JP6362248B2 - Ｍｉｓｈｆｅｔおよびショットキーデバイスの統合 - Google Patents

Ｍｉｓｈｆｅｔおよびショットキーデバイスの統合 Download PDF

Info

Publication number
JP6362248B2
JP6362248B2 JP2014034294A JP2014034294A JP6362248B2 JP 6362248 B2 JP6362248 B2 JP 6362248B2 JP 2014034294 A JP2014034294 A JP 2014034294A JP 2014034294 A JP2014034294 A JP 2014034294A JP 6362248 B2 JP6362248 B2 JP 6362248B2
Authority
JP
Japan
Prior art keywords
dielectric layer
gate
substrate
electrode
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014034294A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014165501A5 (enExample
JP2014165501A (ja
Inventor
エム．グリーン ブルース
エム．グリーン ブルース
エイ．テプリック ジェームズ
エイ．テプリック ジェームズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2014165501A publication Critical patent/JP2014165501A/ja
Publication of JP2014165501A5 publication Critical patent/JP2014165501A5/ja
Application granted granted Critical
Publication of JP6362248B2 publication Critical patent/JP6362248B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2014034294A 2013-02-26 2014-02-25 Ｍｉｓｈｆｅｔおよびショットキーデバイスの統合 Active JP6362248B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/777,858 US8946779B2 (en) 2013-02-26 2013-02-26 MISHFET and Schottky device integration
US13/777,858 2013-02-26

Publications (3)

Publication Number Publication Date
JP2014165501A JP2014165501A (ja) 2014-09-08
JP2014165501A5 JP2014165501A5 (enExample) 2017-03-23
JP6362248B2 true JP6362248B2 (ja) 2018-07-25

Family

ID=51369631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014034294A Active JP6362248B2 (ja) 2013-02-26 2014-02-25 Ｍｉｓｈｆｅｔおよびショットキーデバイスの統合

Country Status (3)

