KR102076087B1 - 불순물 적층 에피택시를 위한 장치 - Google Patents

불순물 적층 에피택시를 위한 장치 Download PDF

Info

Publication number
KR102076087B1
KR102076087B1 KR1020167007100A KR20167007100A KR102076087B1 KR 102076087 B1 KR102076087 B1 KR 102076087B1 KR 1020167007100 A KR1020167007100 A KR 1020167007100A KR 20167007100 A KR20167007100 A KR 20167007100A KR 102076087 B1 KR102076087 B1 KR 102076087B1
Authority
KR
South Korea
Prior art keywords
gas
process chamber
fluid line
disposed
dopants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167007100A
Other languages
English (en)
Korean (ko)
Other versions
KR20160043115A (ko
Inventor
에롤 안토니오 씨. 산체스
스와미나싼 스리니바산
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20160043115A publication Critical patent/KR20160043115A/ko
Application granted granted Critical
Publication of KR102076087B1 publication Critical patent/KR102076087B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020167007100A 2013-08-19 2014-07-28 불순물 적층 에피택시를 위한 장치 Active KR102076087B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361867385P 2013-08-19 2013-08-19
US61/867,385 2013-08-19
PCT/US2014/048506 WO2015026491A1 (en) 2013-08-19 2014-07-28 Apparatus for impurity layered epitaxy

Publications (2)

Publication Number Publication Date
KR20160043115A KR20160043115A (ko) 2016-04-20
KR102076087B1 true KR102076087B1 (ko) 2020-02-11

Family

ID=52465895

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167007100A Active KR102076087B1 (ko) 2013-08-19 2014-07-28 불순물 적층 에피택시를 위한 장치

Country Status (6)

Country Link
US (1) US9856580B2 (enExample)
JP (1) JP6456956B2 (enExample)
KR (1) KR102076087B1 (enExample)
CN (1) CN105493229B (enExample)
TW (1) TWI649465B (enExample)
WO (1) WO2015026491A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9856580B2 (en) * 2013-08-19 2018-01-02 Applied Materials, Inc. Apparatus for impurity layered epitaxy
CN114975176A (zh) * 2016-04-25 2022-08-30 应用材料公司 用于自组装单层工艺的化学输送腔室
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
KR102408720B1 (ko) 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
WO2020027993A1 (en) * 2018-08-03 2020-02-06 Applied Materials, Inc. Multizone lamp control and individual lamp control in a lamphead
KR102848536B1 (ko) * 2018-08-06 2025-08-21 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 라이너
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN119465090A (zh) 2020-04-20 2025-02-18 应用材料公司 具有共用的气体输送和排气系统的多个热cvd腔室
CN120138791A (zh) * 2023-12-12 2025-06-13 中微半导体设备(上海)股份有限公司 一种进气装置及气相沉积设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085887A (en) 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
US20020192369A1 (en) 2000-10-24 2002-12-19 Masahiro Morimoto Vapor deposition method and apparatus
US6927140B2 (en) 2002-08-21 2005-08-09 Intel Corporation Method for fabricating a bipolar transistor base
KR100800377B1 (ko) 2006-09-07 2008-02-01 삼성전자주식회사 화학기상증착설비
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000138168A (ja) * 1998-10-29 2000-05-16 Shin Etsu Handotai Co Ltd 半導体ウェーハ及び気相成長装置
US6886491B2 (en) * 2001-03-19 2005-05-03 Apex Co. Ltd. Plasma chemical vapor deposition apparatus
JP3527914B2 (ja) * 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
US7537662B2 (en) * 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
JP4399517B2 (ja) * 2004-01-05 2010-01-20 株式会社堀場製作所 成膜装置と成膜方法
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
JP4498986B2 (ja) * 2005-06-22 2010-07-07 東京エレクトロン株式会社 基板処理装置および基板処理方法ならびにコンピュータ読取可能な記憶媒体
US8088248B2 (en) * 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP2008007838A (ja) * 2006-06-30 2008-01-17 Horiba Ltd 成膜装置及び成膜方法
US20080017116A1 (en) 2006-07-18 2008-01-24 Jeffrey Campbell Substrate support with adjustable lift and rotation mount
US8287647B2 (en) * 2007-04-17 2012-10-16 Lam Research Corporation Apparatus and method for atomic layer deposition
KR101013655B1 (ko) 2008-07-04 2011-02-10 엘지전자 주식회사 이동 단말기의 방송서비스 표시장치 및 방법
KR20100047573A (ko) * 2008-10-29 2010-05-10 주성엔지니어링(주) 기판처리장치
CN102301458B (zh) * 2009-01-31 2016-01-20 应用材料公司 用于蚀刻的方法和设备
US20100267230A1 (en) * 2009-04-16 2010-10-21 Anand Chandrashekar Method for forming tungsten contacts and interconnects with small critical dimensions
JP5546296B2 (ja) * 2010-03-12 2014-07-09 スタンレー電気株式会社 気相成長装置、材料ガス層流を基板上に水平に供給するノズル、及び気相成長方法
KR101573733B1 (ko) * 2010-11-29 2015-12-04 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
US20120199887A1 (en) * 2011-02-03 2012-08-09 Lana Chan Methods of controlling tungsten film properties
KR101884003B1 (ko) * 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 증착 챔버를 위한 라이너 조립체
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9032990B2 (en) 2011-04-25 2015-05-19 Applied Materials, Inc. Chemical delivery system
JP6022908B2 (ja) * 2012-01-16 2016-11-09 東京エレクトロン株式会社 処理装置及びバルブ動作確認方法
US8853080B2 (en) * 2012-09-09 2014-10-07 Novellus Systems, Inc. Method for depositing tungsten film with low roughness and low resistivity
WO2014179014A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Inject and exhaust design for epi chamber flow manipulation
US9856580B2 (en) * 2013-08-19 2018-01-02 Applied Materials, Inc. Apparatus for impurity layered epitaxy

