JP6438648B2 - 半導体発光装置およびその製造方法 - Google Patents

半導体発光装置およびその製造方法 Download PDF

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Publication number
JP6438648B2
JP6438648B2 JP2013236935A JP2013236935A JP6438648B2 JP 6438648 B2 JP6438648 B2 JP 6438648B2 JP 2013236935 A JP2013236935 A JP 2013236935A JP 2013236935 A JP2013236935 A JP 2013236935A JP 6438648 B2 JP6438648 B2 JP 6438648B2
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Prior art keywords
light
semiconductor
emitting device
semiconductor layer
light emitting
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Japanese (ja)
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JP2015097235A (ja
JP2015097235A5 (enExample
Inventor
将嗣 市川
将嗣 市川
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Nichia Corp
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Nichia Corp
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Priority to JP2013236935A priority Critical patent/JP6438648B2/ja
Priority to US14/542,271 priority patent/US10211379B2/en
Priority to EP14193319.2A priority patent/EP2874190B1/en
Priority to CN201410653499.6A priority patent/CN104659172B/zh
Publication of JP2015097235A publication Critical patent/JP2015097235A/ja
Publication of JP2015097235A5 publication Critical patent/JP2015097235A5/ja
Priority to US16/116,841 priority patent/US10777715B2/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/814Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/034Manufacture or treatment of coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8515Wavelength conversion means not being in contact with the bodies

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JP2013236935A 2013-11-15 2013-11-15 半導体発光装置およびその製造方法 Active JP6438648B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013236935A JP6438648B2 (ja) 2013-11-15 2013-11-15 半導体発光装置およびその製造方法
US14/542,271 US10211379B2 (en) 2013-11-15 2014-11-14 Semiconductor light emitting device and method for manufacturing the same
EP14193319.2A EP2874190B1 (en) 2013-11-15 2014-11-14 Semiconductor light emitting device having light extraction surface perpendicular to the surface of the stacked semiconductor layer and method for manufacturing the same
CN201410653499.6A CN104659172B (zh) 2013-11-15 2014-11-17 半导体发光装置及其制造方法
US16/116,841 US10777715B2 (en) 2013-11-15 2018-08-29 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013236935A JP6438648B2 (ja) 2013-11-15 2013-11-15 半導体発光装置およびその製造方法

Publications (3)

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JP2015097235A JP2015097235A (ja) 2015-05-21
JP2015097235A5 JP2015097235A5 (enExample) 2016-10-20
JP6438648B2 true JP6438648B2 (ja) 2018-12-19

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JP2013236935A Active JP6438648B2 (ja) 2013-11-15 2013-11-15 半導体発光装置およびその製造方法

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US (2) US10211379B2 (enExample)
EP (1) EP2874190B1 (enExample)
JP (1) JP6438648B2 (enExample)
CN (1) CN104659172B (enExample)

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CN106549094B (zh) * 2015-09-18 2020-03-10 新世纪光电股份有限公司 发光元件封装结构
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Also Published As

Publication number Publication date
EP2874190B1 (en) 2019-09-18
JP2015097235A (ja) 2015-05-21
US10211379B2 (en) 2019-02-19
CN104659172A (zh) 2015-05-27
CN104659172B (zh) 2019-04-02
US20150137164A1 (en) 2015-05-21
US20190019927A1 (en) 2019-01-17
US10777715B2 (en) 2020-09-15
EP2874190A1 (en) 2015-05-20

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