JP6432722B2 - 半導体センサー・デバイスおよびその製造方法 - Google Patents

半導体センサー・デバイスおよびその製造方法 Download PDF

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JP6432722B2
JP6432722B2 JP2013157230A JP2013157230A JP6432722B2 JP 6432722 B2 JP6432722 B2 JP 6432722B2 JP 2013157230 A JP2013157230 A JP 2013157230A JP 2013157230 A JP2013157230 A JP 2013157230A JP 6432722 B2 JP6432722 B2 JP 6432722B2
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substrate
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side wall
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JP2015028425A5 (enExample
JP2015028425A (ja
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俊 保坂
俊 保坂
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

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  • Measuring Fluid Pressure (AREA)
  • Reciprocating Pumps (AREA)
  • Pressure Sensors (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
JP2013157230A 2013-07-30 2013-07-30 半導体センサー・デバイスおよびその製造方法 Expired - Fee Related JP6432722B2 (ja)

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JP2013157230A JP6432722B2 (ja) 2013-07-30 2013-07-30 半導体センサー・デバイスおよびその製造方法

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JP2013157230A JP6432722B2 (ja) 2013-07-30 2013-07-30 半導体センサー・デバイスおよびその製造方法

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JP2015028425A5 JP2015028425A5 (enExample) 2016-09-29
JP6432722B2 true JP6432722B2 (ja) 2018-12-05

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Cited By (1)

* Cited by examiner, † Cited by third party
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JP2020059116A (ja) * 2018-08-29 2020-04-16 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ センサ装置およびセンサ装置を製造する方法

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JP6665588B2 (ja) * 2016-03-02 2020-03-13 オムロン株式会社 圧力センサ
JP6665589B2 (ja) * 2016-03-02 2020-03-13 オムロン株式会社 圧力センサチップ及び圧力センサ
KR102800484B1 (ko) * 2016-12-19 2025-04-25 삼성전자주식회사 미세 패턴 형성 방법, 커패시터 및 그의 형성 방법, 반도체 소자 및 그의 제조 방법, 반도체 소자를 포함하는 전자 시스템
PL3392633T3 (pl) 2017-04-19 2020-06-01 Huba Control Ag Przetwornik ciśnienia
JP7009857B2 (ja) * 2017-09-13 2022-01-26 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、及び、圧電デバイス
JPWO2019098168A1 (ja) * 2017-11-14 2019-11-14 大日本印刷株式会社 蒸着マスクを製造するための金属板、金属板の検査方法、金属板の製造方法、蒸着マスク、蒸着マスク装置及び蒸着マスクの製造方法
CN109026630B (zh) * 2018-08-14 2024-01-26 青岛天工智造创新科技有限公司 压缩装置及其压缩方法
JP7512265B2 (ja) * 2018-10-10 2024-07-08 ヨアノイム リサーチ フォルシュングスゲゼルシャフト エムベーハー 圧電センサ
CN111627723B (zh) * 2020-04-27 2021-08-17 清华大学 一种自匹配冲击幅值的自传感超级电容器及其制造方法
DE112020007733T5 (de) * 2020-10-26 2023-08-10 Tohoku University Elektrostatischer Wandler und Verfahren zum Herstellen eines elektrostatischen Wandlers
JP7602722B2 (ja) * 2021-01-08 2024-12-19 株式会社リコー 液体吐出ヘッドおよび液体吐出装置
CN113211997B (zh) * 2021-04-21 2022-04-08 四川天邑康和通信股份有限公司 一种双并排蝶形引入光缆智能喷印生产工艺控制方法
CN113406147B (zh) * 2021-05-08 2022-11-29 中北大学 一种氢气敏感元件及制备方法
CN114279599A (zh) * 2021-12-27 2022-04-05 北京京东方技术开发有限公司 柔性压力传感器、柔性压力应变传感组件及压力检测方法
CN114551641B (zh) * 2022-02-10 2023-09-12 中国科学院上海技术物理研究所 一种物理隔离耦合应力的焦平面探测器热层结构
DE102023122673A1 (de) * 2023-08-24 2025-02-27 Endress+Hauser SE+Co. KG Verfahren zur Herstellung einer Vielzahl von Sensorchips zum Bestimmen eines Drucks eines Mediums
CN117722486B (zh) * 2024-02-07 2024-04-26 江苏凯同威工业装备科技有限公司 一种力矩传感器的扭矩传动装置
CN118190238B (zh) * 2024-05-20 2024-07-16 北京量子信息科学研究院 一种基于半导体薄膜的气体压力传感器芯片及其制备方法
CN119136642A (zh) * 2024-09-11 2024-12-13 上海声一电子科技有限公司 一种压电复合材料、制作方法以及超声换能器
CN120568799B (zh) * 2025-07-31 2025-10-17 苏州华太电子技术股份有限公司 一种GaN HEMT器件

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EP1769545A4 (en) * 2004-04-27 2010-04-07 Univ Tel Aviv Future Tech Dev 3D MICROBATTERIES BASED ON NESTED MICROCONTAINER STRUCTURES
FR2880197B1 (fr) * 2004-12-23 2007-02-02 Commissariat Energie Atomique Electrolyte structure pour microbatterie
JP5181413B2 (ja) * 2005-09-13 2013-04-10 日立電線株式会社 電気化学装置用電極、固体電解質／電極接合体及びその製造方法
JP2008078119A (ja) * 2006-08-25 2008-04-03 Ngk Insulators Ltd 全固体蓄電素子
JP5452898B2 (ja) * 2008-08-20 2014-03-26 積水化学工業株式会社 電極装置及びその製造方法
EP2410649B1 (en) * 2009-03-18 2017-05-17 Fujitsu Limited Piezoelectric power generating device
JP5572974B2 (ja) * 2009-03-24 2014-08-20 セイコーエプソン株式会社 固体二次電池の製造方法
US8912522B2 (en) * 2009-08-26 2014-12-16 University Of Maryland Nanodevice arrays for electrical energy storage, capture and management and method for their formation
JP2011004598A (ja) * 2010-09-03 2011-01-06 Seiko Epson Corp 圧電型発電機および圧電型発電機を用いた電子機器
JP2012104691A (ja) * 2010-11-11 2012-05-31 Nec Corp 振動発電デバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020059116A (ja) * 2018-08-29 2020-04-16 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ センサ装置およびセンサ装置を製造する方法
JP7393155B2 (ja) 2018-08-29 2023-12-06 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング センサ装置およびセンサ装置を製造する方法

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