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085887A (en) 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
US20020192369A1 (en) 2000-10-24 2002-12-19 Masahiro Morimoto Vapor deposition method and apparatus
US6927140B2 (en) 2002-08-21 2005-08-09 Intel Corporation Method for fabricating a bipolar transistor base
KR100800377B1 (ko) 2006-09-07 2008-02-01 삼성전자주식회사 화학기상증착설비
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics

Also Published As

Publication number Publication date
JP2016528739A (ja) 2016-09-15
TW201518563A (zh) 2015-05-16
CN105493229A (zh) 2016-04-13
US9856580B2 (en) 2018-01-02
JP6456956B2 (ja) 2019-01-23
WO2015026491A1 (en) 2015-02-26
CN105493229B (zh) 2019-04-05
KR20160043115A (ko) 2016-04-20
US20150047566A1 (en) 2015-02-19
TWI649465B (zh) 2019-02-01

Similar Documents

Publication Publication Date Title
KR102076087B1 (ko) 불순물 적층 에피택시를 위한 장치
US11537151B2 (en) Multi-channel flow ratio controller and processing chamber
CN105164788B (zh) 具有空间分布的气体通道的气流控制衬垫
US20090194024A1 (en) Cvd apparatus
US20110290175A1 (en) Multi-Chamber CVD Processing System
CN105164309A (zh) 用于控制外延沉积腔室流量的注入及排放设计
TW201704523A (zh) 用於半導體外延成長的注射器
JPH0891989A (ja) 化学蒸着に関する改良
JP2015534283A (ja) カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ
TW201809343A (zh) 用於在基板上連續沉積多個層的裝置和方法，以及於沉積裝置中使用的容置單元
TWI423383B (zh) Substrate support for the III-V film growth reaction chamber, its reaction chamber and process treatment
TW201216330A (en) Processing systems and apparatuses having a shaft cover
WO2012120991A1 (ja) 基板処理装置、及び、基板の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
A302 Request for accelerated examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7