JP6449766B2 - 光電子デバイス用透明電極 - Google Patents
光電子デバイス用透明電極 Download PDFInfo
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- JP6449766B2 JP6449766B2 JP2015519470A JP2015519470A JP6449766B2 JP 6449766 B2 JP6449766 B2 JP 6449766B2 JP 2015519470 A JP2015519470 A JP 2015519470A JP 2015519470 A JP2015519470 A JP 2015519470A JP 6449766 B2 JP6449766 B2 JP 6449766B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L2031/0344—Organic materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
非有機太陽電池セルとは対照的に、有機太陽電池セルの場合は、光によって直接電荷キャリアが生成されるのではなく、まずエキシトン、すなわち電気的に中性な励起状態(束縛された電子−正孔対)が形成される。漸く第2のステップにおいて、これらのエキシトンは、自由電荷キャリアに分離され、これらはこうして電流フローに寄与する。
0. 担体,基板
1. 基板側接続部(Grundkontakt)、通常透明
2. p層(複数でもよい)
3. i層(複数でもよい)
4. n層(複数でもよい)
5. 上側接続部(Deckkontakt)
このタンデムセルは、たとえばpinpin構造(またはたとえばnipnipであってもよい)を備える。上記の2つのpin部分セルの間の界面には、それぞれに1つのnドーピングされた層と1つのpドーピングされた層が存在し、これらはpn系(あるいはnp系)を形成している。このようなpn系においては、電子と正孔との極めて効率的な再結合が起こる。2つのpinユニットセルの積層は、これによって、さらなる層を必要とせずに、そのまま1つの完全なpinタンデムセルを形成する。ここで、平本の場合のように、効率的な再結合を確実にするための、薄い金属層がもはや必要でないということは、とりわけ有利である。これによってこのような薄い金属層の吸収損失を完全に避けることができる。
さらに加えてこの論文には、このAg層の下に、このAg層の平坦化のために薄いAlの中間層を用いることを開示している。またここには、トップコンタクトの透明性を高めるために、この薄いAg層上に有機層を用いることが示されている。
1)熱的蒸着に対して、これらの代替の堆積方法を用いて、より平坦な層を生成することができ、極めて薄い層において、基板の平面に既に高い導電性を有する閉じた層を実現することができる。僅かな層厚のおかげで、この層の高い透過性が達成され、同時に(この平面における)充分な導電性が達成される。2)熱的蒸着に対して、上記の堆積方法を用いて、基板上の層厚の高度な均一性をもたらすことができる。これは薄いトップコンタクト層の場合は特に重要である。これは上記の第2の層の層厚における変化がデバイスの性能に直接影響を与え、このデバイスの光学的効果の目に見える変化をもたらすからであり、これは一般的に好ましいものでない。3)これらの代替の堆積方法を用いることによって、熱的蒸着に対して、さらに多数の様々な材料を、(たとえば反応性スパッタリングの)プロセスパラメータを大きく変化させて用いることができる。
この層がデバイスの層間の応力を低減するのに寄与すると考えられる。このような層間の応力は、たとえば異なる熱膨張係数(膨張係数等)のために生じ得るが、これは最も深刻な場合には部分的または全体的な層の剥離をもたらし得る。
小分子とは、本発明での意味は、蒸発されて基板上に堆積することができるものである。
ここでワイドギャップ層とは450nmより短い波長領域で吸収ピークを有する層のことである。
ここでこれらの実施形態例は、本発明を説明するものであるが、本発明を限定するものではない。
2 第1の層
3 第1の中間層
4 第2の層
5 スクラッチ保護層
6 第2の中間層
7 第3の中間層
Claims (14)
- 第1および第2の電極を備えた基板上の有機太陽電池セルであって、
前記第1の電極は、前記基板上に配設されており、前記第2の電極は対向電極を形成し、
前記第1の電極と前記第2の電極との間に、少なくとも1つの光活性な層系が配設されており、当該層系は、有機材料を含む少なくとも1つのドナー−アクセプター系を備え、
前記対向電極(1)は、少なくとも1つの第1の層(2)と、当該第1の層(2)と前記有機太陽電池セルの前記光活性な層系との間に配設されている1つの第1の中間層(3)と、当該第1の層(2)上に配設されている1つの第2の層(4)とを備え、前記第1の中間層(3)と前記対向電極の前記第1の層(2)との間に、金属または金属酸化物からなる第2の中間層(6)が挿入されており、当該第2の中間層(6)は、0.05〜30nmの層厚を有し、当該第1の層(2)は、銀、または銀を含む合金を含み、当該第1の中間層(3)はCa,Mg,またはMoOxを含み、当該第2の層(4)は、10〜100nmの層厚および2より大きい屈折率を有し、
前記対向電極(1)と前記光活性な層系の間には、1つの、ドーピングされた輸送層,部分的にドーピングされた輸送層,またはドーピングされていない輸送層が配設されている、
ことを特徴とする有機太陽電池セル。 - 前記第1の層(2)は、AgおよびCaから成る合金、またはAgおよびMgから成る合金を含むことを特徴とする、請求項1に記載の有機太陽電池セル。
- 前記第1の層(2)は、AgおよびCaから成る合金、またはAgおよびMgから成る合金を含み、AgまたはCaまたはMgの割合は、少なくとも30%であることを特徴とする、請求項1または2に記載の有機太陽電池セル。
- 前記対向電極の前記第1の中間層(3)は、0.1〜100nmの層厚の熱蒸着層を有することを特徴とする、請求項1乃至3のいずれか1項に記載の有機太陽電池セル。
- 前記対向電極(1)の前記第1の層(2)は、3〜20nmの層厚を有することを特徴とする、請求項1乃至4のいずれか1項に記載の有機太陽電池セル。
- 前記対向電極(1)の前記第1の層(2)は、5〜10nmの層厚を有することを特徴とする、請求項1乃至5のいずれか1項に記載の有機太陽電池セル。
- 前記第2の層(4)は、アルカリ金属またはアルカリ土類金属,金属酸化物または有機材料を含むことを特徴とする、請求項1乃至6のいずれか1項に記載の有機太陽電池セル。
- 前記第2の層(4)は、窒化物,セレン化物,硫化物,酸化物,テルル化物,またはポリマーを含むことを特徴とする、請求項1乃至7のいずれか1項に記載の有機太陽電池セル。
- 前記第2の層(4)は、2.2より大きい屈折率を有することを特徴とする、請求項1乃至8のいずれか1項に記載の有機太陽電池セル。
- 前記第2の層(4)上に、酸化物を含みかつ層厚が100nmより大きい保護層(5)が配設されていることを特徴とする、請求項1乃至9のいずれか1項に記載の有機太陽電池セル。
- 前記対向電極(1)の前記第1の層(2)と前記第2の層(4)との間には、金属または金属酸化物から成るもう1つの中間層(7)が挿入されていることを特徴とする、請求項1乃至10のいずれか1項に記載の有機太陽電池セル。
- 前記基板は不透明または透明に実装されていることを特徴とする、請求項1乃至11のいずれか1項に記載の有機太陽電池セル。
- 前記基板は可撓に実装されていることを特徴とする、請求項1乃至12のいずれか1項に記載の有機太陽電池セル。
- 前記有機太陽電池セルは、pinシングルセル,pinタンデムセル,pin多層セル,nipシングルセル,nipタンデムセル,またはnip多層セルであることを特徴とする、請求項1乃至13のいずれか1項に記載の有機太陽電池セル。
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