JP6432722B2 - 半導体センサー・デバイスおよびその製造方法 - Google Patents

半導体センサー・デバイスおよびその製造方法 Download PDF

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JP6432722B2
JP6432722B2 JP2013157230A JP2013157230A JP6432722B2 JP 6432722 B2 JP6432722 B2 JP 6432722B2 JP 2013157230 A JP2013157230 A JP 2013157230A JP 2013157230 A JP2013157230 A JP 2013157230A JP 6432722 B2 JP6432722 B2 JP 6432722B2
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substrate
groove
recess
film
side wall
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JP2015028425A (ja
JP2015028425A5 (OSRAM
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俊 保坂
俊 保坂
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

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  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Measuring Fluid Pressure (AREA)
  • Reciprocating Pumps (AREA)
  • Pressure Sensors (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
JP2013157230A 2013-07-30 2013-07-30 半導体センサー・デバイスおよびその製造方法 Expired - Fee Related JP6432722B2 (ja)

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JP2013157230A JP6432722B2 (ja) 2013-07-30 2013-07-30 半導体センサー・デバイスおよびその製造方法

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JP2013157230A JP6432722B2 (ja) 2013-07-30 2013-07-30 半導体センサー・デバイスおよびその製造方法

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JP2015028425A JP2015028425A (ja) 2015-02-12
JP2015028425A5 JP2015028425A5 (OSRAM) 2016-09-29
JP6432722B2 true JP6432722B2 (ja) 2018-12-05

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020059116A (ja) * 2018-08-29 2020-04-16 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ センサ装置およびセンサ装置を製造する方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6665589B2 (ja) * 2016-03-02 2020-03-13 オムロン株式会社 圧力センサチップ及び圧力センサ
JP6665588B2 (ja) * 2016-03-02 2020-03-13 オムロン株式会社 圧力センサ
KR102800484B1 (ko) * 2016-12-19 2025-04-25 삼성전자주식회사 미세 패턴 형성 방법, 커패시터 및 그의 형성 방법, 반도체 소자 및 그의 제조 방법, 반도체 소자를 포함하는 전자 시스템
PL3392633T3 (pl) 2017-04-19 2020-06-01 Huba Control Ag Przetwornik ciśnienia
JP7009857B2 (ja) * 2017-09-13 2022-01-26 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、及び、圧電デバイス
EP3712296A4 (en) * 2017-11-14 2021-08-11 Dai Nippon Printing Co., Ltd. METAL PLATE FOR PRODUCING MASKS FOR STEAM DEPOSIT, PROCESS FOR PRODUCING METAL PLATES, MASK FOR STEAM DEPOSIT, PROCESS FOR PRODUCING MASK FOR STEAM DEPOSIT, AND MASK DEVICE FOR STEAM DEPOSIT VAPOR PHASE DEPOSIT MASK
CN109026630B (zh) * 2018-08-14 2024-01-26 青岛天工智造创新科技有限公司 压缩装置及其压缩方法
CN112867913A (zh) * 2018-10-10 2021-05-28 约阿内研究有限责任公司 压电传感器
CN111627723B (zh) * 2020-04-27 2021-08-17 清华大学 一种自匹配冲击幅值的自传感超级电容器及其制造方法
JP7619657B2 (ja) * 2020-10-26 2025-01-22 国立大学法人東北大学 静電トランスデューサおよび静電トランスデューサの製造方法
JP7602722B2 (ja) * 2021-01-08 2024-12-19 株式会社リコー 液体吐出ヘッドおよび液体吐出装置
CN113211997B (zh) * 2021-04-21 2022-04-08 四川天邑康和通信股份有限公司 一种双并排蝶形引入光缆智能喷印生产工艺控制方法
CN113406147B (zh) * 2021-05-08 2022-11-29 中北大学 一种氢气敏感元件及制备方法
CN114279599A (zh) * 2021-12-27 2022-04-05 北京京东方技术开发有限公司 柔性压力传感器、柔性压力应变传感组件及压力检测方法
CN114551641B (zh) * 2022-02-10 2023-09-12 中国科学院上海技术物理研究所 一种物理隔离耦合应力的焦平面探测器热层结构
DE102023122673A1 (de) * 2023-08-24 2025-02-27 Endress+Hauser SE+Co. KG Verfahren zur Herstellung einer Vielzahl von Sensorchips zum Bestimmen eines Drucks eines Mediums
CN117722486B (zh) * 2024-02-07 2024-04-26 江苏凯同威工业装备科技有限公司 一种力矩传感器的扭矩传动装置
CN118190238B (zh) * 2024-05-20 2024-07-16 北京量子信息科学研究院 一种基于半导体薄膜的气体压力传感器芯片及其制备方法
CN119136642A (zh) * 2024-09-11 2024-12-13 上海声一电子科技有限公司 一种压电复合材料、制作方法以及超声换能器
CN120568799B (zh) * 2025-07-31 2025-10-17 苏州华太电子技术股份有限公司 一种GaN HEMT器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8187740B2 (en) * 2004-04-27 2012-05-29 Tel Aviv University Future Technology Development L.P. 3-D microbatteries based on interlaced micro-container structures
FR2880197B1 (fr) * 2004-12-23 2007-02-02 Commissariat Energie Atomique Electrolyte structure pour microbatterie
JP5181413B2 (ja) * 2005-09-13 2013-04-10 日立電線株式会社 電気化学装置用電極、固体電解質／電極接合体及びその製造方法
JP2008078119A (ja) * 2006-08-25 2008-04-03 Ngk Insulators Ltd 全固体蓄電素子
JP5452898B2 (ja) * 2008-08-20 2014-03-26 積水化学工業株式会社 電極装置及びその製造方法
WO2010106598A1 (ja) * 2009-03-18 2010-09-23 富士通株式会社 圧電発電装置
JP5572974B2 (ja) * 2009-03-24 2014-08-20 セイコーエプソン株式会社 固体二次電池の製造方法
US8912522B2 (en) * 2009-08-26 2014-12-16 University Of Maryland Nanodevice arrays for electrical energy storage, capture and management and method for their formation
JP2011004598A (ja) * 2010-09-03 2011-01-06 Seiko Epson Corp 圧電型発電機および圧電型発電機を用いた電子機器
JP2012104691A (ja) * 2010-11-11 2012-05-31 Nec Corp 振動発電デバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020059116A (ja) * 2018-08-29 2020-04-16 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ センサ装置およびセンサ装置を製造する方法
JP7393155B2 (ja) 2018-08-29 2023-12-06 ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング センサ装置およびセンサ装置を製造する方法

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