GB2548515A8 - Light emitting device and light emitting device packaging - Google Patents
Light emitting device and light emitting device packagingInfo
- Publication number
- GB2548515A8 GB2548515A8 GB1709895.5A GB201709895A GB2548515A8 GB 2548515 A8 GB2548515 A8 GB 2548515A8 GB 201709895 A GB201709895 A GB 201709895A GB 2548515 A8 GB2548515 A8 GB 2548515A8
- Authority
- GB
- United Kingdom
- Prior art keywords
- light emitting
- emitting device
- conductive semiconductor
- semiconductor layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Abstract
Provided are a light emitting device and light emitting device packaging. The light emitting device (10) comprises a light emitting structure (13). The light emitting structure (13) comprises a first conductive semiconductor layer (133), an active layer (132) and a second conductive semiconductor layer (131) that are stacked in sequence. The second conductive semiconductor layer (131) serves as a light output surface of the light emitting structure (13). A first electrode (16) is disposed on a surface of the first conductive semiconductor layer (133) away from the active layer (132), and is electrically connected to the first conductive semiconductor layer (133). The first electrode layer (12) is disposed on a surface of the second conductive semiconductor layer (131) away from the active layer (132), and is electrically connected to the second conductive semiconductor layer (131). A second electrode (18) penetrates through the light emitting structure (13), and is electrically connected to the first electrode layer (12). An insulation layer (17) is disposed between the light emitting structure (13) and the second electrode (18). By using the present invention, the electrodes are led out from the bottom of the light emitting device, so that light is prevented from being blocked and absorbed by leading wires, and the light output rate is increased
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410848993.8A CN104681684A (en) | 2014-12-30 | 2014-12-30 | Light emitting device and light emitting device package |
PCT/CN2015/070708 WO2016106853A1 (en) | 2014-12-30 | 2015-01-14 | Light emitting device and light emitting device packaging |
Publications (4)
Publication Number | Publication Date |
---|---|
GB201709895D0 GB201709895D0 (en) | 2017-08-02 |
GB2548515A GB2548515A (en) | 2017-09-20 |
GB2548515A8 true GB2548515A8 (en) | 2018-07-18 |
GB2548515B GB2548515B (en) | 2020-08-26 |
Family
ID=53316489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1709895.5A Active GB2548515B (en) | 2014-12-30 | 2015-01-14 | Light emitting device and light emitting device package |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6460586B2 (en) |
KR (1) | KR101899743B1 (en) |
CN (1) | CN104681684A (en) |
GB (1) | GB2548515B (en) |
WO (1) | WO2016106853A1 (en) |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091628A (en) * | 1998-09-09 | 2000-03-31 | Murata Mfg Co Ltd | Semiconductor light emitting element |
CN1300860C (en) * | 2003-02-25 | 2007-02-14 | 中国科学院半导体研究所 | Method for producing N-type layer ohmic contact electrode of GaN LED |
DE102007022947B4 (en) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic semiconductor body and method for producing such |
US10147843B2 (en) * | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
JP5426124B2 (en) * | 2008-08-28 | 2014-02-26 | 株式会社東芝 | Semiconductor light emitting device manufacturing method and semiconductor light emitting device |
JP2009200522A (en) * | 2009-05-15 | 2009-09-03 | Mitsubishi Chemicals Corp | GaN SYSTEM SEMICONDUCTOR LIGHT EMITTING ELEMENT |
KR100986560B1 (en) | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | Light emitting device and fabrication method thereof |
JP2011258856A (en) * | 2010-06-11 | 2011-12-22 | Toshiba Corp | Light-emitting element and light-emitting device |
JP5589812B2 (en) * | 2010-12-06 | 2014-09-17 | 豊田合成株式会社 | Semiconductor light emitting device |
JP2012138452A (en) * | 2010-12-27 | 2012-07-19 | Panasonic Corp | Method of manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting element |
TWM436224U (en) * | 2011-10-28 | 2012-08-21 | Rgb Consulting Co Ltd | |
CN102403425A (en) * | 2011-11-25 | 2012-04-04 | 俞国宏 | Method for manufacturing inverted LED chip |
TWI474516B (en) * | 2012-08-30 | 2015-02-21 | Lextar Electronics Corp | Flip-chip light-emitting diode structure and manufacturing method thereof |
CN104064634A (en) * | 2013-03-22 | 2014-09-24 | 上海蓝光科技有限公司 | Production method for high-brightness GaN-based eutectic welding light emitting diodes |
JP6147061B2 (en) * | 2013-04-02 | 2017-06-14 | スタンレー電気株式会社 | Flip-chip type semiconductor light emitting device, semiconductor device and manufacturing method thereof |
DE102013109316A1 (en) * | 2013-05-29 | 2014-12-04 | Osram Opto Semiconductors Gmbh | Method for producing a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip |
-
2014
- 2014-12-30 CN CN201410848993.8A patent/CN104681684A/en active Pending
-
2015
- 2015-01-14 JP JP2017534665A patent/JP6460586B2/en active Active
- 2015-01-14 GB GB1709895.5A patent/GB2548515B/en active Active
- 2015-01-14 KR KR1020177018445A patent/KR101899743B1/en active IP Right Grant
- 2015-01-14 WO PCT/CN2015/070708 patent/WO2016106853A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
GB201709895D0 (en) | 2017-08-02 |
JP2018500773A (en) | 2018-01-11 |
GB2548515B (en) | 2020-08-26 |
WO2016106853A1 (en) | 2016-07-07 |
KR20170091729A (en) | 2017-08-09 |
CN104681684A (en) | 2015-06-03 |
JP6460586B2 (en) | 2019-01-30 |
KR101899743B1 (en) | 2018-09-17 |
GB2548515A (en) | 2017-09-20 |
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