JP6447841B2 - チタン酸バリウム系半導体セラミック、チタン酸バリウム系半導体セラミック組成物および温度検知用正特性サーミスタ - Google Patents
チタン酸バリウム系半導体セラミック、チタン酸バリウム系半導体セラミック組成物および温度検知用正特性サーミスタ Download PDFInfo
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
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Description
20.0≦a≦22.5のとき、12.5≦b≦17.5
22.5≦a≦25.0のとき、12.5≦b≦15.0
とし、TiおよびMnの合計含有モル部を100としたときの、Mnの含有モル部cを、0.030≦c≦0.045
としている。
Tiを100モル部としたときの、Caの含有モル部x、Srの含有モル部y、Mnの含有モル部zが、
20≦x≦25
19≦y≦25
0.01≦z≦0.03
を満たし、かつ、
0.01≦z<0.019のとき、y≧−0.8x+37
0.021<z≦0.03のとき、y≦−x+48
を満たす。
本発明の有効性を確認するために、次の実験をおこなった。
上述した実施形態の方法により、組成の異なる102通りのチタン酸バリウム系半導体セラミックを作製した。そして、それらの半導体セラミックを使用して、図1に示すような、いわゆるバルク型の正特性サーミスタを作製して本実験の試料とした。
TR100≦75℃
{α10-100/log(ρ25)}≧10
表において、試料番号に※の付されていないものが本発明の範囲内であり、※の付されたものは本発明の範囲外である。
実験1の試料106、206、306はいずれも、Caの含有量xが20モル部、Srの含有量yが19モル部である。ただし、Mnの含有量zは異なり、試料106は0.01モル部、試料206は0.02モル部、試料306は0.03モル部である。
2a、2b・・・外部電極
11・・・半導体セラミック層
12a、12b・・・内部電極
13・・・積層体
14a、14b・・・外部電極
100・・・実施形態にかかる正特性サーミスタ
Claims (3)
- 主成分として、Ba、Ca、SrおよびTiを含むペロブスカイト型化合物を含み、更にR(RはY、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luから選ばれる少なくとも1種)、MnおよびSiを含むチタン酸バリウム系半導体セラミックであって、
当該チタン酸バリウム系半導体セラミックを溶解した場合に、Tiを100モル部としたときの、Caの含有モル部x、Srの含有モル部y、Mnの含有モル部zが、
20≦x≦25
19≦y≦25
0.01≦z≦0.03
であり、かつ、
0.01≦z<0.019のとき、y≧−0.8x+37
0.021<z≦0.03のとき、y≦−x+48
であり、
不純物として含まれる場合を除き、Pbが含まれていないことを特徴とするチタン酸バリウム系半導体セラミック。 - 焼成されることにより、請求項1に記載されたチタン酸バリウム系半導体セラミックが形成されることを特徴とするチタン酸バリウム系半導体セラミック組成物。
- 請求項1に記載されたチタン酸バリウム系半導体セラミックからなるセラミック素体と、当該セラミック素体の外表面に形成された外部電極と、を備えたことを特徴とする温度検知用正特性サーミスタ。
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JP2014239174 | 2014-11-26 | ||
JP2014239174 | 2014-11-26 | ||
PCT/JP2015/081042 WO2016084562A1 (ja) | 2014-11-26 | 2015-11-04 | チタン酸バリウム系半導体セラミック、チタン酸バリウム系半導体セラミック組成物および温度検知用正特性サーミスタ |
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JPWO2016084562A1 JPWO2016084562A1 (ja) | 2017-09-21 |
JP6447841B2 true JP6447841B2 (ja) | 2019-01-09 |
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EP (1) | EP3202747B1 (ja) |
JP (1) | JP6447841B2 (ja) |
CN (1) | CN107001151B (ja) |
TW (1) | TWI618686B (ja) |
WO (1) | WO2016084562A1 (ja) |
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CN107793153B (zh) * | 2017-11-20 | 2018-07-03 | 首凯汽车零部件(江苏)有限公司 | 一种复合型热敏电阻材料及其制备方法和应用 |
CN108947523A (zh) * | 2018-10-10 | 2018-12-07 | 贵州大学 | 一种高性能ptc热敏陶瓷的制备工艺 |
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JPS57157502A (en) * | 1981-03-24 | 1982-09-29 | Murata Manufacturing Co | Barium titanate series porcelain composition |
JP2558357B2 (ja) * | 1989-02-22 | 1996-11-27 | セントラル硝子株式会社 | チタン酸バリウム系半導体磁器用粉未およびその製造法 |
EP0415428B1 (en) * | 1989-08-31 | 1994-06-08 | Central Glass Company, Limited | Powder composition for sintering into modified barium titanate semiconductive ceramic |
JPH0388770A (ja) * | 1989-08-31 | 1991-04-15 | Central Glass Co Ltd | チタン酸バリウム系半導体磁器組成物並びにサーミスター |
JPH0818865B2 (ja) * | 1990-01-16 | 1996-02-28 | 株式会社村田製作所 | チタン酸バリウム系半導体磁器組成物 |
JP3319314B2 (ja) * | 1996-11-20 | 2002-08-26 | 株式会社村田製作所 | チタン酸バリウム系半導体磁器組成物 |
JP3039513B2 (ja) * | 1998-05-12 | 2000-05-08 | 株式会社村田製作所 | チタン酸バリウム粉末、および半導体セラミック、ならびに半導体セラミック素子 |
JP2000095562A (ja) * | 1998-07-24 | 2000-04-04 | Murata Mfg Co Ltd | 正特性サ―ミスタ用原料組成物、正特性サ―ミスタ用磁器、および正特性サ―ミスタ用磁器の製造方法 |
JP3855611B2 (ja) * | 2000-07-21 | 2006-12-13 | 株式会社村田製作所 | 半導体セラミック及び正特性サーミスタ |
CN102245535A (zh) * | 2008-12-12 | 2011-11-16 | 株式会社村田制作所 | 半导体陶瓷及正特性热敏电阻 |
KR101289808B1 (ko) * | 2008-12-12 | 2013-07-26 | 가부시키가이샤 무라타 세이사쿠쇼 | 반도체 세라믹 및 정특성 서미스터 |
CN103889926B (zh) * | 2011-11-01 | 2015-07-01 | 株式会社村田制作所 | Ptc热敏电阻器及ptc热敏电阻器的制造方法 |
-
2015
- 2015-11-04 EP EP15863565.6A patent/EP3202747B1/en active Active
- 2015-11-04 JP JP2016561470A patent/JP6447841B2/ja active Active
- 2015-11-04 WO PCT/JP2015/081042 patent/WO2016084562A1/ja active Application Filing
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- 2015-11-11 TW TW104137236A patent/TWI618686B/zh active
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JPWO2016084562A1 (ja) | 2017-09-21 |
EP3202747B1 (en) | 2020-12-23 |
TW201628995A (zh) | 2016-08-16 |
CN107001151A (zh) | 2017-08-01 |
WO2016084562A1 (ja) | 2016-06-02 |
EP3202747A4 (en) | 2018-05-30 |
TWI618686B (zh) | 2018-03-21 |
CN107001151B (zh) | 2020-03-03 |
EP3202747A1 (en) | 2017-08-09 |
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