JP2018500773A - Light emitting device and light emitting device mounting body - Google Patents

Abstract

The present invention provides a light emitting device and a light emitting device mounting body that increase the light extraction rate of the light emitting device. A light emitting device includes a light emitting structure, a first electrode, a first electrode layer, a second electrode, and an insulating layer. The light emitting structure includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are stacked in order. Among them, the second conductivity type semiconductor layer is a light emitting surface of the light emitting structure. The first electrode is provided on the surface of the first conductivity type semiconductor layer away from the active layer, and is electrically connected to the first conductivity type semiconductor layer. The first electrode layer is provided on the surface of the second conductivity type semiconductor layer away from the active layer, and is electrically connected to the second conductivity type semiconductor layer. The second electrode penetrates the light emitting structure and is electrically connected to the first electrode layer. The insulating layer is provided between the light emitting structure and the second electrode. By adopting the present invention and pulling out the electrode from the bottom of the light emitting device, the lead wire is prevented from blocking or absorbing the light beam, and the light emission rate is improved. [Selection] Figure 1

Description

  The present invention requires priority of the prior application of the application number 201410848993.8 filed on December 30, 2014, entitled “Light Emitting Device and Light Emitting Device Mounted Body”, and the content of the prior application is incorporated herein by reference. Merged.

  The present invention relates to the field of light emitting devices, and more particularly, to a light emitting device and a light emitting device mounting body.

  Keeping energy available is an important issue that has always received attention from society. Scientists are currently trying to improve the energy problems they face by developing a variety of low-power, high-performance arc tubes. Among them, light-emitting diodes (abbreviated as LEDs) are outstanding in terms of efficiently reducing power consumption, and are continuing to be widely used in various aspects of daily life.

  In the prior art, for example, a light-emitting device such as an LED light-emitting chip is normally connected to a positive electrode and a negative electrode by drawing a lead wire from a light-emitting surface. However, the conducting wire itself absorbs or blocks light emitted from the light emitting device, which affects the light extraction rate of the light emitting device.

  The embodiment of the present invention solves the technical problem that the light-emitting chip affects the light emission efficiency by connecting to the electrode with the lead wire, prevents the lead wire from absorbing or blocking light, and the light of the light-emitting device. It is an object of the present invention to provide a light emitting device and a light emitting device mounting body that can increase the extraction rate.

  First, an embodiment of the present invention provides a light emitting device. The light emitting device includes a light emitting structure, a first electrode, a first electrode layer, a second electrode, and an insulating layer.

  The light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are sequentially stacked, and the second conductive semiconductor layer includes the light emitting structure. It is the light exit surface of the body.

  The first electrode is provided on a surface of the first conductive semiconductor layer away from the active layer, and is electrically connected to the first conductive semiconductor layer.

  The first electrode layer is provided on a surface of the second conductive semiconductor layer away from the active layer, and is electrically connected to the second conductive semiconductor layer.

  The second electrode penetrates the light emitting structure and is electrically connected to the first electrode layer.

  The insulating layer is provided between the light emitting structure and the second electrode.

  In combination with the first point, in the first possible realization method, the light emitting device further comprises a reflective layer. The reflective layer is provided on a surface of the first conductive semiconductor layer away from the active layer, and the first electrode and the second electrode penetrate the reflective layer.

  In combination with the first point, in a second possible realization method, the light emitting device further comprises a transmissive layer, the transmissive layer being separated from the second conductive semiconductor layer in the first electrode layer Provided on the surface, the transmission layer is used to improve the light extraction rate of the light emitting structure.

  In the third realization method considered in combination with the second realization method considered as the first point, the surface of the transmission layer away from the first electrode layer is uneven.

  In the fourth possible realization method in combination with the first point, the light emitting device further includes a second electrode layer. The second electrode layer is provided on a surface of the first conductive semiconductor layer away from the insulating layer, and the first electrode and the first conductive semiconductor layer are electrically connected through the second electrode layer. Is done. The second electrode penetrates the second electrode layer, and the insulating layer is further provided between the second electrode and the second electrode layer.

  In the fifth possible realization method in combination with the fourth possible realization method in the first point, the light emitting device further includes a reflective layer. The reflective layer is provided on a surface of the second electrode layer away from the first conductive semiconductor layer, and the first electrode and the second electrode penetrate the reflective layer.

  In the sixth possible realization method in combination with the first point, the light emitting structure further includes a first pad and a second pad. The first pad is provided on a surface of the first electrode away from the first conductive type semiconductor layer, and is used to electrically connect to the first electrode. The second pad is provided on a surface of the second electrode away from the first electrode layer, and is used to electrically connect to the second electrode.

  In a seventh possible realization method in combination with a sixth possible realization method in the first point, the light emitting device further comprises a second electrode layer. The second electrode layer is provided on a surface of the first conductive semiconductor layer away from the insulating layer, and the first electrode and the first conductive semiconductor are electrically connected by the second electrode layer. The The second pad penetrates the second electrode layer, and the insulating layer is further provided between the second electrode and the second electrode layer and between the second pad and the second electrode layer.

  In the eighth possible realization method in combination with the seventh possible realization method in the first point, the light emitting device further includes a reflective layer. The reflective layer is provided on a surface of the second electrode layer away from the first conductive type semiconductor layer, and the first electrode or the first pad penetrates the reflective layer and the second electrode or The second pad penetrates the reflective layer.