Country Link
US (2) US8946779B2 (enExample)
JP (1) JP6362248B2 (enExample)
CN (1) CN104009035B (enExample)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US9070758B2 (en) * 2011-06-20 2015-06-30 Imec CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof
US8941118B1 (en) * 2011-07-29 2015-01-27 Hrl Laboratories, Llc Normally-off III-nitride transistors with high threshold-voltage and low on-resistance
US9679981B2 (en) * 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9847411B2 (en) * 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9755059B2 (en) * 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9407214B2 (en) * 2013-06-28 2016-08-02 Cree, Inc. MMIC power amplifier
JP6381639B2 (ja) * 2013-07-08 2018-08-29 エフィシエント パワー コンヴァーション コーポレーション 窒化ガリウムデバイスにおける分離構造及び集積回路
JP6197427B2 (ja) * 2013-07-17 2017-09-20 豊田合成株式会社 ショットキーバリアダイオード
TWI548087B (zh) 2014-06-06 2016-09-01 台達電子工業股份有限公司 半導體裝置與其之製造方法
US20150372096A1 (en) * 2014-06-20 2015-12-24 Ishiang Shih High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
CN104201201B (zh) * 2014-09-16 2017-03-15 电子科技大学 一种用于GaN基HEMT器件的自适应偏置场板
FR3031239B1 (fr) * 2014-12-30 2023-04-28 Thales Sa Passivation multicouche de la face superieure de l'empilement de materiaux semi-conducteurs d'un transistor a effet de champ.
TWI572034B (zh) * 2015-03-26 2017-02-21 wen-zhang Jiang III / nitride semiconductor device and method for producing the same
US10756084B2 (en) 2015-03-26 2020-08-25 Wen-Jang Jiang Group-III nitride semiconductor device and method for fabricating the same
US11335799B2 (en) 2015-03-26 2022-05-17 Chih-Shu Huang Group-III nitride semiconductor device and method for fabricating the same
US9490430B1 (en) * 2015-06-26 2016-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistors and methods of forming same
JP6433390B2 (ja) * 2015-08-06 2018-12-05 三菱電機株式会社 半導体装置
US20170069721A1 (en) * 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
KR102415409B1 (ko) * 2015-09-09 2022-07-04 에스케이하이닉스 주식회사 이피롬 셀 및 그 제조방법과, 이피롬 셀 어레이
US9647075B2 (en) * 2015-09-16 2017-05-09 Nxp Usa, Inc. Segmented field plate structure
US10243057B2 (en) 2015-10-23 2019-03-26 The Board Of Trustees Of The University Of Illinois MISHFET having a comparatively high and selectable or customizable breakdown voltage
WO2017095400A1 (en) * 2015-12-02 2017-06-08 Intel Corporation Techniques for co-integrating transition metal dichalcogenide (tmdc)-based and iii-n semiconductor-based transistor devices
EP3179515A1 (en) * 2015-12-10 2017-06-14 Nexperia B.V. Semiconductor device and method of making a semiconductor device
WO2017099797A1 (en) * 2015-12-11 2017-06-15 Intel Corporation Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same
JP6415466B2 (ja) * 2016-02-17 2018-10-31 三菱電機株式会社 半導体装置
US9941398B2 (en) * 2016-03-17 2018-04-10 Taiwan Semiconductor Manufacturing Company Ltd. High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer
DE102016205079B4 (de) * 2016-03-29 2021-07-01 Robert Bosch Gmbh High-electron-mobility Transistor
WO2017201395A1 (en) * 2016-05-20 2017-11-23 Synopsys, Inc. Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regions
TWI648858B (zh) 2016-06-14 2019-01-21 黃知澍 Ga-face III族/氮化物磊晶結構及其主動元件與其製作方法
CN107768248A (zh) * 2016-08-19 2018-03-06 中国科学院苏州纳米技术与纳米仿生研究所 GaN基增强型HEMT器件的制备方法
CN109804456B (zh) * 2016-08-23 2022-12-23 克罗米斯有限公司 集成有工程化衬底的电子功率器件
JP6724685B2 (ja) * 2016-09-23 2020-07-15 住友電気工業株式会社 半導体装置
CN108122790B (zh) * 2016-11-29 2020-12-18 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
CN106653837B (zh) * 2016-12-02 2019-09-13 电子科技大学 一种氮化镓双向开关器件
US11114543B2 (en) * 2017-01-24 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Group III-V device structure
GB201709006D0 (en) * 2017-06-06 2017-07-19 Univ Court Univ Of Glasgow Method of fabricating a monolithic sensor device from a layered structure
TWI660465B (zh) * 2017-07-28 2019-05-21 新唐科技股份有限公司 半導體元件及其製造方法
US10777638B1 (en) 2018-01-04 2020-09-15 Synopsys, Inc. Constricted junctionless FinFET/nanowire/nanosheet device having cascode portion
US10950598B2 (en) * 2018-01-19 2021-03-16 Macom Technology Solutions Holdings, Inc. Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor
US11469300B2 (en) 2018-04-22 2022-10-11 Epinovatech Ab Reinforced thin-film semiconductor device and methods of making same
JP6981601B2 (ja) * 2018-05-29 2021-12-15 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US11342232B2 (en) * 2018-06-22 2022-05-24 Intel Corporation Fabrication of Schottky barrier diode using lateral epitaxial overgrowth
US10749019B2 (en) * 2018-07-03 2020-08-18 Semiconductor Components Industries, Llc Circuit and electronic device including an enhancement-mode transistor
CN109599345B (zh) * 2018-10-31 2020-03-20 厦门市三安集成电路有限公司 一种异质结双极型晶体管金属连线不易断裂的方法
WO2020110285A1 (ja) * 2018-11-30 2020-06-04 三菱電機株式会社 半導体装置
US11757027B2 (en) * 2018-12-13 2023-09-12 Intel Corporation E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown
US10886392B2 (en) * 2018-12-20 2021-01-05 Win Semiconductors Corp. Semiconductor structure for improving thermal stability and Schottky behavior
US10818786B1 (en) * 2019-05-07 2020-10-27 Cambridge Gan Devices Limited III-V semiconductor device with integrated protection functions
FR3096172A1 (fr) 2019-05-13 2020-11-20 X-Fab France SAS Transfer Printing for RF Applications
US20200395358A1 (en) * 2019-06-17 2020-12-17 Intel Corporation Co-integration of extended-drain and self-aligned iii-n transistors on a single die
US11417762B2 (en) * 2019-06-26 2022-08-16 Skyworks Solutions, Inc. Switch with integrated Schottky barrier contact
CN110289310A (zh) * 2019-06-29 2019-09-27 厦门市三安集成电路有限公司 晶体管、栅极结构及其制备方法
KR102721080B1 (ko) * 2019-10-08 2024-10-24 삼성전자주식회사 반도체 장치, 그 제조 방법 및 이를 포함하는 디스플레이 장치
CN112652659B (zh) * 2019-10-09 2024-02-13 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
US11569182B2 (en) 2019-10-22 2023-01-31 Analog Devices, Inc. Aluminum-based gallium nitride integrated circuits
EP3813240A1 (en) * 2019-10-25 2021-04-28 Epinovatech AB Ac-dc converter circuit
TWI775027B (zh) * 2019-12-20 2022-08-21 世界先進積體電路股份有限公司 半導體結構
DE102019009096B4 (de) 2019-12-30 2025-03-27 Namlab Ggmbh Halbleiterbauelementstruktur mit mehreren Gate-Anschlüssen und Verfahren zu deren Bildung
EP4521491A3 (en) 2020-01-24 2025-03-26 Epinovatech AB Solid-state battery layer structure and method for producing the same
EP3866189B1 (en) 2020-02-14 2022-09-28 Epinovatech AB A mmic front-end module
EP3879706A1 (en) 2020-03-13 2021-09-15 Epinovatech AB Field-programmable gate array device
US11152364B1 (en) * 2020-04-21 2021-10-19 Vanguard International Semiconductor Corporation Semiconductor structure and methods for manufacturing the same
EP3907877A1 (en) 2020-05-07 2021-11-10 Epinovatech AB Induction machine
JP2021190501A (ja) * 2020-05-27 2021-12-13 ローム株式会社 窒化物半導体装置
CN112038336B (zh) * 2020-06-15 2023-03-24 湖南三安半导体有限责任公司 氮化物器件及其esd防护结构和制作方法
WO2022052001A1 (zh) * 2020-09-10 2022-03-17 苏州晶湛半导体有限公司 增强型半导体结构及其制作方法
US11923424B2 (en) * 2020-12-31 2024-03-05 Nxp B.V. Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor
JP7585794B2 (ja) * 2021-01-07 2024-11-19 三菱電機株式会社 半導体装置
US20220376060A1 (en) * 2021-05-20 2022-11-24 Nxp Usa, Inc. Semiconductor device with conductive element formed over dielectric layers and method of fabrication therefor
US12362294B2 (en) * 2021-06-03 2025-07-15 Nxp Usa, Inc. Wafer with semiconductor devices and integrated electrostatic discharge protection
US12342560B2 (en) 2021-12-20 2025-06-24 Nxp Usa, Inc. Transistors with source-connected field plates
US12148820B2 (en) 2021-12-20 2024-11-19 Nxp B.V. Transistors with source-connected field plates
US12349433B2 (en) 2021-12-20 2025-07-01 Nxp Usa, Inc. Transistors with self-aligned source-connected field plates
CN116344576B (zh) * 2021-12-22 2025-10-31 世界先进积体电路股份有限公司 半导体装置
CN117238855A (zh) * 2022-06-07 2023-12-15 华为技术有限公司 半导体器件及其制备方法
US12206031B2 (en) * 2022-06-09 2025-01-21 Macom Technology Solutions Holdings, Inc. Monolithic pin and Schottky diode integrated circuits
US20240243197A1 (en) * 2023-01-13 2024-07-18 Qorvo Us, Inc. Dual-gate semiconductor structures for power applications
CN117116940A (zh) * 2023-10-25 2023-11-24 青岛嘉展力芯半导体有限责任公司 共源共栅结构及电子装置
US20250240997A1 (en) 2024-01-22 2025-07-24 Stmicroelectronics International N.V. Improved hemt device, in particular depletion mode device, and manufacturing process thereof
WO2025204860A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 半導体装置、電気回路および電子機器
CN118039690B (zh) * 2024-04-11 2024-07-23 安徽大学 半导体结构、制备方法和栅极异质结上分压标定测算方法
TWI897812B (zh) * 2025-02-14 2025-09-11 宏汭精測科技股份有限公司 氮化鎵功率半導體裝置

