JP6456956B2 - 不純物が積層したエピタキシーのための装置 - Google Patents

不純物が積層したエピタキシーのための装置 Download PDF

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JP6456956B2
JP6456956B2 JP2016536104A JP2016536104A JP6456956B2 JP 6456956 B2 JP6456956 B2 JP 6456956B2 JP 2016536104 A JP2016536104 A JP 2016536104A JP 2016536104 A JP2016536104 A JP 2016536104A JP 6456956 B2 JP6456956 B2 JP 6456956B2
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processing chamber
gas
fluid line
operable
substrate
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JP2016528739A (ja
JP2016528739A5 (enExample
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エロール アントニオ シー． サンチェス，
エロール アントニオ シー． サンチェス，
スワミナタン スリニバサン，
スワミナタン スリニバサン，
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016536104A 2013-08-19 2014-07-28 不純物が積層したエピタキシーのための装置 Active JP6456956B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361867385P 2013-08-19 2013-08-19
US61/867,385 2013-08-19
PCT/US2014/048506 WO2015026491A1 (en) 2013-08-19 2014-07-28 Apparatus for impurity layered epitaxy

Publications (3)

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JP2016528739A JP2016528739A (ja) 2016-09-15
JP2016528739A5 JP2016528739A5 (enExample) 2017-09-07
JP6456956B2 true JP6456956B2 (ja) 2019-01-23

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JP2016536104A Active JP6456956B2 (ja) 2013-08-19 2014-07-28 不純物が積層したエピタキシーのための装置

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Country Link
US (1) US9856580B2 (enExample)
JP (1) JP6456956B2 (enExample)
KR (1) KR102076087B1 (enExample)
CN (1) CN105493229B (enExample)
TW (1) TWI649465B (enExample)
WO (1) WO2015026491A1 (enExample)

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US9856580B2 (en) * 2013-08-19 2018-01-02 Applied Materials, Inc. Apparatus for impurity layered epitaxy
CN114975176A (zh) * 2016-04-25 2022-08-30 应用材料公司 用于自组装单层工艺的化学输送腔室
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
KR102408720B1 (ko) 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
WO2020027993A1 (en) * 2018-08-03 2020-02-06 Applied Materials, Inc. Multizone lamp control and individual lamp control in a lamphead
KR102848536B1 (ko) * 2018-08-06 2025-08-21 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 라이너
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN119465090A (zh) 2020-04-20 2025-02-18 应用材料公司 具有共用的气体输送和排气系统的多个热cvd腔室
CN120138791A (zh) * 2023-12-12 2025-06-13 中微半导体设备(上海)股份有限公司 一种进气装置及气相沉积设备

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Also Published As

Publication number Publication date
JP2016528739A (ja) 2016-09-15
TW201518563A (zh) 2015-05-16
CN105493229A (zh) 2016-04-13
US9856580B2 (en) 2018-01-02
KR102076087B1 (ko) 2020-02-11
WO2015026491A1 (en) 2015-02-26
CN105493229B (zh) 2019-04-05
KR20160043115A (ko) 2016-04-20
US20150047566A1 (en) 2015-02-19
TWI649465B (zh) 2019-02-01

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