  As a second point, the light emitting device mounting body provided by the embodiment of the present invention includes a light emitting device. Specifically, the light emitting device includes a light emitting structure, a first electrode, a first electrode layer, a second electrode, and an insulating layer.

  The light emitting structure includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer that are stacked in order, wherein the second conductive type semiconductor layer is the light emitting structure. This is the light exit surface.

  The first electrode is provided on a surface of the first conductive semiconductor layer away from the active layer, and is electrically connected to the first conductive semiconductor layer.

  The first electrode layer is provided on a surface of the second conductive semiconductor layer away from the active layer, and is electrically connected to the second conductive semiconductor layer.

  The second electrode penetrates the light emitting structure and is electrically connected to the first electrode layer.

  The insulating layer is provided between the light emitting structure and the second electrode.

  In a first possible realization method in combination with the second point, the light emitting device further comprises a reflective layer. The reflective layer is provided on a surface of the first conductive semiconductor layer away from the active layer, and the first electrode and the second electrode penetrate the reflective layer.

  In the second possible realization method in combination with the second point, the light emitting device further comprises a transmission layer. The transmissive layer is provided on a surface of the first electrode layer away from the second conductive semiconductor layer, and the transmissive layer is used to improve a light extraction rate of the light emitting structure.

  In the third possible realization method in combination with the second possible realization method at the second point, the surface of the transmission layer away from the first electrode layer is uneven.

  In a fourth possible realization method in combination with the second point, the light emitting device further comprises a second electrode layer. The second electrode layer is provided on a surface of the first conductive semiconductor layer away from the insulating layer, and the first electrode and the first conductive semiconductor layer are electrically connected by the second electrode layer. Is done. The second electrode penetrates the second electrode layer, and the insulating layer is further provided between the second electrode and the second electrode layer.

  In a fifth possible realization method in combination with a fourth possible realization method at the second point, the light emitting device further comprises a reflective layer. The reflective layer is provided on a surface of the second electrode layer away from the first conductive semiconductor layer, and the first electrode and the second electrode penetrate the reflective layer.

  In the sixth possible realization method in combination with the second point, the light emitting structure further includes a first pad and a second pad. The first pad is provided on a surface of the first electrode away from the first conductive type semiconductor layer, and is used to electrically connect to the first electrode. The second pad is provided on a surface of the second electrode away from the first electrode layer, and is used to electrically connect to the second electrode.

  In a seventh possible realization method in combination with a sixth possible realization method in the second point, the light emitting device further comprises a second electrode layer. The second electrode layer is provided on a surface of the first conductive semiconductor layer away from the insulating layer, and the first electrode and the first conductive semiconductor are electrically connected by the second electrode layer. The The second pad penetrates the second electrode layer, and the insulating layer is further provided between the second electrode and the second electrode layer and between the second pad and the second electrode layer. .

  In the eighth possible realization method in combination with the seventh possible realization method in the second point, the light emitting device further includes a reflective layer. The reflective layer is provided on a surface of the second electrode layer away from the first conductive type semiconductor layer, and the first electrode or the first pad penetrates the reflective layer, and the second electrode or the The second pad penetrates the reflective layer.

  By realizing the light emitting device provided by the embodiment of the present invention, the two electrodes of the first electrode and the second electrode protrude from the back surface of the light emitting surface of the light emitting device. In other words, the conductive wire related to the first electrode and the second electrode absorbs light and can be prevented from being blocked, thereby improving the light emission rate. Furthermore, in the light emitting device of the present invention, a transmissive layer is provided on the upper surface of the first electrode layer, the light emitted by the transmissive layer can be made more uniform, and the upper surface of the transmissive layer is made uneven. As a result, the surface area of the transmission layer is increased, and the light extraction rate is improved. By providing the first electrode layer between the transmission layer and the second conductivity type semiconductor layer, the current transmitted from the second electrode can be uniformly dispersed in the second conductivity type semiconductor layer by the first electrode layer, By disposing the second electrode layer between the first electrode and the first conductivity type semiconductor layer, the current transmitted from the first electrode can be uniformly dispersed in the first conductivity type semiconductor layer by the second electrode layer. And the light emission performance of the light emitting structure is improved. A reflective layer is provided on the surface of the second electrode layer away from the first conductive type semiconductor layer, and the light emitting structure reflects light emitted from the first conductive type semiconductor layer to the light emitting surface of the light emitting structure. Thus, the light emission rate of the light emitting device is increased.

In order to explain the embodiments of the present invention or the conventional technical solutions more easily, the following briefly introduces the drawings necessary to describe the embodiments or the prior art. As can be seen, the drawings depicted below are only a part of the embodiments of the present invention, and other engineers based on these drawings can be used without creativity for general engineers in this area. It can be acquired.
It is the figure which showed the perspective structure of the light-emitting device which the Example of this invention provides. It is the figure which showed the structure of the AA 'cross section of FIG. 1 which the Example of this invention provides. It is the figure which showed the perspective structure of another light-emitting device which the Example of this invention provides. FIG. 4 is a diagram illustrating a structure of an AA ′ cross section of FIG. 3 provided by an embodiment of the present invention. It is the figure which showed the perspective structure of another light-emitting device which the Example of this invention provides. FIG. 6 is a diagram illustrating the structure of the AA ′ cross section of FIG. 5 provided by an embodiment of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is a process flow diagram of a light emitting device provided by an example of the present invention. It is the figure which showed the structure of mounting of the light-emitting device which the Example of this invention provides.

  In the following, the technical solutions in the embodiments of the present invention will be described in an easy-to-understand manner in combination with the drawings in the embodiments of the present invention. Apparently, the depicted embodiments are only a part of the embodiments of the present invention and not all embodiments. All other embodiments obtained based on the embodiment of the present invention on the assumption that a general engineer in this field does not use creativity shall be within the protection scope of the present invention. .

  It should be noted that the terminology used in the embodiments of the present invention is only for describing specific embodiments and is not intended to limit the present invention. The singular forms “one” and “above” used in the embodiments of the present invention and the accompanying patent specification shall also include the plural unless the context clearly dictates otherwise. Further, it should be understood that the terms “and / or” as used herein refer to any or all possible combinations including one or more associated listed items. In addition, the expressions such as “upper”, “lower”, “upper surface”, “lower surface”, “upper surface” and “lower surface” used in the description of this embodiment are all based on the light emitting direction of the light emitting device. I have to. For one specific part, the part facing the light emission direction can be called “upper”, “upper surface”, “upper surface”, etc., and the part facing the light emission direction is “lower”, “lower surface” , "Lower surface" etc.

  Please refer to FIG. 1 and FIG. FIG. 1 is a perspective view of a light emitting device provided by an embodiment of the present invention. FIG. 2 is a diagram illustrating the structure of the AA ′ cross section of FIG. 1 provided by the embodiment of the present invention. The light emitting device 10 includes a light emitting structure 13, a first electrode 16, a first electrode layer 12, a second electrode 18, and an insulating layer 17. The light emitting structure 13 is used to emit light after being energized. The light emitting structure 13 includes a first conductive semiconductor layer 133, an active layer 132, and a second conductive type that are stacked in order. A semiconductor layer 131 is provided. The first electrode 16 is provided on the surface of the first conductive semiconductor layer 133 away from the active layer 132, and is electrically connected to the first conductive semiconductor layer 133, whereby the light emitting structure is formed. Current is transmitted to the body 13. The first electrode layer 12 is provided on the surface of the second conductive semiconductor layer 131 away from the active layer 132, and is electrically connected to the second conductive semiconductor layer 131, whereby the light emission. Current is transmitted to the structure 13. The second electrode 18 penetrates the light emitting structure 13 and is electrically connected to the first electrode layer 12, thereby transmitting a current to the light emitting structure 13 through the first electrode layer 12. . The insulating layer 17 is provided between the light emitting structure 13 and the second electrode 18, thereby preventing the second electrode 18 from being directly electrically connected to the light emitting structure 13.

  In order to further complete the present embodiment, the light emitting device 10 further includes a transmissive layer 11, and the transmissive layer 11 is a surface of the first electrode layer 12 away from the second conductive semiconductor layer 131. The transmission layer 11 is used to improve the light extraction rate of the light emitting structure 13. The transmissive layer 11 is made of a transparent material and may be sapphire or resin, but is not limited here. The transmissive layer 11 is used to transmit light. Since the upper surface of the transmissive layer 11 can be formed into a pattern like a concavo-convex structure, the surface area of the transmissive layer is increased and the light extraction rate is improved.

  The light emitting device 10 further includes a first pad 19 and a second pad 20. The first pad 19 is provided at the center of the surface of the first electrode 16 away from the first conductive semiconductor layer 133, and is electrically connected to the first electrode 16. Used to send The second pad 20 is provided at the center of the surface of the second electrode 18 away from the first electrode layer 12, is electrically connected to the second electrode 18, and supplies current to the second electrode 20. Used to transmit.

  Specifically, based on the structure of the light-emitting device 10, the components included in the structure will be described in detail below in order. Furthermore, for ease of explanation, the light output direction is upward here. As is apparent, when the reference object changes, the orientation term in the present embodiment changes correspondingly.

  The first electrode layer 12 is provided on the lower surface of the transmission layer 11, and the first electrode layer 12 is a conductive material, and the conductive material has a light-transmitting performance such as Au, Al, Pd, Rh, and the like. . The thin films they form can not only conduct, but also allow light to pass through. The present invention does not limit the material.

  The light emitting structure 13 is provided on the surface of the first electrode layer 12 away from the transmission layer 11, that is, the lower surface of the first electrode layer 12. The light emitting structure 13 includes the first conductive semiconductor layer 133, the active layer, and the active layer. 132 and a second conductivity type semiconductor layer 131. Among them, the active layer 132 is provided on the first conductivity type semiconductor layer 133, and the second conductivity type semiconductor layer 131 is provided on the active layer 132. The first conductive semiconductor layer 133, the active layer 132, and the second conductive semiconductor layer 131 are electrically connected to form a component that can emit light. The components can emit light when energized after being connected to different electrodes on the upper and lower surfaces.

  Among these, the first conductive semiconductor layer 133 includes at least one semiconductor layer doped with the first type ions, and when the first conductive semiconductor layer 133 is an N-type semiconductor layer, the first conductive semiconductor layer 133 is GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP. When the first type ions are N-type ions, the first conductive semiconductor layer 133 may include Si, Ge, Sn, Se, or Te.

  The active layer 132 may include a III-V compound semiconductor. The active layer 132 includes at least one of a single quantum well structure, a multiple quantum well structure, a quantum line structure, or a quantum dot structure. The well layer / barrier layer of the active layer 132 may include a pair structure of InGaN / GaN, GaN / AlGaN, or InGaN / InGaN, but the embodiment is not limited thereto. The active layer 132 is made of a material having a band gap that depends on the wavelength of emitted light. For example, in the case of blue light having a wavelength of 460 to 470 nm, the active layer 132 has a single quantum well structure or a multiple quantum well structure including an InGaN well layer / GaN barrier layer. The active layer 132 may optionally comprise light capable of providing a visible radiation band, for example blue light, red light, green light material, said material being within the scope of the examples. Can be changed.

  The second conductive semiconductor layer 131 includes at least one semiconductor layer doped with a second species ion. When the second conductive semiconductor layer 131 is a P-type semiconductor layer, the second conductive semiconductor layer 131 is: At least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP can be provided. When the second species ions are P-type ions, the second conductive semiconductor layer 131 may include at least one of Mg, Zn, Ca, Sr, or Ba.

  Specifically, the upper surface of the second conductive semiconductor layer 131 in the light emitting structure 13 and the lower surface of the first electrode layer 12 are in contact with each other. Therefore, the current can be stably and uniformly diffused between the second conductive semiconductor layer 131 and the first electrode layer 12.

  The first electrode 16 and the light emitting structure 13 are electrically connected. Specifically, the first electrode 16 contacts the surface of the first conductive type semiconductor layer 133 in the light emitting structure 13 away from the active layer 132, so that the first electrode 16 and the first conductive type semiconductor layer are contacted. Between 133, the current is transmitted more evenly. The specific position where the first electrode 16 is in contact with the lower surface of the first conductivity type semiconductor layer 133 is not limited.

  The second electrode 18 is in contact with the first electrode layer 12. Specifically, the second electrode 18 penetrates the light emitting structure 13, contacts the surface of the first electrode layer 12 away from the transmissive layer 11, and forms an electrical connection, thereby forming the first electrode layer. 12 distributes the current to the second conductive type semiconductor layer 131. As a point to be described, the second electrode 18 penetrates the light emitting structure 13, but there is no electrical contact with the light emitting structure 13. Specifically, by providing the insulating layer 17 between the second electrode 18 and the light emitting structure 13, the second electrode 18 is not directly connected to the light emitting structure 13, but the second electrode layer 12. By indirectly connecting to the second conductive semiconductor layer 131 of the light emitting structure 13 by this, current transmission is realized.

  Materials used for the insulating layer 17 are insulating paint, insulating tape, insulating paper, insulating fiber product, plastic, rubber, paint cloth, paint tube, and insulation dipped fiber product, electroformed film, and composite product. An organic solid insulating material such as a tape or an electroformed laminated product is provided, but not limited thereto. Inorganic solid insulating materials are mainly mica, glass, ceramics, and other products.

  Furthermore, the material of the first electrode 16 and the second electrode 18 is Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Rh, Au, Ir, Pt, W, or Au. The material may be at least one or a mixture of materials, but the embodiment is not limited to the material. Furthermore, the bird's-eye view structure of each of the first electrode 16 and the second electrode 18 includes a linear pattern, a curved pattern, a mixed pattern of a linear pattern and a curved pattern, a plurality of patterns separated from one pattern, a polygonal pattern, and a grid pattern. A pattern, a dot pattern, a rhombus pattern, a parallelogram pattern, a grid pattern, a bar pattern, a cross pattern, a star pattern, a circular pattern, or a mixed pattern thereof, but is not limited thereto. The present embodiment is not limited to these. The first electrode 16 having a pattern can uniformly supply power to the first conductive semiconductor layer 133, thereby preventing current from being concentrated in one place. The second electrode 18 with the pattern can power the first electrode layer 12 uniformly, thereby preventing the current from concentrating in one place.

  Furthermore, since the first pad 19 can be formed below the first electrode 16, power can be transmitted stably. Since the lower part of the second electrode 18 can be connected to the second pad 20, power is stably transmitted. The first pad 19 and the second pad 20 are made of a material containing Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Rh, Au, Ir, Pt, W, or Au. be able to. This embodiment does not limit the material.

  Based on the above-described structure, by connecting the first pad 19 to the power supply positive electrode, the first pad 19 can acquire a current from the power supply, and the current is connected to the first pad 19. Transmit to the electrode 16. The first electrode 16 diffuses current to the first conductive semiconductor layer 133 in the light emitting structure 13 connected to the first electrode 16. Furthermore, the second conductive type semiconductor layer 131 of the light emitting structure 13 stably transmits current to the first electrode layer 12 connected to the second conductive type semiconductor layer 131, and further the current is transmitted by the first electrode layer 12. This is transmitted to the second electrode 18. Further, the current flows to the second pad 20, and the current is returned to the power source negative electrode by the second pad 20. Here, a closed circuit of current is formed. A current flows into the first conductive semiconductor layer 133 of the light emitting structure 13, and light is emitted from the second conductive semiconductor layer 131 when the current flows out. As a point to be described, which of the first electrode 16 and the second electrode 18 is specifically connected to the positive electrode and which is connected to the negative electrode is determined on the basis of the structure of the light emitting structure 13. Then, the electrode to which the first electrode 16 and the second electrode 18 are connected is not limited.