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8001135A (nl) * 1980-02-26 1981-09-16 Philips Nv Lijnonderbrekingsinrichting.
US5286985A (en) * 1988-11-04 1994-02-15 Texas Instruments Incorporated Interface circuit operable to perform level shifting between a first type of device and a second type of device
US6529034B1 (en) 2001-11-07 2003-03-04 International Rectifier Corporation Integrated series schottky and FET to allow negative drain voltage
US7898047B2 (en) * 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US7341978B2 (en) 2005-03-04 2008-03-11 Lsi Logic Corporation Superconductor wires for back end interconnects
US7420226B2 (en) * 2005-06-17 2008-09-02 Northrop Grumman Corporation Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates
US20070018199A1 (en) * 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
US7972915B2 (en) 2005-11-29 2011-07-05 The Hong Kong University Of Science And Technology Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
US8193591B2 (en) 2006-04-13 2012-06-05 Freescale Semiconductor, Inc. Transistor and method with dual layer passivation
JP2009027008A (ja) * 2007-07-20 2009-02-05 Panasonic Corp 半導体装置およびその製造方法
JP4514063B2 (ja) * 2007-08-30 2010-07-28 古河電気工業株式会社 Ｅｄ型インバータ回路および集積回路素子
US7935620B2 (en) 2007-12-05 2011-05-03 Freescale Semiconductor, Inc. Method for forming semiconductor devices with low leakage Schottky contacts
US8110874B2 (en) * 2008-03-15 2012-02-07 Kabushiki Kaisha Toshiba Hybrid substrates and method of manufacture
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US9711633B2 (en) 2008-05-09 2017-07-18 Cree, Inc. Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
JP5237763B2 (ja) 2008-11-10 2013-07-17 スタンレー電気株式会社 半導体素子の製造方法
WO2010151857A2 (en) 2009-06-26 2010-12-29 Cornell University Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation
US8564020B2 (en) * 2009-07-27 2013-10-22 The Hong Kong University Of Science And Technology Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same
US8390000B2 (en) * 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8338860B2 (en) * 2009-10-30 2012-12-25 Alpha And Omega Semiconductor Incorporated Normally off gallium nitride field effect transistors (FET)
JP2012028705A (ja) * 2010-07-27 2012-02-09 Sumitomo Electric Ind Ltd 半導体装置
US8389348B2 (en) * 2010-09-14 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
JP5724347B2 (ja) * 2010-12-10 2015-05-27 富士通株式会社 化合物半導体装置及びその製造方法
JP5768397B2 (ja) * 2011-02-16 2015-08-26 三菱電機株式会社 半導体装置の製造方法
US9859882B2 (en) * 2011-03-21 2018-01-02 Infineon Technologies Americas Corp. High voltage composite semiconductor device with protection for a low voltage device
KR20120120829A (ko) * 2011-04-25 2012-11-02 삼성전기주식회사 질화물 반도체 소자 및 그 제조방법
US9070758B2 (en) 2011-06-20 2015-06-30 Imec CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof
KR20130004707A (ko) * 2011-07-04 2013-01-14 삼성전기주식회사 질화물 반도체 소자, 질화물 반도체 소자의 제조방법 및 질화물 반도체 파워소자
JP2013041986A (ja) * 2011-08-16 2013-02-28 Advanced Power Device Research Association ＧａＮ系半導体装置
US20130087803A1 (en) * 2011-10-06 2013-04-11 Epowersoft, Inc. Monolithically integrated hemt and schottky diode
US8841703B2 (en) * 2011-10-31 2014-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor and method of forming the same
US20130146943A1 (en) * 2011-12-12 2013-06-13 John P. EDWARDS In situ grown gate dielectric and field plate dielectric
US9379191B2 (en) * 2011-12-28 2016-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor including an isolation region
US20140077266A1 (en) * 2012-09-14 2014-03-20 Power Integrations, Inc. Heterostructure Transistor with Multiple Gate Dielectric Layers

Also Published As

Publication number Publication date
US10249615B2 (en) 2019-04-02
US8946779B2 (en) 2015-02-03
US20140239346A1 (en) 2014-08-28
US20150123168A1 (en) 2015-05-07
CN104009035B (zh) 2018-05-29
JP2014165501A (ja) 2014-09-08
CN104009035A (zh) 2014-08-27

Similar Documents

Publication Publication Date Title
JP6362248B2 (ja) Ｍｉｓｈｆｅｔおよびショットキーデバイスの統合
US10014402B1 (en) High electron mobility transistor (HEMT) device structure
US11757005B2 (en) HEMT-compatible lateral rectifier structure
JP5805608B2 (ja) 支持されたゲート電極を備えるトランジスタの作製方法およびそれに関連するデバイス
US9281204B2 (en) Method for improving E-beam lithography gate metal profile for enhanced field control
JP5866766B2 (ja) 化合物半導体装置及びその製造方法
CN108807527A (zh) 具有栅极堆叠中的隧道二极管的iiia族氮化物hemt
US12218128B2 (en) Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
KR101078143B1 (ko) 복합 패시베이션 유전막을 갖는 이종접합 전계효과 트랜지스터 및 그 제조방법
US20240047451A1 (en) Nitride-based semiconductor ic chip and method for manufacturing the same
US20150034958A1 (en) Hemt-compatible lateral rectifier structure
JP7100241B2 (ja) 化合物半導体装置及びその製造方法
US12336233B2 (en) GaN-based semiconductor device with reduced leakage current and method for manufacturing the same
CN114402442B (zh) 氮化物基半导体装置及其制造方法
US20250176253A1 (en) Group iii-v ic with different sheet resistance 2-deg resistors
WO2023019436A1 (en) Semiconductor device and method for manufacturing the same
US12125847B2 (en) Nitride-based semiconductor device and method for manufacturing the same
US12446287B2 (en) Semiconductor device and method for manufacturing the same
WO2024016216A1 (en) Nitride-based semiconductor device and method for manufacturing the same
CN118302866A (zh) 半导体器件及其制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170216

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170216

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171212

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20171214

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180309

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180511

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180529

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180625

R150 Certificate of patent or registration of utility model

Ref document number: 6362248

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250