CN105493229B - 用于杂质分层外延法的设备 - Google Patents

用于杂质分层外延法的设备 Download PDF

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Publication number
CN105493229B
CN105493229B CN201480045552.2A CN201480045552A CN105493229B CN 105493229 B CN105493229 B CN 105493229B CN 201480045552 A CN201480045552 A CN 201480045552A CN 105493229 B CN105493229 B CN 105493229B
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gas
switching valve
dopant
processing chamber
equipment
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Chinese (zh)
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CN105493229A (zh
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埃罗尔·安东尼奥·C·桑切斯
斯瓦米纳坦·斯里尼瓦桑
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN201480045552.2A 2013-08-19 2014-07-28 用于杂质分层外延法的设备 Active CN105493229B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361867385P 2013-08-19 2013-08-19
US61/867,385 2013-08-19
PCT/US2014/048506 WO2015026491A1 (en) 2013-08-19 2014-07-28 Apparatus for impurity layered epitaxy

Publications (2)

Publication Number Publication Date
CN105493229A CN105493229A (zh) 2016-04-13
CN105493229B true CN105493229B (zh) 2019-04-05

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CN201480045552.2A Active CN105493229B (zh) 2013-08-19 2014-07-28 用于杂质分层外延法的设备

Country Status (6)

Country Link
US (1) US9856580B2 (enExample)
JP (1) JP6456956B2 (enExample)
KR (1) KR102076087B1 (enExample)
CN (1) CN105493229B (enExample)
TW (1) TWI649465B (enExample)
WO (1) WO2015026491A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015026491A1 (en) * 2013-08-19 2015-02-26 Applied Materials, Inc. Apparatus for impurity layered epitaxy
KR20180128515A (ko) * 2016-04-25 2018-12-03 어플라이드 머티어리얼스, 인코포레이티드 자기-조립 단분자층 프로세스들을 위한 화학물질 전달 챔버
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
KR102408720B1 (ko) 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버
KR102717559B1 (ko) * 2018-01-29 2024-10-14 어플라이드 머티어리얼스, 인코포레이티드 Pvd 프로세스들에서의 입자 감소를 위한 프로세스 키트 기하형상
WO2020027993A1 (en) * 2018-08-03 2020-02-06 Applied Materials, Inc. Multizone lamp control and individual lamp control in a lamphead
WO2020033097A1 (en) * 2018-08-06 2020-02-13 Applied Materials, Inc. Liner for processing chamber
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
WO2021216260A1 (en) 2020-04-20 2021-10-28 Applied Materials, Inc. Multi-thermal cvd chambers with shared gas delivery and exhaust system
CN120138791A (zh) * 2023-12-12 2025-06-13 中微半导体设备(上海)股份有限公司 一种进气装置及气相沉积设备

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US5085887A (en) * 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
CN1375575A (zh) * 2001-03-19 2002-10-23 株式会社Apex 化学气相沉积设备
US20020192369A1 (en) * 2000-10-24 2002-12-19 Masahiro Morimoto Vapor deposition method and apparatus
CN1579011A (zh) * 2002-03-27 2005-02-09 财团法人地球环境产业技术研究机构 Cvd设备以及使用cvd设备清洗cvd设备的方法
US6927140B2 (en) * 2002-08-21 2005-08-09 Intel Corporation Method for fabricating a bipolar transistor base
CN101496144A (zh) * 2006-01-11 2009-07-29 朗姆研究公司 用于气体分配系统的包括具有不同流量系数的阀门的气体切换部分
US8058170B2 (en) * 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics

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US5085887A (en) * 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
US20020192369A1 (en) * 2000-10-24 2002-12-19 Masahiro Morimoto Vapor deposition method and apparatus
CN1375575A (zh) * 2001-03-19 2002-10-23 株式会社Apex 化学气相沉积设备
CN1579011A (zh) * 2002-03-27 2005-02-09 财团法人地球环境产业技术研究机构 Cvd设备以及使用cvd设备清洗cvd设备的方法
US6927140B2 (en) * 2002-08-21 2005-08-09 Intel Corporation Method for fabricating a bipolar transistor base
CN101496144A (zh) * 2006-01-11 2009-07-29 朗姆研究公司 用于气体分配系统的包括具有不同流量系数的阀门的气体切换部分
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Also Published As

Publication number Publication date
JP2016528739A (ja) 2016-09-15
WO2015026491A1 (en) 2015-02-26
JP6456956B2 (ja) 2019-01-23
TWI649465B (zh) 2019-02-01
KR102076087B1 (ko) 2020-02-11
KR20160043115A (ko) 2016-04-20
TW201518563A (zh) 2015-05-16
CN105493229A (zh) 2016-04-13
US9856580B2 (en) 2018-01-02
US20150047566A1 (en) 2015-02-19

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