JP6645213B2 - 発光装置、および発光装置の製造方法 - Google Patents
発光装置、および発光装置の製造方法 Download PDFInfo
- Publication number
- JP6645213B2 JP6645213B2 JP2016013708A JP2016013708A JP6645213B2 JP 6645213 B2 JP6645213 B2 JP 6645213B2 JP 2016013708 A JP2016013708 A JP 2016013708A JP 2016013708 A JP2016013708 A JP 2016013708A JP 6645213 B2 JP6645213 B2 JP 6645213B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- molded body
- resin molded
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000011347 resin Substances 0.000 claims description 80
- 229920005989 resin Polymers 0.000 claims description 80
- 239000000463 material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 25
- 238000010586 diagram Methods 0.000 description 22
- 229910000679 solder Inorganic materials 0.000 description 16
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 6
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 6
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 6
- 238000001746 injection moulding Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
- G02B6/0083—Details of electrical connections of light sources to drivers, circuit boards, or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0068—Arrangements of plural sources, e.g. multi-colour light sources
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
- G02B6/0086—Positioning aspects
- G02B6/009—Positioning aspects of the light source in the package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
- H01L2224/251—Disposition
- H01L2224/2518—Disposition being disposed on at least two different sides of the body, e.g. dual array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Description
さらに、溝または孔の加工スペース、あるいはダミー部材または組立部材の設置スペースが必要になるため、発光装置が大型化してしまうといった問題がある。さらに、プリント基板に追加工を施したり、組立部材を作製するために製造コストが上昇したり、製造工程が複雑で製造歩留りを低下させてしまうといった問題もある。
本発明に係る実施形態1について、図1および2を参照して以下に説明する。
図1に示す発光装置1は、従来技術に係る発光装置では必要であるプリント基板を有しておらず、かつ、配線と電極(陽極、陰極)と接続するためのはんだ材料も必要としない。これにより、発光装置1の小型化および薄型化に寄与する次のような効果が得られる。
発光装置1は、LED素子3〜6以外の発光素子、たとえば有機EL素子等を備えている構成であってもよい。
本発明に係る実施形態2について、図3〜5を参照して以下に説明する。なお、説明の便宜上、前記実施形態において説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を省略する。
図5は、本実施形態に係る発光装置1aを製造する方法を説明する図である。この図を参照して、本実施形態に係る発光装置1aの製造方法を以下に説明する。
まず、図5の(a)に示すように、LED素子3〜6を仮固定するための仮固定フィルム11および12を用意し、これらの仮固定フィルム11および12にLED素子3〜6を仮固定する。仮固定フィルム11および12として、たとえばPET(ポリエチレンテレフタレート)製のフィルムが用いられる。
次に、図5の(b)に示すように、仮固定工程において作製したLED素子3〜6が仮固定された仮固定フィルム11および12を、金型13と金型14との間にある空隙内に配置し、それから樹脂材料を当該空隙内に注入する。これにより、LED素子3〜6が樹脂成型体2に内に埋設されるように、樹脂材料の射出成型を行う。
次に、図5の(c)に示すように、射出成型工程において得られた射出成型品を、金型13と金型14との間にある空隙から取り出し、それから仮固定フィルム11および12を射出成型品から剥離する。これにより、LED素子3〜6の発光部32〜62が樹脂成型体2の側面22に露出する。一方、LED素子3〜6の陽極33a〜63aおよび陰極34〜64が樹脂成型体2の表面21に露出し、また、LED素子3〜6の陽極33b〜63bおよび陰極34b〜64bが、樹脂成型体2の裏面23に露出する。
最後に、図5の(d)に示すように、樹脂成型体2の表面21に露出した各LED素子3〜6の陽極33a〜63aおよび陰極34a〜64aに接続される配線82および84を、樹脂成型体2の表面21に形成する。さらに、樹脂成型体2の裏面23に露出した各LED素子3〜6の陽極33b〜63bおよび陰極34b〜64bに接続される配線81、83、85、および86を、樹脂成型体2の裏面23に形成する。これにより、発光装置1が完成される。
本実施形態に係る発光装置1aの製造方法では、LED素子3〜6が樹脂成型体2内に埋設されることによって樹脂成型体2内において固定されるため、発光装置1aにおけるLED素子3〜6の実装位置が、仮固定工程における仮固定フィルム11および12へのLED素子3〜6の設置位置に応じて正確に決まる。これにより、次の効果が得られる。
本発明に係る実施形態3について、図3〜5を参照して以下に説明する。なお、説明の便宜上、前記実施形態において説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を省略する。
エッジライト方式のバックライト装置は、携帯型端末装置の表示モジュール、ノート型パソコン、および液晶モニター等の各種の表示装置において、多用されている。現在、これらの装置の薄型化に伴って、エッジライト方式のバックライト装置の薄型化が強く要求されている。ここで、図6の(b)に示すように、本実施形態に係る発光装置1aの厚さを、LED素子3〜6の厚さにほぼ等しくできるため、発光装置1aを備えるバックライト装置90のLED実装部分をLED素子3〜6の厚さにまで最小化することができる。したがって、バックライト装置90をより薄型化することができる。
2 樹脂成型体
3〜6 LED素子(発光素子)
11、12 仮固定フィルム
13、14 金型
31〜61 基部
32〜62 発光部
33〜63 陽極
33a〜63a 陽極(他の電極)
33b〜63b 陽極(電極)
34〜64 陰極
34a〜64a 陰極(他の電極)
34b〜64b 陰極(電極)
71〜75 配線
81〜86 配線(配線、他の配線)
90 バックライト装置
91 樹脂フレーム
92 導光板
Claims (9)
- 樹脂成型体と、
少なくとも発光部および電極を有し、前記発光部が前記樹脂成型体における第1の面に露出しかつ前記電極が前記樹脂成型体における前記第1の面に直交する第2の面に露出するように、前記樹脂成型体に埋設されている発光素子と、
前記樹脂成型体における前記第2の面に形成され、かつ前記電極に接続される配線とを備えていると共に、
前記第2の面に垂直な方向において、前記発光部の厚さが、前記樹脂成型体の厚さに一致していることを特徴とする発光装置。 - 複数の前記発光素子が前記樹脂成型体に埋設されており、それぞれの前記発光素子が備える前記電極が、前記配線によって互いに接続されていることを特徴とする請求項1に記載の発光装置。
- 複数の前記発光素子が前記樹脂成型体に埋設されており、
それぞれの前記発光素子が、他の電極を備えており、
前記他の電極が、前記樹脂成型体における前記第1の面に直交しかつ前記第2の面に対向する第3の面に露出しており、
前記樹脂成型体における前記第3の面に形成され、かつ前記他の電極に接続される他の配線をさらに備えていることを特徴とする請求項1に記載の発光装置。 - 前記電極および前記他の電極が、一体的に形成されていることを特徴とする請求項3に記載の発光装置。
- 複数の前記発光素子が直線的に配列されていることを特徴とする請求項2〜4のいずれか1項に記載の発光装置。
- 前記発光素子は発光ダイオード素子であることを特徴とする請求項1〜5のいずれか1項に記載の発光装置。
- 導光板と、
前記導光板のいずれか側面に対向して配置される請求項1〜6のいずれか1項に記載の発光装置とを備え、
前記発光装置の樹脂成型体における前記第1の面が前記導光板の前記側面に対向することを特徴とするバックライト装置。 - 前記導光板が固定される樹脂フレームをさらに備えており、
前記発光装置が、前記樹脂フレームに埋設されていることを特徴とする請求項7に記載のバックライト装置。 - 請求項1〜6のいずれか1項に記載の発光装置を製造する発光装置の製造方法であって、
発光部と、当該発光部が形成される面に直交する面に形成される電極とを少なくとも有する発光素子を、当該電極が仮固定フィルムに接する形で当該仮固定フィルムに仮固定する工程と、
前記発光素子が仮固定された仮固定フィルムを金型内の空隙に配置し、当該空隙に樹脂材料を注入することによって、前記発光素子が埋設された樹脂成型体を形成する工程と、
前記樹脂成型体から前記仮固定フィルムを剥離する工程と、
前記樹脂成型体における前記電極が露出する面に、前記電極と接続される配線を形成する工程とを有する発光装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016013708A JP6645213B2 (ja) | 2016-01-27 | 2016-01-27 | 発光装置、および発光装置の製造方法 |
PCT/JP2016/085015 WO2017130553A1 (ja) | 2016-01-27 | 2016-11-25 | 発光装置、バックライト装置、および発光装置の製造方法 |
CN201680047239.1A CN107960135B (zh) | 2016-01-27 | 2016-11-25 | 发光装置、背光装置及发光装置的制造方法 |
EP16888137.3A EP3410500B1 (en) | 2016-01-27 | 2016-11-25 | Light emitting device, backlight device, and manufacturing method of light emitting device |
US15/750,843 US10607967B2 (en) | 2016-01-27 | 2016-11-25 | Light emitting device, backlight device, and manufacturing method of light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016013708A JP6645213B2 (ja) | 2016-01-27 | 2016-01-27 | 発光装置、および発光装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017135254A JP2017135254A (ja) | 2017-08-03 |
JP6645213B2 true JP6645213B2 (ja) | 2020-02-14 |
Family
ID=59398036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016013708A Expired - Fee Related JP6645213B2 (ja) | 2016-01-27 | 2016-01-27 | 発光装置、および発光装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10607967B2 (ja) |
EP (1) | EP3410500B1 (ja) |
JP (1) | JP6645213B2 (ja) |
CN (1) | CN107960135B (ja) |
WO (1) | WO2017130553A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7169052B2 (ja) | 2017-07-11 | 2022-11-10 | 株式会社ダイセル | フレネルレンズ、及びその製造方法 |
GB2568535B (en) | 2017-11-20 | 2020-12-02 | Svitzer As | Line handling system for coupling together lines on a tugboat |
CN110320704A (zh) * | 2018-03-29 | 2019-10-11 | 京东方科技集团股份有限公司 | 面光源及显示装置 |
CN108828841B (zh) * | 2018-07-26 | 2021-01-15 | 武汉华星光电技术有限公司 | Led背光装置及led显示装置 |
CN110456570B (zh) * | 2019-08-09 | 2021-11-16 | 佛山市国星光电股份有限公司 | 一种led背光模块及显示装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6425582A (en) | 1987-07-22 | 1989-01-27 | Oki Electric Ind Co Ltd | Mounting construction of led device |
JP2962008B2 (ja) | 1991-11-29 | 1999-10-12 | 松下電器産業株式会社 | シーケンシャル制御装置 |
JP3690852B2 (ja) | 1995-12-27 | 2005-08-31 | シャープ株式会社 | 面発光型表示装置 |
JPH11219961A (ja) | 1998-02-03 | 1999-08-10 | Oki Electric Ind Co Ltd | 光半導体モジュールの実装構造及びその実装方法 |
KR100772774B1 (ko) * | 2000-04-24 | 2007-11-01 | 로무 가부시키가이샤 | 측면발광반도체 발광장치 및 그 제조방법 |
JP2004127604A (ja) * | 2002-09-30 | 2004-04-22 | Citizen Electronics Co Ltd | 発光ダイオード及びバックライトユニット |
JP4357311B2 (ja) * | 2004-02-04 | 2009-11-04 | シチズン電子株式会社 | 発光ダイオードチップ |
JP4781797B2 (ja) * | 2005-11-29 | 2011-09-28 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
JP4910518B2 (ja) | 2006-07-05 | 2012-04-04 | 富士ゼロックス株式会社 | 有機電界発光素子の製造方法 |
JP5113594B2 (ja) * | 2008-04-03 | 2013-01-09 | ミネベア株式会社 | 線状光源装置、および面状照明装置 |
US8450929B2 (en) * | 2010-06-28 | 2013-05-28 | Panasonic Corporation | Light emitting device, backlight unit, liquid crystal display apparatus, and lighting apparatus |
EP2448028B1 (en) * | 2010-10-29 | 2017-05-31 | Nichia Corporation | Light emitting apparatus and production method thereof |
JP5648422B2 (ja) * | 2010-10-29 | 2015-01-07 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP5537446B2 (ja) * | 2011-01-14 | 2014-07-02 | 株式会社東芝 | 発光装置、発光モジュール、発光装置の製造方法 |
WO2014116035A1 (ko) | 2013-01-23 | 2014-07-31 | 주식회사 씨티랩 | 반도체 소자 구조물을 제조하는 방법 및 이를 이용하는 반도체 소자 구조물 |
JP6394052B2 (ja) * | 2013-05-13 | 2018-09-26 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP6438648B2 (ja) * | 2013-11-15 | 2018-12-19 | 日亜化学工業株式会社 | 半導体発光装置およびその製造方法 |
JP6354285B2 (ja) | 2014-04-22 | 2018-07-11 | オムロン株式会社 | 電子部品を埋設した樹脂構造体およびその製造方法 |
-
2016
- 2016-01-27 JP JP2016013708A patent/JP6645213B2/ja not_active Expired - Fee Related
- 2016-11-25 WO PCT/JP2016/085015 patent/WO2017130553A1/ja active Application Filing
- 2016-11-25 CN CN201680047239.1A patent/CN107960135B/zh not_active Expired - Fee Related
- 2016-11-25 US US15/750,843 patent/US10607967B2/en not_active Expired - Fee Related
- 2016-11-25 EP EP16888137.3A patent/EP3410500B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3410500A4 (en) | 2019-08-14 |
EP3410500B1 (en) | 2020-12-16 |
US10607967B2 (en) | 2020-03-31 |
JP2017135254A (ja) | 2017-08-03 |
CN107960135A (zh) | 2018-04-24 |
WO2017130553A1 (ja) | 2017-08-03 |
US20180233493A1 (en) | 2018-08-16 |
EP3410500A1 (en) | 2018-12-05 |
CN107960135B (zh) | 2019-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6645213B2 (ja) | 発光装置、および発光装置の製造方法 | |
US7940366B2 (en) | Display device including substrates bonded together through an adhesive | |
US9301428B2 (en) | Display apparatus | |
US10488689B2 (en) | Display device | |
JP2008078602A (ja) | 軟性印刷回路基板 | |
KR102528952B1 (ko) | 디스플레이 장치 | |
JP2008077029A (ja) | 平板表示装置及び携帯用表示機器 | |
US20120294042A1 (en) | Led module, backlight unit including the led module, and method for manufacturing the led module | |
JP2010092670A (ja) | 照明装置及び画像表示装置 | |
JP5276990B2 (ja) | 発光装置および面発光装置 | |
US9033567B2 (en) | Backlight assembly | |
JP5168977B2 (ja) | 平面表示装置 | |
US20230326421A1 (en) | Light-emitting assembly | |
JP2007232995A (ja) | 画像表示モジュール | |
JP2007305742A (ja) | Led光源装置 | |
WO2017130544A1 (ja) | 発光装置、および発光装置の製造方法 | |
US8419262B2 (en) | Light guide apparatus for backlight module | |
TW201816489A (zh) | 液晶顯示裝置與發光二極體組件 | |
JP2010103149A (ja) | 発光部材、発光装置、電子機器、機械装置、発光部材の製造方法、および発光装置の製造方法 | |
KR101887623B1 (ko) | 인쇄회로기판 및 그를 포함하는 백라이트유닛 | |
JP2014086196A (ja) | 照明装置 | |
JP5179005B2 (ja) | 画像表示モジュール | |
CN112349212B (zh) | 显示模块、显示面板和显示装置 | |
KR20160046982A (ko) | 표시 장치 | |
KR20070050776A (ko) | 오엘이디 디스플레이 패널 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20160527 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171026 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190521 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191223 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6645213 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |