JP6457613B2 - 有機発光表示装置 - Google Patents
有機発光表示装置 Download PDFInfo
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- JP6457613B2 JP6457613B2 JP2017214184A JP2017214184A JP6457613B2 JP 6457613 B2 JP6457613 B2 JP 6457613B2 JP 2017214184 A JP2017214184 A JP 2017214184A JP 2017214184 A JP2017214184 A JP 2017214184A JP 6457613 B2 JP6457613 B2 JP 6457613B2
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- 230000005540 biological transmission Effects 0.000 claims description 17
- 239000003086 colorant Substances 0.000 claims 3
- 239000010408 film Substances 0.000 description 116
- 239000010410 layer Substances 0.000 description 39
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000002834 transmittance Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 12
- 239000002346 layers by function Substances 0.000 description 12
- 238000002161 passivation Methods 0.000 description 10
- 238000007789 sealing Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 229910052779 Neodymium Inorganic materials 0.000 description 5
- 229910052769 Ytterbium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L23/53233—Copper alloys
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H10K50/00—Organic light-emitting devices
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- H10K50/00—Organic light-emitting devices
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H10K2102/3023—Direction of light emission
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Description
って、ユーザは歪曲されたイメージを伝達される。これは、前記パターン間の間隔が数百
nmレベルであるため、可視光波長と同一レベルになって透過された光の散乱を引き起こ
すからである。
2,2’ 有機発光表示装置、
11 第1面、
21 有機発光部、
23 密封基板、
24 密封材、
25 空間、
26 密封フィルム、
211 バッファ膜、
212a,212b 第1及び第2半導体活性層、
213 ゲート絶縁膜、
214a,214b 第1及び第2ゲート電極、
215 層間絶縁膜、
216a,216b 第1及び第2ソース電極、
217a,217b 第1及び第2ドレイン電極、
218 パッシベーション膜、
219 画素定義膜、
221 第1ピクセル電極、
222 第2ピクセル電極、
223,223’ 第1及び第2有機膜、
224 第1対向電極、
225 第2対向電極、
230 透視窓、
231 第1透視窓、
232 第2透視窓、
PA1 第1発光領域、
PA2 第2発光領域、
TA 透過領域、
PC ピクセル回路部、
S スキャンライン、
Cst キャパシタ、
D データライン、
V Vddライン、
T1,T2 第1及び第2TFT、
T3,T4 第1及び第2発光TFT。
Claims (8)
- 異なる色を発光する複数のサブピクセルであって、前記異なる色を発光する複数のサブピクセルのそれぞれが、
前面発光を行う第1有機発光素子を含む第1発光領域と、
前記第1発光領域と重畳せずに前記第1発光領域に隣接して位置し、背面発光を行う第2有機発光素子を含む第2発光領域と、
前記第1発光領域及び前記第2発光領域と重畳せずに前記第1発光領域及び前記第2発光領域に隣接して位置し、外光が透過するように構成された透過領域と、を備える前記異なる色を発光する複数のサブピクセルと、
前記第1有機発光素子及び前記第2有機発光素子と電気的に連結されたピクセル回路部と、
前記ピクセル回路部にデータ信号、スキャン信号、及び電源をそれぞれ供給するデータライン、スキャンライン、及び電源ラインと、を備え、
前記ピクセル回路部は、
前記第1有機発光素子に電気的に連結された第1発光TFTと、
前記第2有機発光素子に電気的に連結された第2発光TFTと、
第1TFTと、
第2TFTと、を備え、
前記ピクセル回路部は、前記データライン、前記スキャンライン、及び前記電源ラインに電気的に連結され、
前記第1TFTは、前記第2TFTに電気的に連結され、
前記第2TFTは、前記第1及び第2発光TFTに電気的に連結され、
前記第1及び第2発光TFTのゲート電極は、互いに異なる発光信号ラインにそれぞれ電気的に連結される、有機発光表示装置。 - 前記ピクセル回路部は、前記第1発光領域と重畳して配置され、前記第2発光領域と重畳しないように配置されていることを特徴とする請求項1に記載の有機発光表示装置。
- 前記第1有機発光素子は、光を反射するように構成された第1ピクセル電極を含むことを特徴とする請求項1または2に記載の有機発光表示装置。
- 前記第2有機発光素子は、光を透過するように構成された第2ピクセル電極を含むことを特徴とする請求項1〜3のいずれか1項に記載の有機発光表示装置。
- 前記ピクセル回路部は、前記第1有機発光素子と前記第2有機発光素子とを独立して駆動することを特徴とする請求項1〜4のいずれか1項に記載の有機発光表示装置。
- 前記第1発光TFTの第1電極は前記第2TFTに電気的に連結され、前記第1発光TFTの第2電極は前記第1有機発光素子に電気的に連結され、
前記第2発光TFTの第1電極は前記第2TFTに電気的に連結され、前記第2発光TFTの第2電極は前記第2有機発光素子に電気的に連結されたことを特徴とする請求項1〜5のいずれか1項に記載の有機発光表示装置。 - 前記第1有機発光素子と前記第2有機発光素子とは、同じ色相の光を発光することを特徴とする請求項1〜6のいずれか1項に記載の有機発光表示装置。
- 前記透過領域に位置する透視窓をさらに備えることを特徴とする請求項1〜7のいずれか1項に記載の有機発光表示装置。
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