JP6436791B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6436791B2
JP6436791B2 JP2015007228A JP2015007228A JP6436791B2 JP 6436791 B2 JP6436791 B2 JP 6436791B2 JP 2015007228 A JP2015007228 A JP 2015007228A JP 2015007228 A JP2015007228 A JP 2015007228A JP 6436791 B2 JP6436791 B2 JP 6436791B2
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JP
Japan
Prior art keywords
region
semiconductor device
resistor
thermal element
power
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JP2015007228A
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English (en)
Japanese (ja)
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JP2016134455A (ja
JP2016134455A5 (enExample
Inventor
津村　和宏
和宏 津村
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Ablic Inc
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Ablic Inc
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Publication date
Application filed by Ablic Inc filed Critical Ablic Inc
Priority to JP2015007228A priority Critical patent/JP6436791B2/ja
Priority to TW104143865A priority patent/TWI666731B/zh
Priority to US14/987,528 priority patent/US9472547B2/en
Priority to KR1020160003341A priority patent/KR102432745B1/ko
Priority to CN201610025886.4A priority patent/CN105810678B/zh
Publication of JP2016134455A publication Critical patent/JP2016134455A/ja
Publication of JP2016134455A5 publication Critical patent/JP2016134455A5/ja
Application granted granted Critical
Publication of JP6436791B2 publication Critical patent/JP6436791B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/153—LDMOS having built-in components the built-in component being PN junction diodes
    • H10D84/154—LDMOS having built-in components the built-in component being PN junction diodes in antiparallel diode configurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
JP2015007228A 2015-01-16 2015-01-16 半導体装置 Active JP6436791B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015007228A JP6436791B2 (ja) 2015-01-16 2015-01-16 半導体装置
TW104143865A TWI666731B (zh) 2015-01-16 2015-12-25 半導體裝置
US14/987,528 US9472547B2 (en) 2015-01-16 2016-01-04 Semiconductor device
KR1020160003341A KR102432745B1 (ko) 2015-01-16 2016-01-11 반도체 장치
CN201610025886.4A CN105810678B (zh) 2015-01-16 2016-01-15 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015007228A JP6436791B2 (ja) 2015-01-16 2015-01-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2016134455A JP2016134455A (ja) 2016-07-25
JP2016134455A5 JP2016134455A5 (enExample) 2017-12-14
JP6436791B2 true JP6436791B2 (ja) 2018-12-12

Family

ID=56408409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015007228A Active JP6436791B2 (ja) 2015-01-16 2015-01-16 半導体装置

Country Status (5)

Country Link
US (1) US9472547B2 (enExample)
JP (1) JP6436791B2 (enExample)
KR (1) KR102432745B1 (enExample)
CN (1) CN105810678B (enExample)
TW (1) TWI666731B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6305468B2 (ja) 2016-07-06 2018-04-04 株式会社ニトムズ 粘着クリーナー
JP2018055742A (ja) * 2016-09-28 2018-04-05 エイブリック株式会社 不揮発性半導体記憶装置
WO2020162013A1 (ja) * 2019-02-07 2020-08-13 富士電機株式会社 半導体装置
CN114761773B (zh) * 2019-05-21 2025-08-05 触控解决方案股份有限公司 芯片级封装中的组合式近红外和中红外传感器
TWI742613B (zh) * 2020-04-14 2021-10-11 聯陽半導體股份有限公司 積體電路的溫度感測裝置
CN111682070A (zh) * 2020-07-30 2020-09-18 电子科技大学 抑制可控型采样场效应晶体管负温度特性的器件
US12176289B2 (en) 2022-03-24 2024-12-24 International Business Machines Corporation Semiconductor device design mitigating latch-up

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
JP2522208B2 (ja) * 1987-03-19 1996-08-07 日本電装株式会社 半導体装置
JP3125529B2 (ja) * 1993-08-23 2001-01-22 富士電機株式会社 半導体装置
JP2701824B2 (ja) 1996-02-09 1998-01-21 株式会社デンソー 半導体装置
JP3431127B2 (ja) * 1997-03-31 2003-07-28 松下電器産業株式会社 電子装置および電子スイッチ装置
DE102004021393B4 (de) * 2004-04-30 2006-06-14 Infineon Technologies Ag Feldeffekt-Leistungstransistor
DE102004047752B3 (de) * 2004-09-30 2006-01-26 Infineon Technologies Ag Halbleiterbauteil mit Temperatursensor
JP5028748B2 (ja) * 2005-04-15 2012-09-19 富士電機株式会社 パワー半導体デバイスの温度計測装置
JP5125106B2 (ja) * 2007-01-15 2013-01-23 株式会社デンソー 半導体装置
JP2008198821A (ja) * 2007-02-14 2008-08-28 Ricoh Co Ltd 過熱保護回路を備える定電圧回路を内蔵した半導体装置
JP4934491B2 (ja) * 2007-05-09 2012-05-16 株式会社リコー 過熱保護回路およびそれを具備する電子機器、ならびにその制御方法
JP2008301305A (ja) * 2007-06-01 2008-12-11 Renesas Technology Corp 半導体集積回路
US8089134B2 (en) * 2008-02-06 2012-01-03 Fuji Electric Sytems Co., Ltd. Semiconductor device
DE102008011816B4 (de) * 2008-02-29 2015-05-28 Advanced Micro Devices, Inc. Temperaturüberwachung in einem Halbleiterbauelement unter Anwendung eines pn-Übergangs auf der Grundlage von Silizium/Germaniummaterial
JP5391955B2 (ja) * 2009-09-15 2014-01-15 株式会社リコー 半導体装置
US9559162B2 (en) * 2013-06-19 2017-01-31 Globalfoundries Inc. Thermoresistance sensor structure for integrated circuits and method of making

Also Published As

Publication number Publication date
TWI666731B (zh) 2019-07-21
CN105810678B (zh) 2020-09-01
KR102432745B1 (ko) 2022-08-16
KR20160088807A (ko) 2016-07-26
US9472547B2 (en) 2016-10-18
JP2016134455A (ja) 2016-07-25
CN105810678A (zh) 2016-07-27
TW201637132A (zh) 2016-10-16
US20160211256A1 (en) 2016-07-21

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