JP6430201B2 - センサ - Google Patents
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- JP6430201B2 JP6430201B2 JP2014202632A JP2014202632A JP6430201B2 JP 6430201 B2 JP6430201 B2 JP 6430201B2 JP 2014202632 A JP2014202632 A JP 2014202632A JP 2014202632 A JP2014202632 A JP 2014202632A JP 6430201 B2 JP6430201 B2 JP 6430201B2
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- 230000005291 magnetic effect Effects 0.000 claims description 259
- 239000000853 adhesive Substances 0.000 claims description 48
- 230000001070 adhesive effect Effects 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 33
- 238000001514 detection method Methods 0.000 claims description 25
- 239000006249 magnetic particle Substances 0.000 claims description 12
- 230000004048 modification Effects 0.000 description 18
- 238000012986 modification Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 230000035699 permeability Effects 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000012212 insulator Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000889 permalloy Inorganic materials 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 iron Chemical compound 0.000 description 1
- OBACEDMBGYVZMP-UHFFFAOYSA-N iron platinum Chemical compound [Fe].[Fe].[Pt] OBACEDMBGYVZMP-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0047—Housings or packaging of magnetic sensors ; Holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
- G01R33/0076—Protection, e.g. with housings against stray fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/025—Compensating stray fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Measuring Fluid Pressure (AREA)
- Measuring Magnetic Variables (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Description
図1は、本発明の第1の実施形態に係る磁気シールドパッケージの斜視図(図1(a))および断面図(図1(b))である。第1の実施形態に係る磁気シールドパッケージ1は、パッケージ基板10、第1の磁気シールド部材11、第2の磁気シールド部材12、圧力検知素子13、磁気デバイス14、集積回路15を有する。図2には、磁気シールドパッケージ1から第2の磁気シールド部材12を外した状態での上面図を示す。
図5は、本発明の第1の実施形態の変形例に係る磁気シールドパッケージの断面図である。図5では、図1と同様の構成要素には同じ記号を付して、その構成要素についての詳細な説明は省略する。本変形例に係る磁気シールドパッケージ2は、第1の実施形態に係る磁気シールドパッケージに第3の磁気シールド部材21を加えた構成である。図6は磁気シールドパッケージ2から第2の磁気シールド部材12を外した状態での斜視図である。
図7は、本発明の第1の実施形態の変形例2に係る磁気シールドパッケージの斜視図(図7(a))および断面図(図7(b))である。図7に示す磁気シールドパッケージ5では、図1の磁気シールドパッケージ1と同じ構成要素は同じ記号を付す。図7に示すように、磁気シールドパッケージ5は、第1の磁気シールド部材11ではなく、第2の磁気シールド部材12に開口部12hを設ける。
図8は、本発明の第2の実施形態に係る磁気シールドパッケージの断面図である。第2の実施形態に係る磁気シールドパッケージ3は、パッケージ基板30、第1の磁気シールド部材31、第2の磁気シールド部材32、圧力検知素子13、磁気デバイス14、集積回路15、半田ボール39を有する。圧力検知素子13、磁気デバイス14、集積回路15等の構成要素は第1の実施形態の磁気シールドパッケージ1と同様であるため、同じ記号を付し、詳細な説明は省略する。
Claims (7)
- 磁気デバイスと、
前記磁気デバイスの下方に設けられた第1の磁性体と、
前記磁気デバイスを覆う第2の磁性体と、
前記磁気デバイスの四方に設けられた第3の磁性体と、を有し、
前記第1の磁性体、または、前記第2の磁性体に開口が設けられ、
前記第2の磁性体は、前記磁気デバイスおよび前記第3の磁性体を覆い、
前記第3の磁性体は、非磁性の接着剤により前記第1の磁性体に接着される、
センサ。 - 磁気デバイスと、
前記磁気デバイスの下に設けられた圧力検知素子と、
前記圧力検知素子の下方に設けられ、前記圧力検知素子の直下の少なくとも一部に第1の開口が設けられた第1の磁性体と、
前記磁気デバイスを覆う第2の磁性体と、
前記磁気デバイスの四方に設けられた第3の磁性体と、を有し、
前記第2の磁性体は、前記磁気デバイスおよび前記第3の磁性体を覆い、
前記第3の磁性体は、非磁性の接着剤により前記第1の磁性体に接着される、
センサ。 - 磁気デバイスと、
前記磁気デバイスの下に設けられた圧力検知素子と、
前記圧力検知素子の下方に設けられ、前記圧力検知素子の直下の少なくとも一部に第1の開口が設けられた第1の磁性体と、
前記磁気デバイスを覆う第2の磁性体と、
前記圧力検知素子の下方に設けられ、前記圧力検知素子の直下の少なくとも一部に第2の開口が設けられた基板と、を有し、
前記第1の磁性体には、複数の前記第1の開口が設けられ、複数の前記第1の開口のそれぞれは、前記第2の開口よりも面積が小さい、
センサ。 - 磁気デバイスと、
前記磁気デバイスの下に設けられた圧力検知素子と、
前記圧力検知素子の下方に設けられ、前記圧力検知素子の直下の少なくとも一部に第1の開口が設けられた第1の磁性体と、
前記磁気デバイスを覆う第2の磁性体と、
前記圧力検知素子の下方に設けられ、前記圧力検知素子の直下の少なくとも一部に第2の開口が設けられた基板と、を有し、
前記第1の開口は、前記第2の開口よりも面積が小さい、
センサ。 - 前記第1の磁性体と前記第2の磁性体とは、磁性粒子を含む接着剤によって接着されている請求項1〜4のいずれか1項に記載のセンサ。
- 前記磁気デバイスの四方に設けられた第3の磁性体を更に有し、
前記第2の磁性体は、前記磁気デバイスおよび前記第3の磁性体を覆い、前記基板は前記第1の磁性体上に設けられ、前記第3の磁性体は非磁性の接着剤により前記基板に接着される請求項3または4に記載のセンサ。 - 前記第2の磁性体は、前記第1の磁性体の上方に設けられる、請求項1〜4のいずれか1項に記載のセンサ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014202632A JP6430201B2 (ja) | 2014-09-30 | 2014-09-30 | センサ |
TW104132266A TW201618271A (zh) | 2014-09-30 | 2015-09-30 | 磁屏蔽封裝體 |
