JP6460586B2 - 発光装置及び発光装置実装体 - Google Patents
発光装置及び発光装置実装体 Download PDFInfo
- Publication number
- JP6460586B2 JP6460586B2 JP2017534665A JP2017534665A JP6460586B2 JP 6460586 B2 JP6460586 B2 JP 6460586B2 JP 2017534665 A JP2017534665 A JP 2017534665A JP 2017534665 A JP2017534665 A JP 2017534665A JP 6460586 B2 JP6460586 B2 JP 6460586B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- light emitting
- light
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 128
- 238000000605 extraction Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 description 38
- 230000005540 biological transmission Effects 0.000 description 22
- 239000000463 material Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 16
- 239000004020 conductor Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000003973 paint Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000000835 fiber Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910003480 inorganic solid Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
11 透過層
12 第1電極層
13 発光構造体
16 第1電極
17 絶縁層
18 第2電極
19 第1パッド
20 第2パッド
131 第2導電型半導体層
132 活性層
133 第1導電型半導体層
Claims (5)
- 順番に積層して設置される第1導電型半導体層、
活性層、および、
第2導電型半導体層を有し、
前記第2導電型半導体層の側が出光面側となる発光構造体と、
前記第2導電型半導体層における前記活性層から離れた表面に設けられるとともに、前記第2導電型半導体層と電気的に接続された第1電極層と、
前記第1導電型半導体層における前記活性層から離れた表面に設けられるとともに、前記第1導電型半導体層と電気的に接続された第2電極層と、
前記第2電極層における前記第1導電型半導体層から離れた表面に設けられ、前記活性層から発せられて前記第1導電型半導体層および前記第2電極層を透過してきた光を前記第2導電型半導体層の側に反射する反射層と、
前記反射層を貫通して設けられ、前記第2電極層と電気的に接続された第1電極と、
前記反射層、前記第2電極層および前記発光構造体を貫通して設けられるとともに、前記第1電極層と電気的に接続された第2電極と、
前記発光構造体と前記第2電極の間、および、第2電極層と前記第2電極との間に設けられた絶縁層と、を備える
ことを特徴とする発光装置。 - 請求項1に記載の発光装置において、
さらに、
前記第1電極層における前記第2導電型半導体層から離れた表面に設けられた透過層を備え、
前記透過層は、前記発光構造体の光抽出率を向上させるのに用いられる
ことを特徴とする発光装置。 - 請求項2に記載の発光装置において、
前記透過層における前記第1電極層から離れた表面は、凹凸状である
ことを特徴とする発光装置。 - 請求項1から請求項3のいずれかに記載の発光装置において、
前記第1電極は、前記第1電極における前記第2電極層から離れた表面に設けられ、前記第1電極に電流を送信するのに用いられる第1パッドを有し、
前記第2電極は、前記第2電極における前記第1電極層から離れた表面に設けられ、前記第2電極に電流を送信するのに用いられる第2パッドを有する
ことを特徴とする発光装置。 - 請求項1から請求項4のいずれかに記載の発光装置を実装した発光装置実装体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410848993.8A CN104681684A (zh) | 2014-12-30 | 2014-12-30 | 一种发光器件及发光器件封装 |
CN201410848993.8 | 2014-12-30 | ||
PCT/CN2015/070708 WO2016106853A1 (zh) | 2014-12-30 | 2015-01-14 | 一种发光器件及发光器件封装 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018500773A JP2018500773A (ja) | 2018-01-11 |
JP6460586B2 true JP6460586B2 (ja) | 2019-01-30 |
Family
ID=53316489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017534665A Active JP6460586B2 (ja) | 2014-12-30 | 2015-01-14 | 発光装置及び発光装置実装体 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6460586B2 (ja) |
KR (1) | KR101899743B1 (ja) |
CN (1) | CN104681684A (ja) |
GB (1) | GB2548515B (ja) |
WO (1) | WO2016106853A1 (ja) |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091628A (ja) * | 1998-09-09 | 2000-03-31 | Murata Mfg Co Ltd | 半導体発光素子 |
CN1300860C (zh) * | 2003-02-25 | 2007-02-14 | 中国科学院半导体研究所 | 氮化镓基发光二极管n型层欧姆接触电极的制作方法 |
DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
US10147843B2 (en) * | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
JP5426124B2 (ja) * | 2008-08-28 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
JP2009200522A (ja) * | 2009-05-15 | 2009-09-03 | Mitsubishi Chemicals Corp | GaN系半導体発光素子 |
KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP2011258856A (ja) * | 2010-06-11 | 2011-12-22 | Toshiba Corp | 発光素子および発光装置 |
JP5589812B2 (ja) * | 2010-12-06 | 2014-09-17 | 豊田合成株式会社 | 半導体発光素子 |
JP2012138452A (ja) * | 2010-12-27 | 2012-07-19 | Panasonic Corp | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
TWM436224U (ja) * | 2011-10-28 | 2012-08-21 | Rgb Consulting Co Ltd | |
CN102403425A (zh) * | 2011-11-25 | 2012-04-04 | 俞国宏 | 一种倒装led芯片的制作方法 |
TWI474516B (zh) * | 2012-08-30 | 2015-02-21 | Lextar Electronics Corp | 覆晶式發光二極體結構及其製造方法 |
CN104064634A (zh) * | 2013-03-22 | 2014-09-24 | 上海蓝光科技有限公司 | 一种高亮度GaN基共晶焊发光二极管的制造方法 |
JP6147061B2 (ja) * | 2013-04-02 | 2017-06-14 | スタンレー電気株式会社 | フリップチップ型半導体発光素子、半導体装置及びその製造方法 |
DE102013109316A1 (de) * | 2013-05-29 | 2014-12-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
-
2014
- 2014-12-30 CN CN201410848993.8A patent/CN104681684A/zh active Pending
-
2015
- 2015-01-14 WO PCT/CN2015/070708 patent/WO2016106853A1/zh active Application Filing
- 2015-01-14 GB GB1709895.5A patent/GB2548515B/en active Active
- 2015-01-14 KR KR1020177018445A patent/KR101899743B1/ko active IP Right Grant
- 2015-01-14 JP JP2017534665A patent/JP6460586B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20170091729A (ko) | 2017-08-09 |
GB201709895D0 (en) | 2017-08-02 |
GB2548515A8 (en) | 2018-07-18 |
CN104681684A (zh) | 2015-06-03 |
JP2018500773A (ja) | 2018-01-11 |
WO2016106853A1 (zh) | 2016-07-07 |
KR101899743B1 (ko) | 2018-09-17 |
GB2548515B (en) | 2020-08-26 |
GB2548515A (en) | 2017-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105098041B (zh) | 发光器件和包括发光器件的发光器件封装 | |
TWI599074B (zh) | 發光設備 | |
JP6104568B2 (ja) | 発光素子 | |
KR102037865B1 (ko) | 반도체 발광소자 및 반도체 발광소자 제조방법 | |
TWI513065B (zh) | Semiconductor light emitting device and light emitting device | |
KR101303168B1 (ko) | 반도체 발광부 연결체 | |
TWI569470B (zh) | 發光二極體及其製造方法 | |
US10121939B2 (en) | Semiconductor light-emitting devices and methods of manufacturing the same | |
US9472740B2 (en) | Light emitting diode package and lighting device using the same | |
JP4974867B2 (ja) | 発光ダイオード及びその製造方法 | |
CN110010737B (zh) | 发光器件和照明设备 | |
JP2013093584A (ja) | 発光素子 | |
TWI587542B (zh) | 發光裝置 | |
KR20130025232A (ko) | 발광 소자 | |
US9312439B2 (en) | Semiconductor light emitting device | |
US20150221825A1 (en) | Semiconductor light emitting device and semiconductor light emitting device package | |
TWI453952B (zh) | Light emitting element and manufacturing method thereof | |
JP2013258177A (ja) | Iii族窒化物半導体発光素子 | |
JP6460586B2 (ja) | 発光装置及び発光装置実装体 | |
KR20110132161A (ko) | 반도체 발광 소자 및 그 제조방법 | |
US10236417B2 (en) | Light-emitting element | |
US10333029B2 (en) | Light-emitting element | |
US9356199B1 (en) | Light-emitting device and light-emitting device package | |
KR101710889B1 (ko) | 발광 소자 | |
KR102175329B1 (ko) | 발광소자 및 이를 구비하는 조명 시스템 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170721 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180528 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180622 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180913 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181223 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6460586 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |