CN104659172B - 半导体发光装置及其制造方法 - Google Patents
半导体发光装置及其制造方法 Download PDFInfo
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- CN104659172B CN104659172B CN201410653499.6A CN201410653499A CN104659172B CN 104659172 B CN104659172 B CN 104659172B CN 201410653499 A CN201410653499 A CN 201410653499A CN 104659172 B CN104659172 B CN 104659172B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 261
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000605 extraction Methods 0.000 claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 claims description 60
- 238000006243 chemical reaction Methods 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 38
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 16
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 229920001187 thermosetting polymer Polymers 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 13
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052593 corundum Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- -1 rare earth aluminate Chemical class 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 5
- 150000002602 lanthanoids Chemical class 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- 150000004645 aluminates Chemical class 0.000 claims description 2
- 229910052586 apatite Inorganic materials 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 177
- 229910052738 indium Inorganic materials 0.000 description 8
- 230000004907 flux Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
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- 238000002156 mixing Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
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- 239000000945 filler Substances 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
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- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- RLMMPAFGVXFLEB-UHFFFAOYSA-N O[Si](O)(O)Cl.P Chemical compound O[Si](O)(O)Cl.P RLMMPAFGVXFLEB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
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- 238000007772 electroless plating Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013236935A JP6438648B2 (ja) | 2013-11-15 | 2013-11-15 | 半導体発光装置およびその製造方法 |
| JP2013-236935 | 2013-11-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104659172A CN104659172A (zh) | 2015-05-27 |
| CN104659172B true CN104659172B (zh) | 2019-04-02 |
Family
ID=51893946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410653499.6A Active CN104659172B (zh) | 2013-11-15 | 2014-11-17 | 半导体发光装置及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10211379B2 (enExample) |
| EP (1) | EP2874190B1 (enExample) |
| JP (1) | JP6438648B2 (enExample) |
| CN (1) | CN104659172B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160038094A (ko) * | 2014-09-26 | 2016-04-07 | 코닝정밀소재 주식회사 | 발광 다이오드의 색변환용 기판 및 그 제조방법 |
| CN106549094B (zh) * | 2015-09-18 | 2020-03-10 | 新世纪光电股份有限公司 | 发光元件封装结构 |
| KR102417181B1 (ko) | 2015-11-09 | 2022-07-05 | 삼성전자주식회사 | 발광 패키지, 반도체 발광 소자, 발광 모듈 및 발광 패키지의 제조 방법 |
| JP6645213B2 (ja) * | 2016-01-27 | 2020-02-14 | オムロン株式会社 | 発光装置、および発光装置の製造方法 |
| JP6414104B2 (ja) | 2016-02-29 | 2018-10-31 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP6315014B2 (ja) * | 2016-03-23 | 2018-04-25 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
| DE102016109308B4 (de) | 2016-05-20 | 2024-01-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes bauelement |
| JP6575436B2 (ja) * | 2016-05-31 | 2019-09-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP6245587B1 (ja) | 2016-10-28 | 2017-12-13 | 大学共同利用機関法人自然科学研究機構 | レーザー部品 |
| JP6809203B2 (ja) | 2016-12-20 | 2021-01-06 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| EP3454386B1 (en) | 2017-07-21 | 2020-11-25 | Maven Optronics Co., Ltd. | Asymmetrically shaped light-emitting device, backlight module using the same, and method for manufacturing the same |
| TWI644056B (zh) * | 2017-07-21 | 2018-12-11 | 行家光電股份有限公司 | 具非對稱結構的發光裝置、包含該發光裝置之背光模組及該發光裝置之製造方法 |
| CN109411590B (zh) * | 2017-08-17 | 2020-01-07 | 光宝光电(常州)有限公司 | 发光二极管结构及发光单元 |
| EP3457444A1 (en) * | 2017-09-19 | 2019-03-20 | ams AG | Phosphor-converted light-emitting device |
| JP6909695B2 (ja) * | 2017-10-02 | 2021-07-28 | 株式会社小糸製作所 | 波長変換部材および光源モジュール |
| KR102412985B1 (ko) * | 2017-10-10 | 2022-06-24 | 루미레즈 엘엘씨 | 변환기 제한을 포함하는 led 패키지 |
| JP6743801B2 (ja) * | 2017-10-27 | 2020-08-19 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| DE102018106972B4 (de) | 2018-03-23 | 2024-05-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement mit reflektiver vergussmasse und verfahren zur herstellung eines optoelektronischen bauelements |
| US10651351B1 (en) * | 2018-11-13 | 2020-05-12 | Cree, Inc. | Light emitting diode packages |
| JP6876274B2 (ja) * | 2018-11-14 | 2021-05-26 | 日亜化学工業株式会社 | 発光素子、発光装置及び発光素子の製造方法 |
| DE102018132651A1 (de) * | 2018-12-18 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil |
| JP7508358B2 (ja) * | 2020-12-10 | 2024-07-01 | シチズン電子株式会社 | 発光装置 |
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| CN201754416U (zh) * | 2010-07-09 | 2011-03-02 | 戴美惠 | 具有提升反射效率的led发光载体结构 |
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| CN102637802A (zh) * | 2011-02-14 | 2012-08-15 | 斯坦雷电气株式会社 | 发光装置及其制造方法 |
| JP2013143430A (ja) * | 2012-01-10 | 2013-07-22 | Citizen Holdings Co Ltd | 半導体発光装置及びそれを用いた照明装置 |
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| JP2005166937A (ja) * | 2003-12-02 | 2005-06-23 | Toyoda Gosei Co Ltd | 発光装置 |
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- 2014-11-14 EP EP14193319.2A patent/EP2874190B1/en active Active
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| Publication number | Publication date |
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| EP2874190B1 (en) | 2019-09-18 |
| JP2015097235A (ja) | 2015-05-21 |
| US10211379B2 (en) | 2019-02-19 |
| CN104659172A (zh) | 2015-05-27 |
| US20150137164A1 (en) | 2015-05-21 |
| US20190019927A1 (en) | 2019-01-17 |
| US10777715B2 (en) | 2020-09-15 |
| EP2874190A1 (en) | 2015-05-20 |
| JP6438648B2 (ja) | 2018-12-19 |
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