JP6377846B2 - オプトエレクトロニクス半導体装置の製造方法およびオプトエレクトロニクス半導体装置 - Google Patents
オプトエレクトロニクス半導体装置の製造方法およびオプトエレクトロニクス半導体装置 Download PDFInfo
- Publication number
- JP6377846B2 JP6377846B2 JP2017516451A JP2017516451A JP6377846B2 JP 6377846 B2 JP6377846 B2 JP 6377846B2 JP 2017516451 A JP2017516451 A JP 2017516451A JP 2017516451 A JP2017516451 A JP 2017516451A JP 6377846 B2 JP6377846 B2 JP 6377846B2
- Authority
- JP
- Japan
- Prior art keywords
- conversion
- package body
- semiconductor device
- semiconductor chip
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 214
- 230000005693 optoelectronics Effects 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 49
- 238000006243 chemical reaction Methods 0.000 claims description 150
- 238000000034 method Methods 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 38
- 239000011888 foil Substances 0.000 claims description 32
- 238000007789 sealing Methods 0.000 claims description 29
- 238000000576 coating method Methods 0.000 claims description 14
- 239000003566 sealing material Substances 0.000 claims description 14
- 239000002905 metal composite material Substances 0.000 claims description 11
- 238000005266 casting Methods 0.000 claims description 10
- 230000005670 electromagnetic radiation Effects 0.000 claims description 10
- 239000002096 quantum dot Substances 0.000 claims description 10
- 238000000748 compression moulding Methods 0.000 claims description 4
- 238000001721 transfer moulding Methods 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 28
- 239000002184 metal Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920000052 poly(p-xylylene) Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- -1 CuInS 2 Chemical compound 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- OOTFVKOQINZBBF-UHFFFAOYSA-N cystamine Chemical compound CCSSCCN OOTFVKOQINZBBF-UHFFFAOYSA-N 0.000 description 1
- 229940099500 cystamine Drugs 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
Claims (14)
- a)電磁放射を発生させるために設けられる複数の半導体チップ(4)を設けるステップと;
b)前記複数の半導体チップ(4)を平面状に配置するステップであって、前記半導体チップ(4)は、互いに横方向に離間する、ステップと;
c)パッケージ本体集合体(8)を形成するステップであって、前記パッケージ本体集合体(8)の少なくとも一部は、前記半導体チップ(4)の間に配置される、ステップと;
d)複数の変換要素(12)を形成するステップであって、各変換要素は波長変換材料を含み、前記半導体チップ(4)の1つに配置される、ステップと;
e)前記複数の変換要素(12)を、前記複数の変換要素(12)の少なくとも側縁部(20)において前記変換材料とは異なる封止材料からなる封止部(18)を設けて封止するステップと;
f)前記パッケージ本体集合体(8)を複数のオプトエレクトロニクス半導体装置(100)に個片化するステップであって、各半導体装置は、少なくとも1つの半導体チップ(4)、側方において封止された1つの変換要素(12)、およびパッケージ本体(82)としての前記パッケージ本体集合体(8)の一部を備える、ステップと、を備え、
ステップd)は、ステップb)の前、ステップc)の前、またはステップe)の前に実行され、
前記複数の変換要素(12)は、前記変換材料を含む変換箔(10)からの個片化によって形成され、
前記封止部(18)の少なくとも1つの側面(26)および前記パッケージ本体(82)の少なくとも1つの側面(24)は、互いに面一に終端している、
複数のオプトエレクトロニクス半導体装置(100)の製造方法。 - 前記変換材料は、波長変換量子ドットを含む、
請求項1に記載の製造方法。 - 前記変換箔(10)は、1つの変換要素(12)が各半導体チップ(4)の上に形成されるように前記パッケージ本体集合体(8)および前記半導体チップ(4)に固着され、次いでトレンチ(14)によって切断され、かつ、前記変換要素は、前記封止材料で少なくとも前記トレンチの領域において封止される、
請求項1に記載の製造方法。 - 前記変換要素(12)は、コーティングプロセスまたはキャスティングプロセスによって封止される、
請求項3に記載の製造方法。 - 最初に前記変換箔(10)は変換要素(12)に個片化され、前記変換要素(12)は前記半導体チップ(4)の上に形成され、次いで前記パッケージ本体集合体(8)は、前記複数の変換要素(12)を、前記複数の変換要素(12)の少なくとも側縁部において封止するように形成される、
請求項1に記載の製造方法。 - ステップb)において前記複数の半導体チップ(4)は、補助キャリア(2)に固着され、前記半導体チップ(4)は、互いに横方向において離間し、前記補助キャリア(2)は、ステップc)の後または1つの後続の方法ステップの後に除去される、
請求項1〜5のいずれか一項に記載の製造方法。 - ステップb)において前記複数の半導体チップ(4)は、構造化された金属複合物(32)に固着され、ステップf)の実行後、各半導体装置(100)は、前記構造化された金属複合物の少なくとも一部をリードフレーム(34,36)として備える、
請求項1〜5のいずれか一項に記載の製造方法。 - 前記変換要素(12)はさらに、前記変換要素(12)の前面において前記封止材料で封止され、前記封止材料は透明である、
請求項1〜7のいずれか一項に記載の製造方法。 - 前記パッケージ本体集合体(8)はステップc)において、圧縮成形法またはフィルム補助トランスファー成形法によって形成される、
請求項1〜8のいずれか一項に記載の製造方法。 - 前記半導体チップ(4)はステップc)において、オーバーモールドされ、次いで前記パッケージ本体集合体(8)は薄膜化され、その結果、前記半導体チップ(4)は所々で露出する、
請求項1〜9のいずれか一項に記載の製造方法。 - オプトエレクトロニクス半導体装置(100)であって、
− 前記半導体装置は、電磁放射を発生させるために設けられた半導体チップ(4)を備え;
− 前記半導体装置は、前記半導体チップ(4)を横方向において取り囲むパッケージ本体(82)を備え;
− 波長変換材料を含む変換要素(12)が前記半導体チップ(4)の上に配置されており、前記変換要素の少なくとも側縁部(20)に、前記変換材料とは異なる封止材料からなる封止部(18)が設けられており;
− 前記パッケージ本体(82)の側面(24)は、個片化の痕跡を示しており;
− 前記封止部(18)の少なくとも1つの側面(26)および前記パッケージ本体(82)の少なくとも1つの側面(24)は、互いに面一に終端している、
オプトエレクトロニクス半導体装置(100)。 - 前記半導体チップ(4)の接触のために後面に2つの接触子(52,54,34,36)を備える、
請求項11に記載のオプトエレクトロニクス半導体装置。 - リードフレーム(52,54)をさらに備え、前記2つの接触子は、前記半導体装置の前記後面に前記リードフレームの部分によって形成されており、前記リードフレームは、前記半導体装置の少なくとも1つの側面(38)の所々で露出している、
請求項11に記載のオプトエレクトロニクス半導体装置。 - 前記変換要素(12)は、前記変換材料を備える変換箔(10)の個片化された部分であり、
前記変換箔(10)は、前記パッケージ本体(82)の前記側面(24)を被覆することなく、前記半導体チップ(4)の電磁放射出射面、接触子(52,54,34,36)、および部分的に前記パッケージ本体(82)を上部において被覆する、
請求項12または13に記載のオプトエレクトロニクス半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014114372.8 | 2014-10-02 | ||
DE102014114372.8A DE102014114372B4 (de) | 2014-10-02 | 2014-10-02 | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
PCT/EP2015/072674 WO2016050903A1 (de) | 2014-10-02 | 2015-10-01 | Verfahren zur herstellung von optoelektronischen halbleiterbauelementen und optoelektronisches halbleiterbauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017531917A JP2017531917A (ja) | 2017-10-26 |
JP6377846B2 true JP6377846B2 (ja) | 2018-08-22 |
Family
ID=54207521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017516451A Active JP6377846B2 (ja) | 2014-10-02 | 2015-10-01 | オプトエレクトロニクス半導体装置の製造方法およびオプトエレクトロニクス半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10103296B2 (ja) |
JP (1) | JP6377846B2 (ja) |
CN (1) | CN106796968B (ja) |
DE (1) | DE102014114372B4 (ja) |
WO (1) | WO2016050903A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109844970B (zh) * | 2016-07-28 | 2023-04-04 | 亮锐有限责任公司 | 具有反射侧覆层的发光器件封装 |
US10193043B2 (en) | 2016-07-28 | 2019-01-29 | Lumileds Llc | Light emitting device package with reflective side coating |
DE102016122532A1 (de) * | 2016-11-22 | 2018-05-24 | Osram Opto Semiconductors Gmbh | Optoelektrisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
JP6798279B2 (ja) * | 2016-11-28 | 2020-12-09 | 豊田合成株式会社 | 発光装置の製造方法 |
US10756368B2 (en) * | 2016-12-27 | 2020-08-25 | Hyundai Motor Company | Fuel cell system and method of controlling the same |
DE102017103328A1 (de) * | 2017-02-17 | 2018-08-23 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen einer Konversionsvorrichtung mit einem Konversionselement und einer Streumaterialbeschichtung |
DE102017104871A1 (de) | 2017-03-08 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
US10854788B2 (en) | 2017-07-06 | 2020-12-01 | Osram Oled Gmbh | Method for producing an optoelectronic component and optoelectronic component |
DE102017117150A1 (de) * | 2017-07-28 | 2019-01-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
DE112017007820T5 (de) * | 2017-08-04 | 2020-04-16 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102018100946A1 (de) * | 2018-01-17 | 2019-07-18 | Osram Opto Semiconductors Gmbh | Bauteil und verfahren zur herstellung eines bauteils |
DE102018121338A1 (de) * | 2018-08-31 | 2020-03-05 | Osram Opto Semiconductors Gmbh | Optoelektronische leuchtvorrichtung, optoelektronische beleuchtungseinrichtung und herstellungsverfahren |
US10862008B2 (en) | 2018-11-20 | 2020-12-08 | Osram Opto Semiconductors Gmbh | Ceramic conversion element, light-emitting device and method for producing a ceramic conversion element |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1544923A3 (de) * | 2003-12-19 | 2007-03-14 | Osram Opto Semiconductors GmbH | Strahlungemittierendes Halbleiterbauelement und Verfahren zum Befestigen eines Halbleiterchips auf einem Leiterrahmen |
TWI241042B (en) * | 2004-03-11 | 2005-10-01 | Chen-Lun Hsingchen | A low thermal resistance LED device |
JP2006114909A (ja) * | 2004-10-14 | 2006-04-27 | Agilent Technol Inc | フラッシュ・モジュール |
DE102005061828B4 (de) * | 2005-06-23 | 2017-05-24 | Osram Opto Semiconductors Gmbh | Wellenlängenkonvertierendes Konvertermaterial, lichtabstrahlendes optisches Bauelement und Verfahren zu dessen Herstellung |
DE102007030129A1 (de) * | 2007-06-29 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement |
DE102007049005A1 (de) | 2007-09-11 | 2009-03-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
US8552444B2 (en) * | 2007-11-19 | 2013-10-08 | Panasonic Corporation | Semiconductor light-emitting device and manufacturing method of the same |
JP5252621B2 (ja) | 2007-12-28 | 2013-07-31 | 独立行政法人産業技術総合研究所 | 粘土を主成分とするフレキシブル蛍光フィルム |
EP2161763A1 (de) | 2008-09-04 | 2010-03-10 | Bayer MaterialScience AG | Konversionsfolie und ein Verfahren zu deren Herstellung |
DE102009036621B4 (de) | 2009-08-07 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
US20110049545A1 (en) | 2009-09-02 | 2011-03-03 | Koninklijke Philips Electronics N.V. | Led package with phosphor plate and reflective substrate |
JP2011066193A (ja) * | 2009-09-17 | 2011-03-31 | Rohm Co Ltd | 光学装置および光学装置の製造方法 |
JP2011253882A (ja) * | 2010-06-01 | 2011-12-15 | Toshiba Corp | 発光装置及びその製造方法 |
JP5659123B2 (ja) * | 2010-11-04 | 2015-01-28 | 富士フイルム株式会社 | 量子ドット構造体の形成方法 |
KR101761834B1 (ko) | 2011-01-28 | 2017-07-27 | 서울바이오시스 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
JP5670249B2 (ja) * | 2011-04-14 | 2015-02-18 | 日東電工株式会社 | 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置 |
WO2012144030A1 (ja) | 2011-04-20 | 2012-10-26 | 株式会社エルム | 発光装置及びその製造方法 |
JP6094062B2 (ja) | 2012-06-01 | 2017-03-15 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
DE102012216738A1 (de) | 2012-09-19 | 2014-03-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement |
DE102012111123A1 (de) | 2012-09-26 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement |
JP2014090157A (ja) * | 2012-10-03 | 2014-05-15 | Nitto Denko Corp | 封止シート被覆半導体素子、その製造方法、半導体装置およびその製造方法 |
JP5995695B2 (ja) * | 2012-12-03 | 2016-09-21 | シチズンホールディングス株式会社 | Led装置の製造方法 |
DE202013101431U1 (de) | 2013-04-04 | 2014-07-09 | Zumtobel Lighting Gmbh | Leuchtvorrichtung zur Erzeugung von Weißlicht |
-
2014
- 2014-10-02 DE DE102014114372.8A patent/DE102014114372B4/de active Active
-
2015
- 2015-10-01 JP JP2017516451A patent/JP6377846B2/ja active Active
- 2015-10-01 WO PCT/EP2015/072674 patent/WO2016050903A1/de active Application Filing
- 2015-10-01 CN CN201580054055.3A patent/CN106796968B/zh active Active
- 2015-10-01 US US15/515,766 patent/US10103296B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN106796968B (zh) | 2018-11-02 |
DE102014114372A1 (de) | 2016-04-07 |
CN106796968A (zh) | 2017-05-31 |
JP2017531917A (ja) | 2017-10-26 |
WO2016050903A1 (de) | 2016-04-07 |
US20170301835A1 (en) | 2017-10-19 |
US10103296B2 (en) | 2018-10-16 |
DE102014114372B4 (de) | 2022-05-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6377846B2 (ja) | オプトエレクトロニクス半導体装置の製造方法およびオプトエレクトロニクス半導体装置 | |
TWI553917B (zh) | 半導體發光裝置 | |
US10686104B2 (en) | Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device | |
US20160087182A1 (en) | Surface-Mountable Optoelectronic Component and Method for Producing a Surface-Mountable Optoelectronic Component | |
JP2017538166A (ja) | 変換要素、オプトエレクトロニクス半導体部品、および変換要素の製造方法 | |
JP6420372B2 (ja) | オプトエレクトロニクス半導体装置、オプトエレクトロニクス半導体装置の製造方法、およびオプトエレクトロニクス半導体装置を備えた光源 | |
US10242974B2 (en) | Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device | |
US10062813B2 (en) | Optoelectronic device and method for producing an optoelectronic device | |
JP6671393B2 (ja) | 光電子部品を作成する方法、および表面実装可能な光電子部品 | |
TW201308692A (zh) | 利用轉移成型製造光電半導體組件之方法 | |
JP2016532286A (ja) | オプトエレクトロニクス半導体エレメント及びオプトエレクトロニクス半導体エレメントの製造方法 | |
US20120286308A1 (en) | Led package structure and method of fabricating the same | |
KR101291092B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
JP2018509650A (ja) | 複数の変換素子、変換素子、およびオプトエレクトロニクス装置の製造方法 | |
JP4973279B2 (ja) | 発光装置及びその製造方法 | |
KR20140026163A (ko) | 반도체 소자 구조물을 제조하는 방법 | |
US20180261735A1 (en) | Radiation-Emitting Optoelectronic Semiconductor Component and Method for Producing the Same | |
KR101360324B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
US9312457B2 (en) | Light emitting device and method for manufacturing the same | |
KR101460742B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
KR101300463B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
KR101465708B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
KR101299563B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
KR20140026167A (ko) | 반도체 소자 구조물을 제조하는 방법 | |
KR20140048178A (ko) | 반도체 소자 구조물을 제조하는 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180223 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180306 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180601 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180703 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180725 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6377846 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |