JP6421055B2 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JP6421055B2 JP6421055B2 JP2015043093A JP2015043093A JP6421055B2 JP 6421055 B2 JP6421055 B2 JP 6421055B2 JP 2015043093 A JP2015043093 A JP 2015043093A JP 2015043093 A JP2015043093 A JP 2015043093A JP 6421055 B2 JP6421055 B2 JP 6421055B2
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- 239000004065 semiconductor Substances 0.000 claims description 70
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 230000017525 heat dissipation Effects 0.000 claims description 23
- 238000003860 storage Methods 0.000 claims description 14
- 230000005855 radiation Effects 0.000 claims description 6
- 239000003507 refrigerant Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 19
- 239000004020 conductor Substances 0.000 description 14
- 238000001816 cooling Methods 0.000 description 11
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 5
- 238000005219 brazing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
140 インバータ装置
144 インバータ回路
150 上下アーム直列回路
153 コレクタ電極
154 ゲート電極
155 信号用エミッタ電極
156 ダイオード(上アーム)
157 正極端子(P端子)
158 負極端子(N端子)
159 交流端子
163 コレクタ電極
164 ゲート電極
165 信号用エミッタ電極
166 ダイオード(下アーム)
169 中間電極
186 交流電力線(交流バスバー)
188 交流コネクタ
192 モータジェネレータ
200 制御基板
300 パワー半導体モジュール
302 回路体
304 ケース枠体
305a 放熱部(フィン)
305b 放熱部(フィン)
306 収納空間
307 放熱ベース
308 基準面
309 シール面
311 端子貫通孔(第1開口)
312 Oリング溝
314 直流正極端子
315 導体部
315D 正極側端子
316 直流負極端子
318 導体部
319 導体部
319D 負極側端子
320 導体部
320D 交流端子
327L 信号接続端子
327U 信号接続端子
328 IGBT(上アーム)
330 IGBT(下アーム)
333 絶縁材料
348 樹脂封止材
400 流路形成体
403 流路開口
404 Oリング溝
405 流路空間
406 モジュール受け面
413 蓋
413A 端子開口
450 筐体蓋
500 コンデンサモジュール
504 負極側コンデンサ端子
506 正極側コンデンサ端子
700 モールドバスバー
709 交流バスバー
710 直流バスバー
Claims (4)
- パワー半導体素子及び端子を有する回路体と、前記回路体を収納する収納空間を形成するケースと、を備えたパワー半導体モジュールと、
冷媒を流す流路空間と、当該流路空間に繋がる流路開口を形成する流路形成体と、
前記流路開口を塞ぐ蓋と、を備えた電力変換装置であって、
前記ケースは、前記収納空間と対向して配置される第1放熱部と、前記収納空間を挟んで前記第1放熱部と対向して配置される第2放熱部と、前記第1放熱部の側部に配置されるとともに前記端子を貫通させる第1開口と、前記第1開口を囲んで形成されるシール面と、前記第2放熱部の側部に配置される基準面と、を有し、
前記基準面は、前記基準面の垂直方向から投影した場合に、当該基準面の射影部と前記シール面の射影部とが重なるように、前記ケースの前記シール面が配置される面とは反対側の面に形成され、
前記パワー半導体モジュールは、前記流路空間内に配置され、
前記蓋は、前記シール面及び前記第1放熱部を覆うようにして、前記流路開口を塞ぎ、
前記流路形成体は、前記パワー半導体モジュールの前記基準面と当接する受け面を有する電力変換装置。 - 請求項1に記載の電力変換装置であって、
前記ケースは、開口部を有するケース枠体と、金属製の放熱ベースと、を有し、
前記ケース枠体の開口部は、前記放熱ベースによって塞がれ、
前記放熱ベースは、前記ケースの前記第2放熱部を形成し、
前記ケース枠体と前記放熱ベースの接合部は、前記基準面に形成される電力変換装置。 - 請求項1又は2に記載の電力変換装置であって、
前記端子は、直流を伝達する直流端子と、交流を伝達する交流端子と、を有し、
前記第1開口は、前記直流端子及び前記交流端子が貫通される電力変換装置。 - 請求項3に記載の電力変換装置であって、
前記端子は、直流を伝達する直流端子と、交流を伝達する交流端子と、を有し、
前記ケースは、前記第1放熱部を挟んで前記第1開口とは反対側に配置される第2開口を有し、
前記第1開口は、前記直流端子が貫通され、
前記第2開口は、前記直流端子が貫通される電力変換装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015043093A JP6421055B2 (ja) | 2015-03-05 | 2015-03-05 | 電力変換装置 |
CN201680013000.2A CN107408554B (zh) | 2015-03-05 | 2016-02-26 | 电力转换装置 |
US15/555,444 US10027246B2 (en) | 2015-03-05 | 2016-02-26 | Power semiconductor module and electric power conversion device |
DE112016000703.5T DE112016000703B4 (de) | 2015-03-05 | 2016-02-26 | Leistungshalbleitermodul und Vorrichtung zum Umsetzen elektrischer Leistung |