US14/870,817 US9885762B2 (en) | 2014-09-30 | 2015-09-30 | Magnetic shielded package having magnetic shield members |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014202632A JP6430201B2 (ja) | 2014-09-30 | 2014-09-30 | センサ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018202980A Division JP2019012087A (ja) | 2018-10-29 | 2018-10-29 | センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016070848A JP2016070848A (ja) | 2016-05-09 |
JP6430201B2 true JP6430201B2 (ja) | 2018-11-28 |
Family
ID=55584131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014202632A Expired - Fee Related JP6430201B2 (ja) | 2014-09-30 | 2014-09-30 | センサ |
Country Status (3)
Country | Link |
---|---|
US (1) | US9885762B2 (ja) |
JP (1) | JP6430201B2 (ja) |
TW (1) | TW201618271A (ja) |
Families Citing this family (22)
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WO2016144039A1 (en) | 2015-03-06 | 2016-09-15 | Samsung Electronics Co., Ltd. | Circuit element package, manufacturing method thereof, and manufacturing apparatus thereof |
US20170240418A1 (en) * | 2016-02-18 | 2017-08-24 | Knowles Electronics, Llc | Low-cost miniature mems vibration sensor |
US10477737B2 (en) * | 2016-05-04 | 2019-11-12 | Samsung Electronics Co., Ltd. | Manufacturing method of a hollow shielding structure for circuit elements |
KR102481868B1 (ko) * | 2016-05-04 | 2022-12-28 | 삼성전자주식회사 | 이종의 회로 소자군용 중공 차폐구조 및 그 제조방법 |
US10477687B2 (en) | 2016-08-04 | 2019-11-12 | Samsung Electronics Co., Ltd. | Manufacturing method for EMI shielding structure |
KR20180029541A (ko) * | 2016-09-12 | 2018-03-21 | 엘지이노텍 주식회사 | 자성시트 및 이를 포함하는 무선 전력 수신 장치 |
KR20180032985A (ko) * | 2016-09-23 | 2018-04-02 | 삼성전자주식회사 | 집적회로 패키지 및 그 제조 방법과 집적회로 패키지를 포함하는 웨어러블 디바이스 |
KR102551657B1 (ko) | 2016-12-12 | 2023-07-06 | 삼성전자주식회사 | 전자파 차폐구조 및 그 제조방법 |
JP6790956B2 (ja) | 2017-03-27 | 2020-11-25 | Tdk株式会社 | 磁気センサ装置 |
US10431732B2 (en) * | 2017-05-31 | 2019-10-01 | Globalfoundries Singapore Pte. Ltd. | Shielded magnetoresistive random access memory devices and methods for fabricating the same |
US10594020B2 (en) | 2017-07-19 | 2020-03-17 | Samsung Electronics Co., Ltd. | Electronic device having antenna element and method for manufacturing the same |
KR102373931B1 (ko) | 2017-09-08 | 2022-03-14 | 삼성전자주식회사 | 전자파 차폐구조 |
US10718825B2 (en) * | 2017-09-13 | 2020-07-21 | Nxp B.V. | Stray magnetic field robust magnetic field sensor and system |
EP4117407A1 (en) * | 2018-02-21 | 2023-01-11 | Samsung Electronics Co., Ltd. | Electronic device including shield member for shielding at least part of magnetic force generated by magnetic substance and connection portion including property of nonmagnetic substance connected to shield member |
KR102540241B1 (ko) * | 2018-02-21 | 2023-06-08 | 삼성전자주식회사 | 자성체로부터 발생하는 자기력의 적어도 일부를 차폐하기 위한 차폐 부재 및 차폐 부재와 연결된 비자성체 속성을 갖는 연결부를 포함하는 전자 장치 |
JP7013346B2 (ja) * | 2018-03-14 | 2022-01-31 | 株式会社東芝 | センサ |
JP6877379B2 (ja) * | 2018-03-14 | 2021-05-26 | 株式会社東芝 | センサ |
US10775197B2 (en) | 2018-03-14 | 2020-09-15 | Kabushiki Kaisha Toshiba | Sensor |
JP2020092114A (ja) * | 2018-12-03 | 2020-06-11 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および撮像装置 |
US11774519B2 (en) * | 2019-08-27 | 2023-10-03 | Texas Instruments Incorporated | Shielded sensor structure and method of making same |
JP6997892B2 (ja) * | 2021-03-02 | 2022-01-18 | 株式会社東芝 | センサ |
US11754646B2 (en) | 2021-03-24 | 2023-09-12 | Analog Devices International Unlimited Company | Magnetic sensor system |
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-
2014
- 2014-09-30 JP JP2014202632A patent/JP6430201B2/ja not_active Expired - Fee Related
-
2015
- 2015-09-30 US US14/870,817 patent/US9885762B2/en active Active
- 2015-09-30 TW TW104132266A patent/TW201618271A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2016070848A (ja) | 2016-05-09 |
US9885762B2 (en) | 2018-02-06 |
TW201618271A (zh) | 2016-05-16 |
US20160091575A1 (en) | 2016-03-31 |
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