  When the light emitting device 10 shown in FIGS. 1 and 2 is employed as compared with the prior art, the two electrodes of the first electrode 16 and the second electrode 18 protrude from the back surface of the light emitting surface of the light emitting device 10. There is no need to further draw out a conducting wire from the light emitting surface, and the conducting wire related to the first electrode 16 and the second electrode 18 can absorb and block light, thereby improving the light emission rate. Furthermore, in the light emitting device 10 of the present invention, the transmissive layer 11 is provided on the upper surface of the first electrode layer 12, and the light emitted by the transmissive layer 11 can be made more uniform. Furthermore, since the upper surface of the transmission layer 11 can be made uneven, the surface area of the transmission layer 11 is increased, and the light extraction rate is improved.

  Please refer to FIG. 3 and FIG. FIG. 3 is a perspective view of another light emitting device provided by an embodiment of the present invention. FIG. 4 is a diagram showing the structure of the AA ′ cross section of FIG. 3 provided by the embodiment of the present invention. The light emitting device 10 includes a light emitting structure 13 included in the light emitting structure 10 illustrated in FIG. 2, a first electrode 16, a first electrode layer 12, a second electrode 18, an insulating layer 17, and a transmission layer 11. In addition to the first pad 19 and the second pad 20, a second electrode layer 14 is further provided. The second electrode layer 14 is provided on a surface of the first conductive semiconductor layer 133 away from the insulating layer. The first electrode 16 is connected to the first conductive semiconductor layer 133 by the second electrode layer 14. By transmitting the current uniformly to the one-conductivity-type semiconductor layer 133, the current does not concentrate on one transmission. Among them, the second electrode layer 14 covers the entire lower surface of the first conductive semiconductor layer 133. Further, a gap is provided in the second electrode layer 14, and the second pad 20 electrically connected to the second electrode 16 is connected to an external conductor by protruding from the gap. Further, the insulating layer 17 is provided between the second electrode layer 14 and the second pad 20, so that the light emitting device 10 caused by the electrical connection between the second electrode layer 14 and the second pad 20. The entire short circuit is prevented. As a point to be described, materials used for the second electrode layer 14 include, but are not limited to, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.

  Compared with the prior art, when the light emitting device 10 shown in FIGS. 3 to 4 is adopted, the two electrodes of the first electrode 16 and the second electrode 18 protrude from the back surface of the light emitting surface of the light emitting device 10. There is no need to further draw out a conducting wire from the light emitting surface, and the conducting wire related to the first electrode 16 and the second electrode 18 can absorb and block light, thereby improving the light emission rate. Furthermore, in the light emitting device 10 of the present invention, the transmissive layer 11 is provided on the upper surface of the first electrode layer 12, and the light emitted by the transmissive layer 11 can be made more uniform. Furthermore, since the upper surface of the transmission layer 11 can be made uneven, the surface area of the transmission layer 11 is increased, and the light extraction rate is improved. By providing the first electrode layer between the transmissive layer 11 and the second conductive semiconductor layer 131, the current transmitted from the second electrode 18 is uniformly applied to the second conductive semiconductor layer 131 by the first electrode layer 12. Can be dispersed. By providing the second electrode layer 14 between the first electrode 16 and the first conductive type semiconductor layer 133, the current transmitted from the first electrode 16 is uniformly supplied to the first conductive type semiconductor layer 133 by the second electrode layer 14. The light emission performance of the light emitting structure 13 is improved.

  Please refer to FIG. 5 and FIG. FIG. 5 is a perspective view of another light emitting device provided by the embodiment of the present invention. FIG. 6 is a view showing the structure of the AA ′ cross section of FIG. 5 provided by the embodiment of the present invention. The light emitting device 10 includes a light emitting structure 13 included in the light emitting structure 10 illustrated in FIG. 4, a first electrode 16, a first electrode layer 12, a second electrode 18, an insulating layer 17, and a transmission layer 11. In addition to the first pad 19, the second pad 20, and the second electrode layer 14, a reflective layer 15 is further provided. The reflective layer 15 is provided on the entire surface of the second electrode layer 14 away from the first conductive semiconductor layer 133, and is used for the light emitting structure 13 to reflect light emitted from the first conductive semiconductor layer 133. As a result, the light extraction rate of the light emitting device 10 is improved.

  Further, the reflective layer 15 is provided with two gaps, and the first electrode 16 or the first pad 19 protrudes from one of the gaps to be connected to an external conductor, and the second pad 20 has another gap. It is connected to an external conductor by protruding from.

  As a point to be described, the reflective layer 15 may be a metal material such as Al or Ag. When the metal material is used, an insulating layer 17 is further provided between the reflective layer 15 and the second pad 20. The reflective layer 15 can also be a polymer material such as PVC or PU. The embodiment of the present invention does not limit the material constituting the reflective layer 15. However, in the present embodiment, the material of the reflective layer 15 is preferably an insulating polymer. By always acting as a reflection in this way, it is further insulated from the outside, and safety is increased.

