JP6465597B2 - 光電変換装置、光電変換システム - Google Patents

光電変換装置、光電変換システム Download PDF

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Publication number
JP6465597B2
JP6465597B2 JP2014183698A JP2014183698A JP6465597B2 JP 6465597 B2 JP6465597 B2 JP 6465597B2 JP 2014183698 A JP2014183698 A JP 2014183698A JP 2014183698 A JP2014183698 A JP 2014183698A JP 6465597 B2 JP6465597 B2 JP 6465597B2
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Japan
Prior art keywords
photoelectric conversion
electrode
potential
conversion device
pixel electrode
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Expired - Fee Related
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JP2014183698A
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English (en)
Japanese (ja)
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JP2016058555A (ja
JP2016058555A5 (enExample
Inventor
孝教 山下
孝教 山下
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014183698A priority Critical patent/JP6465597B2/ja
Priority to US14/846,332 priority patent/US9698189B2/en
Publication of JP2016058555A publication Critical patent/JP2016058555A/ja
Publication of JP2016058555A5 publication Critical patent/JP2016058555A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2014183698A 2014-09-09 2014-09-09 光電変換装置、光電変換システム Expired - Fee Related JP6465597B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014183698A JP6465597B2 (ja) 2014-09-09 2014-09-09 光電変換装置、光電変換システム
US14/846,332 US9698189B2 (en) 2014-09-09 2015-09-04 Photoelectric converter and photoelectric conversion system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014183698A JP6465597B2 (ja) 2014-09-09 2014-09-09 光電変換装置、光電変換システム

Publications (3)

Publication Number Publication Date
JP2016058555A JP2016058555A (ja) 2016-04-21
JP2016058555A5 JP2016058555A5 (enExample) 2017-10-12
JP6465597B2 true JP6465597B2 (ja) 2019-02-06

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JP2014183698A Expired - Fee Related JP6465597B2 (ja) 2014-09-09 2014-09-09 光電変換装置、光電変換システム

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US (1) US9698189B2 (enExample)
JP (1) JP6465597B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119789558A (zh) * 2018-06-14 2025-04-08 松下知识产权经营株式会社 具备控制电极、透明电极和连接层的图像传感器
TWI831995B (zh) * 2019-10-04 2024-02-11 日商索尼半導體解決方案公司 固體攝像元件及電子機器
JP7527806B2 (ja) * 2020-02-19 2024-08-05 キヤノン株式会社 光電変換装置、撮像システム、移動体
TW202437550A (zh) * 2023-03-07 2024-09-16 睿生光電股份有限公司 偵測裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4224661B2 (ja) * 2000-02-10 2009-02-18 エルジー ディスプレイ カンパニー リミテッド 銅配線基板及びその製造方法並びに液晶表示装置
JP2006049873A (ja) * 2004-07-06 2006-02-16 Fuji Photo Film Co Ltd 機能素子
JP4905762B2 (ja) 2005-08-23 2012-03-28 富士フイルム株式会社 光電変換素子、撮像素子、および該光電変換素子の製造方法
JP4705062B2 (ja) * 2007-03-01 2011-06-22 株式会社神戸製鋼所 配線構造およびその作製方法
JP2008227092A (ja) * 2007-03-12 2008-09-25 Fujifilm Corp 光電変換素子、撮像素子、撮像装置
JP5564847B2 (ja) 2009-07-23 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5536488B2 (ja) * 2010-02-22 2014-07-02 ローム株式会社 カラー用固体撮像装置
JP2011238781A (ja) * 2010-05-11 2011-11-24 Panasonic Corp 固体撮像素子及びその製造方法
JP2012074418A (ja) * 2010-09-27 2012-04-12 Fujifilm Corp 固体撮像素子及び撮像装置
JP5683245B2 (ja) * 2010-12-08 2015-03-11 富士フイルム株式会社 撮像素子及び撮像素子の製造方法
WO2014103150A1 (ja) * 2012-12-28 2014-07-03 パナソニック株式会社 固体撮像装置およびその製造方法

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Publication number Publication date
US20160071986A1 (en) 2016-03-10
JP2016058555A (ja) 2016-04-21
US9698189B2 (en) 2017-07-04

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