JP6414373B1 - 樹脂組成物の流動性評価方法、樹脂組成物の選別方法及び半導体装置の製造方法 - Google Patents

樹脂組成物の流動性評価方法、樹脂組成物の選別方法及び半導体装置の製造方法 Download PDF

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Publication number
JP6414373B1
JP6414373B1 JP2018540886A JP2018540886A JP6414373B1 JP 6414373 B1 JP6414373 B1 JP 6414373B1 JP 2018540886 A JP2018540886 A JP 2018540886A JP 2018540886 A JP2018540886 A JP 2018540886A JP 6414373 B1 JP6414373 B1 JP 6414373B1
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resin composition
shear modulus
sample
evaluation method
semiconductor device
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Japanese (ja)
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JPWO2019171475A1 (ja
Inventor
省吾 祖父江
省吾 祖父江
竜也 牧野
竜也 牧野
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Resonac Corp
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N11/00—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N11/00—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties
    • G01N2011/0046—In situ measurement during mixing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
JP2018540886A 2018-03-06 2018-03-06 樹脂組成物の流動性評価方法、樹脂組成物の選別方法及び半導体装置の製造方法 Active JP6414373B1 (ja)

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Application Number Priority Date Filing Date Title
PCT/JP2018/008614 WO2019171475A1 (ja) 2018-03-06 2018-03-06 樹脂組成物の流動性評価方法、樹脂組成物の選別方法及び半導体装置の製造方法

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JP6414373B1 true JP6414373B1 (ja) 2018-10-31
JPWO2019171475A1 JPWO2019171475A1 (ja) 2020-04-16

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JP (1) JP6414373B1 (zh)
KR (1) KR102455721B1 (zh)
CN (1) CN111801567B (zh)
WO (1) WO2019171475A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111426554A (zh) * 2020-03-23 2020-07-17 天津大学 一种半导体芯片高温剪切试验夹具

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230167521A (ko) 2022-06-02 2023-12-11 에쓰대시오일 주식회사 고분자 수지의 흐름성 측정 방법 및 측정 장치

Citations (2)

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JP2010256293A (ja) * 2009-04-28 2010-11-11 Nitto Denko Corp 応力−ひずみ曲線式を出力するためのプログラム及びその装置
JP2014175459A (ja) * 2013-03-08 2014-09-22 Hitachi Chemical Co Ltd 半導体装置及び半導体装置の製造方法

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TW200834364A (en) * 2006-10-06 2008-08-16 Hitachi Chemical Co Ltd Method for analyzing fluidity of resin material including particles and fluidity analysis system
US8546959B2 (en) * 2008-12-10 2013-10-01 Sumitomo Bakelite Co., Ltd. Resin composition for encapsulating semiconductor, method for producing semiconductor device and semiconductor device
US20120280425A1 (en) * 2009-11-24 2012-11-08 Sumitomo Bakelite Co., Ltd. Mold for measuring flow characteristics, method for measuring flow characteristics, resin composition for encapsulating semiconductor, and method for manufacturing semiconductor apparatus
JP5639930B2 (ja) * 2010-03-02 2014-12-10 三菱樹脂株式会社 太陽電池封止材及びそれを用いて作製された太陽電池モジュール
EP2616796B1 (en) * 2010-09-15 2020-02-19 Fraunhofer USA, Inc. Methods and apparatus for detecting cross-linking in a polymer
JP2013165263A (ja) * 2012-01-13 2013-08-22 Mitsubishi Plastics Inc 外観が良好な太陽電池モジュール及びその製造方法
JP6347657B2 (ja) * 2014-04-22 2018-06-27 デクセリアルズ株式会社 保護テープ、及びこれを用いた半導体装置の製造方法
KR101975004B1 (ko) * 2015-04-30 2019-05-03 주식회사 엘지화학 고분자 가공의 예측 방법
JP6844119B2 (ja) 2016-04-11 2021-03-17 株式会社豊田中央研究所 光周波数掃引レーザ光源、及びレーザレーダ
JP6191799B1 (ja) 2017-04-19 2017-09-06 日立化成株式会社 半導体装置、半導体装置の製造方法及びフィルム状接着剤

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JP2010256293A (ja) * 2009-04-28 2010-11-11 Nitto Denko Corp 応力−ひずみ曲線式を出力するためのプログラム及びその装置
JP2014175459A (ja) * 2013-03-08 2014-09-22 Hitachi Chemical Co Ltd 半導体装置及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111426554A (zh) * 2020-03-23 2020-07-17 天津大学 一种半导体芯片高温剪切试验夹具
CN111426554B (zh) * 2020-03-23 2021-10-08 天津大学 一种半导体芯片高温剪切试验夹具

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KR20200125624A (ko) 2020-11-04
CN111801567A (zh) 2020-10-20
CN111801567B (zh) 2023-08-11
JPWO2019171475A1 (ja) 2020-04-16
WO2019171475A1 (ja) 2019-09-12
KR102455721B1 (ko) 2022-10-17

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