  Compared with the prior art, when the light emitting device 10 shown in FIGS. 5 to 6 is adopted, the two electrodes of the first electrode 16 and the second electrode 18 protrude from the back surface of the light emitting surface of the light emitting device 10, There is no need to further draw out a conducting wire from the light emitting surface, and the conducting wire related to the first electrode 16 and the second electrode 18 can absorb and block light, thereby improving the light emission rate. Furthermore, in the light emitting device 10 of the present invention, the transmissive layer 11 is provided on the upper surface of the first electrode layer 12, and the light emitted by the transmissive layer 11 can be made more uniform. Furthermore, since the upper surface of the transmission layer 11 can be made uneven, the surface area of the transmission layer 11 is increased and the light extraction rate is improved. By providing the first electrode layer between the transmissive layer 11 and the second conductive semiconductor layer 131, the current transmitted from the second electrode 18 is uniformly applied to the second conductive semiconductor layer 131 by the first electrode layer 12. Can be dispersed. By providing the second electrode layer 14 between the first electrode 16 and the first conductive type semiconductor layer 133, the current transmitted from the first electrode 16 is uniformly supplied to the first conductive type semiconductor layer 133 by the second electrode layer 14. The light emission performance of the light emitting structure 13 is improved. A reflective layer 15 is provided on the surface of the second electrode layer 14 away from the first conductive type semiconductor layer 133, and the light emitted from the first conductive type semiconductor layer 133 is emitted from the first conductive type semiconductor layer 133. By reflecting to the surface, the light output rate of the light emitting device 10 is improved.

  7 to 17 are process flow diagrams of the light emitting device provided by the embodiment of the present invention. The production process is for manufacturing the light emitting device 10 shown in FIGS.

  As shown in FIG. 7, the first electrode layer 12 is formed on the transmissive layer 11. The first electrode layer 12 is configured by a thin film formed of Au, Al, or the like, so that light can pass through and the conductive performance is provided.

  A light emitting structure 13 is formed on the first electrode layer 12, and the light emitting structure 13 includes, in order, a stacked first conductive semiconductor layer 133, an active layer 132, and a second conductive semiconductor layer 131. Prepare.

  An active layer 132 is formed on the first conductivity type semiconductor layer 133. The active layer 132 may include a III-V compound semiconductor. The active layer 132 may have at least one of a single quantum well structure, a multiple quantum well structure, a quantum line structure, and a quantum point structure. The well layer / barrier layer of the active layer 132 may include a pair structure of InGaN / GaN, GaN / AlGaN, or InGaN / InGaN, but the embodiment is not limited thereto.

  A first conductive coating can be provided in the active layer 132. A second conductive coating can be provided in the active layer 132. The first conductive coating and the second conductive coating can include a GaN-based semiconductor, and the band gap is higher than the band gap of the active layer 132.

  The active layer 132 can comprise a material that emits color light, for example blue light, red light, or green light, which can be varied within the technical scope of the examples.

  A second conductive semiconductor layer 131 is formed on the active layer 132. The second conductive semiconductor layer 131 includes at least one semiconductor layer doped with a second species ion and a second electrode contact layer. When the second conductive type semiconductor layer 131 is a P type semiconductor layer, the second conductive type semiconductor layer 131 is composed of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. At least one of the following. When the second species ions are P-type ions, the second conductive semiconductor layer 131 may include at least one of Mg, Zn, Ca, Sr, and Ba.

  As shown in FIG. 8, a first groove 134 is provided in the light emitting structure 13 by an etching production process, and the first groove 134 is connected to the light emitting structure 13 by being one through cavity of the light emitting structure 13. The first electrode layer 12 is exposed.

  As shown in FIG. 9, the first groove 134 is used to arrange the second electrode 18 and electrically connects the second electrode 18 and the first electrode layer 12. Among these, a first gap 135 is generated between the light emitting structure 13 and the second electrode 18.

  As shown in FIG. 10, the first gap 135 is filled with the insulating layer 17. By fixing the second electrode 18 in the light emitting structure 13, the first gap 135 and the first electrode layer 12 are Simultaneously with the electrical connection, the light emitting structure 13 is insulated. Materials used for the insulating layer 17 are insulating paint, insulating tape, insulating paper, insulating fiber product, plastic, rubber, paint cloth, paint tube, and insulation dipped fiber product, electroformed film, and composite product. An organic solid insulating material such as a tape or an electroformed laminated product is provided, but not limited thereto. Inorganic solid insulating materials are mainly mica, glass, ceramics, and other products. This embodiment does not limit the material used for the insulating layer 17.

  As shown in FIG. 11, the second electrode layer 14 is coated on the light emitting structure 13 and the insulating layer 17. Materials used for the second electrode layer 14 include, but are not limited to, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.

  As shown in FIG. 12, the second groove 141 is provided on the second electrode layer 14 by an etching production process. The second groove 141 passes through the second electrode layer 14 and the insulating layer 17 in contact with the second electrode layer 14 to expose the second electrode 18.

  As shown in FIG. 13, a second pad 20 is installed in the second groove 141, and one end of the second pad 20 and the exposed second electrode 18 are electrically connected. Another end of the second pad 20 protrudes from the surface of the second electrode layer 14. Among these, a second gap 142 is formed between the second pad 20 and the first electrode layer 14.

  As shown in FIG. 14, the second pad 20 and the second electrode layer 14 are formed in the second gap 142, that is, between the second pad 20 and the second electrode layer 14 by coating the insulating layer 17. This prevents the entire light emitting device 10 from being short-circuited.

