GB201709895D0 - Light emitting device and light emitting device packaging - Google Patents

Light emitting device and light emitting device packaging

Info

Publication number
GB201709895D0
GB201709895D0 GBGB1709895.5A GB201709895A GB201709895D0 GB 201709895 D0 GB201709895 D0 GB 201709895D0 GB 201709895 A GB201709895 A GB 201709895A GB 201709895 D0 GB201709895 D0 GB 201709895D0
Authority
GB
United Kingdom
Prior art keywords
light emitting
emitting device
packaging
device packaging
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1709895.5A
Other versions
GB2548515B (en
GB2548515A8 (en
GB2548515A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Publication of GB201709895D0 publication Critical patent/GB201709895D0/en
Publication of GB2548515A publication Critical patent/GB2548515A/en
Publication of GB2548515A8 publication Critical patent/GB2548515A8/en
Application granted granted Critical
Publication of GB2548515B publication Critical patent/GB2548515B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
GB1709895.5A 2014-12-30 2015-01-14 Light emitting device and light emitting device package Active GB2548515B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410848993.8A CN104681684A (en) 2014-12-30 2014-12-30 Light emitting device and light emitting device package
PCT/CN2015/070708 WO2016106853A1 (en) 2014-12-30 2015-01-14 Light emitting device and light emitting device packaging

Publications (4)

Publication Number Publication Date
GB201709895D0 true GB201709895D0 (en) 2017-08-02
GB2548515A GB2548515A (en) 2017-09-20
GB2548515A8 GB2548515A8 (en) 2018-07-18
GB2548515B GB2548515B (en) 2020-08-26

Family

ID=53316489

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1709895.5A Active GB2548515B (en) 2014-12-30 2015-01-14 Light emitting device and light emitting device package

Country Status (5)

Country Link
JP (1) JP6460586B2 (en)
KR (1) KR101899743B1 (en)
CN (1) CN104681684A (en)
GB (1) GB2548515B (en)
WO (1) WO2016106853A1 (en)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091628A (en) * 1998-09-09 2000-03-31 Murata Mfg Co Ltd Semiconductor light emitting element
CN1300860C (en) * 2003-02-25 2007-02-14 中国科学院半导体研究所 Method for producing N-type layer ohmic contact electrode of GaN LED
DE102007022947B4 (en) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic semiconductor body and method for producing such
US10147843B2 (en) * 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
JP5426124B2 (en) * 2008-08-28 2014-02-26 株式会社東芝 Semiconductor light emitting device manufacturing method and semiconductor light emitting device
JP2009200522A (en) * 2009-05-15 2009-09-03 Mitsubishi Chemicals Corp GaN SYSTEM SEMICONDUCTOR LIGHT EMITTING ELEMENT
KR100986560B1 (en) 2010-02-11 2010-10-07 엘지이노텍 주식회사 Light emitting device and fabrication method thereof
JP2011258856A (en) * 2010-06-11 2011-12-22 Toshiba Corp Light-emitting element and light-emitting device
JP5589812B2 (en) * 2010-12-06 2014-09-17 豊田合成株式会社 Semiconductor light emitting device
JP2012138452A (en) * 2010-12-27 2012-07-19 Panasonic Corp Method of manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting element
TWM436224U (en) * 2011-10-28 2012-08-21 Rgb Consulting Co Ltd
CN102403425A (en) * 2011-11-25 2012-04-04 俞国宏 Method for manufacturing inverted LED chip
TWI474516B (en) * 2012-08-30 2015-02-21 Lextar Electronics Corp Flip-chip light-emitting diode structure and manufacturing method thereof
CN104064634A (en) * 2013-03-22 2014-09-24 上海蓝光科技有限公司 Production method for high-brightness GaN-based eutectic welding light emitting diodes
JP6147061B2 (en) * 2013-04-02 2017-06-14 スタンレー電気株式会社 Flip-chip type semiconductor light emitting device, semiconductor device and manufacturing method thereof
DE102013109316A1 (en) * 2013-05-29 2014-12-04 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip

Also Published As

Publication number Publication date
JP2018500773A (en) 2018-01-11
GB2548515B (en) 2020-08-26
WO2016106853A1 (en) 2016-07-07
KR20170091729A (en) 2017-08-09
CN104681684A (en) 2015-06-03
JP6460586B2 (en) 2019-01-30
KR101899743B1 (en) 2018-09-17
GB2548515A8 (en) 2018-07-18
GB2548515A (en) 2017-09-20

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