on the substrate 40.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17047787A JPS6415363A (en) | 1987-07-08 | 1987-07-08 | Thin film forming device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17047787A JPS6415363A (en) | 1987-07-08 | 1987-07-08 | Thin film forming device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415363A true JPS6415363A (en) | 1989-01-19 |
Family
ID=15905675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17047787A Pending JPS6415363A (en) | 1987-07-08 | 1987-07-08 | Thin film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6415363A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016211051A (en) * | 2015-05-12 | 2016-12-15 | 株式会社島津製作所 | Film deposition apparatus, plasma processing apparatus and film deposition method |
US9876078B2 (en) | 2013-03-29 | 2018-01-23 | Sumco Techxiv Corporation | Method for slicing semiconductor single crystal ingot |
-
1987
- 1987-07-08 JP JP17047787A patent/JPS6415363A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9876078B2 (en) | 2013-03-29 | 2018-01-23 | Sumco Techxiv Corporation | Method for slicing semiconductor single crystal ingot |
JP2016211051A (en) * | 2015-05-12 | 2016-12-15 | 株式会社島津製作所 | Film deposition apparatus, plasma processing apparatus and film deposition method |
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