JP6470189B2 - 半導体光触媒 - Google Patents
半導体光触媒 Download PDFInfo
- Publication number
- JP6470189B2 JP6470189B2 JP2016000391A JP2016000391A JP6470189B2 JP 6470189 B2 JP6470189 B2 JP 6470189B2 JP 2016000391 A JP2016000391 A JP 2016000391A JP 2016000391 A JP2016000391 A JP 2016000391A JP 6470189 B2 JP6470189 B2 JP 6470189B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- semiconductor layer
- layer
- metal layer
- photocatalyst
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 137
- 239000011941 photocatalyst Substances 0.000 title claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 71
- 239000002184 metal Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 230000000052 comparative effect Effects 0.000 description 35
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 239000007864 aqueous solution Substances 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 16
- 238000007254 oxidation reaction Methods 0.000 description 15
- 238000006722 reduction reaction Methods 0.000 description 15
- 230000003647 oxidation Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000001699 photocatalysis Effects 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000013032 photocatalytic reaction Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229920000557 Nafion® Polymers 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- -1 perfluoro side chain Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Landscapes
- Catalysts (AREA)
Description
はじめに、実施例における半導体光触媒の作製について説明する。まず、主表面を(0001)面としたサファイア基板を用意する。次に、サファイア基板の上に、よく知られた有機金属気相成長法によりシリコンをドープしたGaNをエピタキシャル成長させ、引き続いて、Al0.05Ga0.95Nをエピタキシャル成長させる。例えば、アンモニアを窒素原料とし、トリエチルガリウムをGa原料とし、トリメチルアルミニウムをAl原料とすればよい。また、n型とするためのシリコンは、SiCl4を原料とすればよい。
比較試料1は、第2半導体層がない点で、実施例試料と異なっている。
次に、実施例試料,比較試料1,比較試料2,比較試料3,比較試料4,比較試料5を用いた酸化還元反応試験の結果について説明する。この試験では、図3を用いて説明した光触媒槽201をセルとして用い、水溶液202として濃度1mol/リットルの水酸化カリウム水溶液(125mリットル)を用いた。半導体光触媒100として実施例試料,比較試料1,比較試料2,比較試料3,比較試料4,比較試料5を用いた。
Claims (3)
- 基板の主表面上に形成され、Gaを含むn型の窒化物半導体からなり、主表面を(0001)面とした第1半導体層と、
前記第1半導体層の主表面上に接触して形成され、基板平面方向の格子定数が前記第1半導体層より小さいGaを含む窒化物半導体からなり、主表面を(0001)面とした第2半導体層と、
前記第2半導体層の主表面上にショットキー接合して形成された第1金属層と、
前記第1半導体層にオーミック接触して形成された第2金属層と
を備えることを特徴とする半導体光触媒。 - 請求項1記載の半導体光触媒において、
前記第1金属層、前記第2半導体層、前記第2金属層、および前記第2半導体層と前記第1金属層との接触領域は、露出する部分を備えることを特徴とする半導体光触媒。 - 請求項2記載の半導体光触媒において、
前記第1金属層は、複数の島部から構成されていることを特徴とする半導体光触媒。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016000391A JP6470189B2 (ja) | 2016-01-05 | 2016-01-05 | 半導体光触媒 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016000391A JP6470189B2 (ja) | 2016-01-05 | 2016-01-05 | 半導体光触媒 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017121596A JP2017121596A (ja) | 2017-07-13 |
JP6470189B2 true JP6470189B2 (ja) | 2019-02-13 |
Family
ID=59305531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016000391A Active JP6470189B2 (ja) | 2016-01-05 | 2016-01-05 | 半導体光触媒 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6470189B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6483628B2 (ja) * | 2016-01-05 | 2019-03-13 | 日本電信電話株式会社 | 半導体光触媒 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005028225A (ja) * | 2003-07-08 | 2005-02-03 | Toto Ltd | 光触媒材料 |
JP2006066556A (ja) * | 2004-08-25 | 2006-03-09 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体素子およびその製造方法 |
JP4783869B2 (ja) * | 2011-03-03 | 2011-09-28 | 独立行政法人科学技術振興機構 | Iii−v族窒化物半導体、光触媒半導体素子、光触媒酸化還元反応装置および光電気化学反応実行方法 |
WO2013031063A1 (ja) * | 2011-08-31 | 2013-03-07 | パナソニック株式会社 | 二酸化炭素を還元する方法 |
JP2015012058A (ja) * | 2013-06-27 | 2015-01-19 | コニカミノルタ株式会社 | 光電変換素子およびその製造方法、ならびにそれを用いた太陽電池 |
JP2015050224A (ja) * | 2013-08-30 | 2015-03-16 | 学校法人東京理科大学 | Iii−v族窒化物半導体、半導体発光素子、半導体発光装置、光触媒半導体素子、光触媒酸化還元反応装置および光電気化学反応実行方法 |
-
2016
- 2016-01-05 JP JP2016000391A patent/JP6470189B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017121596A (ja) | 2017-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6483628B2 (ja) | 半導体光触媒 | |
US9551077B2 (en) | Photoelectrode used for carbon dioxide reduction and method for reducing carbon dioxide using the photoelectrode | |
JP6715172B2 (ja) | 半導体光電極の製造方法 | |
JP5641489B2 (ja) | アルコールを生成する方法 | |
JP2017101289A (ja) | 半導体光電極 | |
JP7137070B2 (ja) | 窒化物半導体光電極の製造方法 | |
JP2013532228A (ja) | 太陽光燃料電池 | |
JP2017210666A (ja) | 二酸化炭素の還元方法、及び二酸化炭素の還元装置 | |
JP6470190B2 (ja) | 半導体光触媒 | |
JP2017101288A (ja) | 半導体光電極 | |
JP6470189B2 (ja) | 半導体光触媒 | |
JP6474000B2 (ja) | 二酸化炭素の還元方法、及び二酸化炭素の還元装置 | |
JP2018090862A (ja) | 半導体光電極 | |
JP2014227563A (ja) | 二酸化炭素還元用光化学電極、二酸化炭素還元装置、及び二酸化炭素の還元方法 | |
JP2018089604A (ja) | 半導体光電極 | |
JP6898566B2 (ja) | 半導体光電極 | |
JP6649237B2 (ja) | 光触媒酸化還元反応装置 | |
US20220008906A1 (en) | Semiconductor Optical Electrode | |
WO2019230343A1 (ja) | 半導体光電極 | |
JP6322157B2 (ja) | 半導体光触媒膜および酸化還元反応装置 | |
JP2019099884A (ja) | 半導体光電極 | |
JP7343810B2 (ja) | 窒化物半導体光電極の製造方法 | |
WO2024116357A1 (ja) | 半導体光電極 | |
WO2022123644A1 (ja) | 半導体光電極および半導体光電極の製造方法 | |
WO2023089655A1 (ja) | 半導体光電極 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180216 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180905 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181221 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190115 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190117 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6470189 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |