GB2548515A8 - Light emitting device and light emitting device packaging - Google Patents

Light emitting device and light emitting device packaging

Info

Publication number
GB2548515A8
GB2548515A8 GB1709895.5A GB201709895A GB2548515A8 GB 2548515 A8 GB2548515 A8 GB 2548515A8 GB 201709895 A GB201709895 A GB 201709895A GB 2548515 A8 GB2548515 A8 GB 2548515A8
Authority
GB
United Kingdom
Prior art keywords
light emitting
emitting device
conductive semiconductor
semiconductor layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB1709895.5A
Other versions
GB201709895D0 (en
GB2548515B (en
GB2548515A (en
Inventor
Cheng Yan
Zhou Gege
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Publication of GB201709895D0 publication Critical patent/GB201709895D0/en
Publication of GB2548515A publication Critical patent/GB2548515A/en
Publication of GB2548515A8 publication Critical patent/GB2548515A8/en
Application granted granted Critical
Publication of GB2548515B publication Critical patent/GB2548515B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials

Abstract

Provided are a light emitting device and light emitting device packaging. The light emitting device (10) comprises a light emitting structure (13). The light emitting structure (13) comprises a first conductive semiconductor layer (133), an active layer (132) and a second conductive semiconductor layer (131) that are stacked in sequence. The second conductive semiconductor layer (131) serves as a light output surface of the light emitting structure (13). A first electrode (16) is disposed on a surface of the first conductive semiconductor layer (133) away from the active layer (132), and is electrically connected to the first conductive semiconductor layer (133). The first electrode layer (12) is disposed on a surface of the second conductive semiconductor layer (131) away from the active layer (132), and is electrically connected to the second conductive semiconductor layer (131). A second electrode (18) penetrates through the light emitting structure (13), and is electrically connected to the first electrode layer (12). An insulation layer (17) is disposed between the light emitting structure (13) and the second electrode (18). By using the present invention, the electrodes are led out from the bottom of the light emitting device, so that light is prevented from being blocked and absorbed by leading wires, and the light output rate is increased
GB1709895.5A 2014-12-30 2015-01-14 Light emitting device and light emitting device package Active GB2548515B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410848993.8A CN104681684A (en) 2014-12-30 2014-12-30 Light emitting device and light emitting device package
PCT/CN2015/070708 WO2016106853A1 (en) 2014-12-30 2015-01-14 Light emitting device and light emitting device packaging

Publications (4)

Publication Number Publication Date
GB201709895D0 GB201709895D0 (en) 2017-08-02
GB2548515A GB2548515A (en) 2017-09-20
GB2548515A8 true GB2548515A8 (en) 2018-07-18
GB2548515B GB2548515B (en) 2020-08-26

Family

ID=53316489

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1709895.5A Active GB2548515B (en) 2014-12-30 2015-01-14 Light emitting device and light emitting device package

Country Status (5)

Country Link
JP (1) JP6460586B2 (en)
KR (1) KR101899743B1 (en)
CN (1) CN104681684A (en)
GB (1) GB2548515B (en)
WO (1) WO2016106853A1 (en)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091628A (en) * 1998-09-09 2000-03-31 Murata Mfg Co Ltd Semiconductor light emitting element
CN1300860C (en) * 2003-02-25 2007-02-14 中国科学院半导体研究所 Method for producing N-type layer ohmic contact electrode of GaN LED
DE102007022947B4 (en) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic semiconductor body and method for producing such
US10147843B2 (en) * 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
JP5426124B2 (en) * 2008-08-28 2014-02-26 株式会社東芝 Semiconductor light emitting device manufacturing method and semiconductor light emitting device
JP2009200522A (en) * 2009-05-15 2009-09-03 Mitsubishi Chemicals Corp GaN SYSTEM SEMICONDUCTOR LIGHT EMITTING ELEMENT
KR100986560B1 (en) 2010-02-11 2010-10-07 엘지이노텍 주식회사 Light emitting device and fabrication method thereof
JP2011258856A (en) * 2010-06-11 2011-12-22 Toshiba Corp Light-emitting element and light-emitting device
JP5589812B2 (en) * 2010-12-06 2014-09-17 豊田合成株式会社 Semiconductor light emitting device
JP2012138452A (en) * 2010-12-27 2012-07-19 Panasonic Corp Method of manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting element
TWM436224U (en) * 2011-10-28 2012-08-21 Rgb Consulting Co Ltd
CN102403425A (en) * 2011-11-25 2012-04-04 俞国宏 Method for manufacturing inverted LED chip
TWI474516B (en) * 2012-08-30 2015-02-21 Lextar Electronics Corp Flip-chip light-emitting diode structure and manufacturing method thereof
CN104064634A (en) * 2013-03-22 2014-09-24 上海蓝光科技有限公司 Production method for high-brightness GaN-based eutectic welding light emitting diodes
JP6147061B2 (en) * 2013-04-02 2017-06-14 スタンレー電気株式会社 Flip-chip type semiconductor light emitting device, semiconductor device and manufacturing method thereof
DE102013109316A1 (en) * 2013-05-29 2014-12-04 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip

Also Published As

Publication number Publication date
GB201709895D0 (en) 2017-08-02
JP2018500773A (en) 2018-01-11
GB2548515B (en) 2020-08-26
WO2016106853A1 (en) 2016-07-07
KR20170091729A (en) 2017-08-09
CN104681684A (en) 2015-06-03
JP6460586B2 (en) 2019-01-30
KR101899743B1 (en) 2018-09-17
GB2548515A (en) 2017-09-20

Similar Documents

Publication Publication Date Title
EP4235823A3 (en) Compact light emitting diode chip
WO2016064134A3 (en) Light emitting device and method of fabricating the same
WO2015044621A3 (en) Optoelectronic device comprising light-emitting diodes
EP2790223A3 (en) Light emitting device
JP2013175470A5 (en)
EP2840605A3 (en) A semiconductor component having a lateral semiconductor device and a vertical semiconductor device
JP2015177135A5 (en)
EP3038172A3 (en) Light emitting device, light emitting device array and lighting apparatus including the same
TW201614747A (en) Wire bond sensor package and method
JP2015012292A5 (en)
JP2014053606A5 (en)
EP2657992A3 (en) Light emitting device and light emitting device package
EP2360744A3 (en) Light emitting diode and method of manufacturing the same
SG10201803188TA (en) Semiconductor packages
EP2701216A3 (en) Light emitting device
EP2763195A3 (en) Light emitting device
JP2014039039A5 (en)
EP2988339A3 (en) Light emitting device
TW201613063A (en) Semiconductor device
EP2924728A3 (en) Bond pad for a semiconductor device
EP2728630A3 (en) Electrode configuration for a light emitting diode
TW201240146A (en) Light-emitting semiconductor chip
EP2760046A3 (en) Lamp unit
EP2669964A3 (en) Semiconductor light emitting device and light emitting module
WO2015189056A3 (en) Optoelectronic semiconductor component