PCT/JP2016/055737 WO2016140147A1 (ja) | 2015-03-05 | 2016-02-26 | パワー半導体モジュール及び電力変換装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015043093A JP6421055B2 (ja) | 2015-03-05 | 2015-03-05 | 電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016162986A JP2016162986A (ja) | 2016-09-05 |
JP6421055B2 true JP6421055B2 (ja) | 2018-11-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015043093A Active JP6421055B2 (ja) | 2015-03-05 | 2015-03-05 | 電力変換装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10027246B2 (ja) |
JP (1) | JP6421055B2 (ja) |
CN (1) | CN107408554B (ja) |
DE (1) | DE112016000703B4 (ja) |
WO (1) | WO2016140147A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10959342B2 (en) * | 2019-04-08 | 2021-03-23 | Kevin R. Williams | Condensation resistant power semiconductor module |
WO2018008424A1 (ja) * | 2016-07-08 | 2018-01-11 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
CN109755194B (zh) * | 2017-11-01 | 2020-07-24 | 株洲中车时代电气股份有限公司 | 一种集成半导体模块功率组件及其制作方法 |
JP7118788B2 (ja) * | 2018-07-19 | 2022-08-16 | 株式会社フジクラ | コールドプレート及びコールドプレートの製造方法 |
US10903409B1 (en) * | 2019-07-25 | 2021-01-26 | Denso International America, Inc. | Thermoelectric generator for semiconductor power module |
JP2022059427A (ja) * | 2020-10-01 | 2022-04-13 | 株式会社日立製作所 | 半導体装置およびホイール内蔵システム |
JP7191157B1 (ja) | 2021-06-07 | 2022-12-16 | 三菱電機株式会社 | スイッチング装置 |
JP2024093978A (ja) * | 2022-12-27 | 2024-07-09 | 株式会社日立製作所 | 電力変換装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3903681B2 (ja) * | 1999-03-11 | 2007-04-11 | 三菱マテリアル株式会社 | 半導体装置 |
JP2003264265A (ja) * | 2002-03-08 | 2003-09-19 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2004363295A (ja) * | 2003-06-04 | 2004-12-24 | Mitsubishi Electric Corp | 半導体装置 |
JP4039339B2 (ja) | 2003-08-07 | 2008-01-30 | トヨタ自動車株式会社 | 浸漬式両面放熱パワーモジュール |
JP5120605B2 (ja) | 2007-05-22 | 2013-01-16 | アイシン・エィ・ダブリュ株式会社 | 半導体モジュール及びインバータ装置 |
JP5557441B2 (ja) | 2008-10-31 | 2014-07-23 | 日立オートモティブシステムズ株式会社 | 電力変換装置および電動車両 |
JP5369798B2 (ja) * | 2009-03-18 | 2013-12-18 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5481148B2 (ja) * | 2009-10-02 | 2014-04-23 | 日立オートモティブシステムズ株式会社 | 半導体装置、およびパワー半導体モジュール、およびパワー半導体モジュールを備えた電力変換装置 |
JP5182274B2 (ja) * | 2009-11-17 | 2013-04-17 | 三菱電機株式会社 | パワー半導体装置 |
JP5251991B2 (ja) | 2011-01-14 | 2013-07-31 | トヨタ自動車株式会社 | 半導体モジュール |
JP5520889B2 (ja) | 2011-06-24 | 2014-06-11 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びそれを用いた電力変換装置 |
JP6083109B2 (ja) * | 2012-01-18 | 2017-02-22 | 富士電機株式会社 | 半導体装置 |
-
2015
- 2015-03-05 JP JP2015043093A patent/JP6421055B2/ja active Active
-
2016
- 2016-02-26 US US15/555,444 patent/US10027246B2/en active Active
- 2016-02-26 WO PCT/JP2016/055737 patent/WO2016140147A1/ja active Application Filing
- 2016-02-26 DE DE112016000703.5T patent/DE112016000703B4/de active Active
- 2016-02-26 CN CN201680013000.2A patent/CN107408554B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
WO2016140147A1 (ja) | 2016-09-09 |
US10027246B2 (en) | 2018-07-17 |
CN107408554B (zh) | 2019-08-16 |
US20180041136A1 (en) | 2018-02-08 |
DE112016000703T5 (de) | 2017-10-26 |
CN107408554A (zh) | 2017-11-28 |
JP2016162986A (ja) | 2016-09-05 |
DE112016000703B4 (de) | 2024-08-01 |
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