JP6465189B2 - 半導体装置の製造方法及び真空処理装置 - Google Patents

半導体装置の製造方法及び真空処理装置 Download PDF

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JP6465189B2
JP6465189B2 JP2017206391A JP2017206391A JP6465189B2 JP 6465189 B2 JP6465189 B2 JP 6465189B2 JP 2017206391 A JP2017206391 A JP 2017206391A JP 2017206391 A JP2017206391 A JP 2017206391A JP 6465189 B2 JP6465189 B2 JP 6465189B2
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JP2018022925A (ja
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浩一 八田
浩一 八田
崇 早川
崇 早川
洋 奥野
洋 奥野
礼二 新納
礼二 新納
橋本　浩幸
浩幸 橋本
山口　達也
達也 山口
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Tokyo Electron Ltd
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JP6910319B2 (ja) * 2018-04-23 2021-07-28 東京エレクトロン株式会社 有機領域をエッチングする方法
JP7058545B2 (ja) * 2018-04-25 2022-04-22 東京エレクトロン株式会社 ガス供給管のクリーニング方法および処理システム
JP7045929B2 (ja) 2018-05-28 2022-04-01 東京エレクトロン株式会社 半導体装置の製造方法および基板処理装置
JP2019212776A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜用組成物および成膜装置
JP2019212777A (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜用組成物および成膜装置
WO2019235256A1 (ja) * 2018-06-05 2019-12-12 東京エレクトロン株式会社 成膜用組成物および成膜装置
JP7169910B2 (ja) * 2019-03-11 2022-11-11 東京エレクトロン株式会社 半導体装置の製造方法
JP7192588B2 (ja) * 2019-03-12 2022-12-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7193731B2 (ja) * 2019-03-29 2022-12-21 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7696258B2 (ja) * 2021-09-03 2025-06-20 東京エレクトロン株式会社 成膜システムおよび成膜方法

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US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
JPH0335239A (ja) * 1989-06-30 1991-02-15 Toshiba Corp 半導体装置の製造方法
JPH0517285A (ja) * 1991-07-12 1993-01-26 Fuji Xerox Co Ltd 多層レジスト成膜方法
JPH07258370A (ja) * 1994-03-28 1995-10-09 Ulvac Japan Ltd ポリ尿素膜の製造方法
JP3863934B2 (ja) * 1995-11-14 2006-12-27 株式会社アルバック 高分子薄膜の形成方法
JP2005292528A (ja) * 2004-04-01 2005-10-20 Jsr Corp レジスト下層膜形成組成物、レジスト下層膜およびパターン形成方法
JP5360416B2 (ja) * 2008-01-11 2013-12-04 日産化学工業株式会社 ウレア基を有するシリコン含有レジスト下層膜形成組成物
JP5860668B2 (ja) * 2011-10-28 2016-02-16 東京エレクトロン株式会社 半導体装置の製造方法
US9384977B2 (en) * 2012-07-02 2016-07-05 Nissan Chemical Industries, Ltd. Method of manufacturing semiconductor device using organic underlayer film forming composition for solvent development lithography process
JP2014056884A (ja) * 2012-09-11 2014-03-27 Konica Minolta Inc 電子デバイスおよびその製造方法
JP6239466B2 (ja) * 2014-08-15 2017-11-29 東京エレクトロン株式会社 半導体装置の製造方法

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JP2019075579A (ja) 2019-05-16
JP2018022925A (ja) 2018-02-08
JP6610812B2 (ja) 2019-11-27

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