JP6468213B2 - 基板処理装置、基板処理方法及び記憶媒体 - Google Patents

基板処理装置、基板処理方法及び記憶媒体 Download PDF

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Publication number
JP6468213B2
JP6468213B2 JP2016030347A JP2016030347A JP6468213B2 JP 6468213 B2 JP6468213 B2 JP 6468213B2 JP 2016030347 A JP2016030347 A JP 2016030347A JP 2016030347 A JP2016030347 A JP 2016030347A JP 6468213 B2 JP6468213 B2 JP 6468213B2
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Prior art keywords
exhaust
pressure
substrate processing
unit
pressure measurement
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JP2016030347A
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English (en)
Japanese (ja)
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JP2017147415A (ja
Inventor
正幸 梶原
正幸 梶原
了至 安藤
了至 安藤
正木　洋一
洋一 正木
稲田　博一
博一 稲田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2016030347A priority Critical patent/JP6468213B2/ja
Priority to TW106104280A priority patent/TWI689970B/zh
Priority to KR1020170020464A priority patent/KR20170098175A/ko
Priority to CN201710087455.5A priority patent/CN107104065B/zh
Publication of JP2017147415A publication Critical patent/JP2017147415A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
JP2016030347A 2016-02-19 2016-02-19 基板処理装置、基板処理方法及び記憶媒体 Active JP6468213B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016030347A JP6468213B2 (ja) 2016-02-19 2016-02-19 基板処理装置、基板処理方法及び記憶媒体
TW106104280A TWI689970B (zh) 2016-02-19 2017-02-09 基板處理裝置、基板處理方法及記憶媒體
KR1020170020464A KR20170098175A (ko) 2016-02-19 2017-02-15 기판 처리 장치, 기판 처리 방법 및 기억 매체
CN201710087455.5A CN107104065B (zh) 2016-02-19 2017-02-17 基板处理装置和基板处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016030347A JP6468213B2 (ja) 2016-02-19 2016-02-19 基板処理装置、基板処理方法及び記憶媒体

Publications (2)

Publication Number Publication Date
JP2017147415A JP2017147415A (ja) 2017-08-24
JP6468213B2 true JP6468213B2 (ja) 2019-02-13

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JP2016030347A Active JP6468213B2 (ja) 2016-02-19 2016-02-19 基板処理装置、基板処理方法及び記憶媒体

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Country Link
JP (1) JP6468213B2 (zh)
KR (1) KR20170098175A (zh)
CN (1) CN107104065B (zh)
TW (1) TWI689970B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102564512B1 (ko) * 2020-12-28 2023-08-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1030973A (ja) * 1996-07-15 1998-02-03 Shimadzu Corp 圧力検知バルブ及びこれを用いた配管漏洩箇所の特定方法
JPH10312952A (ja) * 1997-05-14 1998-11-24 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000260680A (ja) * 1999-03-05 2000-09-22 Sony Corp 熱処理オーブン装置
JP2006215470A (ja) * 2005-02-07 2006-08-17 Nsk Ltd 露光装置の真空圧回路
JP4736938B2 (ja) * 2006-05-08 2011-07-27 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5369538B2 (ja) * 2008-08-12 2013-12-18 東京エレクトロン株式会社 液処理装置及び液処理方法並びに記憶媒体
JP6184760B2 (ja) * 2013-06-11 2017-08-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN103474378B (zh) * 2013-09-13 2016-03-16 华进半导体封装先导技术研发中心有限公司 基于tsv制程的真空预湿装置和抽真空预湿方法
US9575494B2 (en) * 2013-11-14 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for processing wafer
CN105047581A (zh) * 2014-04-25 2015-11-11 株式会社日立国际电气 衬底处理装置及半导体器件的制造方法

Also Published As

Publication number Publication date
CN107104065A (zh) 2017-08-29
TW201742105A (zh) 2017-12-01
CN107104065B (zh) 2021-11-12
KR20170098175A (ko) 2017-08-29
TWI689970B (zh) 2020-04-01
JP2017147415A (ja) 2017-08-24

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