  As shown in FIG. 15, the first electrode 16 is coated on the first electrode layer 14 using an electroplating process.

  As shown in FIG. 15, the first pad 19 is coated on the first electrode 16 using an electroplating process.

  As shown in FIG. 17, the reflective layer 15 is coated on the portion where the upper surface of the first electrode layer 14 is in contact with other structures. The thickness of the reflective layer 15 is not limited.

  As a point to be described, in the above-described embodiment, the connection portion between the layers can be uneven, thereby increasing the adhesion of the connection. The thickness of each layer is not limited here. The thickness is set based on actual needs. Furthermore, the flow of the production process described above is only one example that can be selected. As is apparent, other production processes can achieve the same effect based on the light emitting device 10 of the present invention. Here, an example is not given one by one.

  FIG. 18 is a side sectional view of a light emitting device mounting body 50 provided by an embodiment of the present invention. A specific structure for coupling the light emitting device will be described below.

  Please refer to FIG. The light emitting device mounting body 50 is provided in the main body 51, the first conductive electrode 52 and the second conductive electrode 53 provided on the main body 51, and the first conductive electrode 52 and the second conductive electrode 53. 1 to 6 that are electrically connected to each other, and a molded part 54 that surrounds the light emitting device 10.

  The main body 51 can include PPA such as silicon or synthetic resin, or a metal material. An inclined surface can be formed around the light emitting device 10. The body 51 can have a hollow structure with an open top. The light emitting device 10 can be provided in the cavity.

   The first conductor electrode 52 and the second conductor electrode 53 are insulated from each other and supply power to the light emitting device 10. The first conductive wire electrode 52 and the second conductive wire electrode 53 can release heat from the light emitting device 10 to the outside.

  The light emitting device 10 can be mounted on the main body 51. Alternatively, it can be mounted on the first conductor electrode 52 and the second conductor electrode 53.

  Since the light emitting device 10 is held on the conducting wires (52 and 53) by the first pad and the second pad, the contact area between the light emitting device 10 and the main body 51 is reduced, which is advantageous for heat radiation of the conducting wire.

  The molded part 54 protects the light emitting device 10 by surrounding the light emitting device 10. The molded part 54 changes the wavelength of light emitted from the light emitting device 10 by including a phosphor. A lens is formed on the molded part 54.

  The light emitting device 10 in all the above-described embodiments can be used as a light source by being mounted on a semiconductor substrate containing resin or silicon, an insulating substrate, or a ceramic substrate. Used in devices, lighting fixtures, display devices, etc. Each embodiment is selectively compatible with another embodiment.

  In summary, by adopting the light emitting device 10 of the present invention, the two electrodes of the first electrode 16 and the second electrode 18 protrude from the back surface of the light emitting surface of the light emitting device 10, so Therefore, it is possible to prevent the conductive wires related to the first electrode 16 and the second electrode 18 from absorbing and blocking light, thereby improving the light emission rate. Furthermore, in the light emitting device 10 of the present invention, the transmissive layer 11 is provided on the upper surface of the first electrode layer 12, and the light emitted by the transmissive layer 11 can be made more uniform. Furthermore, since the upper surface of the transmission layer 11 can be made uneven, the surface area of the transmission layer 11 is increased and the light extraction rate is improved. By providing the first electrode layer between the transmissive layer 11 and the second conductive semiconductor layer 131, the current transmitted from the second electrode 18 is uniformly applied to the second conductive semiconductor layer 131 by the first electrode layer 12. Can be dispersed. By providing the second electrode layer 14 between the first electrode 16 and the first conductive type semiconductor layer 133, the current transmitted from the first electrode 16 is uniformly supplied to the first conductive type semiconductor layer 133 by the second electrode layer 14. The light emission performance of the light emitting structure 13 is improved. A reflective layer 15 is provided on the surface of the second electrode layer 14 away from the first conductive type semiconductor layer 133, and the light emitted from the first conductive type semiconductor layer 133 is emitted from the first conductive type semiconductor layer 133. By reflecting to the surface, the light output rate of the light emitting device 10 is improved.

  What has been disclosed above is only a relatively preferred embodiment of the present invention, and it should be understood that this does not limit the scope of the present invention. It shall be possible to understand and carry out all or part of the steps of the example. Furthermore, equivalent changes made based on the scope of the present invention shall also fall within the scope of the present invention.

DESCRIPTION OF SYMBOLS 10 Light emitting device 11 Transmission layer 12 1st electrode layer 13 Light emitting structure 16 1st electrode 17 Insulating layer 18 2nd electrode 19 1st pad 20 2nd pad 131 2nd conductivity type semiconductor layer 132 Active layer 133 1st conductivity type semiconductor layer

Claims (18)

