JP5933928B2 - 有機発光表示装置 - Google Patents
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- JP5933928B2 JP5933928B2 JP2011055689A JP2011055689A JP5933928B2 JP 5933928 B2 JP5933928 B2 JP 5933928B2 JP 2011055689 A JP2011055689 A JP 2011055689A JP 2011055689 A JP2011055689 A JP 2011055689A JP 5933928 B2 JP5933928 B2 JP 5933928B2
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
2 ディスプレイ部
3 充填材
11 第1面
21 有機発光部
23 第2基板
24 密封材
25 間の空間
26 密封フィルム
211 バッファ膜
212a,212b 第1及び2半導体活性層
213 ゲート絶縁膜
216a,216b 第1及び2ソース電極
219 画素定義膜
220a 下部電極
220b 上部電極
221 画素電極
222 対向電極
223 有機膜
224 第1透過ウィンドウ
225 第2透過ウィンドウ
226 第3透過ウィンドウ
227 第4透過ウィンドウ
231 第1導電部
232 第2導電部
233 引込部
V Vddライン
PA 画素領域
TA 透過領域
TR1,2 第1及び2TFT
PC 画素回路部
S スキャンライン
Cst キャパシタ
D データライン
Claims (20)
- 透過領域と、前記透過領域を介して相互離隔された複数の画素領域とが区画された第1基板と、
前記第1基板上に形成され、前記各画素領域内に位置する複数の薄膜トランジスタと、
前記複数の薄膜トランジスタを覆うパッシベーション膜と、
前記パッシベーション膜上に前記各薄膜トランジスタと電気的に連結されるように形成され、前記各画素領域内に位置し、前記各薄膜トランジスタを覆うことができるように、前記各薄膜トランジスタと重畳されるように配された複数の画素電極と、
前記複数の画素電極と対向し、前記透過領域及び画素領域にわたって位置する対向電極と、
前記画素電極と対向電極との間に介されて発光する有機発光層と、
前記対向電極と対向するように配され、前記基板と接合される第2基板と、
前記第2基板と対向電極との間に介され、両端がそれぞれ前記第2基板及び対向電極に接し、導電性物質で備えられた第1導電部と、
前記対向電極を介して前記第1導電部と対向し、前記対向電極に接し、導電性物質で備えられる第2導電部と、を備え、
前記対向電極は前記第1導電部と前記第2導電部との間に挿入され、前記第1導電部と前記第2導電部は、それぞれ前記対向電極の上面及び下面に直接接触し、
前記第1導電部と前記第2導電部とは前記透過領域のみに配置される
ことを特徴とする有機発光表示装置。 - 前記画素電極の面積は、前記画素領域のうち一つの面積と同じであることを特徴とする請求項1に記載の有機発光表示装置。
- 前記各薄膜トランジスタと電気的に連結された複数の導電ラインをさらに備え、前記導電ラインのうち少なくとも一つは、前記各画素電極と重畳されるように配列されたことを特徴とする請求項1に記載の有機発光表示装置。
- 前記透過領域の面積は、前記画素領域と前記透過領域との面積の和に対して、5%ないし90%の範囲内であることを特徴とする請求項1に記載の有機発光表示装置。
- 前記パッシベーション膜は、前記透過領域及び画素領域のいずれにも形成され、透明な物質で備えられたことを特徴とする請求項1に記載の有機発光表示装置。
- 前記第1導電部及び第2導電部は、少なくとも一部が前記透過領域に重畳されるように配されたことを特徴とする請求項1に記載の有機発光表示装置。
- 前記第1導電部は、前記第2基板の前記対向電極に向く面に形成されたことを特徴とする請求項1に記載の有機発光表示装置。
- 前記パッシベーション膜上に前記画素電極のエッジを覆う絶縁膜がさらに備えられ、前記第2導電部は、前記絶縁膜上に形成されたことを特徴とする請求項1に記載の有機発光表示装置。
- 前記対向電極は、前記透過領域の少なくとも一部に対応するように開口された透過ウィンドウをさらに備え、前記第1導電部及び第2導電部は、前記透過ウィンドウに隣接して配されたことを特徴とする請求項1に記載の有機発光表示装置。
- 前記画素電極は、反射電極であることを特徴とする請求項1に記載の有機発光表示装置。
- 透過領域と、前記透過領域を介して相互離隔された複数の画素領域とが区画された第1基板と、
前記第1基板上に形成され、それぞれ少なくとも一つの薄膜トランジスタを備え、前記各画素領域内に位置する複数の画素回路部と、
前記画素回路部を覆う第1絶縁膜と、
前記第1絶縁膜上に前記各画素回路部と電気的に連結されるように形成され、前記各画素回路部を覆うことができるように、前記各画素回路部と重畳されるように配された複数の画素電極と、
前記複数の画素電極と対向し、前記透過領域及び画素領域にわたって位置する対向電極と、
前記画素電極と対向電極との間に介されて発光する有機発光層と、
前記対向電極と対向するように配され、前記基板と接合される第2基板と、
前記第2基板と対向電極との間に介され、両端がそれぞれ前記第2基板及び対向電極に接し、導電性物質で備えられた第1導電部と、
前記対向電極を介して前記第1導電部と対向し、前記対向電極に接し、導電性物質で備えられる第2導電部と、を備え、
前記対向電極は前記第1導電部と前記第2導電部との間に挿入され、前記第1導電部と前記第2導電部は、それぞれ前記対向電極の上面及び下面に直接接触し、
前記第1導電部と前記第2導電部とは前記透過領域のみに配置される
有機発光表示装置。 - 前記画素電極は、前記各画素領域と同じ領域に形成されたことを特徴とする請求項11に記載の有機発光表示装置。
- 前記各画素回路部と電気的に連結された複数の導電ラインをさらに備え、前記各導電ラインのうち少なくとも一つは、前記各画素領域を通過するように配列されたことを特徴とする請求項11に記載の有機発光表示装置。
- 前記透過領域の面積は、前記画素領域と前記透過領域との面積の和に対して、5%ないし90%の範囲内であることを特徴とする請求項11に記載の有機発光表示装置。
- 前記透過領域及び画素領域には、前記第1絶縁膜及び複数の第2絶縁膜が配され、前記第1絶縁膜及び第2絶縁膜は、透明な物質で備えられたことを特徴とする請求項11に記載の有機発光表示装置。
- 前記第1導電部及び第2導電部は、少なくとも一部が前記透過領域に重畳されるように配されたことを特徴とする請求項11に記載の有機発光表示装置。
- 前記第1導電部は、前記第2基板の前記対向電極に向く面に形成されたことを特徴とする請求項11に記載の有機発光表示装置。
- 前記第1絶縁膜上に前記画素電極のエッジを覆う第2絶縁膜がさらに備えられ、前記第2導電部は、前記第2絶縁膜上に形成されたことを特徴とする請求項11に記載の有機発光表示装置。
- 前記対向電極は、前記透過領域の少なくとも一部に対応するように開口された透過ウィンドウをさらに備え、前記第1導電部及び第2導電部は、前記透過ウィンドウに隣接して配されたことを特徴とする請求項11に記載の有機発光表示装置。
- 前記画素電極は、反射電極であることを特徴とする請求項11に記載の有機発光表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2010-0063868 | 2010-07-02 | ||
KR1020100063868A KR101193195B1 (ko) | 2010-07-02 | 2010-07-02 | 유기 발광 표시 장치 |
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JP2012015092A JP2012015092A (ja) | 2012-01-19 |
JP5933928B2 true JP5933928B2 (ja) | 2016-06-15 |
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US (1) | US8569762B2 (ja) |
JP (1) | JP5933928B2 (ja) |
KR (1) | KR101193195B1 (ja) |
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