A light emitting device comprising a light emitting structure, a first electrode, a first electrode layer, a second electrode, and an insulating layer,
The light emitting structure includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer that are stacked in order, wherein the second conductive type semiconductor layer is the light emitting structure. The light exit surface of
The first electrode is provided on a surface of the first conductive semiconductor layer away from the active layer, and is electrically connected to the first conductive semiconductor layer.
The first electrode layer is provided on a surface of the second conductive semiconductor layer away from the active layer, and is electrically connected to the second conductive semiconductor layer,
The second electrode penetrates the light emitting structure and is electrically connected to the first electrode layer,
The light emitting device, wherein the insulating layer is provided between the light emitting structure and the second electrode. The light emitting device further includes a reflective layer,
The reflective layer is provided on a surface of the first conductive semiconductor layer away from the active layer,
The light emitting device according to claim 1, wherein the first electrode and the second electrode penetrate the reflective layer. The light emitting device further includes a transmission layer,
The transmission layer is provided on a surface of the first electrode layer away from the second conductive semiconductor layer;
The light emitting device according to claim 1, wherein the transmissive layer is used to improve a light extraction rate of the light emitting structure. 4. The light emitting device according to claim 3, wherein a surface of the transmissive layer away from the first electrode layer is uneven. 5. The light emitting device further includes a second electrode layer,
The second electrode layer is provided on a surface of the first conductivity type semiconductor layer away from the insulating layer,
The first electrode and the first conductive semiconductor layer are electrically connected by the second electrode layer,
The second electrode penetrates the second electrode layer;
The light emitting device according to claim 1, wherein the insulating layer is further provided between the second electrode and the second electrode layer. The light emitting device further includes a reflective layer,
The reflective layer is provided on a surface of the second electrode layer away from the first conductive semiconductor layer;
The light emitting device according to claim 5, wherein the first electrode and the second electrode penetrate the reflective layer. The light emitting structure further includes a first pad and a second pad,
The first pad is provided on a surface of the first electrode away from the first conductive type semiconductor layer, and the first pad is used to electrically connect to the first electrode.
The second pad is provided on a surface of the second electrode away from the first electrode layer, and the second pad is used for electrical connection with the second electrode. The light emitting device according to claim 1. The light emitting device further includes a second electrode layer,
The second electrode layer is provided on a surface of the first conductivity type semiconductor layer away from the insulating layer,
The first electrode and the first conductivity type semiconductor are electrically connected by the second electrode layer,
The second pad penetrates the second electrode layer;
The light emitting device according to claim 7, wherein the insulating layer is further provided between the second electrode and the second electrode layer and between the second pad and the second electrode layer. The light emitting device further includes a reflective layer,
The reflective layer is provided on a surface of the second electrode layer away from the first conductive type semiconductor layer, and the first electrode or the first pad penetrates the reflective layer, and the second electrode or the The light emitting device according to claim 8, wherein the second pad penetrates the reflective layer. A light emitting device mounting body comprising a light emitting device, wherein the light emitting device comprises a light emitting structure, a first electrode, a first electrode layer, a second electrode, and an insulating layer,
The light emitting structure includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer that are stacked in order, and the second conductive type semiconductor layer includes the second conductive type semiconductor layer of the light emitting structure. The light exit surface,
The first electrode is provided on a surface of the first conductive semiconductor layer away from the active layer, and is electrically connected to the first conductive semiconductor layer.
The first electrode layer is provided on a surface of the second conductive semiconductor layer away from the active layer, and is electrically connected to the second conductive semiconductor layer,
The second electrode penetrates the light emitting structure and is electrically connected to the first electrode layer;
The said insulating layer is provided between the said light emitting structure and the said 2nd electrode. The light-emitting device mounting body characterized by the above-mentioned. The light emitting device further includes a reflective layer,
The reflective layer is provided on a surface of the first conductive semiconductor layer away from the active layer,
The light emitting device mounting body according to claim 10, wherein the first electrode and the second electrode penetrate the reflective layer. The light emitting device further includes a transmission layer,
The transmission layer is provided on a surface of the first electrode layer away from the second conductive semiconductor layer;
The light-emitting device package according to claim 10, wherein the transmissive layer is used to improve a light extraction rate of the light-emitting structure. The light emitting device mounting body according to claim 12, wherein a surface of the transmissive layer apart from the first electrode layer is uneven. The light emitting device further includes a second electrode layer,
The second electrode layer is provided on a surface of the first conductivity type semiconductor layer away from the insulating layer,
The first electrode and the first conductive type semiconductor layer are electrically connected by the second electrode layer, the second electrode penetrates the second electrode layer,
The light emitting device package according to claim 10, wherein the insulating layer is further provided between the second electrode and the second electrode layer. The light emitting device further includes a reflective layer,
The reflective layer is provided on a surface of the second electrode layer away from the first conductive semiconductor layer;
The light emitting device package according to claim 14, wherein the first electrode and the second electrode penetrate the reflective layer. The light emitting structure further includes a first pad and a second pad,
The first pad is provided on a surface of the first electrode away from the first conductive type semiconductor layer, and the first pad is used to electrically connect to the first electrode.
The second pad is provided on a surface of the second electrode away from the first electrode layer, and the second pad is used for electrical connection with the second electrode. The light emitting device mounting body according to claim 10. The light emitting device further includes a second electrode layer,
The second electrode layer is provided on a surface of the first conductive semiconductor layer away from the insulating layer, and the first electrode and the first conductive semiconductor are electrically connected by the second electrode layer. The second pad penetrates the second electrode layer;
The light emitting device mounting according to claim 16, wherein the insulating layer is further provided between the second electrode and the second electrode layer and between the second pad and the second electrode layer. body. The light emitting device further includes a reflective layer,
The reflective layer is provided on a surface of the second electrode layer away from the first conductive type semiconductor layer, and the first electrode or the first pad penetrates the reflective layer, and the second electrode or the The light emitting device mounting body according to claim 17, wherein the second pad penetrates the reflective layer.